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预定出货日 ECAD模型 资讯
核友型号
Manufacturer Series FET Type Drain to Source Voltage (Vdss) Drive Voltage (Max Rds On, Min Rds On) Current - Continuous Drain (Id) @ 25°C Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Operating Temperature Range Applications Automotive Mounting Type Device Package Technology FET Feature
質量保證
B-1
来自供应商的订
海外位置
1,600 1441+  

预计 11个工作日

核友型号:st50307655

Infineon Technologies HEXFETR P-Channel 55V 10V 19A(Tc) 620 pF @ 25 V 3.8W(Ta), 68W(Tc) 100mOhms @ 10A, 10V 4V @ 250μA 35 nC @ 10 V ±20V -55°C ~ 175°C(TJ) Surface Mount D2PAK Mosfet (Metal Oxide)
質量保證
B-1
来自供应商的订
49  

预计 11个工作日

核友型号:st75141316

Infineon Technologies HEXFETR P-Channel 55V 10V 19A(Tc) 620 pF @ 25 V 3.8W(Ta), 68W(Tc) 100mOhms @ 10A, 10V 4V @ 250μA 35 nC @ 10 V ±20V -55°C ~ 175°C(TJ) Surface Mount D2PAK Mosfet (Metal Oxide)
質量保證
B-1
来自供应商的订

IRFB23N15DPBF

IRFB23N15DPBF
INFINEON

26  

预计 11个工作日

核友型号:st75141318

Infineon Technologies HEXFETR N-Channel 150V 10V 23A(Tc) 1200 pF @ 25 V 3.8W(Ta), 136W(Tc) 90mOhms @ 14A, 10V 5.5V @ 250μA 56 nC @ 10 V ±30V -55°C ~ 175°C(TJ) Through Hole TO-220AB Mosfet (Metal Oxide)
質量保證
B-1
来自供应商的订

IRFB260NPBF

IRFB260NPBF
INFINEON

20  

预计 11个工作日

核友型号:st75141319

Infineon Technologies HEXFETR N-Channel 200V 10V 56A(Tc) 4220 pF @ 25 V 380W(Tc) 40mOhms @ 34A, 10V 4V @ 250μA 220 nC @ 10 V ±20V -55°C ~ 175°C(TJ) Through Hole TO-220AB Mosfet (Metal Oxide)
質量保證
B-1
来自供应商的订

IRFB3004PBF

IRFB3004PBF
INFINEON

10  

预计 11个工作日

核友型号:st75141320

Infineon Technologies HEXFETR N-Channel 40V 10V 195A(Tc) 9200 pF @ 25 V 380W(Tc) 1.75mOhms @ 195A, 10V 4V @ 250μA 240 nC @ 10 V ±20V -55°C ~ 175°C(TJ) Through Hole TO-220AB Mosfet (Metal Oxide)
質量保證
B-1
来自供应商的订

IRFB3006GPBF

IRFB3006GPBF
INFINEON

10  

预计 11个工作日

核友型号:st75141321

Infineon Technologies HEXFETR N-Channel 60V 10V 195A(Tc) 8970 pF @ 50 V 375W(Tc) 2.5mOhms @ 170A, 10V 4V @ 250μA 300 nC @ 10 V ±20V -55°C ~ 175°C(TJ) Through Hole TO-220AB Mosfet (Metal Oxide)
質量保證
B-1
来自供应商的订

IRFB3006PBF

IRFB3006PBF
INFINEON

7  

预计 11个工作日

核友型号:st75141322

Infineon Technologies HEXFETR N-Channel 60V 10V 195A(Tc) 8970 pF @ 50 V 375W(Tc) 2.5mOhms @ 170A, 10V 4V @ 250μA 300 nC @ 10 V ±20V -55°C ~ 175°C(TJ) Through Hole TO-220AB Mosfet (Metal Oxide)
質量保證
B-1
来自供应商的订

IRFB3006PBF
INFINEON TECHNOLOGIES

1,000   MOQ : 1,000
SPQ : 1

预计 11个工作日

核友型号:st70647287

Infineon Technologies HEXFETR N-Channel 60V 10V 195A(Tc) 8970 pF @ 50 V 375W(Tc) 2.5mOhms @ 170A, 10V 4V @ 250μA 300 nC @ 10 V ±20V -55°C ~ 175°C(TJ) Through Hole TO-220AB Mosfet (Metal Oxide)
質量保證
B-1
来自供应商的订

IRFB3077PBF

IRFB3077PBF
INFINEON

12,600 20+  

预计 11个工作日

核友型号:st71361775

Infineon Technologies HEXFETR N-Channel 75V 10V 120A(Tc) 9400 pF @ 50 V 370W(Tc) 3.3mOhms @ 75A, 10V 4V @ 250μA 220 nC @ 10 V ±20V -55°C ~ 175°C(TJ) Through Hole TO-220AB Mosfet (Metal Oxide)
質量保證
B-1
来自供应商的订
海外位置

IRFB3077PBF

IRFB3077PBF
INFINEON

9,690 23+  

预计 16个工作日

核友型号:st49404490

Infineon Technologies HEXFETR N-Channel 75V 10V 120A(Tc) 9400 pF @ 50 V 370W(Tc) 3.3mOhms @ 75A, 10V 4V @ 250μA 220 nC @ 10 V ±20V -55°C ~ 175°C(TJ) Through Hole TO-220AB Mosfet (Metal Oxide)
質量保證
B-1
来自供应商的订

IRFB3077PBF

IRFB3077PBF
INFINEON

500  

预计 11个工作日

核友型号:st75141323

Infineon Technologies HEXFETR N-Channel 75V 10V 120A(Tc) 9400 pF @ 50 V 370W(Tc) 3.3mOhms @ 75A, 10V 4V @ 250μA 220 nC @ 10 V ±20V -55°C ~ 175°C(TJ) Through Hole TO-220AB Mosfet (Metal Oxide)
質量保證
B-1
来自供应商的订

IRFB3077PBF
INFINEON TECHNOLOGIES

1,000   MOQ : 1,000
SPQ : 1

预计 11个工作日

核友型号:st72742480

Infineon Technologies HEXFETR N-Channel 75V 10V 120A(Tc) 9400 pF @ 50 V 370W(Tc) 3.3mOhms @ 75A, 10V 4V @ 250μA 220 nC @ 10 V ±20V -55°C ~ 175°C(TJ) Through Hole TO-220AB Mosfet (Metal Oxide)
質量保證
B-2
来自供应商的订

IRFB31N20DPBF

IRFB31N20DPBF
INFINEON

RoHS
53,000 21+   MOQ : 46
SPQ : 1

预计 25个工作日

核友型号:st75577507

Infineon Technologies HEXFETR N-Channel 200V 10V 31A(Tc) 2370 pF @ 25 V 3.1W(Ta), 200W(Tc) 82mOhms @ 18A, 10V 5.5V @ 250μA 107 nC @ 10 V ±30V -55°C ~ 175°C(TJ) Through Hole TO-220AB Mosfet (Metal Oxide)
質量保證
B-1
来自供应商的订

IRFB31N20DPBF

IRFB31N20DPBF
INFINEON

10  

预计 11个工作日

核友型号:st75141324

Infineon Technologies HEXFETR N-Channel 200V 10V 31A(Tc) 2370 pF @ 25 V 3.1W(Ta), 200W(Tc) 82mOhms @ 18A, 10V 5.5V @ 250μA 107 nC @ 10 V ±30V -55°C ~ 175°C(TJ) Through Hole TO-220AB Mosfet (Metal Oxide)
質量保證
B-1
来自供应商的订

IRFB3206PBF
INFINEON TECHNOLOGIES

1,000   MOQ : 1,000
SPQ : 1

预计 11个工作日

核友型号:st72742481

Infineon Technologies HEXFETR N-Channel 60V 10V 120A(Tc) 6540 pF @ 50 V 300W(Tc) 3mOhms @ 75A, 10V 4V @ 150μA 170 nC @ 10 V ±20V -55°C ~ 175°C(TJ) Through Hole TO-220AB Mosfet (Metal Oxide)
質量保證
B-1
来自供应商的订

IRFB3206PBF
INFINEON

2,000 20+  

预计 11个工作日

核友型号:st71361776

Infineon Technologies HEXFETR N-Channel 60V 10V 120A(Tc) 6540 pF @ 50 V 300W(Tc) 3mOhms @ 75A, 10V 4V @ 150μA 170 nC @ 10 V ±20V -55°C ~ 175°C(TJ) Through Hole TO-220AB Mosfet (Metal Oxide)
質量保證
B-1
来自供应商的订

IRFB3206PBF
INFINEON

10  

预计 11个工作日

核友型号:st75141325

Infineon Technologies HEXFETR N-Channel 60V 10V 120A(Tc) 6540 pF @ 50 V 300W(Tc) 3mOhms @ 75A, 10V 4V @ 150μA 170 nC @ 10 V ±20V -55°C ~ 175°C(TJ) Through Hole TO-220AB Mosfet (Metal Oxide)
質量保證
B-1
来自供应商的订

IRFB3207PBF
INFINEON

14,200 20+  

预计 11个工作日

核友型号:st71361777

Infineon Technologies HEXFETR N-Channel 75V 10V 170A(Tc) 7600 pF @ 50 V 330W(Tc) 4.5mOhms @ 75A, 10V 4V @ 250μA 260 nC @ 10 V ±20V -55°C ~ 175°C(TJ) Through Hole TO-220AB Mosfet (Metal Oxide)
質量保證
B-1
来自供应商的订

IRFB3207PBF
INFINEON

10  

预计 11个工作日

核友型号:st75141326

Infineon Technologies HEXFETR N-Channel 75V 10V 170A(Tc) 7600 pF @ 50 V 330W(Tc) 4.5mOhms @ 75A, 10V 4V @ 250μA 260 nC @ 10 V ±20V -55°C ~ 175°C(TJ) Through Hole TO-220AB Mosfet (Metal Oxide)
質量保證
B-1
来自供应商的订

IRFB3207ZPBF

IRFB3207ZPBF
INFINEON

10  

预计 11个工作日

核友型号:st75141327

Infineon Technologies HEXFETR N-Channel 75V 10V 120A(Tc) 6920 pF @ 50 V 300W(Tc) 4.1mOhms @ 75A, 10V 4V @ 150μA 170 nC @ 10 V ±20V -55°C ~ 175°C(TJ) Through Hole TO-220AB Mosfet (Metal Oxide)
質量保證
B-1
来自供应商的订

IRFB3207ZPBF
INFINEON TECHNOLOGIES

1,000   MOQ : 1,000
SPQ : 1

预计 11个工作日

核友型号:st72742482

Infineon Technologies HEXFETR N-Channel 75V 10V 120A(Tc) 6920 pF @ 50 V 300W(Tc) 4.1mOhms @ 75A, 10V 4V @ 150μA 170 nC @ 10 V ±20V -55°C ~ 175°C(TJ) Through Hole TO-220AB Mosfet (Metal Oxide)
質量保證
B-1
来自供应商的订

IRFB3306GPBF

IRFB3306GPBF
INFINEON

50  

预计 11个工作日

核友型号:st75141328

Infineon Technologies HEXFETR N-Channel 60V 10V 120A(Tc) 4520 pF @ 50 V 230W(Tc) 4.2mOhms @ 75A, 10V 4V @ 150μA 120 nC @ 10 V ±20V -55°C ~ 175°C(TJ) Through Hole TO-220AB Mosfet (Metal Oxide)
質量保證
B-1
来自供应商的订

IRFB3306PBF
INFINEON

20,000 21+  

预计 11个工作日

核友型号:st71361778

Infineon Technologies HEXFETR N-Channel 60V 10V 120A(Tc) 4520 pF @ 50 V 230W(Tc) 4.2mOhms @ 75A, 10V 4V @ 150μA 120 nC @ 10 V ±20V -55°C ~ 175°C(TJ) Through Hole TO-220AB Mosfet (Metal Oxide)
質量保證
B-1
来自供应商的订

IRFB3306PBF
INFINEON

330  

预计 11个工作日

核友型号:st75141329

Infineon Technologies HEXFETR N-Channel 60V 10V 120A(Tc) 4520 pF @ 50 V 230W(Tc) 4.2mOhms @ 75A, 10V 4V @ 150μA 120 nC @ 10 V ±20V -55°C ~ 175°C(TJ) Through Hole TO-220AB Mosfet (Metal Oxide)
質量保證
B-1
来自供应商的订

IRFB3307ZPBF
INFINEON TECHNOLOGIES

1,000   MOQ : 1,000
SPQ : 1

预计 11个工作日

核友型号:st72742483

Infineon Technologies HEXFETR N-Channel 75V 10V 120A(Tc) 4750 pF @ 50 V 230W(Tc) 5.8mOhms @ 75A, 10V 4V @ 150μA 110 nC @ 10 V ±20V -55°C ~ 175°C(TJ) Through Hole TO-220AB Mosfet (Metal Oxide)
質量保證
B-1
来自供应商的订

IRFB3307ZPBF
INFINEON

30  

预计 11个工作日

核友型号:st75141330

Infineon Technologies HEXFETR N-Channel 75V 10V 120A(Tc) 4750 pF @ 50 V 230W(Tc) 5.8mOhms @ 75A, 10V 4V @ 150μA 110 nC @ 10 V ±20V -55°C ~ 175°C(TJ) Through Hole TO-220AB Mosfet (Metal Oxide)
質量保證
B-1
来自供应商的订

IRFB3407ZPBF
INFINEON

22  

预计 11个工作日

核友型号:st75141331

Infineon Technologies HEXFETR N-Channel 75V 10V 120A(Tc) 4750 pF @ 50 V 230W(Tc) 6.4mOhms @ 75A, 10V 4V @ 150μA 110 nC @ 10 V ±20V -55°C ~ 175°C(TJ) Through Hole TO-220AB Mosfet (Metal Oxide)
質量保證
B-1
来自供应商的订

IRFB3607PBF

IRFB3607PBF
INFINEON

1,921  

预计 11个工作日

核友型号:st75141332

Infineon Technologies HEXFETR N-Channel 75V 10V 80A(Tc) 3070 pF @ 50 V 140W(Tc) 9mOhms @ 46A, 10V 4V @ 100μA 84 nC @ 10 V ±20V -55°C ~ 175°C(TJ) Through Hole TO-220AB Mosfet (Metal Oxide)
質量保證
B-1
来自供应商的订

IRFB3607PBF

IRFB3607PBF
INFINEON

1,000 2504+  

预计 11个工作日

核友型号:st76085053

Infineon Technologies HEXFETR N-Channel 75V 10V 80A(Tc) 3070 pF @ 50 V 140W(Tc) 9mOhms @ 46A, 10V 4V @ 100μA 84 nC @ 10 V ±20V -55°C ~ 175°C(TJ) Through Hole TO-220AB Mosfet (Metal Oxide)
質量保證
B-1
来自供应商的订

IRFB3607PBF

IRFB3607PBF
INFINEON

3,136 22+  

预计 16个工作日

核友型号:st73655164

Infineon Technologies HEXFETR N-Channel 75V 10V 80A(Tc) 3070 pF @ 50 V 140W(Tc) 9mOhms @ 46A, 10V 4V @ 100μA 84 nC @ 10 V ±20V -55°C ~ 175°C(TJ) Through Hole TO-220AB Mosfet (Metal Oxide)
質量保證
B-1
来自供应商的订

IRFB3607PBF
INFINEON TECHNOLOGIES

1,000   MOQ : 1,000
SPQ : 1

预计 11个工作日

核友型号:st70647288

Infineon Technologies HEXFETR N-Channel 75V 10V 80A(Tc) 3070 pF @ 50 V 140W(Tc) 9mOhms @ 46A, 10V 4V @ 100μA 84 nC @ 10 V ±20V -55°C ~ 175°C(TJ) Through Hole TO-220AB Mosfet (Metal Oxide)
質量保證
B-1
来自供应商的订

IRFB3806PBF

IRFB3806PBF
INFINEON

49  

预计 11个工作日

核友型号:st75141333

Infineon Technologies HEXFETR N-Channel 60V 10V 43A(Tc) 1150 pF @ 50 V 71W(Tc) 15.8mOhms @ 25A, 10V 4V @ 50μA 30 nC @ 10 V ±20V -55°C ~ 175°C(TJ) Through Hole TO-220AB Mosfet (Metal Oxide)
質量保證
B-1
来自供应商的订

IRFB38N20DPBF

IRFB38N20DPBF
INFINEON

500 2435+  

预计 11个工作日

核友型号:st76085054

Infineon Technologies HEXFETR N-Channel 200V 10V 43A(Tc) 2900 pF @ 25 V 3.8W(Ta), 300W(Tc) 54mOhms @ 26A, 10V 5V @ 250μA 91 nC @ 10 V ±20V -55°C ~ 175°C(TJ) Through Hole TO-220AB Mosfet (Metal Oxide) Standard
質量保證
B-1
来自供应商的订

IRFB4019PBF

IRFB4019PBF
INFINEON

10  

预计 11个工作日

核友型号:st75141334

Infineon Technologies N-Channel 150V 10V 17A(Tc) 800 pF @ 50 V 80W(Tc) 95mOhms @ 10A, 10V 4.9V @ 50μA 20 nC @ 10 V ±20V -55°C ~ 175°C(TJ) Through Hole TO-220AB Mosfet (Metal Oxide)
質量保證
B-1
来自供应商的订

IRFB4019PBF

IRFB4019PBF
INFINEON

1,808 22+  

预计 16个工作日

核友型号:st76078882

Infineon Technologies N-Channel 150V 10V 17A(Tc) 800 pF @ 50 V 80W(Tc) 95mOhms @ 10A, 10V 4.9V @ 50μA 20 nC @ 10 V ±20V -55°C ~ 175°C(TJ) Through Hole TO-220AB Mosfet (Metal Oxide)
質量保證
B-1
来自供应商的订

IRFB4020PBF
INFINEON

10  

预计 11个工作日

核友型号:st75141335

Infineon Technologies N-Channel 200V 10V 18A(Tc) 1200 pF @ 50 V 100W(Tc) 100mOhms @ 11A, 10V 4.9V @ 100μA 29 nC @ 10 V ±20V -55°C ~ 175°C(TJ) Through Hole TO-220AB Mosfet (Metal Oxide)
質量保證
B-1
来自供应商的订

IRFB4020PbF
INFINEON

1,000  

预计 8个工作日

核友型号:st66225770

質量保證
B-1
来自供应商的订

IRFB4110PBF
INFINEON TECHNOLOGIES

1,000   MOQ : 1,000
SPQ : 1

预计 11个工作日

核友型号:st70647289

Infineon Technologies HEXFETR N-Channel 100V 10V 120A(Tc) 9620 pF @ 50 V 370W(Tc) 4.5mOhms @ 75A, 10V 4V @ 250μA 210 nC @ 10 V ±20V -55°C ~ 175°C(TJ) Through Hole TO-220AB Mosfet (Metal Oxide)
質量保證
B-1
来自供应商的订

IRFB4110PBF

IRFB4110PBF
INFINEON

5,000  

预计 8个工作日

核友型号:st73247165

Infineon Technologies HEXFETR N-Channel 100V 10V 120A(Tc) 9620 pF @ 50 V 370W(Tc) 4.5mOhms @ 75A, 10V 4V @ 250μA 210 nC @ 10 V ±20V -55°C ~ 175°C(TJ) Through Hole TO-220AB Mosfet (Metal Oxide)
質量保證
B-1
来自供应商的订

IRFB4110PBF

IRFB4110PBF
INFINEON

25  

预计 11个工作日

核友型号:st75141336

Infineon Technologies HEXFETR N-Channel 100V 10V 120A(Tc) 9620 pF @ 50 V 370W(Tc) 4.5mOhms @ 75A, 10V 4V @ 250μA 210 nC @ 10 V ±20V -55°C ~ 175°C(TJ) Through Hole TO-220AB Mosfet (Metal Oxide)
質量保證
B-1
来自供应商的订
海外位置

IRFB4110PBF

IRFB4110PBF
INFINEON

68,000 24+  

预计 16个工作日

核友型号:st49404502

Infineon Technologies HEXFETR N-Channel 100V 10V 120A(Tc) 9620 pF @ 50 V 370W(Tc) 4.5mOhms @ 75A, 10V 4V @ 250μA 210 nC @ 10 V ±20V -55°C ~ 175°C(TJ) Through Hole TO-220AB Mosfet (Metal Oxide)

Recommended Rectifiers - FETs