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库存类别供应商排名	库存所在位置	型号 / 制造商 / 其他	库存量	生产批次	最低订货数量 / 后续订购数量	预定出货日	资讯核友型号	Manufacturer	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Operating Temperature Range	Mounting Type	Device Package
質量保證 B-1	来自供应商的订海外位置	IRLR120NTRPBF INFINEON	130,540	22+		預計 16個工作天	核友型号：st50162028	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	4V, 10V	10A (Tc)	440 pF @ 25 V	48W (Tc)	185mOhms @ 6A, 10V	2V @ 250µA	20 nC @ 5 V	±16V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA (DPAK)
質量保證 B-2	来自供应商的订	IRLR120NTRPBF INFINEON	7,479	22/23+	MOQ : 2,500 SPQ : 1	預計 11個工作天	核友型号：st76380189	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	4V, 10V	10A (Tc)	440 pF @ 25 V	48W (Tc)	185mOhms @ 6A, 10V	2V @ 250µA	20 nC @ 5 V	±16V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA (DPAK)
質量保證 B-1	来自供应商的订	IRLR2705PBF INFINEON	34			預計 11個工作天	核友型号：st75141710	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	4V, 10V	28A (Tc)	880 pF @ 25 V	68W (Tc)	40mOhm @ 17A, 10V	2V @ 250µA	25 nC @ 5 V	±16V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA (DPAK)
質量保證 B-1	来自供应商的订	IRLR2705TRLPBF INFINEON	89			預計 11個工作天	核友型号：st75141711	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	4V, 10V	28A (Tc)	880 pF @ 25 V	68W (Tc)	40mOhm @ 17A, 10V	2V @ 250µA	25 nC @ 5 V	±16V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA (DPAK)
質量保證 B-1	来自供应商的订	IRLR2705TRPBF INFINEON	40	2230		預計 7個工作天	核友型号：st68904224	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	4V, 10V	28A (Tc)	880 pF @ 25 V	68W (Tc)	40mOhm @ 17A, 10V	2V @ 250µA	25 nC @ 5 V	±16V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA (DPAK)
質量保證 B-2	来自供应商的订	IRLR2705TRPBF INFINEON	4,000	22/23+	MOQ : 2,000 SPQ : 1	預計 11個工作天	核友型号：st76385678	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	4V, 10V	28A (Tc)	880 pF @ 25 V	68W (Tc)	40mOhm @ 17A, 10V	2V @ 250µA	25 nC @ 5 V	±16V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA (DPAK)
質量保證 B-1	来自供应商的订	IRLR2905TRLPBF INFINEON	70			預計 11個工作天	核友型号：st75141712	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	4V, 10V	42A (Tc)	1700 pF @ 25 V	110W (Tc)	27mOhms @ 25A, 10V	2V @ 250µA	48 nC @ 5 V	±16V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA (DPAK)
質量保證 B-1	来自供应商的订	IRLR2905TRPBF INFINEON	171			預計 11個工作天	核友型号：st75141713	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	4V, 10V	42A (Tc)	1700 pF @ 25 V	110W (Tc)	27mOhms @ 25A, 10V	2V @ 250µA	48 nC @ 5 V	±16V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA (DPAK)
質量保證 B-2	来自供应商的订	IRLR2905TRPBF INFINEON	8,342	22/23+	MOQ : 500 SPQ : 1	預計 11個工作天	核友型号：st76495169	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	4V, 10V	42A (Tc)	1700 pF @ 25 V	110W (Tc)	27mOhms @ 25A, 10V	2V @ 250µA	48 nC @ 5 V	±16V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA (DPAK)
質量保證 B-2	来自供应商的订	IRLR2905TRPBF INFINEON TECHNOLOGIES	32,000	N/A	MOQ : 2,000 SPQ : 2,000	預計 16個工作天	核友型号：st76681795	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	4V, 10V	42A (Tc)	1700 pF @ 25 V	110W (Tc)	27mOhms @ 25A, 10V	2V @ 250µA	48 nC @ 5 V	±16V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA (DPAK)
質量保證 B-1	来自供应商的订	IRLR2905ZTRPBF INFINEON	10			預計 11個工作天	核友型号：st75141714	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	4.5V, 10V	42A (Tc)	1570 pF @ 25 V	110W (Tc)	13.5mOhms @ 36A, 10V	3V @ 250µA	35 nC @ 5 V	±16V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA (DPAK)
質量保證 B-1	来自供应商的订	IRLR2905ZTRPBF INFINEON	10,400	21+		預計 11個工作天	核友型号：st71361851	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	4.5V, 10V	42A (Tc)	1570 pF @ 25 V	110W (Tc)	13.5mOhms @ 36A, 10V	3V @ 250µA	35 nC @ 5 V	±16V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA (DPAK)
質量保證 B-1	来自供应商的订	IRLR2905ZTRPBF INFINEON	21,418	26+		預計 16個工作天	核友型号：st63301455	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	4.5V, 10V	42A (Tc)	1570 pF @ 25 V	110W (Tc)	13.5mOhms @ 36A, 10V	3V @ 250µA	35 nC @ 5 V	±16V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA (DPAK)
質量保證 B-2	来自供应商的订	IRLR2908TRPBF INFINEON	500	21+	MOQ : 500 SPQ : 1	預計 11個工作天	核友型号：st76422864	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	80V	4.5V, 10V	30A (Tc)	1890 pF @ 25 V	150°C (TJ)	28mOhms @ 23A, 10V	2.5V @ 250µA	33 nC @ 4.5 V	±16V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA (DPAK)
質量保證 B-1	来自供应商的订	IRLR2908TRPBF INFINEON	65	2303		預計 7個工作天	核友型号：st68904227	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	80V	4.5V, 10V	30A (Tc)	1890 pF @ 25 V	150°C (TJ)	28mOhms @ 23A, 10V	2.5V @ 250µA	33 nC @ 4.5 V	±16V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA (DPAK)
質量保證 B-1	来自供应商的订	IRLR2908TRPBF INFINEON	2,000	24+		預計 11個工作天	核友型号：st75019375	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	80V	4.5V, 10V	30A (Tc)	1890 pF @ 25 V	150°C (TJ)	28mOhms @ 23A, 10V	2.5V @ 250µA	33 nC @ 4.5 V	±16V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA (DPAK)
質量保證 B-1	来自供应商的订	IRLR3110ZTRLPBF INFINEON	79			預計 11個工作天	核友型号：st75141715	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	4.5V, 10V	42A (Tc)	3980 pF @ 25 V	140W (Tc)	14mOhms @ 38A, 10V	2.5V @ 100µA	48 nC @ 4.5 V	±16V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA (DPAK)
質量保證 B-2	来自供应商的订	IRLR3110ZTRLPBF INFINEON	30,353	22+	MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型号：st76412938	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	4.5V, 10V	42A (Tc)	3980 pF @ 25 V	140W (Tc)	14mOhms @ 38A, 10V	2.5V @ 100µA	48 nC @ 4.5 V	±16V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA (DPAK)
質量保證 B-1	来自供应商的订海外位置	IRLR3110ZTRPBF INFINEON	2,111	22+		預計 16個工作天	核友型号：st49404811	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	4.5V, 10V	42A (Tc)	3980 pF @ 25 V	140W (Tc)	14mOhms @ 38A, 10V	2.5V @ 100µA	48 nC @ 4.5 V	±16V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA (DPAK)
質量保證 B-1	来自供应商的订	IRLR3110ZTRPBF INFINEON	26			預計 11個工作天	核友型号：st75141716	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	4.5V, 10V	42A (Tc)	3980 pF @ 25 V	140W (Tc)	14mOhms @ 38A, 10V	2.5V @ 100µA	48 nC @ 4.5 V	±16V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA (DPAK)
質量保證 B-1	来自供应商的订	IRLR3110ZTRPBF INFINEON	3,304	21+		預計 11個工作天	核友型号：st71361852	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	4.5V, 10V	42A (Tc)	3980 pF @ 25 V	140W (Tc)	14mOhms @ 38A, 10V	2.5V @ 100µA	48 nC @ 4.5 V	±16V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA (DPAK)
質量保證 B-2	来自供应商的订	IRLR3110ZTRPBF INFINEON	16,000	19+	MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型号：st76412939	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	4.5V, 10V	42A (Tc)	3980 pF @ 25 V	140W (Tc)	14mOhms @ 38A, 10V	2.5V @ 100µA	48 nC @ 4.5 V	±16V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA (DPAK)
質量保證 B-1	来自供应商的订	IRLR3114ZTRPBF INFINEON	2			預計 11個工作天	核友型号：st75141717	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	40V	4.5V, 10V	42A (Tc)	3810 pF @ 25 V	140W (Tc)	4.9mOhm @ 42A, 10V	2.5V @ 100µA	56 nC @ 4.5 V	±16V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA (DPAK)
質量保證 B-2	来自供应商的订	IRLR3114ZTRPBF INFINEON	18,005	17+	MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型号：st76400945	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	40V	4.5V, 10V	42A (Tc)	3810 pF @ 25 V	140W (Tc)	4.9mOhm @ 42A, 10V	2.5V @ 100µA	56 nC @ 4.5 V	±16V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA (DPAK)
質量保證 B-1	来自供应商的订	IRLR3410TRLPBF INFINEON	55			預計 11個工作天	核友型号：st75141718	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	4V, 10V	17A (Tc)	800 pF @ 25 V	79W (Tc)	105mOhm @ 10A, 10V	2V @ 250µA	34 nC @ 5 V	±16V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA (DPAK)
質量保證 B-1	来自供应商的订	IRLR3410TRLPBF INFINEON	3,000	2122		預計 7個工作天	核友型号：st68904230	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	4V, 10V	17A (Tc)	800 pF @ 25 V	79W (Tc)	105mOhm @ 10A, 10V	2V @ 250µA	34 nC @ 5 V	±16V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA (DPAK)
質量保證 B-1	来自供应商的订	IRLR3410TRPBF INFINEON	196			預計 11個工作天	核友型号：st75141719	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	4V, 10V	17A (Tc)	800 pF @ 25 V	79W (Tc)	105mOhm @ 10A, 10V	2V @ 250µA	34 nC @ 5 V	±16V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA (DPAK)
質量保證	来自供应商的订	IRLR3410TRPBF INFINEON	5,555	24+		預計 16個工作天	核友型号：st60359225	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	4V, 10V	17A (Tc)	800 pF @ 25 V	79W (Tc)	105mOhm @ 10A, 10V	2V @ 250µA	34 nC @ 5 V	±16V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA (DPAK)
質量保證 B-1	来自供应商的订	IRLR3410TRPBF INFINEON	5,000	24+		預計 11個工作天	核友型号：st75028740	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	4V, 10V	17A (Tc)	800 pF @ 25 V	79W (Tc)	105mOhm @ 10A, 10V	2V @ 250µA	34 nC @ 5 V	±16V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA (DPAK)
質量保證 B-2	来自供应商的订	IRLR3410TRPBF INFINEON	2,070	22/24+	MOQ : 2,070 SPQ : 1	預計 11個工作天	核友型号：st76382029	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	4V, 10V	17A (Tc)	800 pF @ 25 V	79W (Tc)	105mOhm @ 10A, 10V	2V @ 250µA	34 nC @ 5 V	±16V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA (DPAK)
質量保證 B-2	来自供应商的订	IRLR3410TRPBF INFINEON TECHNOLOGIES	118,000	N/A	MOQ : 2,000 SPQ : 2,000	預計 16個工作天	核友型号：st76681796	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	4V, 10V	17A (Tc)	800 pF @ 25 V	79W (Tc)	105mOhm @ 10A, 10V	2V @ 250µA	34 nC @ 5 V	±16V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA (DPAK)
質量保證 B-1	来自供应商的订	IRLR3410TRRPBF INFINEON	59			預計 11個工作天	核友型号：st75141720	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	4V, 10V	17A (Tc)	800 pF @ 25 V	79W (Tc)	105mOhm @ 10A, 10V	2V @ 250µA	34 nC @ 5 V	±16V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA (DPAK)
質量保證 B-1	来自供应商的订	IRLR3636TR(L)PBF INFINEON	526			預計 11個工作天	核友型号：st70448941	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	60V	4.5V, 10V	50A (Tc)	3779 pF @ 50 V	143W(Tc)	6.8mOhms @ 50A, 10V	2.5V @ 100µA	49 nC @ 4.5 V	±16V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA (DPAK)
質量保證 B-1	来自供应商的订	IRLR3636TRLPBF INFINEON	468			預計 11個工作天	核友型号：st75141721	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	60V	4.5V, 10V	50A (Tc)	3779 pF @ 50 V	143W(Tc)	6.8mOhms @ 50A, 10V	2.5V @ 100µA	49 nC @ 4.5 V	±16V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA (DPAK)
質量保證 B-1	来自供应商的订	IRLR3636TRLPBF INFINEON	526			預計 11個工作天	核友型号：st70448942	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	60V	4.5V, 10V	50A (Tc)	3779 pF @ 50 V	143W(Tc)	6.8mOhms @ 50A, 10V	2.5V @ 100µA	49 nC @ 4.5 V	±16V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA (DPAK)
質量保證 B-1	来自供应商的订	IRLR3636TRPBF INFINEON	17,719	22+		預計 16個工作天	核友型号：st76078924	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	60V	4.5V, 10V	50A (Tc)	3779 pF @ 50 V	143W(Tc)	6.8mOhms @ 50A, 10V	2.5V @ 100µA	49 nC @ 4.5 V	±16V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA (DPAK)
質量保證 B-1	来自供应商的订	IRLR3705ZPBF INFINEON	65	na		預計 7個工作天	核友型号：st68904231	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	4.5V, 10V	42A (Tc)	2900 pF @ 25 V	130W (Tc)	8mOhms @ 42A, 10V	3V @ 250µA	66 nC @ 5 V	±16V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA (DPAK)
質量保證 B-1	来自供应商的订	IRLR3705ZTRPBF INFINEON	3,596	21+23+		預計 16個工作天	核友型号：st76078925	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	4.5V, 10V	42A (Tc)	2900 pF @ 25 V	130W (Tc)	8mOhms @ 42A, 10V	3V @ 250µA	66 nC @ 5 V	±16V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA (DPAK)
質量保證 B-1	来自供应商的订	IRLR3705ZTRPBF INFINEON	10			預計 11個工作天	核友型号：st75141722	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	4.5V, 10V	42A (Tc)	2900 pF @ 25 V	130W (Tc)	8mOhms @ 42A, 10V	3V @ 250µA	66 nC @ 5 V	±16V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA (DPAK)
質量保證 B-1	来自供应商的订	IRLR3705ZTRPBF INFINEON	6,020	21+		預計 11個工作天	核友型号：st71361853	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	4.5V, 10V	42A (Tc)	2900 pF @ 25 V	130W (Tc)	8mOhms @ 42A, 10V	3V @ 250µA	66 nC @ 5 V	±16V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA (DPAK)
質量保證 B-2	来自供应商的订	IRLR3705ZTRPBF INFINEON	3,546	22/24+	MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型号：st76431088	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	4.5V, 10V	42A (Tc)	2900 pF @ 25 V	130W (Tc)	8mOhms @ 42A, 10V	3V @ 250µA	66 nC @ 5 V	±16V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA (DPAK)
質量保證 B-1	来自供应商的订	IRLR3802PBF INFINEON	10			預計 11個工作天	核友型号：st75141723	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	12V	2.8V, 4.5V	84A(Tc)	2490 pF @ 6 V	88W(Tc)	8.5mOhms @ 15A, 4.5V	1.9V @ 250µA	41 nC @ 5 V	±12V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA (DPAK)
質量保證 B-1	来自供应商的订	IRLR3915TRPBF INFINEON	2			預計 11個工作天	核友型号：st75141724	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	5V, 10V	30A (Tc)	1870 pF @ 25 V	150°C (TJ)	14mOhms @ 30A, 10V	3V @ 250µA	92 nC @ 10 V	±16V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA (DPAK)
質量保證 B-2	来自供应商的订	IRLR3915TRPBF INFINEON	4,243	21+	MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型号：st76439299	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	5V, 10V	30A (Tc)	1870 pF @ 25 V	150°C (TJ)	14mOhms @ 30A, 10V	3V @ 250µA	92 nC @ 10 V	±16V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA (DPAK)
質量保證 B-1	来自供应商的订	IRLR4132TRPBF INFINEON	20			預計 11個工作天	核友型号：st75141725	Infineon Technologies
質量保證 B-1	来自供应商的订	IRLR6225TRPBF INFINEON	10			預計 11個工作天	核友型号：st75141726	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	TUMT3	2.5V, 4.5V	100A (Tc)	3770 pF @ 10 V	63W(Tc)	4mOhms @ 21A, 4.5V	1.1V @ 50µA	72 nC @ 4.5 V	±12V	-50°C ~ 150°C (TJ)	Surface Mount	TO-252AA (DPAK)
質量保證 B-1	来自供应商的订	IRLR7833TRLPBF INFINEON	530			預計 11個工作天	核友型号：st75141727	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	30V	4.5V, 10V	140A(Tc)	4010 pF @ 15 V	140W (Tc)	4.5mOhms @ 15A, 10V	2.3V @ 250µA	50 nC @ 4.5 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA (DPAK)
質量保證 B-1	来自供应商的订	IRLR7833TRPBF INFINEON	1,141	22+		預計 16個工作天	核友型号：st61363142	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	30V	4.5V, 10V	140A(Tc)	4010 pF @ 15 V	140W (Tc)	4.5mOhms @ 15A, 10V	2.3V @ 250µA	50 nC @ 4.5 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA (DPAK)
質量保證 B-1	来自供应商的订	IRLR7843TRPBF INFINEON	632			預計 11個工作天	核友型号：st75141728	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	30V	4.5V, 10V	161A (Tc)	4380 pF @ 15 V	140W (Tc)	3.3mOhm @ 15A, 10V	2.3V @ 250µA	50 nC @ 4.5 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA (DPAK)
質量保證	来自供应商的订	IRLR7843TRPBF INFINEON	7,268	22+		預計 16個工作天	核友型号：st60359237	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	30V	4.5V, 10V	161A (Tc)	4380 pF @ 15 V	140W (Tc)	3.3mOhm @ 15A, 10V	2.3V @ 250µA	50 nC @ 4.5 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA (DPAK)