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库存类别供应商排名	库存所在位置	型号 / 制造商 / 其他	库存量	生产批次	最低订货数量 / 后续订购数量	预定出货日	资讯核友型号	Manufacturer	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Operating Temperature Range	Mounting Type	Device Package
質量保證 B-1	来自供应商的订	IRFS7530TRLPBF INFINEON	25			Approx. 11 days	核友型号：st75141557	Infineon Technologies	HEXFET®, StrongIRFET™	N-Channel	MOSFET (Metal Oxide)	60V	6V, 10V	195A(Tc)	13703 pF @ 25 V	375W(Tc)	2mOhms @ 100A, 10V	3.7V @ 250µA	411 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-2
質量保證 B-2	来自供应商的订	IRFS7530TRLPBF INFINEON	855	22/23+	MOQ : 100 SPQ : 1	Approx. 11 days	核友型号：st76536825	Infineon Technologies	HEXFET®, StrongIRFET™	N-Channel	MOSFET (Metal Oxide)	60V	6V, 10V	195A(Tc)	13703 pF @ 25 V	375W(Tc)	2mOhms @ 100A, 10V	3.7V @ 250µA	411 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-2
質量保證 B-2	来自供应商的订	IRFS7534TRLPBF INFINEON	1,248	22/23+	MOQ : 100 SPQ : 1	Approx. 11 days	核友型号：st76528300	Infineon Technologies	HEXFET®, StrongIRFET™	N-Channel	MOSFET (Metal Oxide)	60V	6V, 10V	195A(Tc)	10034 pF @ 25 V	294W(Tc)	2.4mOhms @ 100A, 10V	3.7V @ 250µA	279 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-7
質量保證 B-1	来自供应商的订	IRFS7537TRLPBF INFINEON	3			Approx. 11 days	核友型号：st75141558	Infineon Technologies	HEXFET®, StrongIRFET™	N-Channel	MOSFET (Metal Oxide)	60V	6V, 10V	173A(Tc)	7020 pF @ 25 V	230W(Tc)	3.3mOhms @ 100A, 10V	3.7V @ 150µA	210 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3
質量保證 B-1	来自供应商的订	IRFS7537TRLPBF INFINEON	7,000	21+		Approx. 11 days	核友型号：st71361818	Infineon Technologies	HEXFET®, StrongIRFET™	N-Channel	MOSFET (Metal Oxide)	60V	6V, 10V	173A(Tc)	7020 pF @ 25 V	230W(Tc)	3.3mOhms @ 100A, 10V	3.7V @ 150µA	210 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3
質量保證 B-2	来自供应商的订	IRFS7540TRLPBF INFINEON	780	22/23+	MOQ : 250 SPQ : 1	Approx. 11 days	核友型号：st76516299	Infineon Technologies	HEXFET®, StrongIRFET™	N-Channel	MOSFET (Metal Oxide)	60V	6V, 10V	110A(Tc)	4555 pF @ 25 V	-55°C ~ 150°C (TJ)	5.1 mOhms @ 65A, 10V	3.7V @ 100µA	130 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3
質量保證 B-1	来自供应商的订	IRFS7730-7PPBF INFINEON	2			Approx. 11 days	核友型号：st75141559	Infineon Technologies	StrongIRFET™	N-Channel	MOSFET (Metal Oxide)	75V	6V, 10V	240A(Tc)	13970 pF @ 25 V	375W(Tc)	2mOhms @ 100A, 10V	3.7V @ 250µA	428 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK(7-Lead)
質量保證 B-1	来自供应商的订	IRFS7730TRL7PP INFINEON	1			Approx. 11 days	核友型号：st75141560	Infineon Technologies	StrongIRFET™	N-Channel	MOSFET (Metal Oxide)	75V	6V, 10V	240A(Tc)	13970 pF @ 25 V	375W(Tc)	2mOhms @ 100A, 10V	3.7V @ 250µA	428 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK(7-Lead)
質量保證 B-1	来自供应商的订	IRFS7730TRLPBF INFINEON	5			Approx. 11 days	核友型号：st75141561	Infineon Technologies	HEXFET®, StrongIRFET™	N-Channel	MOSFET (Metal Oxide)	75V	6V, 10V	195A(Tc)	13660 pF @ 25 V	375W(Tc)	2.6mOhms @ 100A, 10V	3.7V @ 250µA	407 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263AB(D2PAK)
質量保證 B-2	来自供应商的订	IRFS7730TRLPBF INFINEON	10,000	14+	MOQ : 100 SPQ : 1	Approx. 11 days	核友型号：st76490110	Infineon Technologies	HEXFET®, StrongIRFET™	N-Channel	MOSFET (Metal Oxide)	75V	6V, 10V	195A(Tc)	13660 pF @ 25 V	375W(Tc)	2.6mOhms @ 100A, 10V	3.7V @ 250µA	407 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263AB(D2PAK)
質量保證 B-1	来自供应商的订	IRFS7734TRLPBF INFINEON	3			Approx. 11 days	核友型号：st75141562	Infineon Technologies	HEXFET®, StrongIRFET™	N-Channel	MOSFET (Metal Oxide)	75V	6V, 10V	183A(Tc)	10150 pF @ 25 V	290W(Tc)	3.5mOhms @ 100A, 10V	3.7V @ 250µA	270 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3
質量保證 B-2	来自供应商的订	IRFS7734TRLPBF INFINEON	779	22/23+	MOQ : 500 SPQ : 1	Approx. 11 days	核友型号：st76473921	Infineon Technologies	HEXFET®, StrongIRFET™	N-Channel	MOSFET (Metal Oxide)	75V	6V, 10V	183A(Tc)	10150 pF @ 25 V	290W(Tc)	3.5mOhms @ 100A, 10V	3.7V @ 250µA	270 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3
質量保證 B-1	来自供应商的订	IRFS7787TRLPBF INFINEON	10			Approx. 11 days	核友型号：st75141563	Infineon Technologies	HEXFET®, StrongIRFET™	N-Channel	MOSFET (Metal Oxide)	75V	6V, 10V	76A (Tc)	4020 pF @ 25 V	125W (Tc)	8.4mOhms @ 46A, 10V	3.7V @ 100µA	109 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3
質量保證 B-1	来自供应商的订	IRFSL3107PBF INFINEON	10			Approx. 11 days	核友型号：st75141564	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	75V	10V	195A(Tc)	9370 pF @ 50 V	-55°C ~ 150°C (TJ)	3mOhms @ 140A, 10V	4V @ 250µA	240 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-262
質量保證 B-2	来自供应商的订	IRFSL3206PBF INFINEON	950	22/23+	MOQ : 100 SPQ : 1	Approx. 11 days	核友型号：st76528495	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	60V	10V	120A (Tc)	6540 pF @ 50 V	300W(Tc)	3mOhms @ 75A, 10V	4V @ 150µA	170 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-262
質量保證 B-2	来自供应商的订	IRFSL3207ZPBF INFINEON	850	22/23+	MOQ : 100 SPQ : 1	Approx. 11 days	核友型号：st76538996	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	75V	10V	120A (Tc)	6920 pF @ 50 V	300W(Tc)	4.1mOhms @ 75A, 10V	4V @ 150µA	170 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-262
質量保證 B-1	来自供应商的订	IRFSL3306PBF INFINEON	20			Approx. 11 days	核友型号：st75141565	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	60V	10V	120A (Tc)	4520 pF @ 50 V	230W(Tc)	4.2mOhms @ 75A, 10V	4V @ 150µA	120 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-262
質量保證 B-1	来自供应商的订	IRFSL38N20DPBF INFINEON	10			Approx. 11 days	核友型号：st75141566	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	200V		43A (Tc)	2900 pF @ 25 V		54mOhms @ 26A, 10V	5V @ 250µA	91 nC @ 10 V			Through Hole	TO-262
質量保證 B-1	来自供应商的订	IRFSL4310PBF INFINEON	2			Approx. 11 days	核友型号：st75141567	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10V	130A(Tc)	7670 pF @ 50 V	300W(Tc)	7mOhms @ 75A, 10V	4V @ 250µA	250 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-262
質量保證 B-1	来自供应商的订	IRFSL7437PBF INFINEON	10			Approx. 11 days	核友型号：st75141568	Infineon Technologies	HEXFET®, StrongIRFET™	N-Channel	MOSFET (Metal Oxide)	40V	6V, 10V	195A(Tc)	7330 pF @ 25 V	230W(Tc)	1.8mOhms @ 100A, 10V	3.9V @ 150µA	225 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-262
質量保證 B-1	来自供应商的订	IRFSL7437PBF INFINEON	200	2106		Approx. 7 days	核友型号：st68904112	Infineon Technologies	HEXFET®, StrongIRFET™	N-Channel	MOSFET (Metal Oxide)	40V	6V, 10V	195A(Tc)	7330 pF @ 25 V	230W(Tc)	1.8mOhms @ 100A, 10V	3.9V @ 150µA	225 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-262
質量保證 B-1	来自供应商的订	IRFSL7440PBF INFINEON	10			Approx. 11 days	核友型号：st75141569	Infineon Technologies	HEXFET®, StrongIRFET™	N-Channel	MOSFET (Metal Oxide)	40V	6V, 10V	120A (Tc)	4730 pF @ 25 V	208W(Tc)	2.5mOhms @ 100A, 10V	3.9V @ 100µA	135 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	TO-262
質量保證 B-2	来自供应商的订	IRFTS9342TRPBF INFINEON	1,070	21+	MOQ : 1,070 SPQ : 1	Approx. 11 days	核友型号：st76375953	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	30V	4.5V, 10V	5.8A (Ta)	595 pF @ 25 V	2W (Ta)	40mOhms @ 5.8A, 10V	2.4V @ 25µA	12 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP
質量保證 B-1	来自供应商的订	IRFTS9342TRPBF INFINEON	3			Approx. 11 days	核友型号：st75141571	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	30V	4.5V, 10V	5.8A (Ta)	595 pF @ 25 V	2W (Ta)	40mOhms @ 5.8A, 10V	2.4V @ 25µA	12 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP
質量保證 B-1	来自供应商的订	IRFTS9342TRPBF INFINEON	3,000	2217		Approx. 7 days	核友型号：st68904113	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	30V	4.5V, 10V	5.8A (Ta)	595 pF @ 25 V	2W (Ta)	40mOhms @ 5.8A, 10V	2.4V @ 25µA	12 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP
質量保證 B-1	来自供应商的订	IRFU024NPBF INFINEON	8,791	17+		Approx. 11 days	核友型号：st71361819	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	10V	17A (Tc)	370 pF @ 25 V	45W (Tc)	75mOhm @ 10A, 10V	4V @ 250µA	20 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	IPAK (TO-251AA)
質量保證 B-1	来自供应商的订	IRFU024NPBF INFINEON	200	25+		Approx. 11 days	核友型号：st75029409	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	10V	17A (Tc)	370 pF @ 25 V	45W (Tc)	75mOhm @ 10A, 10V	4V @ 250µA	20 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	IPAK (TO-251AA)
質量保證 B-1	来自供应商的订	IRFU024NPBF INFINEON	60	2008-26		Approx. 7 days	核友型号：st68904114	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	10V	17A (Tc)	370 pF @ 25 V	45W (Tc)	75mOhm @ 10A, 10V	4V @ 250µA	20 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	IPAK (TO-251AA)
質量保證 B-1	来自供应商的订	IRFU120NPBF INFINEON	100			Approx. 11 days	核友型号：st75141572	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10V	9.4A(Tc)	330 pF @ 25 V	48W (Tc)	210mOhms @ 5.6A, 10V	4V @ 250µA	25 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	IPAK (TO-251AA)
質量保證 B-1	来自供应商的订	IRFU120NPBF INFINEON	1,000	22+		Approx. 11 days	核友型号：st71361820	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10V	9.4A(Tc)	330 pF @ 25 V	48W (Tc)	210mOhms @ 5.6A, 10V	4V @ 250µA	25 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	IPAK (TO-251AA)
質量保證 B-2	来自供应商的订	IRFU120NPBF INFINEON	6,000	22/23+	MOQ : 2,000 SPQ : 1	Approx. 11 days	核友型号：st76382028	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10V	9.4A(Tc)	330 pF @ 25 V	48W (Tc)	210mOhms @ 5.6A, 10V	4V @ 250µA	25 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	IPAK (TO-251AA)
質量保證 B-2	来自供应商的订	IRFU120NPBF INFINEON TECHNOLOGIES	3,000	N/A	MOQ : 900 SPQ : 450	Approx. 16 days	核友型号：st76681767	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10V	9.4A(Tc)	330 pF @ 25 V	48W (Tc)	210mOhms @ 5.6A, 10V	4V @ 250µA	25 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	IPAK (TO-251AA)
質量保證 B-1	来自供应商的订	IRFU220NPBF INFINEON	8,280			Approx. 11 days	核友型号：st75141573	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	200V	10V	5A (Tc)	300 pF @ 25 V	43W (Tc)	600mOhm @ 2.9A, 10V	4V @ 250µA	23 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	IPAK (TO-251AA)
質量保證 B-1	来自供应商的订	IRFU220NPBF INFINEON	2,545	20+		Approx. 11 days	核友型号：st71361821	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	200V	10V	5A (Tc)	300 pF @ 25 V	43W (Tc)	600mOhm @ 2.9A, 10V	4V @ 250µA	23 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	IPAK (TO-251AA)
質量保證 B-1	来自供应商的订	IRFU220NPBF INFINEON	5	2042		Approx. 7 days	核友型号：st68904120	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	200V	10V	5A (Tc)	300 pF @ 25 V	43W (Tc)	600mOhm @ 2.9A, 10V	4V @ 250µA	23 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	IPAK (TO-251AA)
質量保證 B-1	来自供应商的订	IRFU2405PBF INFINEON	8			Approx. 11 days	核友型号：st75141575	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	10V	56A (Tc)	2430 pF @ 25 V	110W (Tc)	16mOhms @ 34A, 10V	4V @ 250µA	110 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	IPAK (TO-251AA)
質量保證 B-2	来自供应商的订	IRFU2405PBF INFINEON	440	19+	MOQ : 440 SPQ : 1	Approx. 11 days	核友型号：st76451608	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	10V	56A (Tc)	2430 pF @ 25 V	110W (Tc)	16mOhms @ 34A, 10V	4V @ 250µA	110 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	IPAK (TO-251AA)
質量保證 B-1	来自供应商的订	IRFU3410PBF INFINEON	84			Approx. 11 days	核友型号：st75141577	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10V	31A (Tc)	1690 pF @ 25 V	3W(Ta), 110W(Tc)	39mOhms @ 18A, 10V	4V @ 250µA	56 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	IPAK (TO-251AA)
質量保證 B-1	来自供应商的订	IRFU3910PBF INFINEON	2,515	22+		Approx. 16 days	核友型号：st76078912	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10V	16A (Tc)	640 pF @ 25 V	79W (Tc)	115mOhm @ 10A, 10V	4V @ 250µA	44 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	IPAK (TO-251AA)
質量保證 B-1	来自供应商的订	IRFU3910PBF INFINEON	110			Approx. 11 days	核友型号：st75141578	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10V	16A (Tc)	640 pF @ 25 V	79W (Tc)	115mOhm @ 10A, 10V	4V @ 250µA	44 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	IPAK (TO-251AA)
質量保證 B-1	来自供应商的订	IRFU4510PBF INFINEON	536			Approx. 11 days	核友型号：st75141579	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10V	56A (Tc)	3031 pF @ 50 V	143W(Tc)	13.9mOhms @ 38A, 10V	4V @ 100µA	81 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	IPAK (TO-251AA)
質量保證 B-1	来自供应商的订	IRFU4615PBF INFINEON	6,000	21+		Approx. 11 days	核友型号：st71361822	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	150V	10V	33A (Tc)	1750 pF @ 50 V	144W(Tc)	42mOhms @ 21A, 10V	5V @ 100µA	26 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	IPAK (TO-251AA)
質量保證 B-1	来自供应商的订	IRFU5305PBF INFINEON	16			Approx. 11 days	核友型号：st75141580	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	55V	10V	31A (Tc)	1200 pF @ 25 V	110W (Tc)	65mOhm @ 16A, 10V	4V @ 250µA	63 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	IPAK (TO-251AA)
質量保證 B-1	来自供应商的订	IRFU5410PBF INFINEON	34,560	17+		Approx. 11 days	核友型号：st71361823	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	100V	10V	13A (Tc)	760 pF @ 25 V	66W (Tc)	205mOhms @ 7.8A, 10V	4V @ 250µA	58 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)	Through Hole	IPAK (TO-251AA)
質量保證 B-1	来自供应商的订	IRFU5505PBF INFINEON	30			Approx. 11 days	核友型号：st75141581	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	55V	10V	18A (Tc)	650 pF @ 25 V	57W (Tc)	110mOhms @ 9.6A, 10V	4V @ 250µA	32 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)	Through Hole	IPAK (TO-251AA)
質量保證 B-2	来自供应商的订	IRFU5505PBF INFINEON	1,335	19+	MOQ : 1,000 SPQ : 1	Approx. 11 days	核友型号：st76412937	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	55V	10V	18A (Tc)	650 pF @ 25 V	57W (Tc)	110mOhms @ 9.6A, 10V	4V @ 250µA	32 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)	Through Hole	IPAK (TO-251AA)
質量保證 B-1	来自供应商的订	IRFU7440PBF INFINEON	10			Approx. 11 days	核友型号：st75141582	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	40V	6V, 10V	90A (Tc)	4610 pF @ 25 V	140W (Tc)	2.4mOhms @ 90A, 10V	3.9V @ 100µA	134 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)	Through Hole	IPAK (TO-251AA)
質量保證 B-1	来自供应商的订	IRFU9024NPBF INFINEON	3			Approx. 11 days	核友型号：st75141583	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	55V	10V	11A (Tc)	350 pF @ 25 V	38W (Tc)	175mOhm @ 6.6A, 10V	4V @ 250µA	19 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)	Through Hole	IPAK (TO-251AA)
質量保證 B-2	来自供应商的订	IRFU9024NPBF INFINEON	8,750	22/23+	MOQ : 2,000 SPQ : 1	Approx. 11 days	核友型号：st76397998	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	55V	10V	11A (Tc)	350 pF @ 25 V	38W (Tc)	175mOhm @ 6.6A, 10V	4V @ 250µA	19 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)	Through Hole	IPAK (TO-251AA)
質量保證 B-1	来自供应商的订	IRFU9024NPBF INFINEON	5,625	22+		Approx. 11 days	核友型号：st71361824	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	55V	10V	11A (Tc)	350 pF @ 25 V	38W (Tc)	175mOhm @ 6.6A, 10V	4V @ 250µA	19 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)	Through Hole	IPAK (TO-251AA)