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庫存類別供應商排名	庫存所在位置	型號 / 製造商 / 其他	庫存量	生產年份/批號	最低訂貨數量 / 後續訂購數量	預定出貨日	資訊核友管理編號	Manufacturer	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Operating Temperature Range	Mounting Type	Device Package
質量保證 B-1	來自供應商的訂	IRFB3004PBF INFINEON	10			預計 11個工作天	核友型號：st75141320	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	40V	10V	195A(Tc)	9200 pF @ 25 V	380W(Tc)	1.75mOhms @ 195A, 10V	4V @ 250µA	240 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRFB3006GPBF INFINEON	10			預計 11個工作天	核友型號：st75141321	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	60V	10V	195A(Tc)	8970 pF @ 50 V	375W(Tc)	2.5mOhms @ 170A, 10V	4V @ 250µA	300 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRFB3006PBF INFINEON	7			預計 11個工作天	核友型號：st75141322	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	60V	10V	195A(Tc)	8970 pF @ 50 V	375W(Tc)	2.5mOhms @ 170A, 10V	4V @ 250µA	300 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-2	來自供應商的訂	IRFB3077PBF INFINEON	10,379	22/23+	MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st76450810	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	75V	10V	120A (Tc)	9400 pF @ 50 V	-55°C ~ 150°C (TJ)	3.3mOhms @ 75A, 10V	4V @ 250µA	220 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRFB3077PBF INFINEON	500			預計 11個工作天	核友型號：st75141323	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	75V	10V	120A (Tc)	9400 pF @ 50 V	-55°C ~ 150°C (TJ)	3.3mOhms @ 75A, 10V	4V @ 250µA	220 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRFB3077PBF INFINEON	12,600	20+		預計 11個工作天	核友型號：st71361775	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	75V	10V	120A (Tc)	9400 pF @ 50 V	-55°C ~ 150°C (TJ)	3.3mOhms @ 75A, 10V	4V @ 250µA	220 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂海外位置	IRFB3077PBF INFINEON	9,690	23+		預計 16個工作天	核友型號：st49404490	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	75V	10V	120A (Tc)	9400 pF @ 50 V	-55°C ~ 150°C (TJ)	3.3mOhms @ 75A, 10V	4V @ 250µA	220 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-2	來自供應商的訂	IRFB3077PBF INFINEON TECHNOLOGIES	136,000	N/A	MOQ : 1,000 SPQ : 1,000	預計 16個工作天	核友型號：st76681700	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	75V	10V	120A (Tc)	9400 pF @ 50 V	-55°C ~ 150°C (TJ)	3.3mOhms @ 75A, 10V	4V @ 250µA	220 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRFB31N20DPBF INFINEON	10			預計 11個工作天	核友型號：st75141324	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	200V	10V	31A (Tc)	2370 pF @ 25 V	3.1W(Ta), 200W(Tc)	82mOhms @ 18A, 10V	5.5V @ 250µA	107 nC @ 10 V	±30V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-2	來自供應商的訂	IRFB3206PBF INFINEON TECHNOLOGIES	53,000	N/A	MOQ : 1,000 SPQ : 1,000	預計 16個工作天	核友型號：st76681701	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	60V	10V	120A (Tc)	6540 pF @ 50 V	300W(Tc)	3mOhms @ 75A, 10V	4V @ 150µA	170 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRFB3206PBF INFINEON	2,000	20+		預計 11個工作天	核友型號：st71361776	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	60V	10V	120A (Tc)	6540 pF @ 50 V	300W(Tc)	3mOhms @ 75A, 10V	4V @ 150µA	170 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRFB3206PBF INFINEON	10			預計 11個工作天	核友型號：st75141325	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	60V	10V	120A (Tc)	6540 pF @ 50 V	300W(Tc)	3mOhms @ 75A, 10V	4V @ 150µA	170 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-2	來自供應商的訂	IRFB3206PBF INFINEON	3,000	22+	MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st76419233	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	60V	10V	120A (Tc)	6540 pF @ 50 V	300W(Tc)	3mOhms @ 75A, 10V	4V @ 150µA	170 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRFB3207PBF INFINEON	10			預計 11個工作天	核友型號：st75141326	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	75V	10V	170A(Tc)	7600 pF @ 50 V	330W(Tc)	4.5mOhms @ 75A, 10V	4V @ 250µA	260 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRFB3207PBF INFINEON	14,200	20+		預計 11個工作天	核友型號：st71361777	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	75V	10V	170A(Tc)	7600 pF @ 50 V	330W(Tc)	4.5mOhms @ 75A, 10V	4V @ 250µA	260 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-2	來自供應商的訂	IRFB3207PBF INFINEON TECHNOLOGIES	5,000	N/A	MOQ : 300 SPQ : 150	預計 16個工作天	核友型號：st76681702	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	75V	10V	170A(Tc)	7600 pF @ 50 V	330W(Tc)	4.5mOhms @ 75A, 10V	4V @ 250µA	260 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRFB3207ZPBF INFINEON	10			預計 11個工作天	核友型號：st75141327	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	75V	10V	120A (Tc)	6920 pF @ 50 V	300W(Tc)	4.1mOhms @ 75A, 10V	4V @ 150µA	170 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-2	來自供應商的訂	IRFB3207ZPBF INFINEON	1,000	22+	MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st76442536	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	75V	10V	120A (Tc)	6920 pF @ 50 V	300W(Tc)	4.1mOhms @ 75A, 10V	4V @ 150µA	170 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRFB3207ZPBF INFINEON	2,800	22+		預計 11個工作天	核友型號：st76831385	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	75V	10V	120A (Tc)	6920 pF @ 50 V	300W(Tc)	4.1mOhms @ 75A, 10V	4V @ 150µA	170 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRFB3306GPBF INFINEON	50			預計 11個工作天	核友型號：st75141328	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	60V	10V	120A (Tc)	4520 pF @ 50 V	230W(Tc)	4.2mOhms @ 75A, 10V	4V @ 150µA	120 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRFB3306PBF INFINEON	330			預計 11個工作天	核友型號：st75141329	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	60V	10V	120A (Tc)	4520 pF @ 50 V	230W(Tc)	4.2mOhms @ 75A, 10V	4V @ 150µA	120 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-2	來自供應商的訂	IRFB3306PBF INFINEON	539	22+	MOQ : 539 SPQ : 1	預計 11個工作天	核友型號：st76425311	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	60V	10V	120A (Tc)	4520 pF @ 50 V	230W(Tc)	4.2mOhms @ 75A, 10V	4V @ 150µA	120 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRFB3306PBF INFINEON	20,000	21+		預計 11個工作天	核友型號：st71361778	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	60V	10V	120A (Tc)	4520 pF @ 50 V	230W(Tc)	4.2mOhms @ 75A, 10V	4V @ 150µA	120 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-2	來自供應商的訂	IRFB3307PBF INFINEON TECHNOLOGIES	3,000	N/A	MOQ : 300 SPQ : 150	預計 16個工作天	核友型號：st76681703	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	75V	10V	130A(Tc)	5150 pF @ 50 V	200W(Tc)	6.3mOhms @ 75A, 10V	4V @ 150µA	180 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRFB3307ZPBF INFINEON	30			預計 11個工作天	核友型號：st75141330	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	75V	10V	120A (Tc)	4750 pF @ 50 V	230W(Tc)	5.8mOhms @ 75A, 10V	4V @ 150µA	110 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-2	來自供應商的訂	IRFB3307ZPBF INFINEON	2,800	19+	MOQ : 500 SPQ : 1	預計 11個工作天	核友型號：st76477659	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	75V	10V	120A (Tc)	4750 pF @ 50 V	230W(Tc)	5.8mOhms @ 75A, 10V	4V @ 150µA	110 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRFB3407ZPBF INFINEON	22			預計 11個工作天	核友型號：st75141331	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	75V	10V	120A (Tc)	4750 pF @ 50 V	230W(Tc)	6.4mOhms @ 75A, 10V	4V @ 150µA	110 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRFB3607PBF INFINEON	1,921			預計 11個工作天	核友型號：st75141332	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	75V	10V	80A (Tc)	3070 pF @ 50 V	140W (Tc)	9mOhms @ 46A, 10V	4V @ 100µA	84 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRFB3607PBF INFINEON	1,000	2504+		預計 11個工作天	核友型號：st76085053	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	75V	10V	80A (Tc)	3070 pF @ 50 V	140W (Tc)	9mOhms @ 46A, 10V	4V @ 100µA	84 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRFB3607PBF INFINEON	3,136	22+		預計 16個工作天	核友型號：st73655164	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	75V	10V	80A (Tc)	3070 pF @ 50 V	140W (Tc)	9mOhms @ 46A, 10V	4V @ 100µA	84 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-2	來自供應商的訂	IRFB3607PBF INFINEON	478	22+	MOQ : 478 SPQ : 1	預計 11個工作天	核友型號：st76386654	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	75V	10V	80A (Tc)	3070 pF @ 50 V	140W (Tc)	9mOhms @ 46A, 10V	4V @ 100µA	84 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-2	來自供應商的訂	IRFB3607PBF INFINEON TECHNOLOGIES	22,000	N/A	MOQ : 1,000 SPQ : 1,000	預計 16個工作天	核友型號：st76681704	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	75V	10V	80A (Tc)	3070 pF @ 50 V	140W (Tc)	9mOhms @ 46A, 10V	4V @ 100µA	84 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRFB3806PBF INFINEON	49			預計 11個工作天	核友型號：st75141333	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	60V	10V	43A (Tc)	1150 pF @ 50 V	71W (Tc)	15.8mOhm @ 25A, 10V	4V @ 50µA	30 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-2	來自供應商的訂	IRFB38N20DPBF INFINEON TECHNOLOGIES	122,200	N/A	MOQ : 1,000 SPQ : 1,000	預計 16個工作天	核友型號：st76681705	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	200V	10V	43A (Tc)	2900 pF @ 25 V	3.8W(Ta), 300W(Tc)	54mOhms @ 26A, 10V	5V @ 250µA	91 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRFB38N20DPBF INFINEON	500	2435+		預計 11個工作天	核友型號：st76085054	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	200V	10V	43A (Tc)	2900 pF @ 25 V	3.8W(Ta), 300W(Tc)	54mOhms @ 26A, 10V	5V @ 250µA	91 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-2	來自供應商的訂	IRFB38N20DPBF INFINEON	5,000	22/23+	MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st76461358	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	200V	10V	43A (Tc)	2900 pF @ 25 V	3.8W(Ta), 300W(Tc)	54mOhms @ 26A, 10V	5V @ 250µA	91 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRFB4019PBF INFINEON	1,808	22+		預計 16個工作天	核友型號：st76078882	Infineon Technologies		N-Channel	MOSFET (Metal Oxide)	150V	10V	17A (Tc)	800 pF @ 50 V	80W(Tc)	95mOhms @ 10A, 10V	4.9V @ 50µA	20 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRFB4019PBF INFINEON	10			預計 11個工作天	核友型號：st75141334	Infineon Technologies		N-Channel	MOSFET (Metal Oxide)	150V	10V	17A (Tc)	800 pF @ 50 V	80W(Tc)	95mOhms @ 10A, 10V	4.9V @ 50µA	20 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-2	來自供應商的訂	IRFB4020PBF INFINEON TECHNOLOGIES	39,000	N/A	MOQ : 1,000 SPQ : 1,000	預計 16個工作天	核友型號：st76681706	Infineon Technologies		N-Channel	MOSFET (Metal Oxide)	200V	10V	18A (Tc)	1200 pF @ 50 V	150°C (TJ)	100mOhms @ 11A, 10V	4.9V @ 100µA	29 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-2	來自供應商的訂	IRFB4020PBF INFINEON	9,957	22/23+	MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st76374991	Infineon Technologies		N-Channel	MOSFET (Metal Oxide)	200V	10V	18A (Tc)	1200 pF @ 50 V	150°C (TJ)	100mOhms @ 11A, 10V	4.9V @ 100µA	29 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRFB4020PBF INFINEON	10			預計 11個工作天	核友型號：st75141335	Infineon Technologies		N-Channel	MOSFET (Metal Oxide)	200V	10V	18A (Tc)	1200 pF @ 50 V	150°C (TJ)	100mOhms @ 11A, 10V	4.9V @ 100µA	29 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRFB4020PbF INFINEON	1,000			預計 8個工作天	核友型號：st66225770	Infineon Technologies
質量保證 B-2	來自供應商的訂	IRFB4110PBF INFINEON TECHNOLOGIES	150	N/A	MOQ : 150 SPQ : 150	預計 16個工作天	核友型號：st76681707	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10V	120A (Tc)	9620 pF @ 50 V	-55°C ~ 150°C (TJ)	4.5mOhms @ 75A, 10V	4V @ 250µA	210 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRFB4110PBF INFINEON	500	25+		預計 11個工作天	核友型號：st75029065	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10V	120A (Tc)	9620 pF @ 50 V	-55°C ~ 150°C (TJ)	4.5mOhms @ 75A, 10V	4V @ 250µA	210 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRFB4110PBF INFINEON	25			預計 11個工作天	核友型號：st75141336	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10V	120A (Tc)	9620 pF @ 50 V	-55°C ~ 150°C (TJ)	4.5mOhms @ 75A, 10V	4V @ 250µA	210 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRFB4110PBF INFINEON	480	25+		預計 11個工作天	核友型號：st76832022	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10V	120A (Tc)	9620 pF @ 50 V	-55°C ~ 150°C (TJ)	4.5mOhms @ 75A, 10V	4V @ 250µA	210 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂海外位置	IRFB4110PBF INFINEON	68,000	24+		預計 16個工作天	End of Life 核友型號：st49404502	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10V	120A (Tc)	9620 pF @ 50 V	-55°C ~ 150°C (TJ)	4.5mOhms @ 75A, 10V	4V @ 250µA	210 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRFB4115GPBF INFINEON	5			預計 11個工作天	核友型號：st75141337	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	150V	10V	104A(Tc)	5270 pF @ 50 V	380W(Tc)	11mOhms @ 62A, 10V	5V @ 250µA	120 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-2	來自供應商的訂	IRFB4115PBF INFINEON TECHNOLOGIES	28,200	N/A	MOQ : 1,000 SPQ : 1,000	預計 16個工作天	核友型號：st76681708	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	150V	10V	104A(Tc)	5270 pF @ 50 V	380W(Tc)	11mOhms @ 62A, 10V	5V @ 250µA	120 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRFB4115PBF INFINEON	5,000	21+		預計 11個工作天	核友型號：st71361779	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	150V	10V	104A(Tc)	5270 pF @ 50 V	380W(Tc)	11mOhms @ 62A, 10V	5V @ 250µA	120 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB