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庫存類別供應商排名	庫存所在位置	型號 / 製造商 / 其他	庫存量	生產年份/批號	最低訂貨數量 / 後續訂購數量	預定出貨日	資訊核友管理編號	Manufacturer	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Operating Temperature Range	Automotive	Mounting Type	Device Package
質量保證 B-1	來自供應商的訂	IRFH8334TRPBF INFINEON	86			預計 11個工作天	核友型號：st75141405	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	30V	4.5V, 10V	14A(TA), 44A(Tc)	1180 pF @ 10 V	3.2W(Ta), 30W(Tc)	9mOhms @ 20A, 10V	2.35V @ 25µA	15 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Surface Mount	PQFN(5x6)
質量保證 B-1	來自供應商的訂	IRFH9310TRPBF INFINEON	83			預計 11個工作天	核友型號：st75141406	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	30V	4.5V, 10V	21A(TA), 40A(Tc)	5250 pF @ 15 V	3.1W (Ta)	4.6mOhms @ 21A, 10V	2.4V @ 100µA	58 nC @ 4.5 V	±20V	-55°C ~ 150°C (TJ)		Surface Mount	PQFN(5x6)
質量保證 B-2	來自供應商的訂	IRFH9310TRPBF INFINEON	1,906	22+	MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st76438172	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	30V	4.5V, 10V	21A(TA), 40A(Tc)	5250 pF @ 15 V	3.1W (Ta)	4.6mOhms @ 21A, 10V	2.4V @ 100µA	58 nC @ 4.5 V	±20V	-55°C ~ 150°C (TJ)		Surface Mount	PQFN(5x6)
質量保證 B-1	來自供應商的訂海外位置	IRFH9310TRPBF INFINEON	11,985	25+		預計 16個工作天	End of Life 核友型號：st49404562	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	30V	4.5V, 10V	21A(TA), 40A(Tc)	5250 pF @ 15 V	3.1W (Ta)	4.6mOhms @ 21A, 10V	2.4V @ 100µA	58 nC @ 4.5 V	±20V	-55°C ~ 150°C (TJ)		Surface Mount	PQFN(5x6)
質量保證 B-1	來自供應商的訂	IRFHM3911TRPBF INFINEON	2,457			預計 11個工作天	核友型號：st75141407	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10V	3.2A(TA), 20A(Tc)	760 pF @ 50 V	2.8W(Ta), 29W(Tc)	115 mOhms @ 6.3A, 10V	4V @ 35µA	26 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Surface Mount	8-PQFN(3x3)
質量保證 B-2	來自供應商的訂	IRFHM3911TRPBF INFINEON	5,980	22/23+	MOQ : 500 SPQ : 1	預計 11個工作天	核友型號：st76467361	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10V	3.2A(TA), 20A(Tc)	760 pF @ 50 V	2.8W(Ta), 29W(Tc)	115 mOhms @ 6.3A, 10V	4V @ 35µA	26 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Surface Mount	8-PQFN(3x3)
質量保證 B-1	來自供應商的訂	IRFHM792TRPBF INFINEON	157			預計 11個工作天	核友型號：st75141408	Infineon Technologies	HEXFET®	100V	2.3A	251pF @ 25V	2.3W	195mOhms @ 2.9A, 10V	4V @ 10μA	6.3nC @ 10V	MOSFET (Metal Oxide)	2 N-Channel (Dual)		-55°C ~ 150°C (TJ)		Surface Mount	8-PQFN(3.3x3.3), Power33
質量保證 B-2	來自供應商的訂	IRFHM792TRPBF INFINEON	15,910	20+	MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st76419204	Infineon Technologies	HEXFET®	100V	2.3A	251pF @ 25V	2.3W	195mOhms @ 2.9A, 10V	4V @ 10μA	6.3nC @ 10V	MOSFET (Metal Oxide)	2 N-Channel (Dual)		-55°C ~ 150°C (TJ)		Surface Mount	8-PQFN(3.3x3.3), Power33
質量保證 B-1	來自供應商的訂	IRFHM830TRPBF INFINEON	12,000	16+		預計 11個工作天	核友型號：st71361792	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	30V	4.5V, 10V	21A(TA), 40A(Tc)	2155 pF @ 25 V	2.7W(Ta), 37W(Tc)	3.8mOhm @ 20A, 10V	2.35V @ 50µA	31 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Surface Mount	8-PQFN-Dual(3.3x3.3)
質量保證 B-1	來自供應商的訂	IRFHM830TRPBF INFINEON	6			預計 11個工作天	核友型號：st75141409	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	30V	4.5V, 10V	21A(TA), 40A(Tc)	2155 pF @ 25 V	2.7W(Ta), 37W(Tc)	3.8mOhm @ 20A, 10V	2.35V @ 50µA	31 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Surface Mount	8-PQFN-Dual(3.3x3.3)
質量保證 B-2	來自供應商的訂	IRFHM830TRPBF INFINEON	7,827	22/23+	MOQ : 2,000 SPQ : 1	預計 11個工作天	核友型號：st76396584	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	30V	4.5V, 10V	21A(TA), 40A(Tc)	2155 pF @ 25 V	2.7W(Ta), 37W(Tc)	3.8mOhm @ 20A, 10V	2.35V @ 50µA	31 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Surface Mount	8-PQFN-Dual(3.3x3.3)
質量保證 B-1	來自供應商的訂	IRFHM830TRPBF INFINEON	7,827	23+		預計 16個工作天	核友型號：st63301441	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	30V	4.5V, 10V	21A(TA), 40A(Tc)	2155 pF @ 25 V	2.7W(Ta), 37W(Tc)	3.8mOhm @ 20A, 10V	2.35V @ 50µA	31 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Surface Mount	8-PQFN-Dual(3.3x3.3)
質量保證 B-1	來自供應商的訂	IRFHM831TRPBF INFINEON	3,780	17+		預計 11個工作天	核友型號：st71361793	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	30V	4.5V, 10V	14A(TA), 40A(Tc)	1050 pF @ 25 V	2.5W(Ta), 27W(Tc)	7.8mOhms @ 12A, 10V	2.35V @ 25µA	16 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Surface Mount	PQFN (3x3)
質量保證 B-1	來自供應商的訂	IRFHM831TRPBF INFINEON	3			預計 11個工作天	核友型號：st75141410	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	30V	4.5V, 10V	14A(TA), 40A(Tc)	1050 pF @ 25 V	2.5W(Ta), 27W(Tc)	7.8mOhms @ 12A, 10V	2.35V @ 25µA	16 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Surface Mount	PQFN (3x3)
質量保證 B-1	來自供應商的訂	IRFHM8329TRPBF INFINEON	50			預計 11個工作天	核友型號：st75141411	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	30V	4.5V, 10V	16A(TA), 57A(Tc)	1710 pF @ 10 V	2.6W(Ta), 33W(Tc)	6.1mOhm @ 20A, 10V	2.2V @ 25µA	26 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Surface Mount	PQFN (3x3)
質量保證 B-1	來自供應商的訂	IRFHM8330TRPBF INFINEON	100			預計 11個工作天	核友型號：st75141412	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	30V	4.5V, 10V	16A (Ta)	1450 pF @ 25 V	2.7W(Ta), 33W(Tc)	6.6mOhms @ 20A, 10V	2.35V @ 25µA	20 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Surface Mount	8-PQFN(3.3x3.3), Power33
質量保證 B-1	來自供應商的訂	IRFHM8334TRPBF INFINEON	8,950	21+22+		預計 11個工作天	核友型號：st70448935	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	30V	4.5V, 10V	13A (Ta)	1180 pF @ 10 V	2.7W(Ta), 28W(Tc)	9mOhms @ 20A, 10V	2.35V @ 25µA	15 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Surface Mount	8-PQFN(3.3x3.3), Power33
質量保證 B-1	來自供應商的訂	IRFHM9331TRPBF INFINEON	2,000	22+		預計 16個工作天	核友型號：st76078891	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	30V	10V, 20V	11A (Ta), 24A (Tc)	1543 pF @ 25 V	2.8W (Ta)	10mOhm @ 11A, 20V	2.4V @ 25µA	48 nC @ 10 V	±25V	-55°C ~ 150°C (TJ)		Surface Mount	PQFN (3x3)
質量保證 B-1	來自供應商的訂	IRFHM9331TRPBF INFINEON	531			預計 11個工作天	核友型號：st75141413	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	30V	10V, 20V	11A (Ta), 24A (Tc)	1543 pF @ 25 V	2.8W (Ta)	10mOhm @ 11A, 20V	2.4V @ 25µA	48 nC @ 10 V	±25V	-55°C ~ 150°C (TJ)		Surface Mount	PQFN (3x3)
質量保證 B-2	來自供應商的訂	IRFHM9331TRPBF INFINEON	18,410	22+	MOQ : 2,000 SPQ : 1	預計 11個工作天	核友型號：st76395607	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	30V	10V, 20V	11A (Ta), 24A (Tc)	1543 pF @ 25 V	2.8W (Ta)	10mOhm @ 11A, 20V	2.4V @ 25µA	48 nC @ 10 V	±25V	-55°C ~ 150°C (TJ)		Surface Mount	PQFN (3x3)
質量保證 B-1	來自供應商的訂	IRFHS8242TRPBF INFINEON	100			預計 11個工作天	核友型號：st75141414	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	25V	4.5V, 10V	9.9A(TA), 21A(Tc)	653 pF @ 10 V	2.1W (Ta)	13mOhms @ 8.5A, 10V	2.35V @ 25µA	10.4 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Surface Mount	6-PQFN (2x2) (DFN2020)
質量保證 B-1	來自供應商的訂	IRFHS8342TRPBF INFINEON	5			預計 11個工作天	核友型號：st75141415	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	30V	4.5V, 10V	8.8A(TA), 19A(Tc)	600 pF @ 25 V	2.1W (Ta)	16mOhms @ 8.5A, 10V	2.35V @ 25µA	8.7 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Surface Mount	6-PQFN (2x2) (DFN2020)
質量保證 B-2	來自供應商的訂	IRFHS9301TRPBF INFINEON	8,741	20+	MOQ : 2,500 SPQ : 1	預計 11個工作天	核友型號：st76375950	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	30V	4.5V, 10V	6A(TA), 13A(Tc)	580 pF @ 25 V	2.1W (Ta)	37mOhms @ 7.8A, 10V	2.4V @ 25µA	13 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Surface Mount	6-PQFN (2x2) (DFN2020)
質量保證 B-1	來自供應商的訂	IRFHS9301TRPBF INFINEON	10			預計 11個工作天	核友型號：st75141416	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	30V	4.5V, 10V	6A(TA), 13A(Tc)	580 pF @ 25 V	2.1W (Ta)	37mOhms @ 7.8A, 10V	2.4V @ 25µA	13 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Surface Mount	6-PQFN (2x2) (DFN2020)
質量保證 B-1	來自供應商的訂	IRFHS9351TRPBF INFINEON	47			預計 11個工作天	核友型號：st75141417	Infineon Technologies	HEXFET®	30V	2.3A	160pF @ 25V	1.4W	170mOhms @ 3.1A, 10V	2.4V @ 10μA	3.7nC @ 10V	MOSFET (Metal Oxide)	2 P-Channel (Dual)	Logic Level Gate	-55°C ~ 150°C (TJ)		Surface Mount	6-PQFN Dual (2x2)
質量保證 B-1	來自供應商的訂	IRFI1310NPBF INFINEON	8			預計 11個工作天	核友型號：st75141418	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10V	24A (Tc)	1900 pF @ 25 V	56W (Tc)	36mOhms @ 13A, 10V	4V @ 250µA	120 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB Full Package
質量保證 B-2	來自供應商的訂	IRFI1310NPBF INFINEON	5,176	22/23+	MOQ : 250 SPQ : 1	預計 11個工作天	核友型號：st76507873	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10V	24A (Tc)	1900 pF @ 25 V	56W (Tc)	36mOhms @ 13A, 10V	4V @ 250µA	120 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB Full Package
質量保證 B-1	來自供應商的訂	IRFI3205PBF INFINEON	3,074	22+		預計 16個工作天	核友型號：st76078892	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	10V	64A (Tc)	4000 pF @ 25 V	63W(Tc)	8mOhms @ 34A, 10V	4V @ 250µA	170 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB Full Package
質量保證 B-1	來自供應商的訂	IRFI3205PBF INFINEON	1,780			預計 11個工作天	核友型號：st75141419	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	10V	64A (Tc)	4000 pF @ 25 V	63W(Tc)	8mOhms @ 34A, 10V	4V @ 250µA	170 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB Full Package
質量保證 B-2	來自供應商的訂	IRFI3205PBF INFINEON	3,922	20+	MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st76456584	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	10V	64A (Tc)	4000 pF @ 25 V	63W(Tc)	8mOhms @ 34A, 10V	4V @ 250µA	170 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB Full Package
質量保證 B-1	來自供應商的訂	IRFI4019H-117PXKMA1 INFINEON	199			預計 11個工作天	核友型號：st75141420
質量保證 B-1	來自供應商的訂	IRFI4110GPBF INFINEON	5			預計 11個工作天	核友型號：st75141421	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10V	72A(Tc)	9540 pF @ 50 V	150°C (TJ)	4.5mOhms @ 43A, 10V	4V @ 250µA	290 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB Full Package
質量保證 B-1	來自供應商的訂	IRFI4212H-117P INFINEON	10			預計 11個工作天	核友型號：st75141422	Infineon Technologies	Trench Mosfet	100V	11A	490pF @ 50V	18W	72.5mOhm @ 6.6A, 10V	5V @ 250μA	18nC @ 10V	MOSFET (Metal Oxide)	2 N-Channel (Dual)		-55°C ~ 150°C (TJ)		Through Hole	TO-220-5 Full-Pak
質量保證 B-1	來自供應商的訂	IRFI4229PBF INFINEON	17			預計 11個工作天	核友型號：st75141423	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	250V	10V	19A (Tc)	4480 pF @ 25 V	150°C (TJ)	46mOhms @ 11A, 10V	5V @ 250µA	110 nC @ 10 V	±30V	-40°C ~ 150°C (TJ)		Through Hole	TO-220AB
質量保證 B-2	來自供應商的訂	IRFI4321PBF INFINEON	5,000	21+	MOQ : 500 SPQ : 1	預計 11個工作天	核友型號：st76488672	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	150V	10V	34A (Tc)	4440 pF @ 50 V	150°C (TJ)	16mOhm @ 20A, 10V	5V @ 250µA	110 nC @ 10 V	±30V	-55°C ~ 150°C (TJ)		Through Hole	TO-220AB Full Package
質量保證 B-1	來自供應商的訂	IRFI4321PBF INFINEON	10			預計 11個工作天	核友型號：st75141424	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	150V	10V	34A (Tc)	4440 pF @ 50 V	150°C (TJ)	16mOhm @ 20A, 10V	5V @ 250µA	110 nC @ 10 V	±30V	-55°C ~ 150°C (TJ)		Through Hole	TO-220AB Full Package
質量保證 B-1	來自供應商的訂	IRFI4410ZPBF INFINEON	8			預計 11個工作天	核友型號：st75141425	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10V	43A (Tc)	4910 pF @ 50 V	47W(Tc)	9.3mOhms @ 26A, 10V	4V @ 150µA	110 nC @ 10 V	±30V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB Full Package
質量保證 B-1	來自供應商的訂	IRFI530NPBF INFINEON	45			預計 11個工作天	核友型號：st75141426	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10V	12A (Tc)	640 pF @ 25 V	41W(Tc)	110mOhms @ 6.6A, 10V	4V @ 250µA	44 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB Full Package
質量保證 B-2	來自供應商的訂	IRFI540NPBF INFINEON	3,788	22/25+	MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st76424779	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10V	20A (Tc)	1400 pF @ 25 V	150°C (TJ)	52mOhms @ 11A, 10V	4V @ 250µA	94 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB Full Package
質量保證 B-1	來自供應商的訂	IRFI840G INTERNATIONAL RECTIFIER	550	NA		預計 7個工作天	核友型號：st68903978	INTERNATIONAL RECTIFIER		N-Channel	MOSFET (Metal Oxide)	500V	10V	4.6A (Tc)	1300 pF @ 25 V	150°C (TJ)	850mOhms @ 2.8A, 10V	4V @ 250µA	67 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Through Hole	TO-220-3
質量保證 B-1	來自供應商的訂	IRFIZ34NPBF INFINEON	77			預計 11個工作天	核友型號：st75141427	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	10V	21A (Tc)	700 pF @ 25 V	37W(Tc)	40mOhms @ 11A, 10V	4V @ 250µA	34 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB Full Package
質量保證 B-2	來自供應商的訂	IRFIZ44NPBF INFINEON	4,541	22/23+	MOQ : 250 SPQ : 1	預計 11個工作天	核友型號：st76509205	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	10V	31A (Tc)	1300 pF @ 25 V	45W (Tc)	24mOhms @ 17A, 10V	4V @ 250µA	65 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB Full Package
質量保證 B-1	來自供應商的訂	IRFIZ44NPBF INFINEON	73			預計 11個工作天	核友型號：st75141428	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	10V	31A (Tc)	1300 pF @ 25 V	45W (Tc)	24mOhms @ 17A, 10V	4V @ 250µA	65 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB Full Package
質量保證 B-2	來自供應商的訂	IRFIZ48NPBF INFINEON	1,762	19+	MOQ : 250 SPQ : 1	預計 11個工作天	核友型號：st76501771	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	10V	40A (Tc)	1900 pF @ 25 V	150°C (TJ)	16mOhms @ 22A, 10V	4V @ 250µA	89 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB Full Package
質量保證 B-1	來自供應商的訂	IRFIZ48NPBF INFINEON	26			預計 11個工作天	核友型號：st75141429	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	10V	40A (Tc)	1900 pF @ 25 V	150°C (TJ)	16mOhms @ 22A, 10V	4V @ 250µA	89 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB Full Package
質量保證 B-1	來自供應商的訂	IRFL014NTRPBF INFINEON	4			預計 11個工作天	核友型號：st75141430	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	10V	1.9A (Ta)	190 pF @ 25 V	1W (Ta)	160mOhms @ 1.9A, 10V	4V @ 250µA	11 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Surface Mount	SOT-223
質量保證 B-1	來自供應商的訂	IRFL014NTRPBF INFINEON	20,008	24+		預計 16個工作天	核友型號：st61363133	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	10V	1.9A (Ta)	190 pF @ 25 V	1W (Ta)	160mOhms @ 1.9A, 10V	4V @ 250µA	11 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Surface Mount	SOT-223
質量保證 B-2	來自供應商的訂	IRFL014NTRPBF INFINEON	2,500	22/23+	MOQ : 2,500 SPQ : 1	預計 11個工作天	核友型號：st76385252	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	10V	1.9A (Ta)	190 pF @ 25 V	1W (Ta)	160mOhms @ 1.9A, 10V	4V @ 250µA	11 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Surface Mount	SOT-223
質量保證 B-2	來自供應商的訂	IRFL014NTRPBF INFINEON TECHNOLOGIES	52,500	N/A	MOQ : 2,500 SPQ : 2,500	預計 16個工作天	核友型號：st76681726	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	10V	1.9A (Ta)	190 pF @ 25 V	1W (Ta)	160mOhms @ 1.9A, 10V	4V @ 250µA	11 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Surface Mount	SOT-223
質量保證 B-1	來自供應商的訂	IRFL024ZTRPBF INFINEON	153			預計 11個工作天	核友型號：st75141431	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	10V	5.1A(TA)	340 pF @ 25 V	1W (Ta)	57.5mOhms @ 3.1A, 10V	4V @ 250µA	14 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Surface Mount	SOT-223