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核友管理編號		 Manufacturer Series FET Type Technology Drain to Source Voltage (Vdss) Drive Voltage (Max Rds On, Min Rds On) Current - Continuous Drain (Id) @ 25°C Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Operating Temperature Range Applications Automotive Mounting Type Device Package FET Feature
質量保證
B-2 		來自供應商的訂

IRLML6246TRPBF

IRLML6246TRPBF
INFINEON

RoHS
3,000 22/23+   MOQ : 3,000
SPQ : 1

預計 11個工作天

核友型號：st76343841

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) TUMT3 2.5V, 4.5V 4.1A (Ta) 290 pF @ 16 V 1.3W (Ta) 46mOhm @ 4.1A, 4.5V 1.1V @ 5µA 3.5 nC @ 4.5 V ±12V -55°C ~ 150°C (TJ) Surface Mount Micro3™/SOT-23
質量保證
B-2 		來自供應商的訂

IRLML6246TRPBF
INFINEON TECHNOLOGIES

222,000 N/A   MOQ : 3,000
SPQ : 3,000

預計 16個工作天

核友型號：st76681790

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) TUMT3 2.5V, 4.5V 4.1A (Ta) 290 pF @ 16 V 1.3W (Ta) 46mOhm @ 4.1A, 4.5V 1.1V @ 5µA 3.5 nC @ 4.5 V ±12V -55°C ~ 150°C (TJ) Surface Mount Micro3™/SOT-23
質量保證
B-1 		來自供應商的訂

IRLML6302TRPBF

IRLML6302TRPBF
INFINEON

1,038  

預計 11個工作天

核友型號：st75141694

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) TUMT3 2.7V, 4.5V 780mA(TA) 97 pF @ 15 V 540mW (Ta) 600mOhm @ 610mA, 4.5V 1.5V @ 250µA 3.6 nC @ 4.45 V ±12V -55°C ~ 150°C (TJ) Surface Mount Micro3?/SOT-23
質量保證
B-1 		來自供應商的訂

IRLML6302TRPBF

IRLML6302TRPBF
INFINEON

3,000  

預計 11個工作天

核友型號：st72139546

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) TUMT3 2.7V, 4.5V 780mA(TA) 97 pF @ 15 V 540mW (Ta) 600mOhm @ 610mA, 4.5V 1.5V @ 250µA 3.6 nC @ 4.45 V ±12V -55°C ~ 150°C (TJ) Surface Mount Micro3?/SOT-23
質量保證
B-1 		來自供應商的訂

IRLML6302TRPBF

IRLML6302TRPBF
INFINEON

21,000 21+  

預計 11個工作天

核友型號：st71361848

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) TUMT3 2.7V, 4.5V 780mA(TA) 97 pF @ 15 V 540mW (Ta) 600mOhm @ 610mA, 4.5V 1.5V @ 250µA 3.6 nC @ 4.45 V ±12V -55°C ~ 150°C (TJ) Surface Mount Micro3?/SOT-23
質量保證
B-2 		來自供應商的訂

IRLML6302TRPBF

IRLML6302TRPBF
INFINEON

RoHS
3,000 22/23+   MOQ : 3,000
SPQ : 1

預計 11個工作天

核友型號：st76339126

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) TUMT3 2.7V, 4.5V 780mA(TA) 97 pF @ 15 V 540mW (Ta) 600mOhm @ 610mA, 4.5V 1.5V @ 250µA 3.6 nC @ 4.45 V ±12V -55°C ~ 150°C (TJ) Surface Mount Micro3?/SOT-23
質量保證
B-1 		來自供應商的訂

IRLML6302TRPBF

IRLML6302TRPBF
INFINEON

1,561 2213  

預計 7個工作天

核友型號：st68904209

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) TUMT3 2.7V, 4.5V 780mA(TA) 97 pF @ 15 V 540mW (Ta) 600mOhm @ 610mA, 4.5V 1.5V @ 250µA 3.6 nC @ 4.45 V ±12V -55°C ~ 150°C (TJ) Surface Mount Micro3?/SOT-23
質量保證
B-2 		來自供應商的訂

IRLML6344TRPBF

IRLML6344TRPBF
INFINEON

RoHS
3,000 21+   MOQ : 3,000
SPQ : 1

預計 11個工作天

核友型號：st76356467

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 30V 2.5V, 4.5V 5A (Ta) 650 pF @ 25 V 1.3W (Ta) 29mOhm @ 5A, 4.5V 1.1V @ 10µA 6.8 nC @ 4.5 V ±12V -55°C ~ 150°C (TJ) Surface Mount Micro3?/SOT-23
質量保證
B-1 		來自供應商的訂

IRLML6344TRPBF

IRLML6344TRPBF
INFINEON

400 24+  

預計 11個工作天

核友型號：st75022089

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 30V 2.5V, 4.5V 5A (Ta) 650 pF @ 25 V 1.3W (Ta) 29mOhm @ 5A, 4.5V 1.1V @ 10µA 6.8 nC @ 4.5 V ±12V -55°C ~ 150°C (TJ) Surface Mount Micro3?/SOT-23
質量保證
B-1 		來自供應商的訂

IRLML6344TRPBF

IRLML6344TRPBF
INFINEON

64 NA  

預計 7個工作天

核友型號：st68904211

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 30V 2.5V, 4.5V 5A (Ta) 650 pF @ 25 V 1.3W (Ta) 29mOhm @ 5A, 4.5V 1.1V @ 10µA 6.8 nC @ 4.5 V ±12V -55°C ~ 150°C (TJ) Surface Mount Micro3?/SOT-23
質量保證
B-1 		來自供應商的訂
海外位置

IRLML6344TRPBF

IRLML6344TRPBF
INFINEON

25,318 25+  

預計 16個工作天

核友型號：st49404794

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 30V 2.5V, 4.5V 5A (Ta) 650 pF @ 25 V 1.3W (Ta) 29mOhm @ 5A, 4.5V 1.1V @ 10µA 6.8 nC @ 4.5 V ±12V -55°C ~ 150°C (TJ) Surface Mount Micro3?/SOT-23
質量保證
B-1 		來自供應商的訂

IRLML6346TRPBF

IRLML6346TRPBF
INFINEON

62  

預計 11個工作天

核友型號：st75141695

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 30V 2.5V, 4.5V 3.4A(TA) 270 pF @ 24 V 1.3W (Ta) 63mOhms @ 3.4A, 4.5V 1.1V @ 10µA 2.9 nC @ 4.5 V ±12V -55°C ~ 150°C (TJ) Surface Mount Micro3™/SOT-23
質量保證
B-1 		來自供應商的訂

IRLML6346TRPBF

IRLML6346TRPBF
INFINEON

4,523 25+  

預計 16個工作天

核友型號：st76078919

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 30V 2.5V, 4.5V 3.4A(TA) 270 pF @ 24 V 1.3W (Ta) 63mOhms @ 3.4A, 4.5V 1.1V @ 10µA 2.9 nC @ 4.5 V ±12V -55°C ~ 150°C (TJ) Surface Mount Micro3™/SOT-23
質量保證
B-2 		來自供應商的訂

IRLML6346TRPBF

IRLML6346TRPBF
INFINEON

RoHS
3,000 22/23+   MOQ : 3,000
SPQ : 1

預計 11個工作天

核友型號：st76353980

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 30V 2.5V, 4.5V 3.4A(TA) 270 pF @ 24 V 1.3W (Ta) 63mOhms @ 3.4A, 4.5V 1.1V @ 10µA 2.9 nC @ 4.5 V ±12V -55°C ~ 150°C (TJ) Surface Mount Micro3™/SOT-23
質量保證
B-1 		來自供應商的訂

IRLML6401TRPBF

IRLML6401TRPBF
INFINEON

4,725  

預計 11個工作天

核友型號：st75141697

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 12V 1.8V, 4.5V 4.3A (Ta) 830 pF @ 10 V 1.3W (Ta) 50mOhm @ 4.3A, 4.5V 950mV @ 250µA 15 nC @ 5 V ±8V -55°C ~ 150°C (TJ) Surface Mount Micro3?/SOT-23
質量保證
B-1 		來自供應商的訂

IRLML6401TRPBF

IRLML6401TRPBF
INFINEON

5,854  

預計 11個工作天

核友型號：st75551320

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 12V 1.8V, 4.5V 4.3A (Ta) 830 pF @ 10 V 1.3W (Ta) 50mOhm @ 4.3A, 4.5V 950mV @ 250µA 15 nC @ 5 V ±8V -55°C ~ 150°C (TJ) Surface Mount Micro3?/SOT-23
質量保證
 來自供應商的訂

IRLML6401TRPBF

IRLML6401TRPBF
INFINEON

50,320 23+  

預計 16個工作天

核友型號：st60359190

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 12V 1.8V, 4.5V 4.3A (Ta) 830 pF @ 10 V 1.3W (Ta) 50mOhm @ 4.3A, 4.5V 950mV @ 250µA 15 nC @ 5 V ±8V -55°C ~ 150°C (TJ) Surface Mount Micro3?/SOT-23
質量保證
B-1 		來自供應商的訂

IRLML6401TRPBF

IRLML6401TRPBF
INFINEON

39 2029+  

預計 4個工作天

核友型號：st74840113

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 12V 1.8V, 4.5V 4.3A (Ta) 830 pF @ 10 V 1.3W (Ta) 50mOhm @ 4.3A, 4.5V 950mV @ 250µA 15 nC @ 5 V ±8V -55°C ~ 150°C (TJ) Surface Mount Micro3?/SOT-23
質量保證
B-1 		來自供應商的訂

IRLML6401TRPBF

IRLML6401TRPBF
INFINEON

2,011 1913  

預計 7個工作天

核友型號：st68904214

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 12V 1.8V, 4.5V 4.3A (Ta) 830 pF @ 10 V 1.3W (Ta) 50mOhm @ 4.3A, 4.5V 950mV @ 250µA 15 nC @ 5 V ±8V -55°C ~ 150°C (TJ) Surface Mount Micro3?/SOT-23
質量保證
B-2 		來自供應商的訂

IRLML6401TRPBF
INFINEON TECHNOLOGIES

30,000 N/A   MOQ : 3,000
SPQ : 3,000

預計 16個工作天

核友型號：st76681791

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 12V 1.8V, 4.5V 4.3A (Ta) 830 pF @ 10 V 1.3W (Ta) 50mOhm @ 4.3A, 4.5V 950mV @ 250µA 15 nC @ 5 V ±8V -55°C ~ 150°C (TJ) Surface Mount Micro3?/SOT-23
質量保證
B-1 		來自供應商的訂

IRLML6402TR
INTERNATIONAL RECTIFIER

3,424  

預計 11個工作天

核友型號：st65351387

INTERNATIONAL RECTIFIER HEXFET® P-Channel MOSFET (Metal Oxide) TUMT3 3.7A (Ta) 633 pF @ 10 V 65mOhm @ 3.7A, 4.5V 1.2V @ 250µA 12 nC @ 5 V Surface Mount Micro3?/SOT-23
質量保證
B-1 		來自供應商的訂

IRLML6402TRPBF
INFINEON

3  

預計 11個工作天

核友型號：st75141699

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) TUMT3 2.5V, 4.5V 3.7A (Ta) 633 pF @ 10 V 1.3W (Ta) 65mOhm @ 3.7A, 4.5V 1.2V @ 250µA 12 nC @ 5 V ±12V -55°C ~ 150°C (TJ) Surface Mount Micro3?/SOT-23
質量保證
B-2 		來自供應商的訂

IRLML6402TRPBF
INFINEON

RoHS
4,647 22/25+   MOQ : 3,000
SPQ : 1

預計 11個工作天

核友型號：st76325449

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) TUMT3 2.5V, 4.5V 3.7A (Ta) 633 pF @ 10 V 1.3W (Ta) 65mOhm @ 3.7A, 4.5V 1.2V @ 250µA 12 nC @ 5 V ±12V -55°C ~ 150°C (TJ) Surface Mount Micro3?/SOT-23
質量保證
B-1 		來自供應商的訂

IRLML6402TRPBF
INFINEON

667 21+  

預計 11個工作天

核友型號：st71361849

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) TUMT3 2.5V, 4.5V 3.7A (Ta) 633 pF @ 10 V 1.3W (Ta) 65mOhm @ 3.7A, 4.5V 1.2V @ 250µA 12 nC @ 5 V ±12V -55°C ~ 150°C (TJ) Surface Mount Micro3?/SOT-23
質量保證
B-1 		來自供應商的訂

IRLML6402TRPBF
INFINEON

3,000 23+  

預計 11個工作天

核友型號：st75024711

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) TUMT3 2.5V, 4.5V 3.7A (Ta) 633 pF @ 10 V 1.3W (Ta) 65mOhm @ 3.7A, 4.5V 1.2V @ 250µA 12 nC @ 5 V ±12V -55°C ~ 150°C (TJ) Surface Mount Micro3?/SOT-23
質量保證
B-1 		來自供應商的訂

IRLML6402TRPBF
INFINEON

32 1307+  

預計 4個工作天

核友型號：st74840183

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) TUMT3 2.5V, 4.5V 3.7A (Ta) 633 pF @ 10 V 1.3W (Ta) 65mOhm @ 3.7A, 4.5V 1.2V @ 250µA 12 nC @ 5 V ±12V -55°C ~ 150°C (TJ) Surface Mount Micro3?/SOT-23
質量保證
B-1 		來自供應商的訂
海外位置

IRLML6402TRPBF
INFINEON

60,000 23+  

預計 16個工作天

End of Life 核友型號：st49404798

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) TUMT3 2.5V, 4.5V 3.7A (Ta) 633 pF @ 10 V 1.3W (Ta) 65mOhm @ 3.7A, 4.5V 1.2V @ 250µA 12 nC @ 5 V ±12V -55°C ~ 150°C (TJ) Surface Mount Micro3?/SOT-23
質量保證
B-2 		來自供應商的訂

IRLML6402TRPBF
INFINEON TECHNOLOGIES

210,000 N/A   MOQ : 3,000
SPQ : 3,000

預計 16個工作天

核友型號：st76681792

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) TUMT3 2.5V, 4.5V 3.7A (Ta) 633 pF @ 10 V 1.3W (Ta) 65mOhm @ 3.7A, 4.5V 1.2V @ 250µA 12 nC @ 5 V ±12V -55°C ~ 150°C (TJ) Surface Mount Micro3?/SOT-23
質量保證
B-2 		來自供應商的訂

IRLML9301TRPBF
INFINEON TECHNOLOGIES

30,000 N/A   MOQ : 3,000
SPQ : 3,000

預計 16個工作天

核友型號：st76681793

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 30V 4.5V, 10V 3.6A (Ta) 388 pF @ 25 V 1.3W (Ta) 64mOhms @ 3.6A, 10V 2.4V @ 10µA 4.8 nC @ 4.5 V ±20V -55°C ~ 150°C (TJ) Surface Mount Micro3?/SOT-23
質量保證
B-1 		來自供應商的訂

IRLML9301TRPBF

IRLML9301TRPBF
INFINEON

173  

預計 11個工作天

核友型號：st75141700

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 30V 4.5V, 10V 3.6A (Ta) 388 pF @ 25 V 1.3W (Ta) 64mOhms @ 3.6A, 10V 2.4V @ 10µA 4.8 nC @ 4.5 V ±20V -55°C ~ 150°C (TJ) Surface Mount Micro3?/SOT-23
質量保證
B-1 		來自供應商的訂

IRLML9301TRPBF

IRLML9301TRPBF
INFINEON

20,089 24+  

預計 16個工作天

核友型號：st76078920

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 30V 4.5V, 10V 3.6A (Ta) 388 pF @ 25 V 1.3W (Ta) 64mOhms @ 3.6A, 10V 2.4V @ 10µA 4.8 nC @ 4.5 V ±20V -55°C ~ 150°C (TJ) Surface Mount Micro3?/SOT-23
質量保證
B-2 		來自供應商的訂

IRLML9301TRPBF

IRLML9301TRPBF
INFINEON

RoHS
20,599 22/23+   MOQ : 3,000
SPQ : 1

預計 11個工作天

核友型號：st76342340

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 30V 4.5V, 10V 3.6A (Ta) 388 pF @ 25 V 1.3W (Ta) 64mOhms @ 3.6A, 10V 2.4V @ 10µA 4.8 nC @ 4.5 V ±20V -55°C ~ 150°C (TJ) Surface Mount Micro3?/SOT-23
質量保證
B-1 		來自供應商的訂

IRLML9303TRPBF
INFINEON

6,927 22+  

預計 16個工作天

核友型號：st76078921

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 30V 4.5V, 10V 2.3A (Ta) 160 pF @ 25 V 1.25W (Ta) 165mOhms @ 2.3A, 10V 2.4V @ 10µA 2 nC @ 4.5 V ±20V -55°C ~ 150°C (TJ) Surface Mount Micro3?/SOT-23
質量保證
B-1 		來自供應商的訂

IRLML9303TRPBF
INFINEON

1,026  

預計 11個工作天

核友型號：st75141701

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 30V 4.5V, 10V 2.3A (Ta) 160 pF @ 25 V 1.25W (Ta) 165mOhms @ 2.3A, 10V 2.4V @ 10µA 2 nC @ 4.5 V ±20V -55°C ~ 150°C (TJ) Surface Mount Micro3?/SOT-23
質量保證
B-1 		來自供應商的訂

IRLML9303TRPBF
INFINEON

9,000 21+  

預計 11個工作天

核友型號：st71361850

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 30V 4.5V, 10V 2.3A (Ta) 160 pF @ 25 V 1.25W (Ta) 165mOhms @ 2.3A, 10V 2.4V @ 10µA 2 nC @ 4.5 V ±20V -55°C ~ 150°C (TJ) Surface Mount Micro3?/SOT-23
質量保證
B-1 		來自供應商的訂

IRLMS1503TRPBF
INFINEON

42  

預計 11個工作天

核友型號：st75141702

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 30V 4.5V, 10V 3.2A (Ta) 210 pF @ 25 V 1.7W (Ta) 100mOhm @ 2.2A, 10V 1V @ 250µA 9.6 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Surface Mount Micro6?(TSOP-6)
質量保證
B-1 		來自供應商的訂

IRLMS1503TRPBF
INFINEON

4,081 22+  

預計 16個工作天

核友型號：st76078922

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 30V 4.5V, 10V 3.2A (Ta) 210 pF @ 25 V 1.7W (Ta) 100mOhm @ 2.2A, 10V 1V @ 250µA 9.6 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Surface Mount Micro6?(TSOP-6)
質量保證
B-1 		來自供應商的訂

IRLMS1902TRPBF

IRLMS1902TRPBF
INFINEON

100  

預計 11個工作天

核友型號：st75141703

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) TUMT3 2.7V, 4.5V 3.2A (Ta) 300 pF @ 15 V 1.7W (Ta) 100mOhms @ 2.2A, 4.5V 700mV @ 250µA(Mim) 7 nC @ 4.5 V ±12V -55°C ~ 150°C (TJ) Surface Mount Micro6?(TSOP-6)
質量保證
B-1 		來自供應商的訂

IRLMS1902TRPBF

IRLMS1902TRPBF
INFINEON

479 NA  

預計 7個工作天

核友型號：st68904220

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) TUMT3 2.7V, 4.5V 3.2A (Ta) 300 pF @ 15 V 1.7W (Ta) 100mOhms @ 2.2A, 4.5V 700mV @ 250µA(Mim) 7 nC @ 4.5 V ±12V -55°C ~ 150°C (TJ) Surface Mount Micro6?(TSOP-6)
質量保證
B-1 		來自供應商的訂

IRLMS2002TRPBF

IRLMS2002TRPBF
INFINEON

129  

預計 11個工作天

核友型號：st75141704

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) TUMT3 2.5V, 4.5V 6.5A (Ta) 1310 pF @ 15 V 2W (Ta) 30mOhm @ 6.5A, 4.5V 1.2V @ 250µA 22 nC @ 5 V ±12V -55°C ~ 150°C (TJ) Surface Mount Micro6?(SOT23-6)
質量保證
B-1 		來自供應商的訂

IRLMS6802TRPBF
INFINEON

15,173 22+  

預計 16個工作天

核友型號：st76078923

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) TUMT3 2.5V, 4.5V 5.6A (Ta) 1079 pF @ 10 V 2W (Ta) 50mOhm @ 5.1A, 4.5V 1.2V @ 250µA 16 nC @ 5 V ±12V -55°C ~ 150°C (TJ) Surface Mount Micro6?(TSOP-6)
質量保證
B-1 		來自供應商的訂

IRLMS6802TRPBF
INFINEON

841  

預計 11個工作天

核友型號：st75141705

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) TUMT3 2.5V, 4.5V 5.6A (Ta) 1079 pF @ 10 V 2W (Ta) 50mOhm @ 5.1A, 4.5V 1.2V @ 250µA 16 nC @ 5 V ±12V -55°C ~ 150°C (TJ) Surface Mount Micro6?(TSOP-6)
質量保證
B-1 		來自供應商的訂

IRLR024NTRLPBF

IRLR024NTRLPBF
INFINEON

54  

預計 11個工作天

核友型號：st75141706

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 55V 4V, 10V 17A (Tc) 480 pF @ 25 V 45W (Tc) 65mOhm @ 10A, 10V 2V @ 250µA 15 nC @ 5 V ±16V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1 		來自供應商的訂

IRLR024NTRPBF

IRLR024NTRPBF
INFINEON

967  

預計 11個工作天

核友型號：st75141707

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 55V 4V, 10V 17A (Tc) 480 pF @ 25 V 45W (Tc) 65mOhm @ 10A, 10V 2V @ 250µA 15 nC @ 5 V ±16V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1 		來自供應商的訂

IRLR024NTRPBF

IRLR024NTRPBF
INFINEON

35,000 25+  

預計 16個工作天

核友型號：st61363141

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 55V 4V, 10V 17A (Tc) 480 pF @ 25 V 45W (Tc) 65mOhm @ 10A, 10V 2V @ 250µA 15 nC @ 5 V ±16V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-2 		來自供應商的訂

IRLR024NTRPBF

IRLR024NTRPBF
INFINEON

RoHS
50,000 22/26+   MOQ : 3,000
SPQ : 1

預計 11個工作天

核友型號：st76339127

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 55V 4V, 10V 17A (Tc) 480 pF @ 25 V 45W (Tc) 65mOhm @ 10A, 10V 2V @ 250µA 15 nC @ 5 V ±16V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-2 		來自供應商的訂

IRLR024NTRPBF
INFINEON TECHNOLOGIES

215,000 N/A   MOQ : 2,000
SPQ : 2,000

預計 16個工作天

核友型號：st76681794

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 55V 4V, 10V 17A (Tc) 480 pF @ 25 V 45W (Tc) 65mOhm @ 10A, 10V 2V @ 250µA 15 nC @ 5 V ±16V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1 		來自供應商的訂

IRLR120NTRLPBF
INFINEON

50  

預計 11個工作天

核友型號：st75141708

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 4V, 10V 10A (Tc) 440 pF @ 25 V 48W (Tc) 185mOhms @ 6A, 10V 2V @ 250µA 20 nC @ 5 V ±16V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1 		來自供應商的訂

IRLR120NTRPBF
INFINEON

11,586  

預計 11個工作天

核友型號：st75141709

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 4V, 10V 10A (Tc) 440 pF @ 25 V 48W (Tc) 185mOhms @ 6A, 10V 2V @ 250µA 20 nC @ 5 V ±16V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)

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