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庫存類別供應商排名	庫存所在位置	型號 / 製造商 / 其他	庫存量	生產年份/批號	最低訂貨數量 / 後續訂購數量	預定出貨日	資訊核友管理編號	Manufacturer	Series	FET Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Operating Temperature Range	Applications	Mounting Type	Device Package	Technology	FET Feature
質量保證 B-1	來自供應商的訂海外位置	IRF150P220 INFINEON	1,491	20+		預計 16個工作天	核友型號：st49404300	Infineon Technologies					203A				4.6V				Standard
質量保證 B-1	來自供應商的訂	IRF200P222 INFINEON	4,000	21+		預計 11個工作天	核友型號：st71361744	Infineon Technologies	StrongIRFET?	N-Channel	200V	10V	182A(Tc)	9820 pF @ 50 V	556W(Tc)	6.6mOhms @ 82A, 10V	4V @ 270μA	203 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)		Through Hole	TO-247AC	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRF200S234 INFINEON	10			預計 11個工作天	核友型號：st75141147	Infineon Technologies	Trench Mosfet	N-Channel	200V	10V	90A(Tc)	6484 pF @ 50 V	417W(Tc)	16.9mOhms @ 51A, 10V	5V @ 250μA	162 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)		Surface Mount	PG-TO263-3	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRF2204SPBF INFINEON	230			預計 11個工作天	核友型號：st75141148	Infineon Technologies	HEXFETR	N-Channel	40V	10V	170A(Tc)	5890 pF @ 25 V	200W(Tc)	3.6mOhms @ 130A, 10V	4V @ 250μA	200 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)		Surface Mount	D2PAK	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRF2204SPBF INFINEON	3,000	23+		預計 16個工作天	核友型號：st76078862	Infineon Technologies	HEXFETR	N-Channel	40V	10V	170A(Tc)	5890 pF @ 25 V	200W(Tc)	3.6mOhms @ 130A, 10V	4V @ 250μA	200 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)		Surface Mount	D2PAK	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRF250P224 INFINEON TECHNOLOGIES	400		MOQ : 400 SPQ : 1	預計 11個工作天	核友型號：st70647272	Infineon Technologies	StrongIRFET?	N-Channel	250V	10V	96A(Tc)	9915 pF @ 50 V	313W(Tc)	12mOhms @ 58A, 10V	4V @ 270μA	203 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)		Through Hole	TO-247AC	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRF2804LPBF INFINEON	1			預計 11個工作天	核友型號：st75141149	Infineon Technologies	HEXFETR	N-Channel	40V		75A(Tc)	6450 pF @ 25 V	300W(Tc)	2.3mOhms @ 75A, 10V	4V @ 250μA	240 nC @ 10 V		-55°C ~ 175°C(TJ)		Through Hole	TO-262	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRF2804PBF INFINEON	4	1641+		預計 4個工作天	核友型號：st74840159	Infineon Technologies	HEXFETR	N-Channel	40V	10V	75A(Tc)	6450 pF @ 25 V	300W(Tc)	2.3mOhms @ 75A, 10V	4V @ 250μA	240 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)		Through Hole	TO-220AB	Mosfet (Metal Oxide)	Standard
質量保證 B-1	來自供應商的訂	IRF2804PBF INFINEON	70			預計 11個工作天	核友型號：st75141150	Infineon Technologies	HEXFETR	N-Channel	40V	10V	75A(Tc)	6450 pF @ 25 V	300W(Tc)	2.3mOhms @ 75A, 10V	4V @ 250μA	240 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)		Through Hole	TO-220AB	Mosfet (Metal Oxide)	Standard
質量保證 B-1	來自供應商的訂	IRF2804STRLPBF INFINEON	15			預計 11個工作天	核友型號：st75141151	Infineon Technologies	HEXFETR	N-Channel	40V	10V	75A(Tc)	6450 pF @ 25 V	300W(Tc)	2mOhms @ 75A, 10V	4V @ 250μA	240 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)		Surface Mount	D2PAK	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRF2804STRLPBF INFINEON	5	22+		預計 11個工作天	核友型號：st75024490	Infineon Technologies	HEXFETR	N-Channel	40V	10V	75A(Tc)	6450 pF @ 25 V	300W(Tc)	2mOhms @ 75A, 10V	4V @ 250μA	240 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)		Surface Mount	D2PAK	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRF2805PBF INFINEON	37			預計 11個工作天	核友型號：st75141152	Infineon Technologies	HEXFETR	N-Channel	55V	10V	75A(Tc)	5110 pF @ 25 V	330W(Tc)	4.7mOhms @ 104A, 10V	4V @ 250μA	230 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)		Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRF2805PBF INFINEON	104	2216+		預計 4個工作天	核友型號：st74840081	Infineon Technologies	HEXFETR	N-Channel	55V	10V	75A(Tc)	5110 pF @ 25 V	330W(Tc)	4.7mOhms @ 104A, 10V	4V @ 250μA	230 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)		Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRF2805STRLPBF INFINEON	5			預計 11個工作天	核友型號：st75141153	Infineon Technologies	HEXFETR	N-Channel	55V	10V	135A(Tc)	5110 pF @ 25 V	200W(Tc)	4.7mOhms @ 104A, 10V	4V @ 250μA	230 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)		Surface Mount	D2PAK	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRF2807PBF INFINEON	200			預計 11個工作天	核友型號：st75141154	Infineon Technologies	HEXFETR	N-Channel	75V	10V	82A(Tc)	3820 pF @ 25 V	230W(Tc)	13mOhms @ 43A, 10V	4V @ 250μA	160 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)		Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRF2807PBF INFINEON	9,983	21+		預計 11個工作天	核友型號：st71361745	Infineon Technologies	HEXFETR	N-Channel	75V	10V	82A(Tc)	3820 pF @ 25 V	230W(Tc)	13mOhms @ 43A, 10V	4V @ 250μA	160 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)		Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂海外位置	IRF2807PBF INFINEON	5,817	24+		預計 16個工作天	核友型號：st49404310	Infineon Technologies	HEXFETR	N-Channel	75V	10V	82A(Tc)	3820 pF @ 25 V	230W(Tc)	13mOhms @ 43A, 10V	4V @ 250μA	160 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)		Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRF2807STRLPBF INFINEON	20			預計 11個工作天	核友型號：st75141155	Infineon Technologies	HEXFETR	N-Channel	75V	10V	82A(Tc)	3820 pF @ 25 V	230W(Tc)	13mOhms @ 43A, 10V	4V @ 250μA	160 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)		Surface Mount	D2PAK	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂海外位置	IRF2807STRLPBF INFINEON	15,555	22+		預計 16個工作天	核友型號：st49404311	Infineon Technologies	HEXFETR	N-Channel	75V	10V	82A(Tc)	3820 pF @ 25 V	230W(Tc)	13mOhms @ 43A, 10V	4V @ 250μA	160 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)		Surface Mount	D2PAK	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRF2807ZPBF INFINEON	10			預計 11個工作天	核友型號：st75141156	Infineon Technologies	HEXFETR	N-Channel	75V	10V	75A(Tc)	3270 pF @ 25 V	170W(Tc)	9.4mOhms @ 53A, 10V	4V @ 250μA	110 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)		Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRF2807ZSTRLPBF INFINEON	1			預計 11個工作天	核友型號：st75141157	Infineon Technologies	HEXFETR	N-Channel	75V	10V	75A(Tc)	3270 pF @ 25 V	170W(Tc)	9.4mOhms @ 53A, 10V	4V @ 250μA	110 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)		Surface Mount	D2PAK	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRF2903ZPBF INFINEON	10			預計 11個工作天	核友型號：st75141158	Infineon Technologies	HEXFETR	N-Channel	30V	10V	75A(Tc)	6320 pF @ 25 V	290W(Tc)	2.4mOhms @ 75A, 10V	4V @ 150μA	240 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)		Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRF3007SPBF INFINEON	15			預計 11個工作天	核友型號：st75141159	Infineon Technologies	HEXFETR	N-Channel	75V	10V	62A(Tc)	3270 pF @ 25 V	120W(Tc)	12.6mOhms @ 48A, 10V	4V @ 250μA	130 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)		Surface Mount	D2PAK	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRF3007STRLPBF INFINEON	729			預計 11個工作天	核友型號：st75141160	Infineon Technologies	HEXFETR	N-Channel	75V	10V	62A(Tc)	3270 pF @ 25 V	120W(Tc)	12.6mOhms @ 48A, 10V	4V @ 250μA	130 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)		Surface Mount	D2PAK	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRF300P227 INFINEON	5			預計 11個工作天	核友型號：st75141161	Infineon Technologies	StrongIRFET?	N-Channel	300V	10V	50A(Tc)	4893 pF @ 50 V	313W(Tc)	40mOhms @ 30A, 10V	4V @ 270μA	107 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)		Through Hole	PG-TO247-3	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRF3205PBF INFINEON	45	2211+		預計 4個工作天	核友型號：st74840083	Infineon Technologies	HEXFETR	N-Channel	55V	10V	110A(Tc)	3247 pF @ 25 V	200W(Tc)	8mOhms @ 62A, 10V	4V @ 250μA	146 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)		Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRF3205PBF INFINEON	1			預計 11個工作天	核友型號：st75141162	Infineon Technologies	HEXFETR	N-Channel	55V	10V	110A(Tc)	3247 pF @ 25 V	200W(Tc)	8mOhms @ 62A, 10V	4V @ 250μA	146 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)		Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂海外位置	IRF3205PBF INFINEON	50,000	22+		預計 16個工作天	核友型號：st49404319	Infineon Technologies	HEXFETR	N-Channel	55V	10V	110A(Tc)	3247 pF @ 25 V	200W(Tc)	8mOhms @ 62A, 10V	4V @ 250μA	146 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)		Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRF3205PBF INFINEON	24,000	22+		預計 11個工作天	核友型號：st75024369	Infineon Technologies	HEXFETR	N-Channel	55V	10V	110A(Tc)	3247 pF @ 25 V	200W(Tc)	8mOhms @ 62A, 10V	4V @ 250μA	146 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)		Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRF3205PBF INFINEON TECHNOLOGIES	1,000		MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st72742466	Infineon Technologies	HEXFETR	N-Channel	55V	10V	110A(Tc)	3247 pF @ 25 V	200W(Tc)	8mOhms @ 62A, 10V	4V @ 250μA	146 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)		Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRF3205STRLPBF INFINEON	800	22+		預計 11個工作天	核友型號：st71361746	Infineon Technologies	HEXFETR	N-Channel	55V	10V	110A(Tc)	3247 pF @ 25 V	200W(Tc)	8mOhms @ 62A, 10V	4V @ 250μA	146 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)		Surface Mount	D2PAK	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRF3205STRLPBF INFINEON	340			預計 11個工作天	核友型號：st75141163	Infineon Technologies	HEXFETR	N-Channel	55V	10V	110A(Tc)	3247 pF @ 25 V	200W(Tc)	8mOhms @ 62A, 10V	4V @ 250μA	146 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)		Surface Mount	D2PAK	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRF3205STRLPBF INFINEON	6	2451+		預計 11個工作天	核友型號：st76085050	Infineon Technologies	HEXFETR	N-Channel	55V	10V	110A(Tc)	3247 pF @ 25 V	200W(Tc)	8mOhms @ 62A, 10V	4V @ 250μA	146 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)		Surface Mount	D2PAK	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRF3205ZPBF INFINEON	4,775	22+		預計 16個工作天	核友型號：st76078863	Infineon Technologies	HEXFETR	N-Channel	55V	10V	75A(Tc)	3450 pF @ 25 V	170W(Tc)	6.5mOhms @ 66A, 10V	4V @ 250μA	110 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)		Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRF3415PBF INFINEON	5			預計 11個工作天	核友型號：st75141164	Infineon Technologies	HEXFETR	N-Channel	150V	10V	43A(Tc)	2400 pF @ 25 V	200W(Tc)	42mOhms @ 22A, 10V	4V @ 250μA	200 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)		Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRF3415SPBF INFINEON	1			預計 11個工作天	核友型號：st75141165	Infineon Technologies	HEXFETR	N-Channel	150V	10V	43A(Tc)	2400 pF @ 25 V	3.8W(Ta), 200W(Tc)	42mOhms @ 22A, 10V	4V @ 250μA	200 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)		Surface Mount	D2PAK	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRF3415STRLPBF INFINEON	6,111	22+		預計 16個工作天	核友型號：st76078864	Infineon Technologies	HEXFETR	N-Channel	150V	10V	43A(Tc)	2400 pF @ 25 V	3.8W(Ta), 200W(Tc)	42mOhms @ 22A, 10V	4V @ 250μA	200 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)		Surface Mount	D2PAK	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRF3703PBF INFINEON	14			預計 11個工作天	核友型號：st75141166	Infineon Technologies	HEXFETR	N-Channel	30V	7V, 10V	210A(Tc)	8250 pF @ 25 V	3.8W(Ta), 230W(Tc)	2.8mOhms @ 76A, 10V	4V @ 250μA	209 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)		Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRF3703PBF INFINEON	3,768	18+		預計 11個工作天	核友型號：st71361747	Infineon Technologies	HEXFETR	N-Channel	30V	7V, 10V	210A(Tc)	8250 pF @ 25 V	3.8W(Ta), 230W(Tc)	2.8mOhms @ 76A, 10V	4V @ 250μA	209 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)		Through Hole	TO-220AB	Mosfet (Metal Oxide)