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庫存類別供應商排名	庫存所在位置	型號 / 製造商 / 其他	庫存量	生產年份/批號	最低訂貨數量 / 後續訂購數量	預定出貨日	資訊核友管理編號	Manufacturer	Series	FET Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Operating Temperature Range	Mounting Type	Device Package	Technology	FET Feature
質量保證 B-1	來自供應商的訂海外位置	IRFB7430PBF INFINEON	30,000	22+		預計 16個工作天	核友型號：st49404517	Infineon Technologies	HEXFETR, StrongIRFET?	N-Channel	40V	6V, 10V	195A(Tc)	14240 pF @ 25 V	375W(Tc)	1.3mOhms @ 100A, 10V	3.9V @ 250μA	460 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFB7430PBF INFINEON	19			預計 11個工作天	核友型號：st75141352	Infineon Technologies	HEXFETR, StrongIRFET?	N-Channel	40V	6V, 10V	195A(Tc)	14240 pF @ 25 V	375W(Tc)	1.3mOhms @ 100A, 10V	3.9V @ 250μA	460 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFB7430PBF INFINEON TECHNOLOGIES	1,000		MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st70647297	Infineon Technologies	HEXFETR, StrongIRFET?	N-Channel	40V	6V, 10V	195A(Tc)	14240 pF @ 25 V	375W(Tc)	1.3mOhms @ 100A, 10V	3.9V @ 250μA	460 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFB7434PBF INFINEON	5			預計 11個工作天	核友型號：st75141353	Infineon Technologies	HEXFETR, StrongIRFET?	N-Channel	40V	6V, 10V	195A(Tc)	10820 pF @ 25 V	294W(Tc)	1.6mOhms @ 100A, 10V	3.9V @ 250μA	324 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFB7434PBF INFINEON TECHNOLOGIES	1,000		MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st72742486	Infineon Technologies	HEXFETR, StrongIRFET?	N-Channel	40V	6V, 10V	195A(Tc)	10820 pF @ 25 V	294W(Tc)	1.6mOhms @ 100A, 10V	3.9V @ 250μA	324 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證	來自供應商的訂	IRFB7437PBF INFINEON	3,934	22+		預計 16個工作天	核友型號：st60358676	Infineon Technologies	HEXFETR, StrongIRFET?	N-Channel	40V	6V, 10V	195A(Tc)	7330 pF @ 25 V	230W(Tc)	2mOhms @ 100A, 10V	3.9V @ 150μA	225 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFB7437PBF INFINEON	50			預計 11個工作天	核友型號：st75141354	Infineon Technologies	HEXFETR, StrongIRFET?	N-Channel	40V	6V, 10V	195A(Tc)	7330 pF @ 25 V	230W(Tc)	2mOhms @ 100A, 10V	3.9V @ 150μA	225 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFB7437PBF INFINEON TECHNOLOGIES	1,000		MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st70647298	Infineon Technologies	HEXFETR, StrongIRFET?	N-Channel	40V	6V, 10V	195A(Tc)	7330 pF @ 25 V	230W(Tc)	2mOhms @ 100A, 10V	3.9V @ 150μA	225 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 C-1	來自供應商的訂	IRFB7440PBF INFINEON	9,000	2131+	MOQ : 9,000 SPQ : 1	預計 8個工作天	核友型號：st66243084	Infineon Technologies	HEXFETR, StrongIRFET?	N-Channel	40V	6V, 10V	120A(Tc)	4730 pF @ 25 V	143W(Tc)	2.5mOhms @ 100A, 10V	3.9V @ 100μA	135 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFB7440PBF INFINEON	100			預計 11個工作天	核友型號：st75141355	Infineon Technologies	HEXFETR, StrongIRFET?	N-Channel	40V	6V, 10V	120A(Tc)	4730 pF @ 25 V	143W(Tc)	2.5mOhms @ 100A, 10V	3.9V @ 100μA	135 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂海外位置	IRFB7440PBF INFINEON	55,075	21+24+		預計 16個工作天	核友型號：st49404520	Infineon Technologies	HEXFETR, StrongIRFET?	N-Channel	40V	6V, 10V	120A(Tc)	4730 pF @ 25 V	143W(Tc)	2.5mOhms @ 100A, 10V	3.9V @ 100μA	135 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFB7446GPBF INFINEON	19			預計 11個工作天	核友型號：st75141356	Infineon Technologies	HEXFETR, StrongIRFET?	N-Channel	40V	6V, 10V	120A(Tc)	3183 pF @ 25 V	99W(Tc)	3.3mOhms @ 70A, 10V	3.9V @ 100μA	93 nC @ 10 V	±20V		Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFB7446PBF INFINEON	7			預計 11個工作天	核友型號：st75141357	Infineon Technologies	HEXFETR, StrongIRFET?	N-Channel	40V	6V, 10V	120A(Tc)	3183 pF @ 25 V	99W(Tc)	3.3mOhms @ 70A, 10V	3.9V @ 100μA	93 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFB7530PBF INFINEON	271			預計 11個工作天	核友型號：st75141358	Infineon Technologies	HEXFETR, StrongIRFET?	N-Channel	60V	6V, 10V	195A(Tc)	13703 pF @ 25 V	375W(Tc)	2mOhms @ 100A, 10V	3.7V @ 250μA	411 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFB7534PBF INFINEON	10			預計 11個工作天	核友型號：st75141359	Infineon Technologies	HEXFETR, StrongIRFET?	N-Channel	60V	6V, 10V	195A(Tc)	10034 pF @ 25 V	294W(Tc)	2.4mOhms @ 100A, 10V	3.7V @ 250μA	279 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂海外位置	IRFB7534PBF INFINEON	19,000	2125+		預計 16個工作天	核友型號：st49404524	Infineon Technologies	HEXFETR, StrongIRFET?	N-Channel	60V	6V, 10V	195A(Tc)	10034 pF @ 25 V	294W(Tc)	2.4mOhms @ 100A, 10V	3.7V @ 250μA	279 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFB7537PBF INFINEON	50			預計 11個工作天	核友型號：st75141360	Infineon Technologies	HEXFETR, StrongIRFET?	N-Channel	60V	6V, 10V	173A(Tc)	7020 pF @ 25 V	230W(Tc)	3.3mOhms @ 100A, 10V	3.7V @ 150μA	210 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂海外位置	IRFB7537PBF INFINEON	20,000	23+		預計 16個工作天	核友型號：st49404525	Infineon Technologies	HEXFETR, StrongIRFET?	N-Channel	60V	6V, 10V	173A(Tc)	7020 pF @ 25 V	230W(Tc)	3.3mOhms @ 100A, 10V	3.7V @ 150μA	210 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFB7540PBF INFINEON	7			預計 11個工作天	核友型號：st75141361	Infineon Technologies	HEXFETR, StrongIRFET?	N-Channel	60V	6V, 10V	110A(Tc)	4555 pF @ 25 V	160W(Tc)	5.1 mOhms @ 65A, 10V	3.7V @ 100μA	130 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFB7545PBF INFINEON	86			預計 11個工作天	核友型號：st75141362	Infineon Technologies	HEXFETR, StrongIRFET?	N-Channel	60V	6V, 10V	95A(Tc)	4010 pF @ 25 V	125W(Tc)	5.9 mOhms @ 57A, 10V	3.7V @ 100μA	110 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFB7734PBF INFINEON	50			預計 11個工作天	核友型號：st75141363	Infineon Technologies	HEXFETR, StrongIRFET?	N-Channel	75V	6V, 10V	183A(Tc)	10150 pF @ 25 V	290W(Tc)	3.5mOhms @ 100A, 10V	3.7V @ 250μA	270 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂海外位置	IRFB7734PBF INFINEON	30,000	22+		預計 16個工作天	核友型號：st49404528	Infineon Technologies	HEXFETR, StrongIRFET?	N-Channel	75V	6V, 10V	183A(Tc)	10150 pF @ 25 V	290W(Tc)	3.5mOhms @ 100A, 10V	3.7V @ 250μA	270 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFB7740PBF INFINEON	25			預計 11個工作天	核友型號：st75141364	Infineon Technologies	StrongIRFET?	N-Channel	75V	6V, 10V	87A(Tc)	4650 pF @ 25 V	143W(Tc)	7.3mOhms @ 52A, 10V	3.7V @ 100μA	122 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFD110PBF VISHAY	3,313	23+		預計 16個工作天	核友型號：st76083668
質量保證 B-1	來自供應商的訂	IRFD110PBF VISHAY	268	21+		預計 11個工作天	核友型號：st75024521
質量保證 B-1	來自供應商的訂	IRFD120 INTERNATIONAL RECTIFIER	706	95		預計 11個工作天	核友型號：st65385205	INTERNATIONAL RECTIFIER		N-Channel	100V	10V	1.3A(TA)	360 pF @ 25 V	1.3W(Ta)	270mOhms @ 780mA, 10V	4V @ 250μA	16 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	4-HVMDIP	Mosfet (Metal Oxide)	Standard
質量保證 B-1	來自供應商的訂	IRFH3702TRPBF INFINEON	13			預計 11個工作天	核友型號：st75141370	Infineon Technologies	HEXFETR	N-Channel	30V	4.5V, 10V	16A(TA), 42A(Tc)	1510 pF @ 15 V	2.8W(Ta)	7.1mOhms @ 16A, 10V	2.35V @ 25μA	14 nC @ 4.5 V	±20V	-55°C ~ 150°C(TJ)	Surface Mount	8-PQFN(3x3)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFH3707TRPBF INFINEON	1,655			預計 11個工作天	核友型號：st75141371	Infineon Technologies	HEXFETR	N-Channel	30V	4.5V, 10V	12A(TA), 29A(Tc)	755 pF @ 15 V	2.8W(Ta)	12.4mOhms @ 12A, 10V	2.35V @ 25μA	8.1 nC @ 4.5 V	±20V	-55°C ~ 150°C(TJ)	Surface Mount	8-PQFN(3x3)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFH4253DTRPBF INFINEON	497			預計 11個工作天	核友型號：st75141372	Infineon Technologies	HEXFETR	25 V	64A, 145A	1314pF @ 13V	31W, 50W	3.2mOhms @ 30A, 10V	2.1V @ 35μA	15nC @ 4.5V	MOSFET (Metal Oxide)	2 Nチャンネル(デュアル)	Logic Level Gate	-55°C ~ 150°C(TJ)	Surface Mount	PQFN(5x6)
質量保證 B-1	來自供應商的訂	IRFH4253DTRPBF INFINEON	10,930	20+		預計 11個工作天	核友型號：st71361785	Infineon Technologies	HEXFETR	25 V	64A, 145A	1314pF @ 13V	31W, 50W	3.2mOhms @ 30A, 10V	2.1V @ 35μA	15nC @ 4.5V	MOSFET (Metal Oxide)	2 Nチャンネル(デュアル)	Logic Level Gate	-55°C ~ 150°C(TJ)	Surface Mount	PQFN(5x6)
質量保證 B-1	來自供應商的訂	IRFH4255DTRPBF INFINEON	134			預計 11個工作天	核友型號：st75141373	Infineon Technologies	HEXFETR	25 V	64A, 105A	1314pF @ 13V	31W, 38W	3.2mOhms @ 30A, 10V	2.1V @ 35μA	15nC @ 4.5V	MOSFET (Metal Oxide)	2 Nチャンネル(デュアル)	Logic Level Gate	-55°C ~ 150°C(TJ)	Surface Mount	PQFN(5x6)
質量保證 B-1	來自供應商的訂海外位置	IRFH5007TRPBF INFINEON	732	22+		預計 11個工作天	核友型號：st50307656	Infineon Technologies	HEXFETR	N-Channel	75V	10V	17A(TA), 100A(Tc)	4290 pF @ 25 V	3.6W(Ta), 156W(Tc)	5.9mOhms @ 50A, 10V	4V @ 150μA	98 nC @ 10 V	±20V	-55°C ~ 150°C(TJ)	Surface Mount	8-PQFN(5x6)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFH5010TRPBF INFINEON	6,216			預計 8個工作天	核友型號：st73307695	Infineon Technologies	HEXFETR	N-Channel	100V	10V	13A(TA), 100A(Tc)	4340 pF @ 25 V	3.6W(Ta), 250W(Tc)	9mOhms @ 50A, 10V	4V @ 150μA	98 nC @ 10 V	±20V	-55°C ~ 150°C(TJ)	Surface Mount	8-PQFN(5x6)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFH5015TRPBF INFINEON	200			預計 11個工作天	核友型號：st75141374	Infineon Technologies	HEXFETR	N-Channel	150V	10V	10A(TA), 56A(Tc)	2300 pF @ 50 V	3.6W(Ta), 156W(Tc)	31mOhms @ 34A, 10V	5V @ 150μA	50 nC @ 10 V	±20V	-55°C ~ 150°C(TJ)	Surface Mount	8-PQFN(5x6)	Mosfet (Metal Oxide)	Standard
質量保證 B-1	來自供應商的訂	IRFH5020TRPBF INFINEON	1,000	18+		預計 11個工作天	核友型號：st71361786	Infineon Technologies	HEXFETR	N-Channel	200V	10V	5.1A(TA)	2290 pF @ 100 V	3.6W(Ta), 8.3W(Tc)	55mOhms @ 7.5A, 10V	5V @ 150μA	54 nC @ 10 V	±20V	-55°C ~ 150°C(TJ)	Surface Mount	8-PQFN(5x6)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFH5020TRPBF INFINEON	24			預計 11個工作天	核友型號：st75141375	Infineon Technologies	HEXFETR	N-Channel	200V	10V	5.1A(TA)	2290 pF @ 100 V	3.6W(Ta), 8.3W(Tc)	55mOhms @ 7.5A, 10V	5V @ 150μA	54 nC @ 10 V	±20V	-55°C ~ 150°C(TJ)	Surface Mount	8-PQFN(5x6)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFH5053TRPBF INFINEON	88			預計 11個工作天	核友型號：st75141376	Infineon Technologies	HEXFETR	N-Channel	100V	10V	9.3A(TA), 46A(Tc)	1510 pF @ 50 V	3.1W(Ta), 8.3W(Tc)	18mOhms @ 9.3A, 10V	4.9V @ 100μA	36 nC @ 10 V	±20V	-55°C ~ 150°C(TJ)	Surface Mount	Pqfn (5X6) Single Die	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFH5110TRPBF INFINEON	10			預計 11個工作天	核友型號：st75141377	Infineon Technologies	HEXFETR	N-Channel	100V	10V	11A(TA), 63A(Tc)	3152 pF @ 25 V	3.6W(Ta), 114W(Tc)	12.4mOhms @ 37A, 10V	4V @ 100μA	72 nC @ 10 V	±20V	-55°C ~ 150°C(TJ)	Surface Mount	8-PQFN(5x6)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFH5210TRPBF INFINEON	1			預計 11個工作天	核友型號：st75141378	Infineon Technologies	HEXFETR	N-Channel	100V	10V	10A(TA), 55A(Tc)	2570 pF @ 25 V	3.6W(Ta), 104W(Tc)	14.9mOhms @ 33A, 10V	4V @ 100μA	59 nC @ 10 V	±20V	-55°C ~ 150°C(TJ)	Surface Mount	8-PQFN(5x6)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFH5210TRPBF INFINEON	4,000	22+		預計 11個工作天	核友型號：st71361787	Infineon Technologies	HEXFETR	N-Channel	100V	10V	10A(TA), 55A(Tc)	2570 pF @ 25 V	3.6W(Ta), 104W(Tc)	14.9mOhms @ 33A, 10V	4V @ 100μA	59 nC @ 10 V	±20V	-55°C ~ 150°C(TJ)	Surface Mount	8-PQFN(5x6)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFH5210TRPBF INFINEON	12,000	21+		預計 16個工作天	核友型號：st76078887	Infineon Technologies	HEXFETR	N-Channel	100V	10V	10A(TA), 55A(Tc)	2570 pF @ 25 V	3.6W(Ta), 104W(Tc)	14.9mOhms @ 33A, 10V	4V @ 100μA	59 nC @ 10 V	±20V	-55°C ~ 150°C(TJ)	Surface Mount	8-PQFN(5x6)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFH5215TRPBF INFINEON	50			預計 11個工作天	核友型號：st75141379	Infineon Technologies	HEXFETR	N-Channel	150V	10V	5A(TA), 27A(Tc)	1350 pF @ 50 V	3.6W(Ta), 104W(Tc)	58mOhms @ 16A, 10V	5V @ 100μA	32 nC @ 10 V	±20V	-55°C ~ 150°C(TJ)	Surface Mount	PQFN(5x6)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFH5215TRPBF INFINEON	2,768	22+		預計 16個工作天	核友型號：st76078888	Infineon Technologies	HEXFETR	N-Channel	150V	10V	5A(TA), 27A(Tc)	1350 pF @ 50 V	3.6W(Ta), 104W(Tc)	58mOhms @ 16A, 10V	5V @ 100μA	32 nC @ 10 V	±20V	-55°C ~ 150°C(TJ)	Surface Mount	PQFN(5x6)	Mosfet (Metal Oxide)