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核友管理編號		 Manufacturer Series FET Type Technology Drain to Source Voltage (Vdss) Drive Voltage (Max Rds On, Min Rds On) Current - Continuous Drain (Id) @ 25°C Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Operating Temperature Range Applications Automotive Mounting Type Device Package FET Feature
質量保證
B-1 		來自供應商的訂
海外位置

IRF3205PBF

IRF3205PBF
INFINEON

50,000 22+  

預計 16個工作天

核友型號：st49404319

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 55V 10V 110A(Tc) 3247 pF @ 25 V 200W(Tc) 8mOhms @ 62A, 10V 4V @ 250µA 146 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
質量保證
B-1 		來自供應商的訂

IRF3205PBF

IRF3205PBF
INFINEON

24,000 22+  

預計 11個工作天

核友型號：st75024369

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 55V 10V 110A(Tc) 3247 pF @ 25 V 200W(Tc) 8mOhms @ 62A, 10V 4V @ 250µA 146 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
質量保證
B-1 		來自供應商的訂

IRF3205PBF

IRF3205PBF
INFINEON

45 2211+  

預計 4個工作天

核友型號：st74840083

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 55V 10V 110A(Tc) 3247 pF @ 25 V 200W(Tc) 8mOhms @ 62A, 10V 4V @ 250µA 146 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
質量保證
B-2 		來自供應商的訂

IRF3205PBF
INFINEON TECHNOLOGIES

25,000 N/A   MOQ : 600
SPQ : 300

預計 16個工作天

核友型號：st76681659

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 55V 10V 110A(Tc) 3247 pF @ 25 V 200W(Tc) 8mOhms @ 62A, 10V 4V @ 250µA 146 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
質量保證
B-1 		來自供應商的訂

IRF3205STRLPBF

IRF3205STRLPBF
INFINEON

340  

預計 11個工作天

核友型號：st75141163

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 55V 10V 110A(Tc) 3247 pF @ 25 V 200W(Tc) 8mOhms @ 62A, 10V 4V @ 250µA 146 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount D2PAK
質量保證
B-1 		來自供應商的訂

IRF3205STRLPBF

IRF3205STRLPBF
INFINEON

6 2451+  

預計 11個工作天

核友型號：st76085050

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 55V 10V 110A(Tc) 3247 pF @ 25 V 200W(Tc) 8mOhms @ 62A, 10V 4V @ 250µA 146 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount D2PAK
質量保證
B-1 		來自供應商的訂

IRF3205STRLPBF

IRF3205STRLPBF
INFINEON

800 22+  

預計 11個工作天

核友型號：st71361746

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 55V 10V 110A(Tc) 3247 pF @ 25 V 200W(Tc) 8mOhms @ 62A, 10V 4V @ 250µA 146 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount D2PAK
質量保證
B-2 		來自供應商的訂

IRF3205STRLPBF
INFINEON TECHNOLOGIES

4,000 N/A   MOQ : 800
SPQ : 800

預計 16個工作天

核友型號：st76681660

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 55V 10V 110A(Tc) 3247 pF @ 25 V 200W(Tc) 8mOhms @ 62A, 10V 4V @ 250µA 146 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount D2PAK
質量保證
B-1 		來自供應商的訂

IRF3205ZPBF

IRF3205ZPBF
INFINEON

4,775 22+  

預計 16個工作天

核友型號：st76078863

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 55V 10V 75A(Tc) 3450 pF @ 25 V 170W(Tc) 6.5mOhms @ 66A, 10V 4V @ 250µA 110 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
質量保證
B-2 		來自供應商的訂

IRF3205ZSTRLPBF
INFINEON TECHNOLOGIES

2,400 N/A   MOQ : 380
SPQ : 10

預計 16個工作天

核友型號：st76681661

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 55V 10V 75A(Tc) 3450 pF @ 25 V 170W(Tc) 6.5mOhms @ 66A, 10V 4V @ 250µA 110 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount D2PAK
質量保證
B-2 		來自供應商的訂

IRF3415PBF

IRF3415PBF
INFINEON

RoHS
4,000 22/23+   MOQ : 1,000
SPQ : 1

預計 11個工作天

核友型號：st76433277

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 150V 10V 43A (Tc) 2400 pF @ 25 V 200W(Tc) 42mOhms @ 22A, 10V 4V @ 250µA 200 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
質量保證
B-1 		來自供應商的訂

IRF3415PBF

IRF3415PBF
INFINEON

5  

預計 11個工作天

核友型號：st75141164

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 150V 10V 43A (Tc) 2400 pF @ 25 V 200W(Tc) 42mOhms @ 22A, 10V 4V @ 250µA 200 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
質量保證
B-2 		來自供應商的訂

IRF3415PBF
INFINEON TECHNOLOGIES

400 N/A   MOQ : 300
SPQ : 150

預計 16個工作天

核友型號：st76681662

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 150V 10V 43A (Tc) 2400 pF @ 25 V 200W(Tc) 42mOhms @ 22A, 10V 4V @ 250µA 200 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
質量保證
B-1 		來自供應商的訂

IRF3415SPBF
INFINEON

1  

預計 11個工作天

核友型號：st75141165

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 150V 10V 43A (Tc) 2400 pF @ 25 V 3.8W(Ta), 200W(Tc) 42mOhms @ 22A, 10V 4V @ 250µA 200 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount D2PAK
質量保證
B-1 		來自供應商的訂

IRF3415STRLPBF
INFINEON

6,111 22+  

預計 16個工作天

核友型號：st76078864

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 150V 10V 43A (Tc) 2400 pF @ 25 V 3.8W(Ta), 200W(Tc) 42mOhms @ 22A, 10V 4V @ 250µA 200 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount D2PAK
質量保證
B-2 		來自供應商的訂

IRF3415STRLPBF
INFINEON

RoHS
6,400 21+   MOQ : 500
SPQ : 1

預計 11個工作天

核友型號：st76477657

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 150V 10V 43A (Tc) 2400 pF @ 25 V 3.8W(Ta), 200W(Tc) 42mOhms @ 22A, 10V 4V @ 250µA 200 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount D2PAK
質量保證
B-1 		來自供應商的訂

IRF3703PBF
INFINEON

14  

預計 11個工作天

核友型號：st75141166

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 30V 7V, 10V 210A(Tc) 8250 pF @ 25 V 3.8W(Ta), 230W(Tc) 2.8mOhms @ 76A, 10V 4V @ 250µA 209 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
質量保證
B-1 		來自供應商的訂

IRF3703PBF
INFINEON

3,768 18+  

預計 11個工作天

核友型號：st71361747

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 30V 7V, 10V 210A(Tc) 8250 pF @ 25 V 3.8W(Ta), 230W(Tc) 2.8mOhms @ 76A, 10V 4V @ 250µA 209 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
質量保證
B-1 		來自供應商的訂

IRF3709STRLPBF
INFINEON

1  

預計 11個工作天

核友型號：st75141167

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 30V 4.5V, 10V 90A (Tc) 2672 pF @ 16 V 3.1W(Ta), 120W(Tc) 9mOhms @ 15A, 10V 3V @ 250µA 41 nC @ 5 V ±20V -55°C ~ 150°C (TJ) Surface Mount D2PAK
質量保證
B-1 		來自供應商的訂

IRF3709ZPBF
INFINEON

40  

預計 11個工作天

核友型號：st75141168

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 30V 4.5V, 10V 87A(Tc) 2130 pF @ 15 V 79W (Tc) 6.3mOhms @ 21A, 10V 2.25V @ 250µA 26 nC @ 4.5 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
質量保證
B-1 		來自供應商的訂

IRF3710LPBF

IRF3710LPBF
INFINEON

366  

預計 11個工作天

核友型號：st75141169

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 10V 57A(Tc) 3130 pF @ 25 V 200W(Tc) 23mOhms @ 28A, 10V 4V @ 250µA 130 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-262
質量保證
B-2 		來自供應商的訂

IRF3710PBF

IRF3710PBF
INFINEON

RoHS
90,000 22/25+   MOQ : 3,000
SPQ : 1

預計 11個工作天

核友型號：st76354859

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 10V 57A(Tc) 3130 pF @ 25 V 200W(Tc) 23mOhms @ 28A, 10V 4V @ 250µA 130 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
質量保證
B-1 		來自供應商的訂

IRF3710PBF

IRF3710PBF
INFINEON

974  

預計 11個工作天

核友型號：st75141170

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 10V 57A(Tc) 3130 pF @ 25 V 200W(Tc) 23mOhms @ 28A, 10V 4V @ 250µA 130 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
質量保證
B-2 		來自供應商的訂

IRF3710PBF
INFINEON TECHNOLOGIES

138,039 N/A   MOQ : 1,000
SPQ : 1,000

預計 16個工作天

核友型號：st76681663

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 10V 57A(Tc) 3130 pF @ 25 V 200W(Tc) 23mOhms @ 28A, 10V 4V @ 250µA 130 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
質量保證
B-1 		來自供應商的訂

IRF3710STRLPBF
INFINEON

7,200 21+  

預計 11個工作天

核友型號：st71361748

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 10V 57A(Tc) 3130 pF @ 25 V 200W(Tc) 23mOhms @ 28A, 10V 4V @ 250µA 130 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount D2PAK
質量保證
B-1 		來自供應商的訂

IRF3710STRLPBF
INFINEON

165  

預計 11個工作天

核友型號：st75141171

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 10V 57A(Tc) 3130 pF @ 25 V 200W(Tc) 23mOhms @ 28A, 10V 4V @ 250µA 130 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount D2PAK
質量保證
B-2 		來自供應商的訂

IRF3710STRLPBF
INFINEON

RoHS
20,540 22/23+   MOQ : 250
SPQ : 1

預計 11個工作天

核友型號：st76513496

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 10V 57A(Tc) 3130 pF @ 25 V 200W(Tc) 23mOhms @ 28A, 10V 4V @ 250µA 130 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount D2PAK
質量保證
B-2 		來自供應商的訂

IRF3710STRLPBF
INFINEON TECHNOLOGIES

18,400 N/A   MOQ : 800
SPQ : 800

預計 16個工作天

核友型號：st76681664

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 10V 57A(Tc) 3130 pF @ 25 V 200W(Tc) 23mOhms @ 28A, 10V 4V @ 250µA 130 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount D2PAK
質量保證
B-1 		來自供應商的訂

IRF3710ZPBF

IRF3710ZPBF
INFINEON

2  

預計 11個工作天

核友型號：st75141172

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 10V 59A(Tc) 2900 pF @ 25 V -55°C ~ 150°C (TJ) 18mOhms @ 35A, 10V 4V @ 250µA 120 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
質量保證
B-2 		來自供應商的訂

IRF3710ZPBF

IRF3710ZPBF
INFINEON

RoHS
1,920 22/23+   MOQ : 250
SPQ : 1

預計 11個工作天

核友型號：st76502383

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 10V 59A(Tc) 2900 pF @ 25 V -55°C ~ 150°C (TJ) 18mOhms @ 35A, 10V 4V @ 250µA 120 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
質量保證
B-2 		來自供應商的訂

IRF3710ZSTRLPBF
RoHS
4,000 22+   MOQ : 1,000
SPQ : 1

預計 11個工作天

核友型號：st76452052

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 10V 59A(Tc) 2900 pF @ 25 V -55°C ~ 150°C (TJ) 18mOhms @ 35A, 10V 4V @ 250µA 120 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount D2PAK
質量保證
B-1 		來自供應商的訂

IRF3710ZSTRLPBF
800 22+  

預計 11個工作天

核友型號：st75023622

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 10V 59A(Tc) 2900 pF @ 25 V -55°C ~ 150°C (TJ) 18mOhms @ 35A, 10V 4V @ 250µA 120 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount D2PAK
質量保證
B-1 		來自供應商的訂

IRF3805PBF
INFINEON

4 na  

預計 7個工作天

核友型號：st68903691

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 55V 10V 75A(Tc) 7960 pF @ 25 V 300W(Tc) 3.3mOhms @ 75A, 10V 4V @ 250µA 290 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
質量保證
B-1 		來自供應商的訂

IRF3805SPBF
INFINEON

20 NA  

預計 7個工作天

核友型號：st68903692

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 55V 10V 75A(Tc) 7960 pF @ 25 V 300W(Tc) 3.3mOhms @ 75A, 10V 4V @ 250µA 290 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount D2PAK
質量保證
B-2 		來自供應商的訂

IRF3805STRLPBF
INFINEON

RoHS
811 22/23+   MOQ : 100
SPQ : 1

預計 11個工作天

核友型號：st76547006

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 55V 10V 75A(Tc) 7960 pF @ 25 V 300W(Tc) 3.3mOhms @ 75A, 10V 4V @ 250µA 290 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount D2PAK
質量保證
B-1 		來自供應商的訂

IRF3805STRLPBF
INFINEON

1  

預計 11個工作天

核友型號：st75141173

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 55V 10V 75A(Tc) 7960 pF @ 25 V 300W(Tc) 3.3mOhms @ 75A, 10V 4V @ 250µA 290 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount D2PAK
質量保證
B-1 		來自供應商的訂

IRF3808PBF

IRF3808PBF
INFINEON

25  

預計 11個工作天

核友型號：st75141174

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 75V 10V 140A(Tc) 5310 pF @ 25 V 330W(Tc) 7mOhms @ 82A, 10V 4V @ 250µA 220 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
質量保證
B-1 		來自供應商的訂

IRF3808PBF

IRF3808PBF
INFINEON

662 20+  

預計 11個工作天

核友型號：st71361749

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 75V 10V 140A(Tc) 5310 pF @ 25 V 330W(Tc) 7mOhms @ 82A, 10V 4V @ 250µA 220 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
質量保證
B-2 		來自供應商的訂

IRF3808PBF

IRF3808PBF
INFINEON

RoHS
9,000 21+   MOQ : 1,000
SPQ : 1

預計 11個工作天

核友型號：st76446141

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 75V 10V 140A(Tc) 5310 pF @ 25 V 330W(Tc) 7mOhms @ 82A, 10V 4V @ 250µA 220 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
質量保證
B-1 		來自供應商的訂

IRF3808SPBF
INFINEON

6  

預計 11個工作天

核友型號：st75141175

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 75V 10V 106A(Tc) 5310 pF @ 25 V 200W(Tc) 7mOhms @ 82A, 10V 4V @ 250µA 220 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount D2PAK
質量保證
B-2 		來自供應商的訂

IRF3808STRLPBF

IRF3808STRLPBF
INFINEON

RoHS
1,600 21+   MOQ : 500
SPQ : 1

預計 11個工作天

核友型號：st76497486

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 75V 10V 106A(Tc) 5310 pF @ 25 V 200W(Tc) 7mOhms @ 82A, 10V 4V @ 250µA 220 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount D2PAK
質量保證
B-1 		來自供應商的訂

IRF40B207
INFINEON

740  

預計 11個工作天

核友型號：st75141176

Infineon Technologies HEXFET®, StrongIRFET™ N-Channel MOSFET (Metal Oxide) 40V 6V, 10V 95A (Tc) 2110 pF @ 25 V 150°C (TJ) 4.5mOhms @ 57A, 10V 3.9V @ 50µA 68 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
質量保證
B-1 		來自供應商的訂

IRF40R207

IRF40R207
INFINEON

500  

預計 11個工作天

核友型號：st75141177

Infineon Technologies HEXFET®, StrongIRFET™ N-Channel MOSFET (Metal Oxide) 40V 6V, 10V 56A (Tc) 2110 pF @ 25 V 150°C (TJ) 5.1mOhms @ 55A, 10V 3.9V @ 50µA 68 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount PG-TO252-3
質量保證
B-1 		來自供應商的訂

IRF4104PBF

IRF4104PBF
INFINEON

5  

預計 11個工作天

核友型號：st75141178

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 40V 10V 75A(Tc) 3000 pF @ 25 V 140W (Tc) 5.5mOhms @ 75A, 10V 4V @ 250µA 100 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
質量保證
B-1 		來自供應商的訂
海外位置

IRF4104PBF

IRF4104PBF
INFINEON

12,907 22+  

預計 16個工作天

End of Life 核友型號：st49404337

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 40V 10V 75A(Tc) 3000 pF @ 25 V 140W (Tc) 5.5mOhms @ 75A, 10V 4V @ 250µA 100 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
質量保證
B-1 		來自供應商的訂

IRF4104SPBF
INFINEON

28  

預計 11個工作天

核友型號：st75141179

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 40V 10V 75A(Tc) 3000 pF @ 25 V 140W (Tc) 5.5mOhms @ 75A, 10V 4V @ 250µA 100 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount D2PAK
質量保證
B-2 		來自供應商的訂

IRF4104SPBF
INFINEON

RoHS
8,000 21+   MOQ : 500
SPQ : 1

預計 11個工作天

核友型號：st76474164

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 40V 10V 75A(Tc) 3000 pF @ 25 V 140W (Tc) 5.5mOhms @ 75A, 10V 4V @ 250µA 100 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount D2PAK
質量保證
B-1 		來自供應商的訂

IRF4905LPBF

IRF4905LPBF
INFINEON

44  

預計 11個工作天

核友型號：st75141180

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 55V 10V 42A (Tc) 3500 pF @ 25 V 170W(Tc) 20mOhms @ 42A, 10V 4V @ 250µA 180 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Through Hole TO-262
質量保證
B-1 		來自供應商的訂

IRF4905LPBF

IRF4905LPBF
INFINEON

500 2150  

預計 7個工作天

核友型號：st68903698

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 55V 10V 42A (Tc) 3500 pF @ 25 V 170W(Tc) 20mOhms @ 42A, 10V 4V @ 250µA 180 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Through Hole TO-262
質量保證
B-2 		來自供應商的訂

IRF4905PBF
INFINEON TECHNOLOGIES

2,600 N/A   MOQ : 500
SPQ : 250

預計 16個工作天

核友型號：st76681665

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 55V 10V 74A (Tc) 3400 pF @ 25 V 200W(Tc) 20mOhms @ 38A, 10V 4V @ 250µA 180 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB

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