Semiconductors-Discrete semiconductors-FETs | CoreStaff ONLINE

日本半導體・電子部品零件・模組產品的購物網站

Language: 繁體中文 - ZH-TW ▼

Currency: USD ▼
- RMB

新會員登錄

登錄

查看購物車

客服洽詢

Top >
Semiconductors > Discrete semiconductors >
FETs

Manufacturer

清除

點擊數22753～ / 型號名稱： / 狀態：全部 / 數量：0PCS~

Page　314 of 456

搜尋結果(Excel)

庫存類別供應商排名	庫存所在位置	型號 / 製造商 / 其他	庫存量	生產年份/批號	最低訂貨數量 / 後續訂購數量	預定出貨日	資訊核友管理編號	Manufacturer	Series	FET Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Operating Temperature Range	Mounting Type	Device Package	Technology
質量保證 B-1	來自供應商的訂	IRFH9310TRPBF INFINEON	83			預計 11個工作天	核友型號：st75141406	Infineon Technologies	HEXFETR	P-Channel	30V	4.5V, 10V	21A(TA), 40A(Tc)	5250 pF @ 15 V	3.1W(Ta)	4.6mOhms @ 21A, 10V	2.4V @ 100μA	58 nC @ 4.5 V	±20V	-55°C ~ 150°C(TJ)	Surface Mount	PQFN(5x6)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂海外位置	IRFH9310TRPBF INFINEON	11,985	25+		預計 16個工作天	核友型號：st49404562	Infineon Technologies	HEXFETR	P-Channel	30V	4.5V, 10V	21A(TA), 40A(Tc)	5250 pF @ 15 V	3.1W(Ta)	4.6mOhms @ 21A, 10V	2.4V @ 100μA	58 nC @ 4.5 V	±20V	-55°C ~ 150°C(TJ)	Surface Mount	PQFN(5x6)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFHM3911TRPBF INFINEON	2,457			預計 11個工作天	核友型號：st75141407	Infineon Technologies	HEXFETR	N-Channel	100V	10V	3.2A(TA), 20A(Tc)	760 pF @ 50 V	2.8W(Ta), 29W(Tc)	115 mOhms @ 6.3A, 10V	4V @ 35μA	26 nC @ 10 V	±20V	-55°C ~ 150°C(TJ)	Surface Mount	8-PQFN(3x3)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFHM792TRPBF INFINEON	157			預計 11個工作天	核友型號：st75141408	Infineon Technologies	HEXFETR	100 V	2.3 A	251pF @ 25V	2.3W	195mOhms @ 2.9A, 10V	4V @ 10μA	6.3nC @ 10V	MOSFET (Metal Oxide)	2 Nチャンネル(デュアル)		-55°C ~ 150°C(TJ)	Surface Mount	8-PQFN(3.3x3.3), Power33
質量保證 B-1	來自供應商的訂	IRFHM830TRPBF INFINEON	6			預計 11個工作天	核友型號：st75141409	Infineon Technologies	HEXFETR	N-Channel	30V	4.5V, 10V	21A(TA), 40A(Tc)	2155 pF @ 25 V	2.7W(Ta), 37W(Tc)	3.8mOhms @ 20A, 10V	2.35V @ 50μA	31 nC @ 10 V	±20V	-55°C ~ 150°C(TJ)	Surface Mount	8-PQFN-Dual(3.3x3.3)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFHM830TRPBF INFINEON	12,000	16+		預計 11個工作天	核友型號：st71361792	Infineon Technologies	HEXFETR	N-Channel	30V	4.5V, 10V	21A(TA), 40A(Tc)	2155 pF @ 25 V	2.7W(Ta), 37W(Tc)	3.8mOhms @ 20A, 10V	2.35V @ 50μA	31 nC @ 10 V	±20V	-55°C ~ 150°C(TJ)	Surface Mount	8-PQFN-Dual(3.3x3.3)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFHM830TRPBF INFINEON	7,827	23+		預計 16個工作天	核友型號：st63301441	Infineon Technologies	HEXFETR	N-Channel	30V	4.5V, 10V	21A(TA), 40A(Tc)	2155 pF @ 25 V	2.7W(Ta), 37W(Tc)	3.8mOhms @ 20A, 10V	2.35V @ 50μA	31 nC @ 10 V	±20V	-55°C ~ 150°C(TJ)	Surface Mount	8-PQFN-Dual(3.3x3.3)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFHM831TRPBF INFINEON	3,780			預計 8個工作天	核友型號：st73307698	Infineon Technologies	HEXFETR	N-Channel	30V	4.5V, 10V	14A(TA), 40A(Tc)	1050 pF @ 25 V	2.5W(Ta), 27W(Tc)	7.8mOhms @ 12A, 10V	2.35V @ 25μA	16 nC @ 10 V	±20V	-55°C ~ 150°C(TJ)	Surface Mount	PQFN(3x3)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFHM831TRPBF INFINEON	3			預計 11個工作天	核友型號：st75141410	Infineon Technologies	HEXFETR	N-Channel	30V	4.5V, 10V	14A(TA), 40A(Tc)	1050 pF @ 25 V	2.5W(Ta), 27W(Tc)	7.8mOhms @ 12A, 10V	2.35V @ 25μA	16 nC @ 10 V	±20V	-55°C ~ 150°C(TJ)	Surface Mount	PQFN(3x3)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFHM831TRPBF INFINEON	3,780	17+		預計 11個工作天	核友型號：st71361793	Infineon Technologies	HEXFETR	N-Channel	30V	4.5V, 10V	14A(TA), 40A(Tc)	1050 pF @ 25 V	2.5W(Ta), 27W(Tc)	7.8mOhms @ 12A, 10V	2.35V @ 25μA	16 nC @ 10 V	±20V	-55°C ~ 150°C(TJ)	Surface Mount	PQFN(3x3)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFHM8329TRPBF INFINEON	50			預計 11個工作天	核友型號：st75141411	Infineon Technologies	HEXFETR	N-Channel	30V	4.5V, 10V	16A(TA), 57A(Tc)	1710 pF @ 10 V	2.6W(Ta), 33W(Tc)	6.1mOhms @ 20A, 10V	2.2V @ 25μA	26 nC @ 10 V	±20V	-55°C ~ 150°C(TJ)	Surface Mount	PQFN(3x3)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFHM8330TRPBF INFINEON	100			預計 11個工作天	核友型號：st75141412	Infineon Technologies	HEXFETR	N-Channel	30V	4.5V, 10V	16A(TA)	1450 pF @ 25 V	2.7W(Ta), 33W(Tc)	6.6mOhms @ 20A, 10V	2.35V @ 25μA	20 nC @ 10 V	±20V	-55°C ~ 150°C(TJ)	Surface Mount	8-PQFN(3.3x3.3), Power33	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFHM8334TRPBF INFINEON	8,950	21+22+		預計 11個工作天	核友型號：st70448935	Infineon Technologies	HEXFETR	N-Channel	30V	4.5V, 10V	13A(TA)	1180 pF @ 10 V	2.7W(Ta), 28W(Tc)	9mOhms @ 20A, 10V	2.35V @ 25μA	15 nC @ 10 V	±20V	-55°C ~ 150°C(TJ)	Surface Mount	8-PQFN(3.3x3.3), Power33	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFHM9331TRPBF INFINEON	531			預計 11個工作天	核友型號：st75141413	Infineon Technologies	HEXFETR	P-Channel	30V	10V, 20V	11A(TA), 24A(Tc)	1543 pF @ 25 V	2.8W(Ta)	10mOhms @ 11A, 20V	2.4V @ 25μA	48 nC @ 10 V	±25V	-55°C ~ 150°C(TJ)	Surface Mount	PQFN(3x3)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFHM9331TRPBF INFINEON	2,000	22+		預計 16個工作天	核友型號：st76078891	Infineon Technologies	HEXFETR	P-Channel	30V	10V, 20V	11A(TA), 24A(Tc)	1543 pF @ 25 V	2.8W(Ta)	10mOhms @ 11A, 20V	2.4V @ 25μA	48 nC @ 10 V	±25V	-55°C ~ 150°C(TJ)	Surface Mount	PQFN(3x3)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFHS8242TRPBF INFINEON	100			預計 11個工作天	核友型號：st75141414	Infineon Technologies	HEXFETR	N-Channel	25V	4.5V, 10V	9.9A(TA), 21A(Tc)	653 pF @ 10 V	2.1W(Ta)	13mOhms @ 8.5A, 10V	2.35V @ 25μA	10.4 nC @ 10 V	±20V	-55°C ~ 150°C(TJ)	Surface Mount	6-PQFN(2x2)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFHS8342TRPBF INFINEON	5			預計 11個工作天	核友型號：st75141415	Infineon Technologies	HEXFETR	N-Channel	30V	4.5V, 10V	8.8A(TA), 19A(Tc)	600 pF @ 25 V	2.1W(Ta)	16mOhms @ 8.5A, 10V	2.35V @ 25μA	8.7 nC @ 10 V	±20V	-55°C ~ 150°C(TJ)	Surface Mount	6-PQFN(2x2)(DFN2020)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFHS9301TRPBF INFINEON	10			預計 11個工作天	核友型號：st75141416	Infineon Technologies	HEXFETR	P-Channel	30V	4.5V, 10V	6A(TA), 13A(Tc)	580 pF @ 25 V	2.1W(Ta)	37mOhms @ 7.8A, 10V	2.4V @ 25μA	13 nC @ 10 V	±20V	-55°C ~ 150°C(TJ)	Surface Mount	6-PQFN(2x2)(DFN2020)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFHS9351TRPBF INFINEON	47			預計 11個工作天	核友型號：st75141417	Infineon Technologies	HEXFETR	30 V	2.3 A	160pF @ 25V	1.4W	170mOhms @ 3.1A, 10V	2.4V @ 10μA	3.7nC @ 10V	MOSFET (Metal Oxide)	2Pチャンネル(デュアル)	Logic Level Gate	-55°C ~ 150°C(TJ)	Surface Mount	6-PQFNデュアル(2x2)
質量保證 B-1	來自供應商的訂	IRFI1310NPBF INFINEON	8			預計 11個工作天	核友型號：st75141418	Infineon Technologies	HEXFETR	N-Channel	100V	10V	24A(Tc)	1900 pF @ 25 V	56W(Tc)	36mOhms @ 13A, 10V	4V @ 250μA	120 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB Full Package	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFI3205PBF INFINEON	1,780			預計 11個工作天	核友型號：st75141419	Infineon Technologies	HEXFETR	N-Channel	55V	10V	64A(Tc)	4000 pF @ 25 V	63W(Tc)	8mOhms @ 34A, 10V	4V @ 250μA	170 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB Full Package	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFI3205PBF INFINEON	3,074	22+		預計 16個工作天	核友型號：st76078892	Infineon Technologies	HEXFETR	N-Channel	55V	10V	64A(Tc)	4000 pF @ 25 V	63W(Tc)	8mOhms @ 34A, 10V	4V @ 250μA	170 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB Full Package	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFI4019H-117PXKMA1 INFINEON	199			預計 11個工作天	核友型號：st75141420
質量保證 B-1	來自供應商的訂	IRFI4110GPBF INFINEON	5			預計 11個工作天	核友型號：st75141421	Infineon Technologies	HEXFETR	N-Channel	100V	10V	72A(Tc)	9540 pF @ 50 V	61W(Tc)	4.5mOhms @ 43A, 10V	4V @ 250μA	290 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB Full Package	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFI4212H-117P INFINEON	10			預計 11個工作天	核友型號：st75141422	Infineon Technologies	Trench Mosfet	100 V	11 A	490pF @ 50V	18W	72.5mOhms @ 6.6A, 10V	5V @ 250μA	18nC @ 10V	MOSFET (Metal Oxide)	2 Nチャンネル(デュアル)		-55°C ~ 150°C(TJ)	Through Hole	TO-220-5フルパッッケージ
質量保證 B-1	來自供應商的訂	IRFI4229PBF INFINEON	17			預計 11個工作天	核友型號：st75141423	Infineon Technologies	HEXFETR	N-Channel	250V	10V	19A(Tc)	4480 pF @ 25 V	46W(Tc)	46mOhms @ 11A, 10V	5V @ 250μA	110 nC @ 10 V	±30V	-40°C ~ 150°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFI4321PBF INFINEON	10			預計 11個工作天	核友型號：st75141424	Infineon Technologies	HEXFETR	N-Channel	150V	10V	34A(Tc)	4440 pF @ 50 V	46W(Tc)	16mOhms @ 20A, 10V	5V @ 250μA	110 nC @ 10 V	±30V	-55°C ~ 150°C(TJ)	Through Hole	TO-220AB Full Package	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFI4410ZPBF INFINEON	8			預計 11個工作天	核友型號：st75141425	Infineon Technologies	HEXFETR	N-Channel	100V	10V	43A(Tc)	4910 pF @ 50 V	47W(Tc)	9.3mOhms @ 26A, 10V	4V @ 150μA	110 nC @ 10 V	±30V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB Full Package	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFI530NPBF INFINEON	45			預計 11個工作天	核友型號：st75141426	Infineon Technologies	HEXFETR	N-Channel	100V	10V	12A(Tc)	640 pF @ 25 V	41W(Tc)	110mOhms @ 6.6A, 10V	4V @ 250μA	44 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB Full Package	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFIZ34NPBF INFINEON	77			預計 11個工作天	核友型號：st75141427	Infineon Technologies	HEXFETR	N-Channel	55V	10V	21A(Tc)	700 pF @ 25 V	37W(Tc)	40mOhms @ 11A, 10V	4V @ 250μA	34 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB Full Package	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFIZ44NPBF INFINEON	73			預計 11個工作天	核友型號：st75141428	Infineon Technologies	HEXFETR	N-Channel	55V	10V	31A(Tc)	1300 pF @ 25 V	45W(Tc)	24mOhms @ 17A, 10V	4V @ 250μA	65 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB Full Package	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFIZ48NPBF INFINEON	26			預計 11個工作天	核友型號：st75141429	Infineon Technologies	HEXFETR	N-Channel	55V	10V	40A(Tc)	1900 pF @ 25 V	54W(Tc)	16mOhms @ 22A, 10V	4V @ 250μA	89 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB Full Package	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFL014NTRPBF INFINEON	4			預計 11個工作天	核友型號：st75141430	Infineon Technologies	HEXFETR	N-Channel	55V	10V	1.9A(TA)	190 pF @ 25 V	1W(Ta)	160mOhms @ 1.9A, 10V	4V @ 250μA	11 nC @ 10 V	±20V	-55°C ~ 150°C(TJ)	Surface Mount	SOT-223	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFL014NTRPBF INFINEON	20,008	24+		預計 16個工作天	核友型號：st61363133	Infineon Technologies	HEXFETR	N-Channel	55V	10V	1.9A(TA)	190 pF @ 25 V	1W(Ta)	160mOhms @ 1.9A, 10V	4V @ 250μA	11 nC @ 10 V	±20V	-55°C ~ 150°C(TJ)	Surface Mount	SOT-223	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFL024ZTRPBF INFINEON	14,935	18+		預計 11個工作天	核友型號：st71361794	Infineon Technologies	HEXFETR	N-Channel	55V	10V	5.1A(TA)	340 pF @ 25 V	1W(Ta)	57.5mOhms @ 3.1A, 10V	4V @ 250μA	14 nC @ 10 V	±20V	-55°C ~ 150°C(TJ)	Surface Mount	SOT-223	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFL024ZTRPBF INFINEON	153			預計 11個工作天	核友型號：st75141431	Infineon Technologies	HEXFETR	N-Channel	55V	10V	5.1A(TA)	340 pF @ 25 V	1W(Ta)	57.5mOhms @ 3.1A, 10V	4V @ 250μA	14 nC @ 10 V	±20V	-55°C ~ 150°C(TJ)	Surface Mount	SOT-223	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFL024ZTRPBF INFINEON TECHNOLOGIES	2,500		MOQ : 2,500 SPQ : 1	預計 11個工作天	核友型號：st72742488	Infineon Technologies	HEXFETR	N-Channel	55V	10V	5.1A(TA)	340 pF @ 25 V	1W(Ta)	57.5mOhms @ 3.1A, 10V	4V @ 250μA	14 nC @ 10 V	±20V	-55°C ~ 150°C(TJ)	Surface Mount	SOT-223	Mosfet (Metal Oxide)