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庫存類別供應商排名	庫存所在位置	型號 / 製造商 / 其他	庫存量	生產年份/批號	最低訂貨數量 / 後續訂購數量	預定出貨日	資訊核友管理編號	Manufacturer	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Operating Temperature Range	Mounting Type	Device Package
質量保證 B-1	來自供應商的訂	IRF4905PBF INFINEON	106			預計 11個工作天	核友型號：st75141181	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	55V	10V	74A (Tc)	3400 pF @ 25 V	200W(Tc)	20mOhms @ 38A, 10V	4V @ 250µA	180 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-2	來自供應商的訂	IRF4905PBF INFINEON	7,088	22/23+	MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st76429075	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	55V	10V	74A (Tc)	3400 pF @ 25 V	200W(Tc)	20mOhms @ 38A, 10V	4V @ 250µA	180 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證	來自供應商的訂	IRF4905PBF INFINEON	83,004	23+		預計 16個工作天	核友型號：st60358342	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	55V	10V	74A (Tc)	3400 pF @ 25 V	200W(Tc)	20mOhms @ 38A, 10V	4V @ 250µA	180 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF4905PbF INFINEON	871	10+		預計 11個工作天	核友型號：st73652239	Infineon Technologies
質量保證 B-1	來自供應商的訂	IRF4905STRLPBF INFINEON	89			預計 11個工作天	核友型號：st75141182	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	55V	10V	42A (Tc)	3500 pF @ 25 V	170W(Tc)	20mOhms @ 42A, 10V	4V @ 250µA	180 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂	IRF4905STRLPBF INFINEON	50,400	23+		預計 16個工作天	核友型號：st61363128	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	55V	10V	42A (Tc)	3500 pF @ 25 V	170W(Tc)	20mOhms @ 42A, 10V	4V @ 250µA	180 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK
質量保證 B-2	來自供應商的訂	IRF4905STRLPBF INFINEON	1,678	20+	MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st76378604	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	55V	10V	42A (Tc)	3500 pF @ 25 V	170W(Tc)	20mOhms @ 42A, 10V	4V @ 250µA	180 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂	IRF4905STRLPBF INFINEON	800	25+		預計 11個工作天	核友型號：st75027783	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	55V	10V	42A (Tc)	3500 pF @ 25 V	170W(Tc)	20mOhms @ 42A, 10V	4V @ 250µA	180 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂	IRF4905STRLPBF INFINEON	4,803	21+		預計 11個工作天	核友型號：st71361750	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	55V	10V	42A (Tc)	3500 pF @ 25 V	170W(Tc)	20mOhms @ 42A, 10V	4V @ 250µA	180 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK
質量保證 B-2	來自供應商的訂	IRF4905STRLPBF INFINEON TECHNOLOGIES	8,010	N/A	MOQ : 800 SPQ : 800	預計 16個工作天	核友型號：st76681666	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	55V	10V	42A (Tc)	3500 pF @ 25 V	170W(Tc)	20mOhms @ 42A, 10V	4V @ 250µA	180 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂	IRF510PBF VISHAY	3,363	22+		預計 16個工作天	核友型號：st76083656	VISHAY		N-Channel	MOSFET (Metal Oxide)	100V	10V	5.6A (Tc)	180 pF @ 25 V	43W (Tc)	540mOhm @ 3.4A, 10V	4V @ 250µA	8.3 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF510PBF VISHAY	114	2238		預計 7個工作天	核友型號：st68903704	VISHAY		N-Channel	MOSFET (Metal Oxide)	100V	10V	5.6A (Tc)	180 pF @ 25 V	43W (Tc)	540mOhm @ 3.4A, 10V	4V @ 250µA	8.3 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF520NPBF INFINEON	8			預計 11個工作天	核友型號：st75141185	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10V	9.7A(Tc)	330 pF @ 25 V	48W (Tc)	200mOhms @ 5.7A, 10V	4V @ 250µA	25 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF520NPBF INFINEON	2,842	24+		預計 16個工作天	核友型號：st61363129	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10V	9.7A(Tc)	330 pF @ 25 V	48W (Tc)	200mOhms @ 5.7A, 10V	4V @ 250µA	25 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-2	來自供應商的訂	IRF520NPBF INFINEON	8,026	22+	MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st76400937	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10V	9.7A(Tc)	330 pF @ 25 V	48W (Tc)	200mOhms @ 5.7A, 10V	4V @ 250µA	25 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-2	來自供應商的訂	IRF5210PBF INFINEON TECHNOLOGIES	17,000	N/A	MOQ : 1,000 SPQ : 1,000	預計 16個工作天	核友型號：st76681667	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	100V	10V	40A (Tc)	2700 pF @ 25 V	200W(Tc)	60mOhms @ 24A, 10V	4V @ 250µA	180 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-2	來自供應商的訂	IRF5210PBF INFINEON	6,000	22/24+	MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st76439298	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	100V	10V	40A (Tc)	2700 pF @ 25 V	200W(Tc)	60mOhms @ 24A, 10V	4V @ 250µA	180 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂海外位置	IRF5210PBF INFINEON	5,014	24+		預計 16個工作天	核友型號：st49404342	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	100V	10V	40A (Tc)	2700 pF @ 25 V	200W(Tc)	60mOhms @ 24A, 10V	4V @ 250µA	180 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF5210PBF INTERNATIONAL RECTIFIER	12	04+		預計 11個工作天	核友型號：st65434572	INTERNATIONAL RECTIFIER	HEXFET®	P-Channel	MOSFET (Metal Oxide)	100V	10V	40A (Tc)	2700 pF @ 25 V	200W(Tc)	60mOhms @ 24A, 10V	4V @ 250µA	180 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF5210PBF INTERNATIONAL RECTIFIER	20	NA		預計 7個工作天	核友型號：st68903713	INTERNATIONAL RECTIFIER	HEXFET®	P-Channel	MOSFET (Metal Oxide)	100V	10V	40A (Tc)	2700 pF @ 25 V	200W(Tc)	60mOhms @ 24A, 10V	4V @ 250µA	180 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF5210STRLPBF INFINEON	89			預計 11個工作天	核友型號：st75141187	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	100V	10V	38A (Tc)	2780 pF @ 25 V	3.1W(Ta), 170W(Tc)	60mOhms @ 38A, 10V	4V @ 250µA	230 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂	IRF5210STRLPBF INFINEON	1,841	21+		預計 11個工作天	核友型號：st71361752	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	100V	10V	38A (Tc)	2780 pF @ 25 V	3.1W(Ta), 170W(Tc)	60mOhms @ 38A, 10V	4V @ 250µA	230 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂海外位置	IRF5210STRLPBF INFINEON	28,006	24+		預計 16個工作天	核友型號：st49404343	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	100V	10V	38A (Tc)	2780 pF @ 25 V	3.1W(Ta), 170W(Tc)	60mOhms @ 38A, 10V	4V @ 250µA	230 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK
質量保證 B-2	來自供應商的訂	IRF5210STRLPBF INFINEON TECHNOLOGIES	66,400	N/A	MOQ : 800 SPQ : 800	預計 16個工作天	核友型號：st76681668	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	100V	10V	38A (Tc)	2780 pF @ 25 V	3.1W(Ta), 170W(Tc)	60mOhms @ 38A, 10V	4V @ 250µA	230 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂	IRF5210STRRPBF INFINEON	3,400	21+/22+	MOQ : 45 SPQ : 800	預計 8個工作天	核友型號：st73485677	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	100V	10V	38A (Tc)	2780 pF @ 25 V	3.1W(Ta), 170W(Tc)	60mOhms @ 38A, 10V	4V @ 250µA	230 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK
質量保證 B-2	來自供應商的訂	IRF5305PBF INFINEON TECHNOLOGIES	7,000	N/A	MOQ : 600 SPQ : 300	預計 16個工作天	核友型號：st76681669	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	55V	10V	31A (Tc)	1200 pF @ 25 V	110W (Tc)	60mOhms @ 16A, 10V	4V @ 250µA	63 nC @ 10 V	±20V	-55°C ~ 155°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF5305PBF INFINEON	924			預計 11個工作天	核友型號：st75141188	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	55V	10V	31A (Tc)	1200 pF @ 25 V	110W (Tc)	60mOhms @ 16A, 10V	4V @ 250µA	63 nC @ 10 V	±20V	-55°C ~ 155°C (TJ)	Through Hole	TO-220AB
質量保證 B-2	來自供應商的訂	IRF5305PBF INFINEON	8,808	22/24+	MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st76399891	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	55V	10V	31A (Tc)	1200 pF @ 25 V	110W (Tc)	60mOhms @ 16A, 10V	4V @ 250µA	63 nC @ 10 V	±20V	-55°C ~ 155°C (TJ)	Through Hole	TO-220AB
質量保證 B-2	來自供應商的訂	IRF5305STRLPBF INFINEON	2,286	18+	MOQ : 100 SPQ : 1	預計 11個工作天	核友型號：st76527645	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	55V	10V	31A (Tc)	1200 pF @ 25 V	3.8W(Ta), 110W(Tc)	60mOhms @ 16A, 10V	4V @ 250µA	63 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂	IRF5305STRLPBF INFINEON	50	2212		預計 7個工作天	核友型號：st68903724	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	55V	10V	31A (Tc)	1200 pF @ 25 V	3.8W(Ta), 110W(Tc)	60mOhms @ 16A, 10V	4V @ 250µA	63 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-2	來自供應商的訂	IRF530NPBF INFINEON	49,540	22/25+	MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st76376238	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10V	17A (Tc)	920 pF @ 25 V	70W (Tc)	90mOhm @ 9A, 10V	4V @ 250µA	37 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證	來自供應商的訂	IRF530NPBF INFINEON	50,000	25+		預計 16個工作天	核友型號：st60358356	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10V	17A (Tc)	920 pF @ 25 V	70W (Tc)	90mOhm @ 9A, 10V	4V @ 250µA	37 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-2	來自供應商的訂	IRF530NPBF INFINEON TECHNOLOGIES	216,723	N/A	MOQ : 1,000 SPQ : 1,000	預計 16個工作天	核友型號：st76681670	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10V	17A (Tc)	920 pF @ 25 V	70W (Tc)	90mOhm @ 9A, 10V	4V @ 250µA	37 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF530NPbF INFINEON	1,000			預計 8個工作天	核友型號：st66225768	Infineon Technologies
質量保證 B-1	來自供應商的訂	IRF530NSTRLPBF INFINEON	581			預計 11個工作天	核友型號：st75141190	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10V	17A (Tc)	920 pF @ 25 V	3.8W(Ta), 70W(Tc)	90mOhm @ 9A, 10V	4V @ 250µA	37 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂	IRF530NSTRLPBF INFINEON	30,000	20+		預計 11個工作天	核友型號：st71361753	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10V	17A (Tc)	920 pF @ 25 V	3.8W(Ta), 70W(Tc)	90mOhm @ 9A, 10V	4V @ 250µA	37 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-2	來自供應商的訂	IRF530NSTRLPBF INFINEON	400	22/23+	MOQ : 400 SPQ : 1	預計 11個工作天	核友型號：st76405673	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10V	17A (Tc)	920 pF @ 25 V	3.8W(Ta), 70W(Tc)	90mOhm @ 9A, 10V	4V @ 250µA	37 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-2	來自供應商的訂	IRF530NSTRLPBF INFINEON TECHNOLOGIES	16,000	N/A	MOQ : 800 SPQ : 800	預計 16個工作天	核友型號：st76681671	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10V	17A (Tc)	920 pF @ 25 V	3.8W(Ta), 70W(Tc)	90mOhm @ 9A, 10V	4V @ 250µA	37 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-2	來自供應商的訂	IRF530PBF VISHAY	4,730	22/23+	MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st76372682	VISHAY		N-Channel	MOSFET (Metal Oxide)	100V	10V	14A (Tc)	670 pF @ 25 V	88W(Tc)	160mOhms @ 8.4A, 10V	4V @ 250µA	26 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF530PBF VISHAY	4,394	na		預計 7個工作天	核友型號：st68903729	VISHAY		N-Channel	MOSFET (Metal Oxide)	100V	10V	14A (Tc)	670 pF @ 25 V	88W(Tc)	160mOhms @ 8.4A, 10V	4V @ 250µA	26 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF530PBF VISHAY	284	20		預計 11個工作天	核友型號：st65329677	VISHAY		N-Channel	MOSFET (Metal Oxide)	100V	10V	14A (Tc)	670 pF @ 25 V	88W(Tc)	160mOhms @ 8.4A, 10V	4V @ 250µA	26 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF540NLPBF INFINEON	50			預計 11個工作天	核友型號：st75141191	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10V	33A (Tc)	1960 pF @ 25 V	130W (Tc)	44mOhm @ 16A, 10V	4V @ 250µA	71 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-262
質量保證 B-1	來自供應商的訂	IRF540NPBF INFINEON	1,000	21+		預計 8個工作天	核友型號：st70572727	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10V	33A (Tc)	1960 pF @ 25 V	130W (Tc)	44mOhm @ 16A, 10V	4V @ 250µA	71 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF540NPBF INFINEON	400	25+		預計 11個工作天	核友型號：st75027285	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10V	33A (Tc)	1960 pF @ 25 V	130W (Tc)	44mOhm @ 16A, 10V	4V @ 250µA	71 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證	來自供應商的訂	IRF540NPBF INFINEON	33,063	24+		預計 16個工作天	核友型號：st60358361	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10V	33A (Tc)	1960 pF @ 25 V	130W (Tc)	44mOhm @ 16A, 10V	4V @ 250µA	71 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF540NPBF INFINEON	5	2215		預計 7個工作天	核友型號：st68903738	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10V	33A (Tc)	1960 pF @ 25 V	130W (Tc)	44mOhm @ 16A, 10V	4V @ 250µA	71 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-2	來自供應商的訂	IRF540NPBF INFINEON TECHNOLOGIES	219,000	N/A	MOQ : 1,000 SPQ : 1,000	預計 16個工作天	核友型號：st76681672	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10V	33A (Tc)	1960 pF @ 25 V	130W (Tc)	44mOhm @ 16A, 10V	4V @ 250µA	71 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB
質量保證 B-1	來自供應商的訂	IRF540NSTRLPBF INFINEON	11,237	20+		預計 11個工作天	核友型號：st71361754	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10V	33A (Tc)	1960 pF @ 25 V	130W (Tc)	44mOhm @ 16A, 10V	4V @ 250µA	71 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂	IRF540NSTRLPBF INFINEON	2			預計 11個工作天	核友型號：st75141192	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10V	33A (Tc)	1960 pF @ 25 V	130W (Tc)	44mOhm @ 16A, 10V	4V @ 250µA	71 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK
質量保證 B-1	來自供應商的訂海外位置	IRF540NSTRLPBF INFINEON	48,650	25+		預計 16個工作天	核友型號：st49404352	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10V	33A (Tc)	1960 pF @ 25 V	130W (Tc)	44mOhm @ 16A, 10V	4V @ 250µA	71 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK