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核友管理編號		 Manufacturer Series FET Type Technology Drain to Source Voltage (Vdss) Drive Voltage (Max Rds On, Min Rds On) Current - Continuous Drain (Id) @ 25°C Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Operating Temperature Range Applications Automotive Mounting Type Device Package FET Feature
質量保證
B-2 		來自供應商的訂

IRFR4620TRLPBF
INFINEON TECHNOLOGIES

51,000 N/A   MOQ : 3,000
SPQ : 3,000

預計 16個工作天

核友型號：st76681756

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 200V 10V 24A (Tc) 1710 pF @ 50 V 144W(Tc) 78mOhms @ 15A, 10V 5V @ 100µA 38 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-2 		來自供應商的訂

IRFR48ZTRPBF
INFINEON

RoHS
21,772 21+   MOQ : 1,000
SPQ : 1

預計 11個工作天

核友型號：st76415558

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 55V 10V 42A (Tc) 1720 pF @ 25 V 91W(Tc) 11mOhms @ 37A, 10V 4V @ 50µA 60 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1 		來自供應商的訂

IRFR5305TRLPBF

IRFR5305TRLPBF
INFINEON

10 2320  

預計 7個工作天

核友型號：st68904073

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 55V 10V 31A (Tc) 1200 pF @ 25 V 110W (Tc) 65mOhm @ 16A, 10V 4V @ 250µA 63 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1 		來自供應商的訂

IRFR5305TRPBF

IRFR5305TRPBF
INFINEON

1,659  

預計 11個工作天

核友型號：st75141505

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 55V 10V 31A (Tc) 1200 pF @ 25 V 110W (Tc) 65mOhm @ 16A, 10V 4V @ 250µA 63 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-2 		來自供應商的訂

IRFR5305TRPBF

IRFR5305TRPBF
INFINEON

RoHS
39,911 22/26+   MOQ : 2,000
SPQ : 1

預計 11個工作天

核友型號：st76352733

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 55V 10V 31A (Tc) 1200 pF @ 25 V 110W (Tc) 65mOhm @ 16A, 10V 4V @ 250µA 63 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1 		來自供應商的訂

IRFR5305TRPBF

IRFR5305TRPBF
INFINEON

2,000 25+  

預計 11個工作天

核友型號：st76831387

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 55V 10V 31A (Tc) 1200 pF @ 25 V 110W (Tc) 65mOhm @ 16A, 10V 4V @ 250µA 63 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1 		來自供應商的訂
海外位置

IRFR5305TRPBF

IRFR5305TRPBF
INFINEON

90,000 24+  

預計 16個工作天

核友型號：st49404656

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 55V 10V 31A (Tc) 1200 pF @ 25 V 110W (Tc) 65mOhm @ 16A, 10V 4V @ 250µA 63 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1 		來自供應商的訂

IRFR5305TRPBF

IRFR5305TRPBF
INFINEON

200 24+  

預計 11個工作天

核友型號：st75019911

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 55V 10V 31A (Tc) 1200 pF @ 25 V 110W (Tc) 65mOhm @ 16A, 10V 4V @ 250µA 63 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1 		來自供應商的訂

IRFR5305TRPBF

IRFR5305TRPBF
INFINEON

2,000 2110  

預計 7個工作天

核友型號：st68904074

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 55V 10V 31A (Tc) 1200 pF @ 25 V 110W (Tc) 65mOhm @ 16A, 10V 4V @ 250µA 63 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-2 		來自供應商的訂

IRFR5305TRPBF
INFINEON TECHNOLOGIES

242,000 N/A   MOQ : 2,000
SPQ : 2,000

預計 16個工作天

核友型號：st76681757

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 55V 10V 31A (Tc) 1200 pF @ 25 V 110W (Tc) 65mOhm @ 16A, 10V 4V @ 250µA 63 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-2 		來自供應商的訂

IRFR540ZTRLPBF
INFINEON

RoHS
9,871 22+   MOQ : 500
SPQ : 1

預計 11個工作天

核友型號：st76477660

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 10V 35A (Tc) 1690 pF @ 25 V 91W(Tc) 28.5mOhms @ 21A, 10V 4V @ 50µA 59 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1 		來自供應商的訂

IRFR540ZTRPBF
INFINEON

3,271 22+  

預計 16個工作天

核友型號：st76078903

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 10V 35A (Tc) 1690 pF @ 25 V 91W(Tc) 28.5mOhms @ 21A, 10V 4V @ 50µA 59 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1 		來自供應商的訂

IRFR540ZTRPBF
INFINEON

76  

預計 11個工作天

核友型號：st75141506

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 10V 35A (Tc) 1690 pF @ 25 V 91W(Tc) 28.5mOhms @ 21A, 10V 4V @ 50µA 59 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-2 		來自供應商的訂

IRFR540ZTRPBF
INFINEON

RoHS
2,000 22+   MOQ : 1,000
SPQ : 1

預計 11個工作天

核友型號：st76397997

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 10V 35A (Tc) 1690 pF @ 25 V 91W(Tc) 28.5mOhms @ 21A, 10V 4V @ 50µA 59 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1 		來自供應商的訂

IRFR5410TRLPBF
INFINEON

7  

預計 11個工作天

核友型號：st75141507

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 100V 10V 13A (Tc) 760 pF @ 25 V 66W (Tc) 205mOhms @ 7.8A, 10V 4V @ 250µA 58 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1 		來自供應商的訂

IRFR5410TRPBF

IRFR5410TRPBF
INFINEON

1,731  

預計 11個工作天

核友型號：st75141508

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 100V 10V 13A (Tc) 760 pF @ 25 V 66W (Tc) 205mOhms @ 7.8A, 10V 4V @ 250µA 58 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
 來自供應商的訂

IRFR5410TRPBF

IRFR5410TRPBF
INFINEON

21,656 22+  

預計 16個工作天

核友型號：st60358881

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 100V 10V 13A (Tc) 760 pF @ 25 V 66W (Tc) 205mOhms @ 7.8A, 10V 4V @ 250µA 58 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-2 		來自供應商的訂

IRFR5410TRPBF
INFINEON TECHNOLOGIES

10,000 N/A   MOQ : 2,000
SPQ : 2,000

預計 16個工作天

核友型號：st76681758

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 100V 10V 13A (Tc) 760 pF @ 25 V 66W (Tc) 205mOhms @ 7.8A, 10V 4V @ 250µA 58 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-2 		來自供應商的訂

IRFR5410TRRPBF
INFINEON

RoHS
12,000 22+   MOQ : 3,000
SPQ : 1

預計 11個工作天

核友型號：st76351430

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 100V 10V 13A (Tc) 760 pF @ 25 V 66W (Tc) 205mOhms @ 7.8A, 10V 4V @ 250µA 58 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1 		來自供應商的訂

IRFR5505TRPBF

IRFR5505TRPBF
INFINEON

17  

預計 11個工作天

核友型號：st75141509

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 55V 10V 18A (Tc) 650 pF @ 25 V 57W (Tc) 110mOhms @ 9.6A, 10V 4V @ 250µA 32 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1 		來自供應商的訂

IRFR5505TRPBF

IRFR5505TRPBF
INFINEON

12,000 21+  

預計 11個工作天

核友型號：st71361806

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 55V 10V 18A (Tc) 650 pF @ 25 V 57W (Tc) 110mOhms @ 9.6A, 10V 4V @ 250µA 32 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1 		來自供應商的訂

IRFR5505TRPBF

IRFR5505TRPBF
INFINEON

680 2409  

預計 7個工作天

核友型號：st72074469

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 55V 10V 18A (Tc) 650 pF @ 25 V 57W (Tc) 110mOhms @ 9.6A, 10V 4V @ 250µA 32 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-2 		來自供應商的訂

IRFR5505TRPBF

IRFR5505TRPBF
INFINEON

RoHS
16,000 22/23+   MOQ : 2,500
SPQ : 1

預計 11個工作天

核友型號：st76382989

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 55V 10V 18A (Tc) 650 pF @ 25 V 57W (Tc) 110mOhms @ 9.6A, 10V 4V @ 250µA 32 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1 		來自供應商的訂

IRFR6215TRLPBF
INFINEON

20  

預計 11個工作天

核友型號：st75141510

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 150V 10V 13A (Tc) 860 pF @ 25 V 110W (Tc) 295mOhms @ 6.6A, 10V 4V @ 250µA 66 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-2 		來自供應商的訂

IRFR6215TRLPBF
INFINEON

RoHS
5,667 22/23+   MOQ : 500
SPQ : 1

預計 11個工作天

核友型號：st76491609

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 150V 10V 13A (Tc) 860 pF @ 25 V 110W (Tc) 295mOhms @ 6.6A, 10V 4V @ 250µA 66 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1 		來自供應商的訂

IRFR6215TRLPBF
INFINEON

320 15+  

預計 11個工作天

核友型號：st75020090

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 150V 10V 13A (Tc) 860 pF @ 25 V 110W (Tc) 295mOhms @ 6.6A, 10V 4V @ 250µA 66 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1 		來自供應商的訂

IRFR6215TRPBF
INFINEON

205  

預計 11個工作天

核友型號：st75141511

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 150V 10V 13A (Tc) 860 pF @ 25 V 110W (Tc) 295mOhms @ 6.6A, 10V 4V @ 250µA 66 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-2 		來自供應商的訂

IRFR6215TRPBF
INFINEON

RoHS
6,578 22/23+   MOQ : 500
SPQ : 1

預計 11個工作天

核友型號：st76496394

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 150V 10V 13A (Tc) 860 pF @ 25 V 110W (Tc) 295mOhms @ 6.6A, 10V 4V @ 250µA 66 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1 		來自供應商的訂

IRFR6215TRPBF
INFINEON

25 NA  

預計 7個工作天

核友型號：st68904080

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 150V 10V 13A (Tc) 860 pF @ 25 V 110W (Tc) 295mOhms @ 6.6A, 10V 4V @ 250µA 66 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
 來自供應商的訂

IRFR6215TRPBF
INFINEON

3,832 25+  

預計 16個工作天

核友型號：st60358883

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 150V 10V 13A (Tc) 860 pF @ 25 V 110W (Tc) 295mOhms @ 6.6A, 10V 4V @ 250µA 66 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1 		來自供應商的訂

IRFR7440TRPBF
INFINEON

1,836  

預計 11個工作天

核友型號：st75141512

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 40V 6V, 10V 90A (Tc) 4610 pF @ 25 V 140W (Tc) 2.4mOhms @ 90A, 10V 3.9V @ 100µA 134 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount PG-TO252-3
質量保證
B-2 		來自供應商的訂

IRFR7440TRPBF
INFINEON

RoHS
12,000 21+   MOQ : 2,500
SPQ : 1

預計 11個工作天

核友型號：st76364400

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 40V 6V, 10V 90A (Tc) 4610 pF @ 25 V 140W (Tc) 2.4mOhms @ 90A, 10V 3.9V @ 100µA 134 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount PG-TO252-3
質量保證
B-2 		來自供應商的訂

IRFR7446TRPBF
INFINEON TECHNOLOGIES

8,000 N/A   MOQ : 2,000
SPQ : 2,000

預計 16個工作天

核友型號：st76681759

Infineon Technologies HEXFET®, StrongIRFET™ N-Channel MOSFET (Metal Oxide) 40V 6V, 10V 56A (Tc) 3150 pF @ 25 V 98W(Tc) 3.9mOhms @ 56A, 10V 3.9V @ 100µA 130 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1 		來自供應商的訂

IRFR7446TRPBF

IRFR7446TRPBF
INFINEON

10,000 21+  

預計 16個工作天

核友型號：st76078904

Infineon Technologies HEXFET®, StrongIRFET™ N-Channel MOSFET (Metal Oxide) 40V 6V, 10V 56A (Tc) 3150 pF @ 25 V 98W(Tc) 3.9mOhms @ 56A, 10V 3.9V @ 100µA 130 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1 		來自供應商的訂

IRFR7446TRPBF

IRFR7446TRPBF
INFINEON

10  

預計 11個工作天

核友型號：st75141513

Infineon Technologies HEXFET®, StrongIRFET™ N-Channel MOSFET (Metal Oxide) 40V 6V, 10V 56A (Tc) 3150 pF @ 25 V 98W(Tc) 3.9mOhms @ 56A, 10V 3.9V @ 100µA 130 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-2 		來自供應商的訂

IRFR7446TRPBF

IRFR7446TRPBF
INFINEON

RoHS
9,723 22/23+   MOQ : 1,000
SPQ : 1

預計 11個工作天

核友型號：st76434153

Infineon Technologies HEXFET®, StrongIRFET™ N-Channel MOSFET (Metal Oxide) 40V 6V, 10V 56A (Tc) 3150 pF @ 25 V 98W(Tc) 3.9mOhms @ 56A, 10V 3.9V @ 100µA 130 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1 		來自供應商的訂

IRFR7446TRPBF

IRFR7446TRPBF
INFINEON

70  

預計 7個工作天

核友型號：st72074472

Infineon Technologies HEXFET®, StrongIRFET™ N-Channel MOSFET (Metal Oxide) 40V 6V, 10V 56A (Tc) 3150 pF @ 25 V 98W(Tc) 3.9mOhms @ 56A, 10V 3.9V @ 100µA 130 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1 		來自供應商的訂

IRFR7446TRPBF

IRFR7446TRPBF
INFINEON

19,057 18+  

預計 11個工作天

核友型號：st71361807

Infineon Technologies HEXFET®, StrongIRFET™ N-Channel MOSFET (Metal Oxide) 40V 6V, 10V 56A (Tc) 3150 pF @ 25 V 98W(Tc) 3.9mOhms @ 56A, 10V 3.9V @ 100µA 130 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-2 		來自供應商的訂

IRFR7540TRPBF
INFINEON

RoHS
10,000 22+   MOQ : 2,000
SPQ : 1

預計 11個工作天

核友型號：st76356304

Infineon Technologies StrongIRFET™ N-Channel MOSFET (Metal Oxide) 60V 6V, 10V 90A (Tc) 4360 pF @ 25 V 140W (Tc) 4.8mOhms @ 66A, 10V 3.7V @ 100µA 130 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1 		來自供應商的訂

IRFR7540TRPBF
INFINEON

32,555 22+  

預計 16個工作天

核友型號：st76078905

Infineon Technologies StrongIRFET™ N-Channel MOSFET (Metal Oxide) 60V 6V, 10V 90A (Tc) 4360 pF @ 25 V 140W (Tc) 4.8mOhms @ 66A, 10V 3.7V @ 100µA 130 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1 		來自供應商的訂

IRFR7546TRPBF

IRFR7546TRPBF
INFINEON

131  

預計 11個工作天

核友型號：st75141514

Infineon Technologies StrongIRFET™ N-Channel MOSFET (Metal Oxide) 60V 6V, 10V 56A (Tc) 3020 pF @ 25 V 99W(Tc) 7.9mOhms @ 43A, 10V 3.7V @ 100µA 87 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount DPAK
質量保證
B-1 		來自供應商的訂

IRFR825TRPBF
INFINEON

34  

預計 11個工作天

核友型號：st75141515

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 500V 10V 6A (Tc) 1346 pF @ 25 V 119W(Tc) 1.3Ohms @ 3.7A, 10V 5V @ 250µA 34 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1 		來自供應商的訂

IRFR8314TRPBF

IRFR8314TRPBF
INFINEON

13  

預計 11個工作天

核友型號：st75141516

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 30V 4.5V, 10V 90A (Tc) 4945 pF @ 15 V 125W (Tc) 2.2mOhms @ 90A, 10V 2.2V @ 100µA 54 nC @ 4.5 V ±20V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1 		來自供應商的訂

IRFR9014
INTERNATIONAL RECTIFIER

775  

預計 11個工作天

核友型號：st65341012

INTERNATIONAL RECTIFIER P-Channel MOSFET (Metal Oxide) 60V 10V 5.1A(Tc) 270 pF @ 25 V 2.5W (Ta), 25W (Tc) 500mOhms @ 3.1A, 10V 4V @ 250µA 12 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Surface Mount DPAK
質量保證
B-1 		來自供應商的訂

IRFR9014
INTERNATIONAL RECTIFIER

25 2004-09  

預計 7個工作天

核友型號：st68904081

INTERNATIONAL RECTIFIER P-Channel MOSFET (Metal Oxide) 60V 10V 5.1A(Tc) 270 pF @ 25 V 2.5W (Ta), 25W (Tc) 500mOhms @ 3.1A, 10V 4V @ 250µA 12 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Surface Mount DPAK
質量保證
B-1 		來自供應商的訂

IRFR9024
INTERNATIONAL RECTIFIER

75 98  

預計 11個工作天

核友型號：st65395809

INTERNATIONAL RECTIFIER P-Channel MOSFET (Metal Oxide) 60V 10V 8.8A (Tc) 570 pF @ 25 V 2.5W(Ta), 42W(Tc) 280mOhms @ 5.3A, 10V 4V @ 250µA 19 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Surface Mount DPAK
質量保證
B-1 		來自供應商的訂

IRFR9024
INTERNATIONAL RECTIFIER

284 9536  

預計 7個工作天

核友型號：st68904082

INTERNATIONAL RECTIFIER P-Channel MOSFET (Metal Oxide) 60V 10V 8.8A (Tc) 570 pF @ 25 V 2.5W(Ta), 42W(Tc) 280mOhms @ 5.3A, 10V 4V @ 250µA 19 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Surface Mount DPAK
質量保證
B-1 		來自供應商的訂

IRFR9024NPBF
INTERNATIONAL RECTIFIER

100 10  

預計 11個工作天

核友型號：st65365301

INTERNATIONAL RECTIFIER HEXFET® P-Channel MOSFET (Metal Oxide) 55V 10V 11A (Tc) 350 pF @ 25 V 38W (Tc) 175mOhm @ 6.6A, 10V 4V @ 250µA 19 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1 		來自供應商的訂

IRFR9024NPBF
INTERNATIONAL RECTIFIER

60 N/A  

預計 7個工作天

核友型號：st76917764

INTERNATIONAL RECTIFIER HEXFET® P-Channel MOSFET (Metal Oxide) 55V 10V 11A (Tc) 350 pF @ 25 V 38W (Tc) 175mOhm @ 6.6A, 10V 4V @ 250µA 19 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1 		來自供應商的訂
91  

預計 11個工作天

核友型號：st75141518

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 55V 10V 11A (Tc) 350 pF @ 25 V 38W (Tc) 175mOhm @ 6.6A, 10V 4V @ 250µA 19 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Surface Mount TO-252AA (DPAK)

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