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庫存類別供應商排名	庫存所在位置	型號 / 製造商 / 其他	庫存量	生產年份/批號	最低訂貨數量 / 後續訂購數量	預定出貨日	資訊核友管理編號	Manufacturer	Series	FET Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Operating Temperature Range	Mounting Type	Device Package	Technology	FET Feature
質量保證 B-1	來自供應商的訂	IRFR6215TRPBF INFINEON	205			預計 11個工作天	核友型號：st75141511	Infineon Technologies	HEXFETR	P-Channel	150V	10V	13A(Tc)	860 pF @ 25 V	110W(Tc)	295mOhms @ 6.6A, 10V	4V @ 250μA	66 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Surface Mount	TO-252AA (DPAK)	Mosfet (Metal Oxide)
質量保證	來自供應商的訂	IRFR6215TRPBF INFINEON	3,832	25+		預計 16個工作天	核友型號：st60358883	Infineon Technologies	HEXFETR	P-Channel	150V	10V	13A(Tc)	860 pF @ 25 V	110W(Tc)	295mOhms @ 6.6A, 10V	4V @ 250μA	66 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Surface Mount	TO-252AA (DPAK)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFR7440TRPBF INFINEON	1,836			預計 11個工作天	核友型號：st75141512	Infineon Technologies	HEXFETR	N-Channel	40V	6V, 10V	90A(Tc)	4610 pF @ 25 V	140W(Tc)	2.4mOhms @ 90A, 10V	3.9V @ 100μA	134 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Surface Mount	PG-TO252-3	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFR7440TRPBF INFINEON TECHNOLOGIES	2,000		MOQ : 2,000 SPQ : 1	預計 11個工作天	核友型號：st70647322	Infineon Technologies	HEXFETR	N-Channel	40V	6V, 10V	90A(Tc)	4610 pF @ 25 V	140W(Tc)	2.4mOhms @ 90A, 10V	3.9V @ 100μA	134 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Surface Mount	PG-TO252-3	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFR7446TRPBF INFINEON	10			預計 11個工作天	核友型號：st75141513	Infineon Technologies	HEXFETR, StrongIRFET?	N-Channel	40V	6V, 10V	56A(Tc)	3150 pF @ 25 V	98W(Tc)	3.9mOhms @ 56A, 10V	3.9V @ 100μA	130 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Surface Mount	TO-252AA (DPAK)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFR7446TRPBF INFINEON	19,057	18+		預計 11個工作天	核友型號：st71361807	Infineon Technologies	HEXFETR, StrongIRFET?	N-Channel	40V	6V, 10V	56A(Tc)	3150 pF @ 25 V	98W(Tc)	3.9mOhms @ 56A, 10V	3.9V @ 100μA	130 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Surface Mount	TO-252AA (DPAK)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFR7446TRPBF INFINEON	10,000	21+		預計 16個工作天	核友型號：st76078904	Infineon Technologies	HEXFETR, StrongIRFET?	N-Channel	40V	6V, 10V	56A(Tc)	3150 pF @ 25 V	98W(Tc)	3.9mOhms @ 56A, 10V	3.9V @ 100μA	130 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Surface Mount	TO-252AA (DPAK)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFR7540TRPBF INFINEON	32,555	22+		預計 16個工作天	核友型號：st76078905	Infineon Technologies	StrongIRFET?	N-Channel	60V	6V, 10V	90A(Tc)	4360 pF @ 25 V	140W(Tc)	4.8mOhms @ 66A, 10V	3.7V @ 100μA	130 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Surface Mount	TO-252AA (DPAK)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFR7540TRPBF INFINEON TECHNOLOGIES	2,000		MOQ : 2,000 SPQ : 1	預計 11個工作天	核友型號：st72742495	Infineon Technologies	StrongIRFET?	N-Channel	60V	6V, 10V	90A(Tc)	4360 pF @ 25 V	140W(Tc)	4.8mOhms @ 66A, 10V	3.7V @ 100μA	130 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Surface Mount	TO-252AA (DPAK)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFR7546TRPBF INFINEON	131			預計 11個工作天	核友型號：st75141514	Infineon Technologies	StrongIRFET?	N-Channel	60V	6V, 10V	56A(Tc)	3020 pF @ 25 V	99W(Tc)	7.9mOhms @ 43A, 10V	3.7V @ 100μA	87 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Surface Mount	DPAK	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFR825TRPBF INFINEON	34			預計 11個工作天	核友型號：st75141515	Infineon Technologies	HEXFETR	N-Channel	500V	10V	6A(Tc)	1346 pF @ 25 V	119W(Tc)	1.3Ohms @ 3.7A, 10V	5V @ 250μA	34 nC @ 10 V	±20V	-55°C ~ 150°C(TJ)	Surface Mount	TO-252AA (DPAK)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFR8314TRPBF INFINEON	13			預計 11個工作天	核友型號：st75141516	Infineon Technologies	HEXFETR	N-Channel	30V	4.5V, 10V	90A(Tc)	4945 pF @ 15 V	125W(Tc)	2.2mOhms @ 90A, 10V	2.2V @ 100μA	54 nC @ 4.5 V	±20V	-55°C ~ 175°C(TJ)	Surface Mount	TO-252AA (DPAK)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFR9014 INTERNATIONAL RECTIFIER	775			預計 11個工作天	核友型號：st65341012	INTERNATIONAL RECTIFIER		P-Channel	60V	10V	5.1A(Tc)	270 pF @ 25 V	2.5W(Ta), 25W(Tc)	500mOhms @ 3.1A, 10V	4V @ 250μA	12 nC @ 10 V	±20V	-55°C ~ 150°C(TJ)	Surface Mount	DPAK	Mosfet (Metal Oxide)	Standard
質量保證 B-1	來自供應商的訂	IRFR9024 INTERNATIONAL RECTIFIER	75	98		預計 11個工作天	核友型號：st65395809	INTERNATIONAL RECTIFIER		P-Channel	60V	10V	8.8A(Tc)	570 pF @ 25 V	2.5W(Ta), 42W(Tc)	280mOhms @ 5.3A, 10V	4V @ 250μA	19 nC @ 10 V	±20V	-55°C ~ 150°C(TJ)	Surface Mount	DPAK	Mosfet (Metal Oxide)	Standard
質量保證 B-1	來自供應商的訂	IRFR9024NPBF INTERNATIONAL RECTIFIER	100	10		預計 11個工作天	核友型號：st65365301	INTERNATIONAL RECTIFIER	HEXFETR	P-Channel	55V	10V	11A(Tc)	350 pF @ 25 V	38W(Tc)	175mOhms @ 6.6A, 10V	4V @ 250μA	19 nC @ 10 V	±20V	-55°C ~ 150°C(TJ)	Surface Mount	TO-252AA (DPAK)	Mosfet (Metal Oxide)	Standard
質量保證 B-1	來自供應商的訂	IRFR9024NTRLPBF INFINEON	91			預計 11個工作天	核友型號：st75141518	Infineon Technologies	HEXFETR	P-Channel	55V	10V	11A(Tc)	350 pF @ 25 V	38W(Tc)	175mOhms @ 6.6A, 10V	4V @ 250μA	19 nC @ 10 V	±20V	-55°C ~ 150°C(TJ)	Surface Mount	TO-252AA (DPAK)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFR9024NTRPBF INFINEON	17,058			預計 11個工作天	核友型號：st75141519	Infineon Technologies	HEXFETR	P-Channel	55V	10V	11A(Tc)	350 pF @ 25 V	38W(Tc)	175mOhms @ 6.6A, 10V	4V @ 250μA	19 nC @ 10 V	±20V	-55°C ~ 150°C(TJ)	Surface Mount	TO-252AA (DPAK)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFR9024NTRPBF INFINEON	100,000	25+		預計 16個工作天	核友型號：st61363137	Infineon Technologies	HEXFETR	P-Channel	55V	10V	11A(Tc)	350 pF @ 25 V	38W(Tc)	175mOhms @ 6.6A, 10V	4V @ 250μA	19 nC @ 10 V	±20V	-55°C ~ 150°C(TJ)	Surface Mount	TO-252AA (DPAK)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFR9110 INTERNATIONAL RECTIFIER	2,983	01+		預計 11個工作天	核友型號：st65432407	INTERNATIONAL RECTIFIER		P-Channel	100V	10V	3.1A(Tc)	200 pF @ 25 V	2.5W(Ta), 25W(Tc)	1.2Ohms @ 1.9A, 10V	4V @ 250μA	8.7 nC @ 10 V	±20V	-55°C ~ 150°C(TJ)	Surface Mount	TO-252AA (DPAK)	Mosfet (Metal Oxide)	Standard
質量保證 B-1	來自供應商的訂	IRFR9120NTRLPBF INFINEON	50			預計 11個工作天	核友型號：st75141520	Infineon Technologies	HEXFETR	P-Channel	100V	10V	6.6A(Tc)	350 pF @ 25 V	40W(Tc)	480mOhms @ 3.9A, 10V	4V @ 250μA	27 nC @ 10 V	±20V	-55°C ~ 150°C(TJ)	Surface Mount	TO-252AA (DPAK)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFR9120NTRPBF INFINEON	500			預計 11個工作天	核友型號：st75141521	Infineon Technologies	HEXFETR	P-Channel	100V	10V	6.6A(Tc)	350 pF @ 25 V	40W(Tc)	480mOhms @ 3.9A, 10V	4V @ 250μA	27 nC @ 10 V	±20V	-55°C ~ 150°C(TJ)	Surface Mount	TO-252AA (DPAK)	Mosfet (Metal Oxide)
質量保證	來自供應商的訂	IRFR9120NTRPBF INFINEON	41,320	23+		預計 16個工作天	核友型號：st60358888	Infineon Technologies	HEXFETR	P-Channel	100V	10V	6.6A(Tc)	350 pF @ 25 V	40W(Tc)	480mOhms @ 3.9A, 10V	4V @ 250μA	27 nC @ 10 V	±20V	-55°C ~ 150°C(TJ)	Surface Mount	TO-252AA (DPAK)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFR9120NTRPBF INFINEON TECHNOLOGIES	50	25+		預計 11個工作天	核友型號：st75027753	Infineon Technologies	HEXFETR	P-Channel	100V	10V	6.6A(Tc)	350 pF @ 25 V	40W(Tc)	480mOhms @ 3.9A, 10V	4V @ 250μA	27 nC @ 10 V	±20V	-55°C ~ 150°C(TJ)	Surface Mount	TO-252AA (DPAK)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFR9120NTRPBF INFINEON TECHNOLOGIES	2,000		MOQ : 2,000 SPQ : 1	預計 11個工作天	核友型號：st72742496	Infineon Technologies	HEXFETR	P-Channel	100V	10V	6.6A(Tc)	350 pF @ 25 V	40W(Tc)	480mOhms @ 3.9A, 10V	4V @ 250μA	27 nC @ 10 V	±20V	-55°C ~ 150°C(TJ)	Surface Mount	TO-252AA (DPAK)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFS3006TRLPBF INFINEON	3			預計 11個工作天	核友型號：st75141527	Infineon Technologies	HEXFETR	N-Channel	60V	10V	195A(Tc)	8970 pF @ 50 V	375W(Tc)	2.5mOhms @ 170A, 10V	4V @ 250μA	300 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Surface Mount	D2PAK	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂海外位置	IRFS3006TRLPBF INFINEON	2,000	25+		預計 16個工作天	核友型號：st49404671	Infineon Technologies	HEXFETR	N-Channel	60V	10V	195A(Tc)	8970 pF @ 50 V	375W(Tc)	2.5mOhms @ 170A, 10V	4V @ 250μA	300 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Surface Mount	D2PAK	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFS3107PBF INFINEON	7			預計 11個工作天	核友型號：st75141528	Infineon Technologies	HEXFETR	N-Channel	75V	10V	195A(Tc)	9370 pF @ 50 V	370W(Tc)	3mOhms @ 140A, 10V	4V @ 250μA	240 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Surface Mount	D2PAK	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFS3107TRLPBF INFINEON	2			預計 11個工作天	核友型號：st75141529	Infineon Technologies	HEXFETR	N-Channel	75V	10V	195A(Tc)	9370 pF @ 50 V	370W(Tc)	3mOhms @ 140A, 10V	4V @ 250μA	240 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Surface Mount	D2PAK	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFS3206TRRPBF INFINEON	3			預計 11個工作天	核友型號：st75141530	Infineon Technologies	HEXFETR	N-Channel	60V	10V	120A(Tc)	6540 pF @ 50 V	300W(Tc)	3mOhms @ 75A, 10V	4V @ 150μA	170 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Surface Mount	D2PAK	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFS3206TRRPBF INFINEON	4,000	20+		預計 11個工作天	核友型號：st71361809	Infineon Technologies	HEXFETR	N-Channel	60V	10V	120A(Tc)	6540 pF @ 50 V	300W(Tc)	3mOhms @ 75A, 10V	4V @ 150μA	170 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Surface Mount	D2PAK	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂海外位置	IRFS3206TRRPBF INFINEON	2,000	21+		預計 16個工作天	核友型號：st49404674	Infineon Technologies	HEXFETR	N-Channel	60V	10V	120A(Tc)	6540 pF @ 50 V	300W(Tc)	3mOhms @ 75A, 10V	4V @ 150μA	170 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Surface Mount	D2PAK	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFS3306TRLPBF INFINEON	10			預計 11個工作天	核友型號：st75141531	Infineon Technologies	HEXFETR	N-Channel	60V	10V	120A(Tc)	4520 pF @ 50 V	230W(Tc)	4.2mOhms @ 75A, 10V	4V @ 150μA	120 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Surface Mount	D2PAK	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFS3306TRLPBF INFINEON	6,400	23+		預計 16個工作天	核友型號：st76078906	Infineon Technologies	HEXFETR	N-Channel	60V	10V	120A(Tc)	4520 pF @ 50 V	230W(Tc)	4.2mOhms @ 75A, 10V	4V @ 150μA	120 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Surface Mount	D2PAK	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFS3306TRLPBF INFINEON	5,600	21+		預計 11個工作天	核友型號：st71361810	Infineon Technologies	HEXFETR	N-Channel	60V	10V	120A(Tc)	4520 pF @ 50 V	230W(Tc)	4.2mOhms @ 75A, 10V	4V @ 150μA	120 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Surface Mount	D2PAK	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂海外位置	IRFS3306TRLPBF INFINEON	46,000	17+		預計 11個工作天	核友型號：st48154574	Infineon Technologies	HEXFETR	N-Channel	60V	10V	120A(Tc)	4520 pF @ 50 V	230W(Tc)	4.2mOhms @ 75A, 10V	4V @ 150μA	120 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Surface Mount	D2PAK	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFS3307ZTRLPBF INFINEON	12			預計 11個工作天	核友型號：st75141532	Infineon Technologies	HEXFETR	N-Channel	75V	10V	120A(Tc)	4750 pF @ 50 V	230W(Tc)	5.8mOhms @ 75A, 10V	4V @ 150μA	110 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Surface Mount	D2PAK	Mosfet (Metal Oxide)