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庫存類別供應商排名	庫存所在位置	型號 / 製造商 / 其他	庫存量	生產年份/批號	最低訂貨數量 / 後續訂購數量	預定出貨日	資訊核友管理編號	Manufacturer	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Operating Temperature Range	Applications	Mounting Type	Device Package
質量保證 B-1	來自供應商的訂	IRFL024ZTRPBF INFINEON	14,935	18+		預計 11個工作天	核友型號：st71361794	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	10V	5.1A(TA)	340 pF @ 25 V	1W (Ta)	57.5mOhms @ 3.1A, 10V	4V @ 250µA	14 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Surface Mount	SOT-223
質量保證 B-2	來自供應商的訂	IRFL4105TRPBF INFINEON	3,000	11+	MOQ : 3,000 SPQ : 1	預計 11個工作天	核友型號：st76375951	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	10V	3.7A (Ta)	660 pF @ 25 V	1W (Ta)	45mOhms @ 3.7A, 10V	4V @ 250µA	35 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Surface Mount	SOT-223
質量保證 B-1	來自供應商的訂	IRFL4105TRPBF INFINEON	2,500	22+		預計 16個工作天	核友型號：st76078893	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	10V	3.7A (Ta)	660 pF @ 25 V	1W (Ta)	45mOhms @ 3.7A, 10V	4V @ 250µA	35 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Surface Mount	SOT-223
質量保證 B-1	來自供應商的訂	IRFL4105TRPBF INFINEON	486			預計 11個工作天	核友型號：st75141433	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	10V	3.7A (Ta)	660 pF @ 25 V	1W (Ta)	45mOhms @ 3.7A, 10V	4V @ 250µA	35 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Surface Mount	SOT-223
質量保證 B-1	來自供應商的訂	IRFL4105TRPBF INFINEON	50	NA		預計 7個工作天	核友型號：st68903989	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	10V	3.7A (Ta)	660 pF @ 25 V	1W (Ta)	45mOhms @ 3.7A, 10V	4V @ 250µA	35 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Surface Mount	SOT-223
質量保證 B-1	來自供應商的訂海外位置	IRFL4310TRPBF INFINEON	2,568	24+		預計 16個工作天	核友型號：st49404579	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10V	1.6A (Ta)	330 pF @ 25 V	1W (Ta)	200mOhm @ 1.6A, 10V	4V @ 250µA	25 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Surface Mount	SOT-223
質量保證 B-2	來自供應商的訂	IRFL4310TRPBF INFINEON	5,000	22/23+	MOQ : 2,500 SPQ : 1	預計 11個工作天	核友型號：st76386589	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10V	1.6A (Ta)	330 pF @ 25 V	1W (Ta)	200mOhm @ 1.6A, 10V	4V @ 250µA	25 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Surface Mount	SOT-223
質量保證 B-1	來自供應商的訂	IRFL4315TRPBF INFINEON	30,000	22+		預計 16個工作天	核友型號：st76078894	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	150V	10V	2.6A (Ta)	420 pF @ 25 V	2.8W (Ta)	185mOhms @ 1.6A, 10V	5V @ 250µA	19 nC @ 10 V	±30V	-55°C ~ 150°C (TJ)		Surface Mount	SOT-223
質量保證 B-1	來自供應商的訂	IRFL4315TRPBF INFINEON	500			預計 11個工作天	核友型號：st75141434	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	150V	10V	2.6A (Ta)	420 pF @ 25 V	2.8W (Ta)	185mOhms @ 1.6A, 10V	5V @ 250µA	19 nC @ 10 V	±30V	-55°C ~ 150°C (TJ)		Surface Mount	SOT-223
質量保證 B-1	來自供應商的訂	IRFL9014TRPBF VISHAY	26,000	24+		預計 16個工作天	核友型號：st73655169	VISHAY		P-Channel	MOSFET (Metal Oxide)	60V	10V	1.8A (Tc)	270 pF @ 25 V	2W (Ta), 3.1W (Tc)	500mOhm @ 1.1A, 10V	4V @ 250µA	12 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Surface Mount	SOT-223
質量保證 B-1	來自供應商的訂	IRFL9110TRPBF VISHAY	40			預計 11個工作天	核友型號：st75141435	VISHAY		P-Channel	MOSFET (Metal Oxide)	100V	10V	1.1A (Tc)	200 pF @ 25 V	2W (Ta), 3.1W (Tc)	1.2Ohm @ 660mA, 10V	4V @ 250µA	8.7 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Surface Mount	SOT-223
質量保證 B-1	來自供應商的訂	IRFL9110TRPBF VISHAY	11,297	22+		預計 16個工作天	核友型號：st76083674	VISHAY		P-Channel	MOSFET (Metal Oxide)	100V	10V	1.1A (Tc)	200 pF @ 25 V	2W (Ta), 3.1W (Tc)	1.2Ohm @ 660mA, 10V	4V @ 250µA	8.7 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Surface Mount	SOT-223
質量保證 B-1	來自供應商的訂	IRFL9110TRPBF VISHAY	260	13		預計 11個工作天	核友型號：st65370153	VISHAY		P-Channel	MOSFET (Metal Oxide)	100V	10V	1.1A (Tc)	200 pF @ 25 V	2W (Ta), 3.1W (Tc)	1.2Ohm @ 660mA, 10V	4V @ 250µA	8.7 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Surface Mount	SOT-223
質量保證 B-1	來自供應商的訂	IRFL9110TRPBF VISHAY	200	2229		預計 7個工作天	核友型號：st68903993	VISHAY		P-Channel	MOSFET (Metal Oxide)	100V	10V	1.1A (Tc)	200 pF @ 25 V	2W (Ta), 3.1W (Tc)	1.2Ohm @ 660mA, 10V	4V @ 250µA	8.7 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Surface Mount	SOT-223
質量保證 B-2	來自供應商的訂	IRFML8244TRPBF INFINEON TECHNOLOGIES	24,000	N/A	MOQ : 3,000 SPQ : 3,000	預計 16個工作天	核友型號：st76681728	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	25V	4.5V, 10V	5.8A (Ta)	430 pF @ 10 V	1.25W (Ta)	24mOhms @ 5.8A, 10V	2.35V @ 10µA	5.4 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Surface Mount	SOT-23
質量保證 B-1	來自供應商的訂	IRFML8244TRPBF INFINEON	2,981	22+		預計 16個工作天	核友型號：st76078895	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	25V	4.5V, 10V	5.8A (Ta)	430 pF @ 10 V	1.25W (Ta)	24mOhms @ 5.8A, 10V	2.35V @ 10µA	5.4 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Surface Mount	SOT-23
質量保證 B-1	來自供應商的訂	IRFML8244TRPBF INFINEON	14			預計 11個工作天	核友型號：st75141436	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	25V	4.5V, 10V	5.8A (Ta)	430 pF @ 10 V	1.25W (Ta)	24mOhms @ 5.8A, 10V	2.35V @ 10µA	5.4 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Surface Mount	SOT-23
質量保證 B-2	來自供應商的訂	IRFML8244TRPBF INFINEON	3,000	22/23+	MOQ : 3,000 SPQ : 1	預計 11個工作天	核友型號：st76348240	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	25V	4.5V, 10V	5.8A (Ta)	430 pF @ 10 V	1.25W (Ta)	24mOhms @ 5.8A, 10V	2.35V @ 10µA	5.4 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Surface Mount	SOT-23
質量保證 B-1	來自供應商的訂	IRFML8244TRPBF INFINEON	3,548			預計 11個工作天	核友型號：st70448936	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	25V	4.5V, 10V	5.8A (Ta)	430 pF @ 10 V	1.25W (Ta)	24mOhms @ 5.8A, 10V	2.35V @ 10µA	5.4 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Surface Mount	SOT-23
質量保證 B-1	來自供應商的訂	IRFP048NPBF INFINEON	20			預計 11個工作天	核友型號：st75141437	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	10V	64A (Tc)	1900 pF @ 25 V	140W (Tc)	16mOhms @ 37A, 10V	4V @ 250µA	89 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-247AC
質量保證 B-1	來自供應商的訂	IRFP054NPBF INFINEON	575			預計 11個工作天	核友型號：st75141438	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	10V	81A (Tc)	2900 pF @ 25 V	170W(Tc)	12mOhms @ 43A, 10V	4V @ 250µA	130 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-247AC
質量保證 B-2	來自供應商的訂	IRFP054NPBF INFINEON	2,997	21+	MOQ : 2,997 SPQ : 1	預計 11個工作天	核友型號：st76461851	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	10V	81A (Tc)	2900 pF @ 25 V	170W(Tc)	12mOhms @ 43A, 10V	4V @ 250µA	130 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-247AC
質量保證 B-1	來自供應商的訂	IRFP064NPBF INFINEON	465			預計 11個工作天	核友型號：st75141439	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	10V	110A(Tc)	4000 pF @ 25 V	200W(Tc)	8mOhms @ 59A, 10V	4V @ 250µA	170 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-247AC
質量保證 B-2	來自供應商的訂	IRFP064NPBF INFINEON	2,416	22/24+	MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st76444895	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	10V	110A(Tc)	4000 pF @ 25 V	200W(Tc)	8mOhms @ 59A, 10V	4V @ 250µA	170 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-247AC
質量保證 B-1	來自供應商的訂海外位置	IRFP064NPBF INFINEON	68,000	22+		預計 16個工作天	核友型號：st49404584	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	10V	110A(Tc)	4000 pF @ 25 V	200W(Tc)	8mOhms @ 59A, 10V	4V @ 250µA	170 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-247AC
質量保證 B-2	來自供應商的訂	IRFP064NPBF INFINEON TECHNOLOGIES	105,000	N/A	MOQ : 400 SPQ : 400	預計 16個工作天	核友型號：st76681729	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	10V	110A(Tc)	4000 pF @ 25 V	200W(Tc)	8mOhms @ 59A, 10V	4V @ 250µA	170 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-247AC
質量保證 B-1	來自供應商的訂	IRFP1405PBF INFINEON	20			預計 11個工作天	核友型號：st75141440	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	10V	95A (Tc)	5600 pF @ 25 V	310W(Tc)	5.3mOhms @ 95A, 10V	4V @ 250µA	180 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-247AC
質量保證 B-1	來自供應商的訂	IRFP1405PBF INFINEON	13,396	20+		預計 11個工作天	核友型號：st71361795	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	10V	95A (Tc)	5600 pF @ 25 V	310W(Tc)	5.3mOhms @ 95A, 10V	4V @ 250µA	180 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-247AC
質量保證 B-1	來自供應商的訂海外位置	IRFP1405PBF INFINEON	4,100	20+		預計 16個工作天	核友型號：st49404586	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	10V	95A (Tc)	5600 pF @ 25 V	310W(Tc)	5.3mOhms @ 95A, 10V	4V @ 250µA	180 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-247AC
質量保證 B-1	來自供應商的訂	IRFP140N INFINEON	9			預計 11個工作天	核友型號：st75141441	Infineon Technologies	IR MOSFET™	N-Channel	MOSFET (Metal Oxide)	100V	10V	33A	1400 pF @ 25 V	140W (Tc)	52 mOhms @ 10V	3V	94 nC @ 10 V	4V	-55°C ~ 175°C	Standard	Through Hole	TO-247-3
質量保證 B-1	來自供應商的訂海外位置	IRFP140NPBF INFINEON	10,000	25+		預計 16個工作天	核友型號：st50161714	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10V	33A (Tc)	1400 pF @ 25 V	140W (Tc)	52mOhms @ 16A, 10V	4V @ 250µA	94 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-247AC
質量保證 B-1	來自供應商的訂	IRFP150NPBF INFINEON	23			預計 11個工作天	核友型號：st75141442	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10V	42A (Tc)	1900 pF @ 25 V	-55°C ~ 150°C (TJ)	36mOhms @ 23A, 10V	4V @ 250µA	110 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-247AC
質量保證 B-2	來自供應商的訂	IRFP150NPBF INFINEON	14,400	20+	MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st76419234	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10V	42A (Tc)	1900 pF @ 25 V	-55°C ~ 150°C (TJ)	36mOhms @ 23A, 10V	4V @ 250µA	110 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-247AC
質量保證 B-1	來自供應商的訂	IRFP150NPBF INFINEON	50,000	20+		預計 11個工作天	核友型號：st71361796	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10V	42A (Tc)	1900 pF @ 25 V	-55°C ~ 150°C (TJ)	36mOhms @ 23A, 10V	4V @ 250µA	110 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-247AC
質量保證 B-2	來自供應商的訂	IRFP150NPBF INFINEON TECHNOLOGIES	800	N/A	MOQ : 400 SPQ : 400	預計 16個工作天	核友型號：st76681730	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10V	42A (Tc)	1900 pF @ 25 V	-55°C ~ 150°C (TJ)	36mOhms @ 23A, 10V	4V @ 250µA	110 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-247AC
質量保證 B-1	來自供應商的訂	IRFP22N50APBF INFINEON	2,190	22+		預計 16個工作天	核友型號：st76078896	Infineon Technologies
質量保證 B-1	來自供應商的訂	IRFP250MPBF INFINEON	359			預計 11個工作天	核友型號：st75141444	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	200V	10V	30A (Tc)	2159 pF @ 25 V	214W(Tc)	75mOhms @ 18A, 10V	4V @ 250µA	123 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-247AC
質量保證 B-1	來自供應商的訂	IRFP250MPBF INFINEON	400	22+		預計 8個工作天	核友型號：st70572730	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	200V	10V	30A (Tc)	2159 pF @ 25 V	214W(Tc)	75mOhms @ 18A, 10V	4V @ 250µA	123 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-247AC
質量保證 B-1	來自供應商的訂	IRFP250MPBF INFINEON	7,651	24+		預計 16個工作天	核友型號：st63301442	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	200V	10V	30A (Tc)	2159 pF @ 25 V	214W(Tc)	75mOhms @ 18A, 10V	4V @ 250µA	123 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-247AC
質量保證 B-1	來自供應商的訂	IRFP250MPBF INFINEON	10	2223+		預計 4個工作天	核友型號：st74840078	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	200V	10V	30A (Tc)	2159 pF @ 25 V	214W(Tc)	75mOhms @ 18A, 10V	4V @ 250µA	123 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-247AC
質量保證 B-2	來自供應商的訂	IRFP250MPBF INFINEON TECHNOLOGIES	8,000	N/A	MOQ : 450 SPQ : 225	預計 16個工作天	核友型號：st76681731	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	200V	10V	30A (Tc)	2159 pF @ 25 V	214W(Tc)	75mOhms @ 18A, 10V	4V @ 250µA	123 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-247AC
質量保證 B-1	來自供應商的訂	IRFP250NPBF INFINEON	560			預計 11個工作天	核友型號：st75141445	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	200V	10V	30A (Tc)	2159 pF @ 25 V	214W(Tc)	75mOhms @ 18A, 10V	4V @ 250µA	123 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-247AC
質量保證 B-1	來自供應商的訂	IRFP250NPBF INFINEON	30,000	20+		預計 11個工作天	核友型號：st71361797	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	200V	10V	30A (Tc)	2159 pF @ 25 V	214W(Tc)	75mOhms @ 18A, 10V	4V @ 250µA	123 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-247AC
質量保證 B-2	來自供應商的訂	IRFP250NPBF INFINEON	52	21+	MOQ : 52 SPQ : 1	預計 11個工作天	核友型號：st76405814	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	200V	10V	30A (Tc)	2159 pF @ 25 V	214W(Tc)	75mOhms @ 18A, 10V	4V @ 250µA	123 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-247AC
質量保證 B-1	來自供應商的訂海外位置	IRFP250NPBF INFINEON	5,119	24+		預計 16個工作天	核友型號：st49404591	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	200V	10V	30A (Tc)	2159 pF @ 25 V	214W(Tc)	75mOhms @ 18A, 10V	4V @ 250µA	123 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-247AC
質量保證 B-1	來自供應商的訂	IRFP250NPBF INFINEON	10	2145		預計 7個工作天	核友型號：st68904007	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	200V	10V	30A (Tc)	2159 pF @ 25 V	214W(Tc)	75mOhms @ 18A, 10V	4V @ 250µA	123 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-247AC
質量保證 B-1	來自供應商的訂	IRFP260MPBF INFINEON	40,335	25+		預計 16個工作天	核友型號：st76078897	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	200V	10V	50A (Tc)	4057 pF @ 25 V	300W(Tc)	40mOhms @ 28A, 10V	4V @ 250µA	234 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-247AC
質量保證 B-1	來自供應商的訂	IRFP260MPBF INFINEON	10,800	20+		預計 11個工作天	核友型號：st71361798	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	200V	10V	50A (Tc)	4057 pF @ 25 V	300W(Tc)	40mOhms @ 28A, 10V	4V @ 250µA	234 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-247AC
質量保證 B-2	來自供應商的訂	IRFP260MPBF INFINEON	1,259	22/24+	MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st76447910	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	200V	10V	50A (Tc)	4057 pF @ 25 V	300W(Tc)	40mOhms @ 28A, 10V	4V @ 250µA	234 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-247AC
質量保證 B-2	來自供應商的訂	IRFP260MPBF INFINEON TECHNOLOGIES	10,731	N/A	MOQ : 300 SPQ : 150	預計 16個工作天	核友型號：st76681732	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	200V	10V	50A (Tc)	4057 pF @ 25 V	300W(Tc)	40mOhms @ 28A, 10V	4V @ 250µA	234 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-247AC