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库存类别供应商排名	库存所在位置	型号 / 制造商 / 其他	库存量	生产批次	最低订货数量 / 后续订购数量	预定出货日	资讯核友型号	Manufacturer	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Operating Temperature Range	Applications	Mounting Type	Device Package
質量保證 B-1	来自供应商的订	IRLR8256TRPBF INFINEON	34			Approx. 11 days	核友型号：st75141729	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	25V	4.5V, 10V	81A (Tc)	1470 pF @ 13 V	63W(Tc)	5.7mOhms @ 25A, 10V	2.35V @ 25µA	15 nC @ 4.5 V	±20V	-55°C ~ 175°C (TJ)		Surface Mount	TO-252AA (DPAK)
質量保證 B-1	来自供应商的订	IRLR8259TRPBF INFINEON	51			Approx. 11 days	核友型号：st75141730	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	25V	4.5V, 10V	57A(Tc)	900 pF @ 13 V	48W (Tc)	8.7mOhms @ 21A, 10V	2.35V @ 25µA	10 nC @ 4.5 V	±20V	-55°C ~ 175°C (TJ)		Surface Mount	TO-252AA (DPAK)
質量保證 B-1	来自供应商的订	IRLR8726TRLPBF INFINEON	48			Approx. 11 days	核友型号：st75141731	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	30V	4.5V, 10V	86A (Tc)	2150 pF @ 15 V	75W (Tc)	5.8mOhm @ 25A, 10V	2.35V @ 50µA	23 nC @ 4.5 V	±20V	-55°C ~ 175°C (TJ)		Surface Mount	TO-252AA (DPAK)
質量保證 B-1	来自供应商的订	IRLR8726TRLPBF INFINEON	17,470	20+		Approx. 11 days	核友型号：st71361854	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	30V	4.5V, 10V	86A (Tc)	2150 pF @ 15 V	75W (Tc)	5.8mOhm @ 25A, 10V	2.35V @ 50µA	23 nC @ 4.5 V	±20V	-55°C ~ 175°C (TJ)		Surface Mount	TO-252AA (DPAK)
質量保證 B-1	来自供应商的订	IRLR8726TRPBF INFINEON	5			Approx. 11 days	核友型号：st75141732	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	30V	4.5V, 10V	86A (Tc)	2150 pF @ 15 V	75W (Tc)	5.8mOhm @ 25A, 10V	2.35V @ 50µA	23 nC @ 4.5 V	±20V	-55°C ~ 175°C (TJ)		Surface Mount	TO-252AA (DPAK)
質量保證 B-2	来自供应商的订	IRLR8726TRPBF INFINEON	32,201	22/23+	MOQ : 1,000 SPQ : 1	Approx. 11 days	核友型号：st76429221	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	30V	4.5V, 10V	86A (Tc)	2150 pF @ 15 V	75W (Tc)	5.8mOhm @ 25A, 10V	2.35V @ 50µA	23 nC @ 4.5 V	±20V	-55°C ~ 175°C (TJ)		Surface Mount	TO-252AA (DPAK)
質量保證 B-1	来自供应商的订海外位置	IRLR8726TRPBF INFINEON	72,000	24+		Approx. 16 days	核友型号：st49404822	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	30V	4.5V, 10V	86A (Tc)	2150 pF @ 15 V	75W (Tc)	5.8mOhm @ 25A, 10V	2.35V @ 50µA	23 nC @ 4.5 V	±20V	-55°C ~ 175°C (TJ)		Surface Mount	TO-252AA (DPAK)
質量保證 B-2	来自供应商的订	IRLR8726TRPBF INFINEON TECHNOLOGIES	24,175	N/A	MOQ : 2,000 SPQ : 2,000	Approx. 16 days	核友型号：st76681797	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	30V	4.5V, 10V	86A (Tc)	2150 pF @ 15 V	75W (Tc)	5.8mOhm @ 25A, 10V	2.35V @ 50µA	23 nC @ 4.5 V	±20V	-55°C ~ 175°C (TJ)		Surface Mount	TO-252AA (DPAK)
質量保證 B-1	来自供应商的订	IRLR8743TRPBF INFINEON	3,052	24+		Approx. 16 days	核友型号：st76078926	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	30V	4.5V, 10V	160A(Tc)	4880 pF @ 15 V	150°C (TJ)	3.1mOhms @ 25A, 10V	2.35V @ 100µA	59 nC @ 4.5 V	±20V	-55°C ~ 175°C (TJ)		Surface Mount	TO-252AA (DPAK)
質量保證 B-1	来自供应商的订	IRLR8743TRPBF INFINEON	4,000	20+		Approx. 11 days	核友型号：st71361855	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	30V	4.5V, 10V	160A(Tc)	4880 pF @ 15 V	150°C (TJ)	3.1mOhms @ 25A, 10V	2.35V @ 100µA	59 nC @ 4.5 V	±20V	-55°C ~ 175°C (TJ)		Surface Mount	TO-252AA (DPAK)
質量保證 B-2	来自供应商的订	IRLR8743TRPBF INFINEON	58,405	22+	MOQ : 1,000 SPQ : 1	Approx. 11 days	核友型号：st76431582	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	30V	4.5V, 10V	160A(Tc)	4880 pF @ 15 V	150°C (TJ)	3.1mOhms @ 25A, 10V	2.35V @ 100µA	59 nC @ 4.5 V	±20V	-55°C ~ 175°C (TJ)		Surface Mount	TO-252AA (DPAK)
質量保證 B-1	来自供应商的订	IRLR9343TRPBF INFINEON	14			Approx. 11 days	核友型号：st75141734	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	55V	4.5V, 10V	20A (Tc)	660 pF @ 50 V	79W (Tc)	105mOhms @ 3.4A, 10V	1V @ 250µA	47 nC @ 10 V	±20V	-40°C ~ 175°C(TJ)		Surface Mount	PG-TO252-3
質量保證 B-1	来自供应商的订	IRLR9343TRPBF INFINEON	7,700	25+		Approx. 16 days	核友型号：st76078927	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	55V	4.5V, 10V	20A (Tc)	660 pF @ 50 V	79W (Tc)	105mOhms @ 3.4A, 10V	1V @ 250µA	47 nC @ 10 V	±20V	-40°C ~ 175°C(TJ)		Surface Mount	PG-TO252-3
質量保證 B-2	来自供应商的订	IRLR9343TRPBF INFINEON	2,548	22+	MOQ : 1,000 SPQ : 1	Approx. 11 days	核友型号：st76439300	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	55V	4.5V, 10V	20A (Tc)	660 pF @ 50 V	79W (Tc)	105mOhms @ 3.4A, 10V	1V @ 250µA	47 nC @ 10 V	±20V	-40°C ~ 175°C(TJ)		Surface Mount	PG-TO252-3
質量保證 B-2	来自供应商的订	IRLR9343TRPBF INFINEON TECHNOLOGIES	2,000	N/A	MOQ : 2,000 SPQ : 2,000	Approx. 16 days	核友型号：st76681798	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	55V	4.5V, 10V	20A (Tc)	660 pF @ 50 V	79W (Tc)	105mOhms @ 3.4A, 10V	1V @ 250µA	47 nC @ 10 V	±20V	-40°C ~ 175°C(TJ)		Surface Mount	PG-TO252-3
質量保證 B-1	来自供应商的订	IRLS3034PBF INFINEON	8			Approx. 11 days	核友型号：st75141735	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	40V	4.5V, 10V	195A(Tc)	10315 pF @ 25 V	375W(Tc)	1.7mOhms @ 195A, 10V	2.5V @ 250µA	162 nC @ 4.5 V	±20V	-55°C ~ 175°C (TJ)		Surface Mount	D2PAK
質量保證 B-1	来自供应商的订	IRLS3034TRL7PP INFINEON	4			Approx. 11 days	核友型号：st75141736	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	40V	4.5V, 10V	240A(Tc)	10990 pF @ 40 V	380W(Tc)	1.4mOhms @ 200A, 10V	2.5V @ 250µA	180 nC @ 4.5 V	±20V			Surface Mount	D2PAK(7-Lead)
質量保證 B-2	来自供应商的订	IRLS3034TRLPBF INFINEON	4,788	22/23+	MOQ : 100 SPQ : 1	Approx. 11 days	核友型号：st76525058	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	40V	4.5V, 10V	195A(Tc)	10315 pF @ 25 V	375W(Tc)	1.7mOhms @ 195A, 10V	2.5V @ 250µA	162 nC @ 4.5 V	±20V	-55°C ~ 175°C (TJ)		Surface Mount	D2PAK
質量保證 B-2	来自供应商的订	IRLS3036TRL7PP INFINEON	1,329	22/23+	MOQ : 250 SPQ : 1	Approx. 11 days	核友型号：st76518201	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	60V	4.5V, 10V	240A(Tc)	11270 pF @ 50 V	380W(Tc)	1.9mOhms @ 180A, 10V	2.5V @ 250µA	160 nC @ 4.5 V	±16V	-55°C ~ 175°C (TJ)		Surface Mount	D2PAK(7-Lead)
質量保證 B-1	来自供应商的订	IRLS3036TRLPBF INFINEON	2,019	23+		Approx. 16 days	核友型号：st76078928	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	60V	4.5V, 10V	195A(Tc)	11210 pF @ 50 V	380W(Tc)	2.4mOhms @ 165A, 10V	2.5V @ 250µA	140 nC @ 4.5 V	±16V	-55°C ~ 175°C (TJ)		Surface Mount	D2PAK
質量保證 B-1	来自供应商的订	IRLS3036TRLPBF INFINEON	2,400	24+		Approx. 11 days	核友型号：st75021808	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	60V	4.5V, 10V	195A(Tc)	11210 pF @ 50 V	380W(Tc)	2.4mOhms @ 165A, 10V	2.5V @ 250µA	140 nC @ 4.5 V	±16V	-55°C ~ 175°C (TJ)		Surface Mount	D2PAK
質量保證 B-2	来自供应商的订	IRLS3036TRLPBF INFINEON	5,000	22+	MOQ : 500 SPQ : 1	Approx. 11 days	核友型号：st76497490	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	60V	4.5V, 10V	195A(Tc)	11210 pF @ 50 V	380W(Tc)	2.4mOhms @ 165A, 10V	2.5V @ 250µA	140 nC @ 4.5 V	±16V	-55°C ~ 175°C (TJ)		Surface Mount	D2PAK
質量保證 B-1	来自供应商的订	IRLS4030TRL7PP INFINEON	14			Approx. 11 days	核友型号：st75141737	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	4.5V, 10V	190A(Tc)	11490 pF @ 50 V	-55°C ~ 150°C (TJ)	3.9mOhms @ 110A, 10V	2.5V @ 250µA	140 nC @ 4.5 V	±16V	-55°C ~ 175°C (TJ)		Surface Mount	D2PAK(7-Lead)
質量保證 B-1	来自供应商的订	IRLS4030TRLPBF INFINEON	6,015	24+		Approx. 16 days	核友型号：st76078929	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	4.5V, 10V	180A (Tc)	11360 pF @ 50 V	-55°C ~ 150°C (TJ)	4.3mOhms @ 110A, 10V	2.5V @ 250µA	130 nC @ 4.5 V	±16V	-55°C ~ 175°C (TJ)		Surface Mount	D2PAK
質量保證 B-2	来自供应商的订	IRLTS6342TRPBF INFINEON	175	22+	MOQ : 175 SPQ : 1	Approx. 11 days	核友型号：st76375954	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	30V	2.5V, 4.5V	8.3A(TA)	1010 pF @ 25 V	2W (Ta)	17.5mOhms @ 8.3A, 4.5V	1.1V @ 10µA	11 nC @ 4.5 V	±12V	-55°C ~ 150°C (TJ)		Surface Mount	6-TSOP
質量保證 B-1	来自供应商的订	IRLTS6342TRPBF INFINEON	118			Approx. 11 days	核友型号：st75141738	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	30V	2.5V, 4.5V	8.3A(TA)	1010 pF @ 25 V	2W (Ta)	17.5mOhms @ 8.3A, 4.5V	1.1V @ 10µA	11 nC @ 4.5 V	±12V	-55°C ~ 150°C (TJ)		Surface Mount	6-TSOP
質量保證 B-1	来自供应商的订	IRLTS6342TRPBF INFINEON	1,186	22+		Approx. 16 days	核友型号：st76078930	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	30V	2.5V, 4.5V	8.3A(TA)	1010 pF @ 25 V	2W (Ta)	17.5mOhms @ 8.3A, 4.5V	1.1V @ 10µA	11 nC @ 4.5 V	±12V	-55°C ~ 150°C (TJ)		Surface Mount	6-TSOP
質量保證 B-2	来自供应商的订	IRLU024NPBF INFINEON	20,000	21+	MOQ : 3,000 SPQ : 1	Approx. 11 days	核友型号：st76375955	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	4V, 10V	17A (Tc)	480 pF @ 25 V	45W (Tc)	65mOhm @ 10A, 10V	2V @ 250µA	15 nC @ 5 V	±16V	-55°C ~ 175°C (TJ)		Through Hole	IPAK (TO-251AA)
質量保證 B-1	来自供应商的订	IRLU024NPBF INFINEON	14,400	22+		Approx. 16 days	核友型号：st61363143	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	4V, 10V	17A (Tc)	480 pF @ 25 V	45W (Tc)	65mOhm @ 10A, 10V	2V @ 250µA	15 nC @ 5 V	±16V	-55°C ~ 175°C (TJ)		Through Hole	IPAK (TO-251AA)
質量保證 B-1	来自供应商的订	IRLU024NPBF INFINEON	125	2205		Approx. 7 days	核友型号：st68904234	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	4V, 10V	17A (Tc)	480 pF @ 25 V	45W (Tc)	65mOhm @ 10A, 10V	2V @ 250µA	15 nC @ 5 V	±16V	-55°C ~ 175°C (TJ)		Through Hole	IPAK (TO-251AA)
質量保證 B-1	来自供应商的订	IRLU024NPBF INFINEON	5,014	18+		Approx. 11 days	核友型号：st71361856	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	4V, 10V	17A (Tc)	480 pF @ 25 V	45W (Tc)	65mOhm @ 10A, 10V	2V @ 250µA	15 nC @ 5 V	±16V	-55°C ~ 175°C (TJ)		Through Hole	IPAK (TO-251AA)
質量保證 B-1	来自供应商的订	IRLU120NPBF INFINEON	8			Approx. 11 days	核友型号：st75141739	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	4V, 10V	10A (Tc)	440 pF @ 25 V	48W (Tc)	185mOhms @ 6A, 10V	2V @ 250µA	20 nC @ 5 V	±16V	-55°C ~ 175°C (TJ)		Through Hole	IPAK (TO-251AA)
質量保證 B-2	来自供应商的订	IRLU3410PBF INFINEON	3,000	22/25+	MOQ : 3,000 SPQ : 1	Approx. 11 days	核友型号：st76367820	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	4V, 10V	17A (Tc)	800 pF @ 25 V	79W (Tc)	105mOhm @ 10A, 10V	2V @ 250µA	34 nC @ 5 V	±16V	-55°C ~ 175°C (TJ)		Through Hole	IPAK (TO-251AA)
質量保證 B-1	来自供应商的订	IRLU3636PBF INFINEON	10			Approx. 11 days	核友型号：st75141740	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	60V	4.5V, 10V	50A (Tc)	3779 pF @ 50 V	143W(Tc)	6.8mOhms @ 50A, 10V	2.5V @ 100µA	49 nC @ 4.5 V	±16V	-55°C ~ 175°C (TJ)		Through Hole	IPAK
質量保證 B-1	来自供应商的订	IRLU9343PBF INFINEON	30			Approx. 11 days	核友型号：st75141741	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	55V		20A (Tc)	660 pF @ 50 V		105mOhms @ 3.4A, 10V	1V @ 250µA	47 nC @ 10 V				Through Hole	IPAK
質量保證 B-1	来自供应商的订	IRLZ24NSTRLPBF INFINEON	1			Approx. 11 days	核友型号：st75141742	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	4V, 10V	18A (Tc)	480 pF @ 25 V	3.8W(Ta), 45W(Tc)	60mOhms @ 11A, 10V	2V @ 250µA	15 nC @ 5 V	±16V	-55°C ~ 175°C (TJ)		Surface Mount	D2PAK
質量保證 B-1	来自供应商的订	IRLZ34NPBF INFINEON	181			Approx. 11 days	核友型号：st75141743	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	4V, 10V	30A (Tc)	880 pF @ 25 V	68W (Tc)	35mOhms @ 16A, 10V	2V @ 250µA	25 nC @ 5 V	±16V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB
質量保證 B-2	来自供应商的订	IRLZ34NPBF INFINEON	2,487	22+	MOQ : 1,000 SPQ : 1	Approx. 11 days	核友型号：st76431583	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	4V, 10V	30A (Tc)	880 pF @ 25 V	68W (Tc)	35mOhms @ 16A, 10V	2V @ 250µA	25 nC @ 5 V	±16V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB
質量保證 B-1	来自供应商的订	IRLZ34NSTRLPBF INFINEON	10			Approx. 11 days	核友型号：st75141744	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	4V, 10V	30A (Tc)	880 pF @ 25 V	3.8W(Ta), 68W(Tc)	35mOhms @ 16A, 10V	2V @ 250µA	25 nC @ 5 V	±16V	-55°C ~ 175°C (TJ)		Surface Mount	D2PAK
質量保證 B-1	来自供应商的订	IRLZ44NPBF INFINEON	58			Approx. 11 days	核友型号：st75141745	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	4V, 10V	47A (Tc)	1700 pF @ 25 V	3.8W(Ta), 110W(Tc)	22mOhms @ 25A, 10V	2V @ 250µA	48 nC @ 5 V	±16V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB
質量保證 B-1	来自供应商的订	IRLZ44NPBF INFINEON	10	25+		Approx. 11 days	核友型号：st75027058	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	4V, 10V	47A (Tc)	1700 pF @ 25 V	3.8W(Ta), 110W(Tc)	22mOhms @ 25A, 10V	2V @ 250µA	48 nC @ 5 V	±16V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB
質量保證 B-1	来自供应商的订	IRLZ44NPBF INTERNATIONAL RECTIFIER	3	1423		Approx. 7 days	核友型号：st68904242	INTERNATIONAL RECTIFIER	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	4V, 10V	47A (Tc)	1700 pF @ 25 V	3.8W(Ta), 110W(Tc)	22mOhms @ 25A, 10V	2V @ 250µA	48 nC @ 5 V	±16V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB
質量保證 B-1	来自供应商的订	IRLZ44NSTRLPBF INFINEON	7			Approx. 11 days	核友型号：st75141746	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	4V, 10V	47A (Tc)	1700 pF @ 25 V	3.8W(Ta), 110W(Tc)	22mOhms @ 25A, 10V	2V @ 250µA	48 nC @ 5 V	±16V	-55°C ~ 175°C (TJ)		Surface Mount	D2PAK
質量保證 B-1	来自供应商的订	ISC007N04NM6ATMA1 INFINEON	17			Approx. 11 days	核友型号：st75142354	Infineon Technologies	OptiMOS™ 6	N-Channel	MOSFET (Metal Oxide)	40V	6V, 10V	48A(TA), 381A(Tc)	8400 pF @ 20 V	3W(Ta), 188W(Tc)	0.7mOhms @ 50A, 10V	2.8V @ 1.05mA	117 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Surface Mount	PG-TDSON-8 FL
質量保證 B-2	来自供应商的订	ISC007N04NM6ATMA1 INFINEON	2,988	22/23+	MOQ : 100 SPQ : 1	Approx. 11 days	核友型号：st76525687	Infineon Technologies	OptiMOS™ 6	N-Channel	MOSFET (Metal Oxide)	40V	6V, 10V	48A(TA), 381A(Tc)	8400 pF @ 20 V	3W(Ta), 188W(Tc)	0.7mOhms @ 50A, 10V	2.8V @ 1.05mA	117 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Surface Mount	PG-TDSON-8 FL
質量保證 B-2	来自供应商的订	ISC011N06LM5ATMA1 INFINEON	9,663	22/23+	MOQ : 100 SPQ : 1	Approx. 11 days	核友型号：st76543057	Infineon Technologies	OptiMOS™	N-Channel	MOSFET (Metal Oxide)	60V	4.5V, 10V	37A(TA), 288A(Tc)	11000 pF @ 30 V	3W(Ta), 188W(Tc)	1.15mOhms @ 50A, 10V	2.3V @ 116µA	170 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Surface Mount	PG-TDSON-8-17
質量保證 B-2	来自供应商的订	ISC012N04LM6ATMA1 INFINEON	24,495	22/23+	MOQ : 250 SPQ : 1	Approx. 11 days	核友型号：st76511894	Infineon Technologies	OptiMOS™ 6	N-Channel	MOSFET (Metal Oxide)	40V	4.5V, 10V	37A(TA), 238A(Tc)	4600 pF @ 20 V	3W(Ta), 125W(Tc)	1.2mOhms @ 50A, 10V	2.3V @ 250µA	64 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Surface Mount	PG-TDSON-8 FL
質量保證 B-1	来自供应商的订	ISC015N04NM5ATMA1 INFINEON	10			Approx. 11 days	核友型号：st75142355	Infineon Technologies	OptiMOS™ 5	N-Channel	MOSFET (Metal Oxide)	40V	7V, 10V	33A(TA), 206A(Tc)	4800 pF @ 20 V	3W(Ta), 115W(Tc)	1.5mOhms @ 50A, 10V	3.4V @ 60µA	67 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Surface Mount	PG-TDSON-8 FL
質量保證 B-2	来自供应商的订	ISC015N04NM5ATMA1 INFINEON	8,262	22/23+	MOQ : 500 SPQ : 1	Approx. 11 days	核友型号：st76499438	Infineon Technologies	OptiMOS™ 5	N-Channel	MOSFET (Metal Oxide)	40V	7V, 10V	33A(TA), 206A(Tc)	4800 pF @ 20 V	3W(Ta), 115W(Tc)	1.5mOhms @ 50A, 10V	3.4V @ 60µA	67 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Surface Mount	PG-TDSON-8 FL
質量保證 B-1	来自供应商的订	ISC017N04NM5 INFINEON	10,000	25+		Approx. 16 days	核友型号：st76078941	Infineon Technologies	OptiMOS™ 5					193A			1.7 mOhms @ 10V	3.4V		3.4V	-55°C ~ 175°C	Industrial		SuperSO8 5x6