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庫存類別供應商排名	庫存所在位置	型號 / 製造商 / 其他	庫存量	生產年份/批號	最低訂貨數量 / 後續訂購數量	預定出貨日	資訊核友管理編號	Manufacturer	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Operating Temperature Range	Mounting Type	Device Package
質量保證 B-2	來自供應商的訂	IRF540NSTRLPBF INFINEON	8,000	22+	MOQ : 2,000 SPQ : 1	預計 11個工作天	核友型號：st76386650	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10V	33A (Tc)	1960 pF @ 25 V	130W (Tc)	44mOhm @ 16A, 10V	4V @ 250µA	71 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂	IRF540PBF VISHAY	4	11+		預計 4個工作天	核友型號：st74845042	VISHAY		N-Channel	MOSFET (Metal Oxide)	100V	10V	28A (Tc)	1700 pF @ 25 V	-55°C ~ 175°C (TJ)	77mOhms @ 17A, 10V	4V @ 250µA	72 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF540PBF VISHAY	18	YG1K		預計 7個工作天	核友型號：st68903742	VISHAY		N-Channel	MOSFET (Metal Oxide)	100V	10V	28A (Tc)	1700 pF @ 25 V	-55°C ~ 175°C (TJ)	77mOhms @ 17A, 10V	4V @ 250µA	72 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF540ZPBF INFINEON	13			預計 11個工作天	核友型號：st75141194	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10V	36A (Tc)	1770 pF @ 25 V	92W (Tc)	26.5mOhm @ 22A, 10V	4V @ 250µA	63 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF540ZPBF INFINEON	38	1844+		預計 4個工作天	核友型號：st74840127	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10V	36A (Tc)	1770 pF @ 25 V	92W (Tc)	26.5mOhm @ 22A, 10V	4V @ 250µA	63 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-2	來自供應商的訂	IRF5801TRPBF INFINEON	6,000	21+	MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st76400938	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	200V	10V	600mA (Ta)	88 pF @ 25 V	2W (Ta)	2.2Ohms @ 360mA, 10V	5.5V @ 250µA	3.9 nC @ 10 V	±30V	-55°C ~ 150°C (TJ)	Surface Mount	Micro6?(TSOP-6)
質量保證	來自供應商的訂	IRF5801TRPBF INFINEON	14,640	23+		預計 16個工作天	核友型號：st60358364	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	200V	10V	600mA (Ta)	88 pF @ 25 V	2W (Ta)	2.2Ohms @ 360mA, 10V	5.5V @ 250µA	3.9 nC @ 10 V	±30V	-55°C ~ 150°C (TJ)	Surface Mount	Micro6?(TSOP-6)
質量保證 B-2	來自供應商的訂	IRF5802TRPBF INFINEON	1,000	22/23+	MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st76369599	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	150V	10V	900mA (Ta)	88 pF @ 25 V	2W (Ta)	1.2Ohms @ 540mA, 10V	5.5V @ 250µA	6.8 nC @ 10 V	±30V	-55°C ~ 150°C (TJ)	Surface Mount	Micro6?(TSOP-6)
質量保證 B-1	來自供應商的訂	IRF5802TRPBF INFINEON	169			預計 11個工作天	核友型號：st75141195	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	150V	10V	900mA (Ta)	88 pF @ 25 V	2W (Ta)	1.2Ohms @ 540mA, 10V	5.5V @ 250µA	6.8 nC @ 10 V	±30V	-55°C ~ 150°C (TJ)	Surface Mount	Micro6?(TSOP-6)
質量保證 B-1	來自供應商的訂海外位置	IRF5802TRPBF INFINEON	10,500	22+		預計 16個工作天	核友型號：st49404354	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	150V	10V	900mA (Ta)	88 pF @ 25 V	2W (Ta)	1.2Ohms @ 540mA, 10V	5.5V @ 250µA	6.8 nC @ 10 V	±30V	-55°C ~ 150°C (TJ)	Surface Mount	Micro6?(TSOP-6)
質量保證 B-2	來自供應商的訂	IRF5802TRPBF INFINEON TECHNOLOGIES	9,000	N/A	MOQ : 3,000 SPQ : 3,000	預計 16個工作天	核友型號：st76681673	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	150V	10V	900mA (Ta)	88 pF @ 25 V	2W (Ta)	1.2Ohms @ 540mA, 10V	5.5V @ 250µA	6.8 nC @ 10 V	±30V	-55°C ~ 150°C (TJ)	Surface Mount	Micro6?(TSOP-6)
質量保證 B-1	來自供應商的訂	IRF5803TRPBF INFINEON	3,000	21+		預計 11個工作天	核友型號：st71361755	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	40V	4.5V, 10V	3.4A(TA)	1110 pF @ 25 V	2W (Ta)	112mOhms @ 3.4A, 10V	3V @ 250µA	37 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)	Surface Mount	Micro6?(TSOP-6)
質量保證 B-1	來自供應商的訂	IRF5803TRPBF INFINEON	2,357			預計 11個工作天	核友型號：st75141196	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	40V	4.5V, 10V	3.4A(TA)	1110 pF @ 25 V	2W (Ta)	112mOhms @ 3.4A, 10V	3V @ 250µA	37 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)	Surface Mount	Micro6?(TSOP-6)
質量保證 B-1	來自供應商的訂海外位置	IRF5803TRPBF INFINEON	34,109	22+		預計 16個工作天	End of Life 核友型號：st49404356	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	40V	4.5V, 10V	3.4A(TA)	1110 pF @ 25 V	2W (Ta)	112mOhms @ 3.4A, 10V	3V @ 250µA	37 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)	Surface Mount	Micro6?(TSOP-6)
質量保證 B-1	來自供應商的訂	IRF5803TRPBF INFINEON	12,000	22+		預計 4個工作天	核友型號：st74840089	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	40V	4.5V, 10V	3.4A(TA)	1110 pF @ 25 V	2W (Ta)	112mOhms @ 3.4A, 10V	3V @ 250µA	37 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)	Surface Mount	Micro6?(TSOP-6)
質量保證 B-2	來自供應商的訂	IRF5803TRPBF INFINEON	6,000	22+	MOQ : 3,000 SPQ : 1	預計 11個工作天	核友型號：st76386651	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	40V	4.5V, 10V	3.4A(TA)	1110 pF @ 25 V	2W (Ta)	112mOhms @ 3.4A, 10V	3V @ 250µA	37 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)	Surface Mount	Micro6?(TSOP-6)
質量保證 B-1	來自供應商的訂	IRF5806TRPBF INFINEON	1,035			預計 11個工作天	核友型號：st75141197	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	TUMT3	2.5V, 4.5V	4A (Ta)	594 pF @ 15 V	2W (Ta)	86mOhms @ 4A, 4.5V	1.2V @ 250µA	11.4 nC @ 4.5 V	±20V	-55°C ~ 150°C (TJ)	Surface Mount	Micro6?(TSOP-6)
質量保證 B-1	來自供應商的訂	IRF60DM206 INFINEON	32			預計 11個工作天	核友型號：st75141198	Infineon Technologies	StrongIRFET™	N-Channel	MOSFET (Metal Oxide)	60V	6V, 10V	130A(Tc)	6530 pF @ 25 V	150°C (TJ)	2.9mOhms @ 80A, 10V	3.7V @ 150µA	200 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)	Surface Mount	DirectFET™ Isometric ME
質量保證 B-1	來自供應商的訂	IRF60SC241ARMA1 INFINEON	200			預計 11個工作天	核友型號：st75141199	Infineon Technologies	StrongIRFET™	N-Channel	MOSFET (Metal Oxide)	60V	6V, 10V	360A(Tc)	16000 pF @ 30 V	2.4W(Ta), 417W(Tc)	1.3mOhms @ 100A, 10V	3.7V @ 250µA	388 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-7
質量保證 B-1	來自供應商的訂	IRF610PBF VISHAY	22			預計 11個工作天	核友型號：st75141200	VISHAY		N-Channel	MOSFET (Metal Oxide)	200V	10V	3.3A(Tc)	140 pF @ 25 V	150°C (TJ)	1.5Ohms @ 2A, 10V	4V @ 250µA	8.2 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF610PBF VISHAY	74	1027		預計 11個工作天	核友型號：st65417924	VISHAY		N-Channel	MOSFET (Metal Oxide)	200V	10V	3.3A(Tc)	140 pF @ 25 V	150°C (TJ)	1.5Ohms @ 2A, 10V	4V @ 250µA	8.2 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF610PBF VISHAY	30	24+		預計 11個工作天	核友型號：st75024895	VISHAY		N-Channel	MOSFET (Metal Oxide)	200V	10V	3.3A(Tc)	140 pF @ 25 V	150°C (TJ)	1.5Ohms @ 2A, 10V	4V @ 250µA	8.2 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF6215PBF INTERNATIONAL RECTIFIER	30			預計 11個工作天	核友型號：st65359218	INTERNATIONAL RECTIFIER	HEXFET®	P-Channel	MOSFET (Metal Oxide)	150V	10V	13A (Tc)	860 pF @ 25 V	110W (Tc)	290mOhms @ 6.6A, 10V	4V @ 250µA	66 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF6216TRPBF INFINEON	45			預計 11個工作天	核友型號：st75141201	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	150V	10V	2.2A (Ta)	1280 pF @ 25 V	2.5W (Ta)	240mOhms @ 1.3A, 10V	5V @ 250µA	49 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO
質量保證 B-1	來自供應商的訂	IRF6218PBF INFINEON	1,000	21+		預計 8個工作天	核友型號：st70572728	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	150V	10V	27A (Tc)	2210 pF @ 25 V	250W(Tc)	150mOhms @ 16A, 10V	5V @ 250µA	110 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF630NPBF INFINEON	10,000	20+		預計 11個工作天	核友型號：st71361756	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	200V	10V	9.3A (Tc)	575 pF @ 25 V	82W(Tc)	300mOhms @ 5.4A, 10V	4V @ 250µA	35 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-2	來自供應商的訂	IRF630NPBF INFINEON	10,000	22/24+	MOQ : 3,000 SPQ : 1	預計 11個工作天	核友型號：st76369600	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	200V	10V	9.3A (Tc)	575 pF @ 25 V	82W(Tc)	300mOhms @ 5.4A, 10V	4V @ 250µA	35 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF630NPBF INFINEON	776			預計 11個工作天	核友型號：st75141203	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	200V	10V	9.3A (Tc)	575 pF @ 25 V	82W(Tc)	300mOhms @ 5.4A, 10V	4V @ 250µA	35 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂海外位置	IRF630NPBF INFINEON	29,111	25+		預計 16個工作天	End of Life 核友型號：st49404366	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	200V	10V	9.3A (Tc)	575 pF @ 25 V	82W(Tc)	300mOhms @ 5.4A, 10V	4V @ 250µA	35 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF630NPBF INFINEON	490	1846		預計 7個工作天	核友型號：st68903767	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	200V	10V	9.3A (Tc)	575 pF @ 25 V	82W(Tc)	300mOhms @ 5.4A, 10V	4V @ 250µA	35 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-2	來自供應商的訂	IRF630NPBF INFINEON TECHNOLOGIES	238,397	N/A	MOQ : 1,000 SPQ : 1,000	預計 16個工作天	核友型號：st76681674	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	200V	10V	9.3A (Tc)	575 pF @ 25 V	82W(Tc)	300mOhms @ 5.4A, 10V	4V @ 250µA	35 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF630NSTRLPBF INFINEON	16			預計 11個工作天	核友型號：st75141204	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	200V	10V	9.3A (Tc)	575 pF @ 25 V	82W(Tc)	300mOhms @ 5.4A, 10V	4V @ 250µA	35 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-2	來自供應商的訂	IRF630NSTRLPBF INFINEON TECHNOLOGIES	800	N/A	MOQ : 800 SPQ : 800	預計 16個工作天	核友型號：st76681675	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	200V	10V	9.3A (Tc)	575 pF @ 25 V	82W(Tc)	300mOhms @ 5.4A, 10V	4V @ 250µA	35 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂	IRF640 INTERNATIONAL RECTIFIER	2	1980-40		預計 7個工作天	核友型號：st68903775	INTERNATIONAL RECTIFIER	MESH OVERLAY™	N-Channel	MOSFET (Metal Oxide)	200V	10V	18A (Tc)	1560 pF @ 25 V	125W (Tc)	180mOhms @ 9A, 10V	4V @ 250µA	72 nC @ 10 V	±20V	150°C (TJ)	Through Hole	TO-220
質量保證 B-2	來自供應商的訂	IRF640NPBF INFINEON	1,066	22/23+	MOQ : 1,066 SPQ : 1	預計 11個工作天	核友型號：st76389985	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	200V	10V	18A (Tc)	1160 pF @ 25 V	-55°C ~ 175°C (TJ)	150mOhms @ 11A, 10V	4V @ 250µA	67 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF640NPBF INFINEON	16			預計 11個工作天	核友型號：st75141206	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	200V	10V	18A (Tc)	1160 pF @ 25 V	-55°C ~ 175°C (TJ)	150mOhms @ 11A, 10V	4V @ 250µA	67 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF640NPBF INFINEON	1,000	25+		預計 11個工作天	核友型號：st76831384	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	200V	10V	18A (Tc)	1160 pF @ 25 V	-55°C ~ 175°C (TJ)	150mOhms @ 11A, 10V	4V @ 250µA	67 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF640NPBF INFINEON	50,000	20+		預計 11個工作天	核友型號：st71361757	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	200V	10V	18A (Tc)	1160 pF @ 25 V	-55°C ~ 175°C (TJ)	150mOhms @ 11A, 10V	4V @ 250µA	67 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂海外位置	IRF640NPBF INFINEON	83,600	22+		預計 16個工作天	核友型號：st49404367	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	200V	10V	18A (Tc)	1160 pF @ 25 V	-55°C ~ 175°C (TJ)	150mOhms @ 11A, 10V	4V @ 250µA	67 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF640NPBF INFINEON TECHNOLOGIES	1,780	22+		預計 11個工作天	核友型號：st75028691	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	200V	10V	18A (Tc)	1160 pF @ 25 V	-55°C ~ 175°C (TJ)	150mOhms @ 11A, 10V	4V @ 250µA	67 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-2	來自供應商的訂	IRF640NPBF INFINEON TECHNOLOGIES	293,600	N/A	MOQ : 1,000 SPQ : 1,000	預計 16個工作天	核友型號：st76681676	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	200V	10V	18A (Tc)	1160 pF @ 25 V	-55°C ~ 175°C (TJ)	150mOhms @ 11A, 10V	4V @ 250µA	67 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF640NSTRLPBF INFINEON	688			預計 11個工作天	核友型號：st75141207	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	200V	10V	18A (Tc)	1160 pF @ 25 V	-55°C ~ 175°C (TJ)	150mOhms @ 11A, 10V	4V @ 250µA	67 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂	IRF640NSTRLPBF INFINEON	2,400	21+		預計 11個工作天	核友型號：st71361758	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	200V	10V	18A (Tc)	1160 pF @ 25 V	-55°C ~ 175°C (TJ)	150mOhms @ 11A, 10V	4V @ 250µA	67 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂海外位置	IRF640NSTRLPBF INFINEON	16,000	25+		預計 16個工作天	核友型號：st49404369	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	200V	10V	18A (Tc)	1160 pF @ 25 V	-55°C ~ 175°C (TJ)	150mOhms @ 11A, 10V	4V @ 250µA	67 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-2	來自供應商的訂	IRF640NSTRLPBF INFINEON TECHNOLOGIES	121,600	N/A	MOQ : 800 SPQ : 800	預計 16個工作天	核友型號：st76681677	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	200V	10V	18A (Tc)	1160 pF @ 25 V	-55°C ~ 175°C (TJ)	150mOhms @ 11A, 10V	4V @ 250µA	67 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂	IRF6609TR1 INFINEON	20	1327		預計 7個工作天	核友型號：st68903782	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	TUMT3	4.5V, 10V	31A(TA), 150A(Tc)	6290 pF @ 10 V	1.8W(Ta), 89W(Tc)	2mOhms @ 31A, 10V	2.45V @ 250µA	69 nC @ 4.5 V	±20V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? MT
質量保證 B-1	來自供應商的訂	IRF6613TRPBF INFINEON	25			預計 11個工作天	核友型號：st75141210	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	40V	4.5V, 10V	23A(TA), 150A(Tc)	5950 pF @ 15 V	2.8W(Ta), 89W(Tc)	3.4mOhms @ 23A, 10V	2.25V @ 250µA	63 nC @ 4.5 V	±20V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET™ MT
質量保證 B-2	來自供應商的訂	IRF6614TRPBF INFINEON	13,111	22/23+	MOQ : 100 SPQ : 1	預計 11個工作天	核友型號：st76528929	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	40V	4.5V, 10V	12.7A(TA), 55A(Tc)	2560 pF @ 20 V	2.1W(Ta), 42W(Tc)	8.3mOhms @ 12.7A, 10V	2.25V @ 250µA	29 nC @ 4.5 V	±20V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? ST
質量保證 B-1	來自供應商的訂	IRF6616TRPBF INFINEON	5			預計 11個工作天	核友型號：st75141211	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	40V	4.5V, 10V	19A(TA), 106A(Tc)	3765 pF @ 20 V	2.8W(Ta), 89W(Tc)	5mOhms @ 19A, 10V	2.25V @ 250µA	44 nC @ 4.5 V	±20V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET™ MX
質量保證 B-1	來自供應商的訂	IRF6617TRPBF INFINEON	287			預計 11個工作天	核友型號：st75141212	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	30V	4.5V, 10V	14A(TA), 55A(Tc)	1300 pF @ 15 V	2.1W(Ta), 42W(Tc)	8.1mOhms @ 15A, 10V	2.35V @ 250µA	17 nC @ 4.5 V	±20V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? ST