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庫存類別供應商排名	庫存所在位置	型號 / 製造商 / 其他	庫存量	生產年份/批號	最低訂貨數量 / 後續訂購數量	預定出貨日	資訊核友管理編號	Manufacturer	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Operating Temperature Range	Applications	Automotive	Mounting Type	Device Package
質量保證 B-1	來自供應商的訂	IRL3705ZPBF INFINEON	3			預計 11個工作天	核友型號：st75141643	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	4.5V, 10V	75A(Tc)	2880 pF @ 25 V	130W (Tc)	8mOhms @ 52A, 10V	3V @ 250µA	60 nC @ 5 V	±16V	-55°C ~ 175°C (TJ)			Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRL3705ZSTRLPBF INFINEON	20			預計 11個工作天	核友型號：st75141644	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	4.5V, 10V	75A(Tc)	2880 pF @ 25 V	130W (Tc)	8mOhms @ 52A, 10V	3V @ 250µA	60 nC @ 5 V	±16V	-55°C ~ 175°C (TJ)			Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂	IRL3713PBF INFINEON	2			預計 11個工作天	核友型號：st75141645	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	30V	4.5V, 10V	260A(Tc)	5890 pF @ 15 V	330W(Tc)	3mOhms @ 38A, 10V	2.5V @ 250µA	110 nC @ 4.5 V	±20V	-55°C ~ 175°C (TJ)			Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRL3803STRLPBF INFINEON	2			預計 11個工作天	核友型號：st75141646	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	30V	4.5V, 10V	140A(Tc)	5000 pF @ 25 V	3.8W(Ta), 200W(Tc)	6mOhms @ 71A, 10V	1V @ 250µA	140 nC @ 4.5 V	±16V	-55°C ~ 175°C (TJ)			Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂	IRL3803STRRPBF INFINEON	10			預計 11個工作天	核友型號：st75141647	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	30V	4.5V, 10V	140A(Tc)	5000 pF @ 25 V	3.8W(Ta), 200W(Tc)	6mOhms @ 71A, 10V	1V @ 250µA	140 nC @ 4.5 V	±16V	-55°C ~ 175°C (TJ)			Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂	IRL40B209 INFINEON	10			預計 11個工作天	核友型號：st75141648	Infineon Technologies	HEXFET®, StrongIRFET™	N-Channel	MOSFET (Metal Oxide)	40V	4.5V, 10V	195A(Tc)	15140 pF @ 25 V	375W(Tc)	1.25mOhm @ 100A, 10V	2.4V @ 250µA	270 nC @ 4.5 V	±20V	-55°C ~ 175°C (TJ)			Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRL40B212 INFINEON	5			預計 11個工作天	核友型號：st75141649	Infineon Technologies	HEXFET®, StrongIRFET™	N-Channel	MOSFET (Metal Oxide)	40V	4.5V, 10V	195A(Tc)	8320 pF @ 25 V	-55°C ~ 150°C (TJ)	1.9mOhms @ 100A, 10V	2.4V @ 150µA	137 nC @ 4.5 V	±20V	-55°C ~ 175°C (TJ)			Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRL40B215 INFINEON	10			預計 11個工作天	核友型號：st75141650	Infineon Technologies	HEXFET®, StrongIRFET™	N-Channel	MOSFET (Metal Oxide)	40V	4.5V, 10V	120A (Tc)	5225 pF @ 25 V	143W(Tc)	2.7mOhms @ 98A, 10V	2.4V @ 100µA	84 nC @ 4.5 V	±20V	-55°C ~ 175°C (TJ)			Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRL40SC209 INFINEON	5			預計 11個工作天	核友型號：st75141651	Infineon Technologies	StrongIRFET™	N-Channel	MOSFET (Metal Oxide)	40V	4.5V, 10V	478A(Tc)	15270 pF @ 25 V	375W(Tc)	0.8mOhms @ 100A, 10V	2.4V @ 250µA	267 nC @ 4.5 V	±20V	-55°C ~ 175°C (TJ)			Surface Mount	D2PAK-7
質量保證 B-2	來自供應商的訂	IRL40SC209 INFINEON	20,394	22/23+	MOQ : 100 SPQ : 1	預計 11個工作天	核友型號：st76540282	Infineon Technologies	StrongIRFET™	N-Channel	MOSFET (Metal Oxide)	40V	4.5V, 10V	478A(Tc)	15270 pF @ 25 V	375W(Tc)	0.8mOhms @ 100A, 10V	2.4V @ 250µA	267 nC @ 4.5 V	±20V	-55°C ~ 175°C (TJ)			Surface Mount	D2PAK-7
質量保證 B-1	來自供應商的訂	IRL40SC228 INFINEON	7			預計 11個工作天	核友型號：st75141652	Infineon Technologies	StrongIRFET™	N-Channel	MOSFET (Metal Oxide)	40V	4.5V, 10V	360A	19680 pF @ 25 V	416W(Tc)	0.65 mOhms @ 10V	1.7V	307 nC @ 4.5 V	2.4V	-55°C ~ 175°C			Surface Mount	D2PAK 7pin (TO-263 7pin)
質量保證 B-2	來自供應商的訂	IRL40SC228 INFINEON TECHNOLOGIES	4,000	N/A	MOQ : 122 SPQ : 1	預計 16個工作天	核友型號：st76681772	Infineon Technologies	StrongIRFET™	N-Channel	MOSFET (Metal Oxide)	40V	4.5V, 10V	360A	19680 pF @ 25 V	416W(Tc)	0.65 mOhms @ 10V	1.7V	307 nC @ 4.5 V	2.4V	-55°C ~ 175°C			Surface Mount	D2PAK 7pin (TO-263 7pin)
質量保證 B-1	來自供應商的訂	IRL520NSTRLPBF INFINEON	1,910			預計 11個工作天	核友型號：st75141654	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	4V, 10V	10A (Tc)	440 pF @ 25 V	3.8W(Ta), 48W(Tc)	180mOhms @ 6A, 10V	2V @ 250µA	20 nC @ 5 V	±16V	-55°C ~ 175°C (TJ)			Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂	IRL530NPBF INFINEON	4			預計 11個工作天	核友型號：st75141655	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	4V, 10V	17A (Tc)	800 pF @ 25 V	79W (Tc)	100mOhms @ 9A, 10V	2V @ 250µA	34 nC @ 5 V	±16V	-55°C ~ 175°C (TJ)			Through Hole	TO-220AB
質量保證 B-2	來自供應商的訂	IRL530NSTRLPBF INFINEON	4,167	22/23+	MOQ : 500 SPQ : 1	預計 11個工作天	核友型號：st76496665	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	4V, 10V	17A (Tc)	800 pF @ 25 V	3.8W(Ta), 79W(Tc)	100mOhms @ 9A, 10V	2V @ 250µA	34 nC @ 5 V	±20V	-55°C ~ 175°C (TJ)			Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂	IRL540NPBF INFINEON	7			預計 11個工作天	核友型號：st75141656	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	4V, 10V	36A (Tc)	1800 pF @ 25 V	140W (Tc)	44mOhms @ 18A, 10V	2V @ 250µA	74 nC @ 5 V	±16V	-55°C ~ 175°C (TJ)			Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂海外位置	IRL540NPBF INFINEON	2,650	24+		預計 16個工作天	核友型號：st49404758	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	4V, 10V	36A (Tc)	1800 pF @ 25 V	140W (Tc)	44mOhms @ 18A, 10V	2V @ 250µA	74 nC @ 5 V	±16V	-55°C ~ 175°C (TJ)			Through Hole	TO-220AB
質量保證 B-2	來自供應商的訂	IRL540NPBF INFINEON TECHNOLOGIES	28,000	N/A	MOQ : 1,000 SPQ : 1,000	預計 16個工作天	核友型號：st76681773	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	4V, 10V	36A (Tc)	1800 pF @ 25 V	140W (Tc)	44mOhms @ 18A, 10V	2V @ 250µA	74 nC @ 5 V	±16V	-55°C ~ 175°C (TJ)			Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRL540NSTRLPBF INFINEON	2			預計 11個工作天	核友型號：st75141657	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	4V, 10V	36A (Tc)	1800 pF @ 25 V	3.8W(Ta), 140W(Tc)	44mOhms @ 18A, 10V	2V @ 250µA	74 nC @ 5 V	±16V	-55°C ~ 175°C (TJ)			Surface Mount	D2PAK
質量保證 B-2	來自供應商的訂	IRL540NSTRLPBF INFINEON TECHNOLOGIES	30,400	N/A	MOQ : 800 SPQ : 800	預計 16個工作天	核友型號：st76681774	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	4V, 10V	36A (Tc)	1800 pF @ 25 V	3.8W(Ta), 140W(Tc)	44mOhms @ 18A, 10V	2V @ 250µA	74 nC @ 5 V	±16V	-55°C ~ 175°C (TJ)			Surface Mount	D2PAK
質量保證 B-2	來自供應商的訂	IRL60HS118 INFINEON	27,236	21+	MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st76369199	Infineon Technologies	OptiMOS™ 5	N-Channel	MOSFET (Metal Oxide)	60V	4.5V, 10V	18.5A (Tc)	660 pF @ 25 V	11.5W (Tc)	17mOhm @ 11A, 10V	2.3V @ 10µA	8 nC @ 4.5 V	±20V	-55°C ~ 175°C (TJ)	Standard		Surface Mount	6-PQFN (2x2) (DFN2020)
質量保證 B-1	來自供應商的訂	IRL60SL216 INFINEON	5			預計 11個工作天	核友型號：st75141658	Infineon Technologies	HEXFET®, StrongIRFET™	N-Channel	MOSFET (Metal Oxide)	60V	4.5V, 10V	195A(Tc)	15330 pF @ 25 V	375W(Tc)	1.95 mOhms @ 100A, 10V	2.4V @ 250µA	255 nC @ 4.5 V	±20V	-55°C ~ 175°C (TJ)			Through Hole	TO-262-3
質量保證 B-1	來自供應商的訂	IRL6297SDTRPBF INFINEON	20			預計 11個工作天	核友型號：st75141659	Infineon Technologies	HEXFET®	20V	15A	2245pF @ 10V	1.7W	4.9リOhms @ 15A, 4.5V	1.1V @ 35µA	54nC @ 10V	MOSFET (Metal Oxide)	2 N-Channel (Dual)	Logic Level Gate	-40°C ~ 150°C (TJ)			Surface Mount	DIRECTFET? SA
質量保證 B-1	來自供應商的訂	IRL6297SDTRPBF INFINEON	48,000	17+		預計 11個工作天	核友型號：st71361840	Infineon Technologies	HEXFET®	20V	15A	2245pF @ 10V	1.7W	4.9リOhms @ 15A, 4.5V	1.1V @ 35µA	54nC @ 10V	MOSFET (Metal Oxide)	2 N-Channel (Dual)	Logic Level Gate	-40°C ~ 150°C (TJ)			Surface Mount	DIRECTFET? SA
質量保證 B-1	來自供應商的訂	IRL7486MTRPBF INFINEON	27			預計 11個工作天	核友型號：st75141660	Infineon Technologies	HEXFET®, StrongIRFET™	N-Channel	MOSFET (Metal Oxide)	40V	4.5V, 10V	209A(Tc)	6904 pF @ 25 V	104W (Tc)	1.25mOhms @ 123A, 10V	2.5V @ 150µA	111 nC @ 4.5 V	±20V	-55°C ~ 150°C (TJ)			Surface Mount	DirectFET™ Isometric ME
質量保證 B-1	來自供應商的訂	IRL7486MTRPBF INFINEON	20,000	21+		預計 11個工作天	核友型號：st71361841	Infineon Technologies	HEXFET®, StrongIRFET™	N-Channel	MOSFET (Metal Oxide)	40V	4.5V, 10V	209A(Tc)	6904 pF @ 25 V	104W (Tc)	1.25mOhms @ 123A, 10V	2.5V @ 150µA	111 nC @ 4.5 V	±20V	-55°C ~ 150°C (TJ)			Surface Mount	DirectFET™ Isometric ME
質量保證	來自供應商的訂	IRL7486MTRPBF INFINEON	4,800	25+		預計 16個工作天	核友型號：st60359142	Infineon Technologies	HEXFET®, StrongIRFET™	N-Channel	MOSFET (Metal Oxide)	40V	4.5V, 10V	209A(Tc)	6904 pF @ 25 V	104W (Tc)	1.25mOhms @ 123A, 10V	2.5V @ 150µA	111 nC @ 4.5 V	±20V	-55°C ~ 150°C (TJ)			Surface Mount	DirectFET™ Isometric ME
質量保證 B-1	來自供應商的訂	IRL7833PBF INFINEON	9			預計 11個工作天	核友型號：st75141661	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	30V	4.5V, 10V	150A(Tc)	4170 pF @ 15 V	140W (Tc)	3.8mOhms @ 38A, 10V	2.3V @ 250µA	47 nC @ 4.5 V	±20V	-55°C ~ 175°C (TJ)			Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRL7833STRLPBF INFINEON	20			預計 11個工作天	核友型號：st75141662	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	30V	4.5V, 10V	150A(Tc)	4170 pF @ 15 V	140W (Tc)	3.8mOhms @ 38A, 10V	2.3V @ 250µA	47 nC @ 4.5 V	±20V	-55°C ~ 175°C (TJ)			Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂	IRL7833STRLPBF INFINEON	250	2250		預計 7個工作天	核友型號：st76917634	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	30V	4.5V, 10V	150A(Tc)	4170 pF @ 15 V	140W (Tc)	3.8mOhms @ 38A, 10V	2.3V @ 250µA	47 nC @ 4.5 V	±20V	-55°C ~ 175°C (TJ)			Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂	IRL80HS120 INFINEON	3			預計 11個工作天	核友型號：st75141663	Infineon Technologies	OptiMOS™ 5	N-Channel	MOSFET (Metal Oxide)	80V	4.5V, 10V	12.5A	540 pF @ 25 V	11.5W (Tc)	32 mOhms @ 10V	1.7V	7 nC @ 4.5 V	2V	-55°C ~ 175°C	Standard		Surface Mount	PQFN 2 x 2 (DFN2020)
質量保證 B-2	來自供應商的訂	IRL80HS120 INFINEON	6,335	22/23+	MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st76459012	Infineon Technologies	OptiMOS™ 5	N-Channel	MOSFET (Metal Oxide)	80V	4.5V, 10V	12.5A	540 pF @ 25 V	11.5W (Tc)	32 mOhms @ 10V	1.7V	7 nC @ 4.5 V	2V	-55°C ~ 175°C	Standard		Surface Mount	PQFN 2 x 2 (DFN2020)
質量保證 B-1	來自供應商的訂	IRLB3034PBF INFINEON	917			預計 11個工作天	核友型號：st75141664	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	40V	4.5V, 10V	195A(Tc)	10315 pF @ 25 V	375W(Tc)	1.7mOhms @ 195A, 10V	2.5V @ 250µA	162 nC @ 4.5 V	±20V	-55°C ~ 175°C (TJ)			Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRLB3036PBF INFINEON	10			預計 11個工作天	核友型號：st75141665	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	60V	4.5V, 10V	195A(Tc)	11210 pF @ 50 V	380W(Tc)	2.4mOhms @ 165A, 10V	2.5V @ 250µA	140 nC @ 4.5 V	±16V	-55°C ~ 175°C (TJ)			Through Hole	TO-220AB
質量保證 B-2	來自供應商的訂	IRLB3036PBF INFINEON	1,700	18+	MOQ : 500 SPQ : 1	預計 11個工作天	核友型號：st76480031	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	60V	4.5V, 10V	195A(Tc)	11210 pF @ 50 V	380W(Tc)	2.4mOhms @ 165A, 10V	2.5V @ 250µA	140 nC @ 4.5 V	±16V	-55°C ~ 175°C (TJ)			Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRLB3813PBF INFINEON	10			預計 11個工作天	核友型號：st75141666	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	30V	4.5V, 10V	260A(Tc)	8420 pF @ 15 V	230W(Tc)	1.95mOhms @ 60A, 10V	2.35V @ 150µA	86 nC @ 4.5 V	±20V	-55°C ~ 175°C (TJ)			Through Hole	TO-220AB
質量保證 B-2	來自供應商的訂	IRLB3813PBF INFINEON	1,885	22+	MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st76426131	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	30V	4.5V, 10V	260A(Tc)	8420 pF @ 15 V	230W(Tc)	1.95mOhms @ 60A, 10V	2.35V @ 150µA	86 nC @ 4.5 V	±20V	-55°C ~ 175°C (TJ)			Through Hole	TO-220AB
質量保證 B-2	來自供應商的訂	IRLB4030PBF INFINEON	1,000	22/23+	MOQ : 500 SPQ : 1	預計 11個工作天	核友型號：st76497489	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	4.5V, 10V	180A (Tc)	11360 pF @ 50 V	-55°C ~ 150°C (TJ)	4.3mOhms @ 110A, 10V	2.5V @ 250µA	130 nC @ 4.5 V	±16V	-55°C ~ 175°C (TJ)			Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRLB4132PBF INFINEON	10			預計 11個工作天	核友型號：st75141667	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	30V	4.5V, 10V	78A(Tc)	5110 pF @ 15 V	140W (Tc)	3.5mOhms @ 40A, 10V	2.35V @ 100µA	54 nC @ 4.5 V	±20V	-55°C ~ 175°C (TJ)			Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRLB4132PBF INFINEON	1,700	17+		預計 11個工作天	核友型號：st71361842	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	30V	4.5V, 10V	78A(Tc)	5110 pF @ 15 V	140W (Tc)	3.5mOhms @ 40A, 10V	2.35V @ 100µA	54 nC @ 4.5 V	±20V	-55°C ~ 175°C (TJ)			Through Hole	TO-220AB
質量保證 B-2	來自供應商的訂	IRLB4132PBF INFINEON	1,606	22/23+	MOQ : 500 SPQ : 1	預計 11個工作天	核友型號：st76488037	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	30V	4.5V, 10V	78A(Tc)	5110 pF @ 15 V	140W (Tc)	3.5mOhms @ 40A, 10V	2.35V @ 100µA	54 nC @ 4.5 V	±20V	-55°C ~ 175°C (TJ)			Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRLB4132PBF INFINEON	36,450	2215+		預計 4個工作天	核友型號：st74840082	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	30V	4.5V, 10V	78A(Tc)	5110 pF @ 15 V	140W (Tc)	3.5mOhms @ 40A, 10V	2.35V @ 100µA	54 nC @ 4.5 V	±20V	-55°C ~ 175°C (TJ)			Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂海外位置	IRLB4132PBF INFINEON	38,210	2215+		預計 16個工作天	核友型號：st49404769	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	30V	4.5V, 10V	78A(Tc)	5110 pF @ 15 V	140W (Tc)	3.5mOhms @ 40A, 10V	2.35V @ 100µA	54 nC @ 4.5 V	±20V	-55°C ~ 175°C (TJ)			Through Hole	TO-220AB
質量保證 B-2	來自供應商的訂	IRLB8314PBF INFINEON	4,892	22/23+	MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st76416253	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	30V	4.5V, 10V	171A(Tc)	5050 pF @ 15 V	125W (Tc)	2.4mOhms @ 68A, 10V	2.2V @ 100µA	60 nC @ 4.5 V	±20V	-55°C ~ 175°C (TJ)			Through Hole	TO-220-3
質量保證 B-2	來自供應商的訂	IRLB8743PBF INFINEON	7,829	22/23+	MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st76455558	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	30V	4.5V, 10V	78A(Tc)	5110 pF @ 15 V	140W (Tc)	3.2mOhms @ 40A, 10V	2.35V @ 100µA	54 nC @ 4.5 V	±20V	-55°C ~ 175°C (TJ)			Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRLB8748PBF INFINEON	97			預計 11個工作天	核友型號：st75141668	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	30V	4.5V, 10V	92A(Tc)	2139 pF @ 15 V	75W (Tc)	4.8mOhms @ 40A, 10V	2.35V @ 50µA	23 nC @ 4.5 V	±20V	-55°C ~ 175°C (TJ)			Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂海外位置	IRLH5030TRPBF INFINEON	9,921	22+		預計 16個工作天	核友型號：st49404771	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	4.5V, 10V	13A(TA), 100A(Tc)	5185 pF @ 50 V	3.6W(Ta), 156W(Tc)	9mOhms @ 50A, 10V	2.5V @ 150µA	94 nC @ 10 V	±16V	-55°C ~ 150°C (TJ)			Surface Mount	8-PQFN (5x6)
質量保證 B-2	來自供應商的訂	IRLH5034TRPBF INFINEON	9,012	22+	MOQ : 500 SPQ : 1	預計 11個工作天	核友型號：st76474168	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	40V	4.5V, 10V	29A(TA), 100A(Tc)	4730 pF @ 25 V	3.6W(Ta), 156W(Tc)	2.4mOhms @ 50A, 10V	2.5V @ 150µA	82 nC @ 10 V	±16V	-55°C ~ 150°C (TJ)			Surface Mount	8-PQFN (5x6)
質量保證 B-1	來自供應商的訂	IRLHM620TRPBF INFINEON	500			預計 11個工作天	核友型號：st75141669	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	TUMT3	2.5V, 10V	26A(TA), 40A(Tc)	3620 pF @ 10 V	2.7W(Ta), 37W(Tc)	2.5mOhms @ 20A, 4.5V	1.1V @ 50µA	78 nC @ 4.5 V	±12V	-55°C ~ 150°C (TJ)			Surface Mount	PQFN (3x3)
質量保證 B-1	來自供應商的訂海外位置	IRLHM620TRPBF INFINEON	31,111	22+		預計 16個工作天	核友型號：st50161990	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	TUMT3	2.5V, 10V	26A(TA), 40A(Tc)	3620 pF @ 10 V	2.7W(Ta), 37W(Tc)	2.5mOhms @ 20A, 4.5V	1.1V @ 50µA	78 nC @ 4.5 V	±12V	-55°C ~ 150°C (TJ)			Surface Mount	PQFN (3x3)