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庫存類別供應商排名	庫存所在位置	型號 / 製造商 / 其他	庫存量	生產年份/批號	最低訂貨數量 / 後續訂購數量	預定出貨日	資訊核友管理編號	Manufacturer	Series	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate charge (Qg) when Vgs is applied (max)	Technology	Configuration	FET Feature	Operating Temperature Range	Applications	Mounting Type	Device Package
質量保證 B-2	來自供應商的訂	IRF7342TRPBF INFINEON	4,000	22/23+	MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st76403580	Infineon Technologies	HEXFET®	55V	3.4A	690pF @ 25V	2W	105mOhm @ 3.4A, 10V	1V @ 250μA	38nC @ 10V	MOSFET (Metal Oxide)	2 P-Channel (Dual)	Logic Level Gate	-55°C ~ 150°C (TJ)		Surface Mount	8-SO
質量保證 B-2	來自供應商的訂	IRF7342TRPBF INFINEON TECHNOLOGIES	4,000	N/A	MOQ : 4,000 SPQ : 4,000	預計 16個工作天	核友型號：st76681683	Infineon Technologies	HEXFET®	55V	3.4A	690pF @ 25V	2W	105mOhm @ 3.4A, 10V	1V @ 250μA	38nC @ 10V	MOSFET (Metal Oxide)	2 P-Channel (Dual)	Logic Level Gate	-55°C ~ 150°C (TJ)		Surface Mount	8-SO
質量保證 B-1	來自供應商的訂	IRF7343PBF INTERNATIONAL RECTIFIER	90	2006-13		預計 7個工作天	核友型號：st68903826	Infineon Technologies	HEXFET®	55V	4.7A, 3.4A	740pF @ 25V	2W	50mOhm @ 4.7A, 10V	1V @ 250μA	36nC @ 10V	MOSFET (Metal Oxide)	N and P-Channel	標準	-55°C ~ 150°C (TJ)		Surface Mount	8-SO
質量保證 B-1	來自供應商的訂	IRF7343TRPBF INFINEON	36,000	24+		預計 16個工作天	核友型號：st61363130	Infineon Technologies	HEXFET®	55V	4.7A, 3.4A	740pF @ 25V	2W	50mOhm @ 4.7A, 10V	1V @ 250μA	36nC @ 10V	MOSFET (Metal Oxide)	N and P-Channel		-55°C ~ 150°C (TJ)		Surface Mount	8-SO
質量保證 B-2	來自供應商的訂	IRF7343TRPBF INFINEON	17,870	22/23+	MOQ : 500 SPQ : 1	預計 11個工作天	核友型號：st76489910	Infineon Technologies	HEXFET®	55V	4.7A, 3.4A	740pF @ 25V	2W	50mOhm @ 4.7A, 10V	1V @ 250μA	36nC @ 10V	MOSFET (Metal Oxide)	N and P-Channel		-55°C ~ 150°C (TJ)		Surface Mount	8-SO
質量保證 B-1	來自供應商的訂海外位置	IRF7351TRPBF INFINEON	21,111	22+		預計 16個工作天	核友型號：st49404406	Infineon Technologies	HEXFET®	60V	8A	1330pF @ 30V	2W	17.8mOhm @ 8A, 10V	4V @ 50μA	36nC @ 10V	MOSFET (Metal Oxide)	2 N-Channel (Dual)	Logic Level Gate	-55°C ~ 150°C (TJ)		Surface Mount	8-SO
質量保證 B-2	來自供應商的訂	IRF7351TRPBF INFINEON	682	22/23+	MOQ : 682 SPQ : 1	預計 11個工作天	核友型號：st76441279
質量保證 B-1	來自供應商的訂	IRF7351TRPBF INFINEON	250			預計 11個工作天	核友型號：st75141248
質量保證 B-1	來自供應商的訂	IRF7351TRPBF INFINEON	6,410	23+		預計 11個工作天	核友型號：st75024084
質量保證 B-1	來自供應商的訂海外位置	IRF7380TRPBF INFINEON	120,111	24+		預計 16個工作天	核友型號：st49404408	Infineon Technologies	HEXFET®	80V	3.6A	660pF @ 25V	2W	73mOhms @ 2.2A, 10V	4V @ 250μA	23nC @ 10V	MOSFET (Metal Oxide)	2 N-Channel (Dual)	Logic Level Gate	-55°C ~ 150°C (TJ)		Surface Mount	8-SO
質量保證 B-2	來自供應商的訂	IRF7389TRPBF INFINEON	4,000	22/24+	MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st76426517	Infineon Technologies	HEXFET®	30V		650pF @ 25V	2.5W	29mOhm @ 5.8A, 10V	1V @ 250μA	33nC @ 10V	MOSFET (Metal Oxide)	N and P-Channel	Logic Level Gate	-55°C ~ 150°C (TJ)		Surface Mount	8-SO
質量保證 B-1	來自供應商的訂	IRF7401PBF INFINEON	1,085	1847+		預計 4個工作天	核友型號：st74840124	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	TUMT3	2.7V, 4.5V	8.7A(TA)	1600 pF @ 15 V	2.5W (Ta)	22mOhms @ 4.1A, 4.5V	700mV @ 250µA(Mim)	48 nC @ 4.5 V	±12V	-55°C ~ 150°C (TJ)		Surface Mount
質量保證 B-1	來自供應商的訂	IRF7402TRPBF INFINEON	1,091			預計 11個工作天	核友型號：st75141249	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	TUMT3	2.7V, 4.5V	6.8A (Ta)	650 pF @ 15 V	2.5W (Ta)	35mOhms @ 4.1A, 4.5V	700mV @ 250µA(Mim)	22 nC @ 4.5 V	±12V	-55°C ~ 150°C (TJ)		Surface Mount
質量保證 B-1	來自供應商的訂	IRF7404TRPBF INFINEON	2			預計 11個工作天	核友型號：st75141250	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	TUMT3	2.7V, 4.5V	6.7A(TA)	1500 pF @ 15 V	2.5W (Ta)	40mOhms @ 3.2A, 4.5V	700mV @ 250µA(Mim)	50 nC @ 4.5 V	±12V	-55°C ~ 150°C (TJ)		Surface Mount
質量保證 B-2	來自供應商的訂	IRF7404TRPBF INFINEON	2,000	22/23+	MOQ : 2,000 SPQ : 1	預計 11個工作天	核友型號：st76382037	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	TUMT3	2.7V, 4.5V	6.7A(TA)	1500 pF @ 15 V	2.5W (Ta)	40mOhms @ 3.2A, 4.5V	700mV @ 250µA(Mim)	50 nC @ 4.5 V	±12V	-55°C ~ 150°C (TJ)		Surface Mount
質量保證 B-1	來自供應商的訂	IRF7404TRPBF INFINEON	2,700	2007-25		預計 7個工作天	核友型號：st68903832	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	TUMT3	2.7V, 4.5V	6.7A(TA)	1500 pF @ 15 V	2.5W (Ta)	40mOhms @ 3.2A, 4.5V	700mV @ 250µA(Mim)	50 nC @ 4.5 V	±12V	-55°C ~ 150°C (TJ)		Surface Mount
質量保證 B-1	來自供應商的訂	IRF7406TRPBF INFINEON	2			預計 11個工作天	核友型號：st75141251	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	30V	4.5V, 10V	5.8A (Ta)	1100 pF @ 25 V	2.5W (Ta)	45mOhms @ 2.8A, 10V	1V @ 250µA	59 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Surface Mount
質量保證 B-2	來自供應商的訂	IRF740PBF VISHAY	5,145	22+	MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st76370446	VISHAY		N-Channel	MOSFET (Metal Oxide)	400V	10V	10A (Tc)	1400 pF @ 25 V	125W (Tc)	550mOhms @ 6A, 10V	4V @ 250µA	63 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Through Hole
質量保證 B-1	來自供應商的訂	IRF740PBF VISHAY	9,119			預計 11個工作天	核友型號：st75141252	VISHAY		N-Channel	MOSFET (Metal Oxide)	400V	10V	10A (Tc)	1400 pF @ 25 V	125W (Tc)	550mOhms @ 6A, 10V	4V @ 250µA	63 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Through Hole
質量保證 B-1	來自供應商的訂	IRF740PBF VISHAY	1,000	22+		預計 11個工作天	核友型號：st75020240	VISHAY		N-Channel	MOSFET (Metal Oxide)	400V	10V	10A (Tc)	1400 pF @ 25 V	125W (Tc)	550mOhms @ 6A, 10V	4V @ 250µA	63 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Through Hole
質量保證 B-1	來自供應商的訂	IRF740PBF VISHAY	25,000	24+		預計 16個工作天	核友型號：st76083659	VISHAY		N-Channel	MOSFET (Metal Oxide)	400V	10V	10A (Tc)	1400 pF @ 25 V	125W (Tc)	550mOhms @ 6A, 10V	4V @ 250µA	63 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Through Hole
質量保證 B-1	來自供應商的訂	IRF740PBF VISHAY	15	na		預計 7個工作天	核友型號：st68903836	VISHAY		N-Channel	MOSFET (Metal Oxide)	400V	10V	10A (Tc)	1400 pF @ 25 V	125W (Tc)	550mOhms @ 6A, 10V	4V @ 250µA	63 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Through Hole
質量保證 B-2	來自供應商的訂	IRF7410TRPBF INFINEON	15,910	15+	MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st76400939	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	12V	1.8V, 4.5V	16A (Ta)	8676 pF @ 10 V	2.5W (Ta)	7mOhms @ 16A, 4.5V	900mV @ 250µA	91 nC @ 4.5 V	±8V	-55°C ~ 150°C (TJ)		Surface Mount
質量保證 B-1	來自供應商的訂	IRF7410TRPBF INFINEON	742	17+		預計 11個工作天	核友型號：st71361766	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	12V	1.8V, 4.5V	16A (Ta)	8676 pF @ 10 V	2.5W (Ta)	7mOhms @ 16A, 4.5V	900mV @ 250µA	91 nC @ 4.5 V	±8V	-55°C ~ 150°C (TJ)		Surface Mount
質量保證 B-1	來自供應商的訂	IRF7413TRPBF INFINEON	1			預計 11個工作天	核友型號：st75141253	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	30V	4.5V, 10V	13A (Ta)	1800 pF @ 25 V	2.5W (Ta)	11mOhms @ 7.3A, 10V	3V @ 250µA	79 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Surface Mount
質量保證 B-1	來自供應商的訂	IRF7413TRPBF INFINEON	1,000	21+		預計 11個工作天	核友型號：st71361767	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	30V	4.5V, 10V	13A (Ta)	1800 pF @ 25 V	2.5W (Ta)	11mOhms @ 7.3A, 10V	3V @ 250µA	79 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Surface Mount
質量保證 B-1	來自供應商的訂	IRF7413ZTRPBF INFINEON	6			預計 11個工作天	核友型號：st75141254	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	30V	4.5V, 10V	13A (Ta)	1210 pF @ 15 V	2.5W (Ta)	10mOhms @ 13A, 10V	2.25V @ 25µA	14 nC @ 4.5 V	±20V	-55°C ~ 150°C (TJ)		Surface Mount
質量保證 B-2	來自供應商的訂	IRF7413ZTRPBF INFINEON	3,148	22+	MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st76400940	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	30V	4.5V, 10V	13A (Ta)	1210 pF @ 15 V	2.5W (Ta)	10mOhms @ 13A, 10V	2.25V @ 25µA	14 nC @ 4.5 V	±20V	-55°C ~ 150°C (TJ)		Surface Mount
質量保證 B-2	來自供應商的訂	IRF7416TRPBF INFINEON	21,564	22/24+	MOQ : 4,000 SPQ : 1	預計 11個工作天	核友型號：st76355107	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	30V	4.5V, 10V	10A (Ta)	1700 pF @ 25 V	2.5W (Ta)	20mOhms @ 5.6A, 10V	1V @ 250µA	92 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Surface Mount
質量保證 B-1	來自供應商的訂	IRF7416TRPBF INFINEON	1,986			預計 11個工作天	核友型號：st75141255	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	30V	4.5V, 10V	10A (Ta)	1700 pF @ 25 V	2.5W (Ta)	20mOhms @ 5.6A, 10V	1V @ 250µA	92 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Surface Mount
質量保證 B-1	來自供應商的訂	IRF7416TRPBF INFINEON	18,000	20+		預計 11個工作天	核友型號：st71361768	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	30V	4.5V, 10V	10A (Ta)	1700 pF @ 25 V	2.5W (Ta)	20mOhms @ 5.6A, 10V	1V @ 250µA	92 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Surface Mount
質量保證 B-1	來自供應商的訂海外位置	IRF7416TRPBF INFINEON	30,000	26+		預計 16個工作天	核友型號：st49404413	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	30V	4.5V, 10V	10A (Ta)	1700 pF @ 25 V	2.5W (Ta)	20mOhms @ 5.6A, 10V	1V @ 250µA	92 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Surface Mount
質量保證 B-1	來自供應商的訂	IRF7416TRPBF INFINEON	4,000	24+		預計 11個工作天	核友型號：st75024518	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	30V	4.5V, 10V	10A (Ta)	1700 pF @ 25 V	2.5W (Ta)	20mOhms @ 5.6A, 10V	1V @ 250µA	92 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Surface Mount
質量保證 B-1	來自供應商的訂	IRF7416TRPBF INFINEON	50	2304		預計 7個工作天	核友型號：st68903838	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	30V	4.5V, 10V	10A (Ta)	1700 pF @ 25 V	2.5W (Ta)	20mOhms @ 5.6A, 10V	1V @ 250µA	92 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Surface Mount
質量保證 B-2	來自供應商的訂	IRF7416TRPBF INFINEON TECHNOLOGIES	84,000	N/A	MOQ : 4,000 SPQ : 4,000	預計 16個工作天	核友型號：st76681685	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	30V	4.5V, 10V	10A (Ta)	1700 pF @ 25 V	2.5W (Ta)	20mOhms @ 5.6A, 10V	1V @ 250µA	92 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Surface Mount
質量保證 B-1	來自供應商的訂	IRF7424TRPBF INFINEON	10,636	21+22+		預計 11個工作天	核友型號：st70448934	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	30V	4.5V, 10V	11A (Ta)	4030 pF @ 25 V	2.5W (Ta)	13.5mOhms @ 11A, 10V	2.5V @ 250µA	110 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Surface Mount
質量保證 B-1	來自供應商的訂海外位置	IRF7425TRPBF INFINEON	3,943	23+		預計 16個工作天	End of Life 核友型號：st49404414	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	TUMT3	2.5V, 4.5V	15A (Ta)	7980 pF @ 15 V	2.5W (Ta)	8.2mOhms @ 15A, 4.5V	1.2V @ 250µA	130 nC @ 4.5 V	±12V	-55°C ~ 150°C (TJ)		Surface Mount
質量保證 B-2	來自供應商的訂	IRF7425TRPBF INFINEON	4,000	22/23+	MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st76425595	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	TUMT3	2.5V, 4.5V	15A (Ta)	7980 pF @ 15 V	2.5W (Ta)	8.2mOhms @ 15A, 4.5V	1.2V @ 250µA	130 nC @ 4.5 V	±12V	-55°C ~ 150°C (TJ)		Surface Mount
質量保證 B-1	來自供應商的訂	IRF7451TRPBF INFINEON	10			預計 11個工作天	核友型號：st75141256	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	150V	10V	3.6A (Ta)	990 pF @ 25 V	2.5W (Ta)	90mOhms @ 2.2A, 10V	5.5V @ 250µA	41 nC @ 10 V	±30V	-55°C ~ 150°C (TJ)		Surface Mount
質量保證 B-1	來自供應商的訂	IRF7455TRPBF INFINEON	40	na		預計 7個工作天	核友型號：st68903843	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	30V	2.8V, 10V	15A (Ta)	3480 pF @ 25 V	2.5W (Ta)	7.5mOhms @ 15A, 10V	2V @ 250µA	56 nC @ 5 V	±12V	-55°C ~ 150°C (TJ)		Surface Mount
質量保證 B-1	來自供應商的訂	IRF7456TRPBF INFINEON	2			預計 11個工作天	核友型號：st75141257	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	TUMT3	2.8V, 10V	16A (Ta)	3640 pF @ 15 V	2.5W (Ta)	6.5mOhms @ 16A, 10V	2V @ 250µA	62 nC @ 5 V	±12V	-55°C ~ 150°C (TJ)		Surface Mount
質量保證 B-1	來自供應商的訂	IRF7458TRPBF INFINEON	4,000	10+		預計 11個工作天	核友型號：st75022044	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	30V	10V, 16V	14A (Ta)	2410 pF @ 15 V	2.5W (Ta)	8mOhms @ 14A, 16V	4V @ 250µA	59 nC @ 10 V	±30V	-55°C ~ 150°C (TJ)		Surface Mount
質量保證 B-1	來自供應商的訂	IRF7465TRPBF INFINEON	9,654	24+		預計 16個工作天	核友型號：st76078870	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	150V	10V	1.9A (Ta)	330 pF @ 25 V	2.5W (Ta)	280mOhms @ 1.14A, 10V	5.5V @ 250µA	15 nC @ 10 V	±30V	-55°C ~ 150°C (TJ)		Surface Mount
質量保證 B-2	來自供應商的訂	IRF7469TRPBF INFINEON	18,265	21+	MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st76400941	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	40V	4.5V, 10V	9A (Ta)	2000 pF @ 20 V	2.5W (Ta)	17mOhm @ 9A, 10V	3V @ 250µA	23 nC @ 4.5 V	±20V	-55°C ~ 150°C (TJ)		Surface Mount
質量保證 B-2	來自供應商的訂	IRF7470TRPBF INFINEON	2,000	22/23+	MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st76429220	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	40V	2.8V, 10V	10A (Ta)	3430 pF @ 20 V	2.5W (Ta)	13mOhm @ 10A, 10V	2V @ 250µA	44 nC @ 4.5 V	±12V	-55°C ~ 150°C (TJ)		Surface Mount
質量保證 B-1	來自供應商的訂	IRF7473TRPBF INFINEON	89			預計 11個工作天	核友型號：st75141258	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10V	6.9A(TA)	3180 pF @ 25 V	2.5W (Ta)	26mOhms @ 4.1A, 10V	5.5V @ 250µA	61 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Surface Mount
質量保證 B-1	來自供應商的訂	IRF7476TRPBF INFINEON	63			預計 11個工作天	核友型號：st75141259	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	12V	2.8V, 4.5V	15A (Ta)	2550 pF @ 6 V	2.5W (Ta)	8mOhms @ 15A, 4.5V	1.9V @ 250µA	40 nC @ 4.5 V	±12V	-55°C ~ 150°C (TJ)		Surface Mount
質量保證 B-1	來自供應商的訂	IRF7480MTRPBF INFINEON	4			預計 11個工作天	核友型號：st75141260	Infineon Technologies	HEXFET®, StrongIRFET™	N-Channel	MOSFET (Metal Oxide)	40V	6V, 10V	217A(Tc)	6680 pF @ 25 V	150°C (TJ)	1.2mOhms @ 132A, 10V	3.9V @ 150µA	185 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Surface Mount
質量保證 B-1	來自供應商的訂	IRF7490TRPBF INFINEON	248			預計 11個工作天	核友型號：st75141261	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10V	5.4A(TA)	1720 pF @ 25 V	2.5W (Ta)	39mOhms @ 3.2A, 10V	4V @ 250µA	56 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Surface Mount
質量保證 B-1	來自供應商的訂海外位置	IRF7490TRPBF INFINEON	24,000	21+		預計 16個工作天	核友型號：st49404419	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10V	5.4A(TA)	1720 pF @ 25 V	2.5W (Ta)	39mOhms @ 3.2A, 10V	4V @ 250µA	56 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Surface Mount