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庫存類別供應商排名	庫存所在位置	型號 / 製造商 / 其他	庫存量	生產年份/批號	最低訂貨數量 / 後續訂購數量	預定出貨日	資訊核友管理編號	Manufacturer	Series	FET Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Vgs (Max)	Technology	FET Feature	Operating Temperature Range	Mounting Type	Device Package
質量保證 B-2	來自供應商的訂	IRF9Z34NPBF INFINEON	2,101	21+		預計 8個工作天	核友型號：st71929239	Infineon Technologies	HEXFETR	P-Channel	55V	10V	19A(Tc)	620pF @ 25 V	68W(Tc)	100mOhms @ 10A, 10V	4V @ 250µA	±20V	Mosfet (Metal Oxide)		-55°C ~ 175°C(TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF9Z34NPBF INFINEON	1,000	24+		預計 12個工作天	核友型號：st70710645	Infineon Technologies	HEXFETR	P-Channel	55V	10V	19A(Tc)	620pF @ 25 V	68W(Tc)	100mOhms @ 10A, 10V	4V @ 250µA	±20V	Mosfet (Metal Oxide)		-55°C ~ 175°C(TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF9Z34NPBF INFINEON	343			預計 11個工作天	核友型號：st67960155	Infineon Technologies	HEXFETR	P-Channel	55V	10V	19A(Tc)	620pF @ 25 V	68W(Tc)	100mOhms @ 10A, 10V	4V @ 250µA	±20V	Mosfet (Metal Oxide)		-55°C ~ 175°C(TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF9Z34NPBF INFINEON	200			預計 91個工作天	核友型號：st68903917	Infineon Technologies	HEXFETR	P-Channel	55V	10V	19A(Tc)	620pF @ 25 V	68W(Tc)	100mOhms @ 10A, 10V	4V @ 250µA	±20V	Mosfet (Metal Oxide)		-55°C ~ 175°C(TJ)	Through Hole	TO-220AB
質量保證 B-2	來自供應商的訂	IRF9Z34NSTRLPBF INFINEON	700	22+		預計 8個工作天	核友型號：st71928173	Infineon Technologies	HEXFETR	P-Channel	55V	10V	19A(Tc)	620pF @ 25 V	3.8W(Ta), 68W(Tc)	100mOhms @ 10A, 10V	4V @ 250µA	±20V	Mosfet (Metal Oxide)		-55°C ~ 175°C(TJ)	Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂	IRF9Z34NSTRLPBF INFINEON	100	21+		預計 12個工作天	核友型號：st64280054	Infineon Technologies	HEXFETR	P-Channel	55V	10V	19A(Tc)	620pF @ 25 V	3.8W(Ta), 68W(Tc)	100mOhms @ 10A, 10V	4V @ 250µA	±20V	Mosfet (Metal Oxide)		-55°C ~ 175°C(TJ)	Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂	IRF9Z34NSTRLPBF INFINEON	19			預計 6個工作天	核友型號：st72165629	Infineon Technologies	HEXFETR	P-Channel	55V	10V	19A(Tc)	620pF @ 25 V	3.8W(Ta), 68W(Tc)	100mOhms @ 10A, 10V	4V @ 250µA	±20V	Mosfet (Metal Oxide)		-55°C ~ 175°C(TJ)	Surface Mount	D2PAK
質量保證 B-2	來自供應商的訂	IRFB260NPBF INFINEON	1,300	21+		預計 8個工作天	核友型號：st71928827	Infineon Technologies	HEXFETR	N-Channel	200V	10V	56A(Tc)	4220pF @ 25 V	380W(Tc)	40mOhms @ 34A, 10V	4V @ 250µA	±20V	Mosfet (Metal Oxide)		-55°C ~ 175°C(TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRFB260NPBF INFINEON	100			預計 11個工作天	核友型號：st67960156	Infineon Technologies	HEXFETR	N-Channel	200V	10V	56A(Tc)	4220pF @ 25 V	380W(Tc)	40mOhms @ 34A, 10V	4V @ 250µA	±20V	Mosfet (Metal Oxide)		-55°C ~ 175°C(TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂海外位置	IRFB260NPBF INFINEON	6,000			預計 11個工作天	核友型號：st50102772	Infineon Technologies	HEXFETR	N-Channel	200V	10V	56A(Tc)	4220pF @ 25 V	380W(Tc)	40mOhms @ 34A, 10V	4V @ 250µA	±20V	Mosfet (Metal Oxide)		-55°C ~ 175°C(TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRFB3006GPBF INFINEON	150			預計 11個工作天	核友型號：st67960157	Infineon Technologies	HEXFETR	N-Channel	60V	10V	195A(Tc)	8970pF @ 50 V	375W(Tc)	2.5mOhms @ 170A, 10V	4V @ 250µA	±20V	Mosfet (Metal Oxide)		-55°C ~ 175°C(TJ)	Through Hole	TO-220AB
質量保證 B-2	來自供應商的訂	IRFB3006GPBF INFINEON	100	20+		預計 8個工作天	核友型號：st71930518	Infineon Technologies	HEXFETR	N-Channel	60V	10V	195A(Tc)	8970pF @ 50 V	375W(Tc)	2.5mOhms @ 170A, 10V	4V @ 250µA	±20V	Mosfet (Metal Oxide)		-55°C ~ 175°C(TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRFB3006PBF INFINEON	2,168	2019+		預計 7個工作天	核友型號：st66725313	Infineon Technologies	HEXFETR	N-Channel	60V	10V	195A(Tc)	8970pF @ 50 V	375W(Tc)	2.5mOhms @ 170A, 10V	4V @ 250µA	±20V	Mosfet (Metal Oxide)		-55°C ~ 175°C(TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRFB3077PBF INFINEON	100			預計 11個工作天	核友型號：st67960158	Infineon Technologies	HEXFETR	N-Channel	75V	10V	120A(Tc)	9400pF @ 50 V	370W(Tc)	3.3mOhms @ 75A, 10V	4V @ 250µA	±20V	Mosfet (Metal Oxide)		-55°C ~ 175°C(TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRFB3077PBF INFINEON	12,600	20+		預計 11個工作天	核友型號：st71361775	Infineon Technologies	HEXFETR	N-Channel	75V	10V	120A(Tc)	9400pF @ 50 V	370W(Tc)	3.3mOhms @ 75A, 10V	4V @ 250µA	±20V	Mosfet (Metal Oxide)		-55°C ~ 175°C(TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRFB3077PBF INFINEON	500	21+		預計 12個工作天	核友型號：st64540968	Infineon Technologies	HEXFETR	N-Channel	75V	10V	120A(Tc)	9400pF @ 50 V	370W(Tc)	3.3mOhms @ 75A, 10V	4V @ 250µA	±20V	Mosfet (Metal Oxide)		-55°C ~ 175°C(TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂海外位置	IRFB3077PBF INFINEON	4,050	21+		預計 16個工作天	核友型號：st49404490	Infineon Technologies	HEXFETR	N-Channel	75V	10V	120A(Tc)	9400pF @ 50 V	370W(Tc)	3.3mOhms @ 75A, 10V	4V @ 250µA	±20V	Mosfet (Metal Oxide)		-55°C ~ 175°C(TJ)	Through Hole	TO-220AB
質量保證 B-2	來自供應商的訂	IRFB3077PBF INFINEON	3,000	21+		預計 8個工作天	核友型號：st71929538	Infineon Technologies	HEXFETR	N-Channel	75V	10V	120A(Tc)	9400pF @ 50 V	370W(Tc)	3.3mOhms @ 75A, 10V	4V @ 250µA	±20V	Mosfet (Metal Oxide)		-55°C ~ 175°C(TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRFB3077PBF INFINEON	995			預計 91個工作天	核友型號：st68903920	Infineon Technologies	HEXFETR	N-Channel	75V	10V	120A(Tc)	9400pF @ 50 V	370W(Tc)	3.3mOhms @ 75A, 10V	4V @ 250µA	±20V	Mosfet (Metal Oxide)		-55°C ~ 175°C(TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂海外位置	IRFB3077PBF INFINEON	6,000			預計 11個工作天	核友型號：st50102774	Infineon Technologies	HEXFETR	N-Channel	75V	10V	120A(Tc)	9400pF @ 50 V	370W(Tc)	3.3mOhms @ 75A, 10V	4V @ 250µA	±20V	Mosfet (Metal Oxide)		-55°C ~ 175°C(TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂海外位置	IRFB31N20DPBF INFINEON	800	1307+		預計 16個工作天	End of Life 核友型號：st50161600	Infineon Technologies	HEXFETR	N-Channel	200V	10V	31A(Tc)	2370pF @ 25 V	3.1W(Ta), 200W(Tc)	82mOhms @ 18A, 10V	5.5V @ 250µA	±30V	Mosfet (Metal Oxide)		-55°C ~ 175°C(TJ)	Through Hole	TO-220AB
質量保證 B-2	來自供應商的訂	IRFB31N20DPBF INFINEON	1,068	21+		預計 8個工作天	核友型號：st71928734	Infineon Technologies	HEXFETR	N-Channel	200V	10V	31A(Tc)	2370pF @ 25 V	3.1W(Ta), 200W(Tc)	82mOhms @ 18A, 10V	5.5V @ 250µA	±30V	Mosfet (Metal Oxide)		-55°C ~ 175°C(TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRFB3206PBF INFINEON	500	22+		預計 12個工作天	核友型號：st62782123	Infineon Technologies	HEXFETR	N-Channel	60V	10V	120A(Tc)	6540pF @ 50 V	300W(Tc)	3mOhms @ 75A, 10V	4V @ 150µA	±20V	Mosfet (Metal Oxide)		-55°C ~ 175°C(TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂海外位置	IRFB3206PBF INFINEON	6,000			預計 11個工作天	核友型號：st50102775	Infineon Technologies	HEXFETR	N-Channel	60V	10V	120A(Tc)	6540pF @ 50 V	300W(Tc)	3mOhms @ 75A, 10V	4V @ 150µA	±20V	Mosfet (Metal Oxide)		-55°C ~ 175°C(TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRFB3206PBF INFINEON	2,000	20+		預計 11個工作天	核友型號：st71361776
質量保證 B-1	來自供應商的訂	IRFB3206PBF INFINEON	1	21+		預計 11個工作天	核友型號：st70577570
質量保證 B-2	來自供應商的訂	IRFB3206PBF INFINEON	200	21+		預計 8個工作天	核友型號：st71929097
質量保證 B-1	來自供應商的訂	IRFB3207PBF INFINEON	14,200	20+		預計 11個工作天	核友型號：st71361777	Infineon Technologies	HEXFETR	N-Channel	75V	10V	170A(Tc)	7600pF @ 50 V	330W(Tc)	4.5mOhms @ 75A, 10V	4V @ 250µA	±20V	Mosfet (Metal Oxide)		-55°C ~ 175°C(TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRFB3207PBF INFINEON	10			預計 11個工作天	核友型號：st67960159	Infineon Technologies	HEXFETR	N-Channel	75V	10V	170A(Tc)	7600pF @ 50 V	330W(Tc)	4.5mOhms @ 75A, 10V	4V @ 250µA	±20V	Mosfet (Metal Oxide)		-55°C ~ 175°C(TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂海外位置	IRFB3207ZPBF INFINEON	4,200	18+		預計 16個工作天	核友型號：st49404493	Infineon Technologies	HEXFETR	N-Channel	75V	10V	120A(Tc)	6920pF @ 50 V	300W(Tc)	4.1mOhms @ 75A, 10V	4V @ 150µA	±20V	Mosfet (Metal Oxide)		-55°C ~ 175°C(TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRFB3306GPBF INFINEON	50			預計 11個工作天	核友型號：st67960160	Infineon Technologies	HEXFETR	N-Channel	60V	10V	120A(Tc)	4520pF @ 50 V	230W(Tc)	4.2mOhms @ 75A, 10V	4V @ 150µA	±20V	Mosfet (Metal Oxide)		-55°C ~ 175°C(TJ)	Through Hole	TO-220AB
質量保證 B-2	來自供應商的訂	IRFB3306GPBF INFINEON	10,000	21+		預計 8個工作天	核友型號：st71928683	Infineon Technologies	HEXFETR	N-Channel	60V	10V	120A(Tc)	4520pF @ 50 V	230W(Tc)	4.2mOhms @ 75A, 10V	4V @ 150µA	±20V	Mosfet (Metal Oxide)		-55°C ~ 175°C(TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRFB3306PBF INFINEON	330	21+		預計 12個工作天	核友型號：st64280055	Infineon Technologies	HEXFETR	N-Channel	60V	10V	120A(Tc)	4520pF @ 50 V	230W(Tc)	4.2mOhms @ 75A, 10V	4V @ 150µA	±20V	Mosfet (Metal Oxide)		-55°C ~ 175°C(TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRFB3306PBF INFINEON	5,485	21+		預計 16個工作天	核友型號：st61363131	Infineon Technologies	HEXFETR	N-Channel	60V	10V	120A(Tc)	4520pF @ 50 V	230W(Tc)	4.2mOhms @ 75A, 10V	4V @ 150µA	±20V	Mosfet (Metal Oxide)		-55°C ~ 175°C(TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRFB3306PBF INFINEON	167			預計 11個工作天	核友型號：st67960161
質量保證 B-1	來自供應商的訂	IRFB3306PBF INFINEON	20,000	21+		預計 11個工作天	核友型號：st71361778
質量保證 B-2	來自供應商的訂	IRFB3306PBF INFINEON	6,000	21+		預計 8個工作天	核友型號：st71930072
質量保證 B-2	來自供應商的訂	IRFB3307ZPBF INFINEON	2,780	21+	MOQ : 2,780 SPQ : 1	預計 8個工作天	核友型號：st62600954	Infineon Technologies	HEXFETR	N-Channel	75V	10V	120A(Tc)	4750pF @ 50 V	230W(Tc)	5.8mOhms @ 75A, 10V	4V @ 150µA	±20V	Mosfet (Metal Oxide)		-55°C ~ 175°C(TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRFB3307ZPBF INFINEON	96			預計 11個工作天	核友型號：st67960162
質量保證 B-1	來自供應商的訂海外位置	IRFB3407ZPBF INFINEON	3,000			預計 16個工作天	核友型號：st49404497
質量保證 C-1	來自供應商的訂	IRFB3607PBF INFINEON / IR	500	21+		預計 11個工作天	核友型號：st71717071	Infineon Technologies	HEXFETR	N-Channel	75V	10V	80A(Tc)	3070pF @ 50 V	140W(Tc)	9mOhms @ 46A, 10V	4V @ 100µA	±20V	Mosfet (Metal Oxide)	Standard	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB
質量保證 B-2	來自供應商的訂	IRFB3607PBF INFINEON	64,850	23+		預計 8個工作天	核友型號：st71926596	Infineon Technologies	HEXFETR	N-Channel	75V	10V	80A(Tc)	3070pF @ 50 V	140W(Tc)	9mOhms @ 46A, 10V	4V @ 100µA	±20V	Mosfet (Metal Oxide)		-55°C ~ 175°C(TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRFB3607PBF INFINEON	1,921	21+		預計 12個工作天	核友型號：st62787352	Infineon Technologies	HEXFETR	N-Channel	75V	10V	80A(Tc)	3070pF @ 50 V	140W(Tc)	9mOhms @ 46A, 10V	4V @ 100µA	±20V	Mosfet (Metal Oxide)		-55°C ~ 175°C(TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRFB3607PBF INFINEON	12,000	2437		預計 11個工作天	核友型號：st70452959	Infineon Technologies	HEXFETR	N-Channel	75V	10V	80A(Tc)	3070pF @ 50 V	140W(Tc)	9mOhms @ 46A, 10V	4V @ 100µA	±20V	Mosfet (Metal Oxide)		-55°C ~ 175°C(TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRFB3607PBF INFINEON	339			預計 11個工作天	核友型號：st67960163	Infineon Technologies	HEXFETR	N-Channel	75V	10V	80A(Tc)	3070pF @ 50 V	140W(Tc)	9mOhms @ 46A, 10V	4V @ 100µA	±20V	Mosfet (Metal Oxide)		-55°C ~ 175°C(TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRFB3607PBF INFINEON	689	11+		預計 11個工作天	核友型號：st60742252	Infineon Technologies	HEXFETR	N-Channel	75V	10V	80A(Tc)	3070pF @ 50 V	140W(Tc)	9mOhms @ 46A, 10V	4V @ 100µA	±20V	Mosfet (Metal Oxide)		-55°C ~ 175°C(TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂海外位置	IRFB3607PBF INFINEON	6,000			預計 11個工作天	核友型號：st50102777	Infineon Technologies	HEXFETR	N-Channel	75V	10V	80A(Tc)	3070pF @ 50 V	140W(Tc)	9mOhms @ 46A, 10V	4V @ 100µA	±20V	Mosfet (Metal Oxide)		-55°C ~ 175°C(TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂海外位置	IRFB3806PBF INFINEON	6,000			預計 11個工作天	核友型號：st50102778	Infineon Technologies	HEXFETR	N-Channel	60V	10V	43A(Tc)	1150pF @ 50 V	71W(Tc)	15.8mOhms @ 25A, 10V	4V @ 50µA	±20V	Mosfet (Metal Oxide)		-55°C ~ 175°C(TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂海外位置	IRFB38N20DPBF INFINEON	6,000	22+		預計 12個工作天	核友型號：st48989178	Infineon Technologies	HEXFETR	N-Channel	200V	10V	43A(Tc)	2900pF @ 25 V	3.8W(Ta), 300W(Tc)	54mOhms @ 26A, 10V	5V @ 250µA	±20V	Mosfet (Metal Oxide)	Standard	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB
質量保證 B-2	來自供應商的訂	IRFB38N20DPBF INFINEON	6,000	22+		預計 8個工作天	核友型號：st71928108	Infineon Technologies	HEXFETR	N-Channel	200V	10V	43A(Tc)	2900pF @ 25 V	3.8W(Ta), 300W(Tc)	54mOhms @ 26A, 10V	5V @ 250µA	±20V	Mosfet (Metal Oxide)	Standard	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB