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库存类别供应商排名	库存所在位置	型号 / 制造商 / 其他	库存量	生产批次	最低订货数量 / 后续订购数量	预定出货日	资讯核友型号	Manufacturer	Series	FET Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Operating Temperature Range	Applications	Mounting Type	Device Package	Technology	FET Feature
質量保證 B-1	来自供应商的订	IRF100B201 INFINEON	684			预计 11个工作日	核友型号：st75141122	Infineon Technologies	HEXFETR, StrongIRFET?	N-Channel	100V	10V	192A(Tc)	9500 pF @ 50 V	441W(Tc)	4.2mOhms @ 115A, 10V	4V @ 250μA	255 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Standard	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	来自供应商的订	IRF100B201 INFINEON	17,993	21+		预计 11个工作日	核友型号：st71361736	Infineon Technologies	HEXFETR, StrongIRFET?	N-Channel	100V	10V	192A(Tc)	9500 pF @ 50 V	441W(Tc)	4.2mOhms @ 115A, 10V	4V @ 250μA	255 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Standard	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	来自供应商的订海外位置	IRF100B201 INFINEON	30,011	22+		预计 16个工作日	核友型号：st49404281	Infineon Technologies	HEXFETR, StrongIRFET?	N-Channel	100V	10V	192A(Tc)	9500 pF @ 50 V	441W(Tc)	4.2mOhms @ 115A, 10V	4V @ 250μA	255 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Standard	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	来自供应商的订	IRF100B202 INFINEON	10,737	21+		预计 11个工作日	核友型号：st71361737	Infineon Technologies	HEXFETR, StrongIRFET?	N-Channel	100V	10V	97A(Tc)	4476 pF @ 50 V	221W(Tc)	8.6mOhms @ 58A, 10V	4V @ 150μA	116 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Standard	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	来自供应商的订	IRF100P219AKMA1 INFINEON	40			预计 11个工作日	核友型号：st75141123	Infineon Technologies	StrongIRFET?	N-Channel	100V	6V, 10V	203A(Tc)	12020 pF @ 50 V	3.8W(Ta), 341W(Tc)	1.7mOhms @ 100A, 10V	3.8V @ 278μA	210 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)		Through Hole	PG-TO247-3	Mosfet (Metal Oxide)
質量保證 B-1	来自供应商的订	IRF100S201 INFINEON	3			预计 11个工作日	核友型号：st75141124	Infineon Technologies	HEXFETR, StrongIRFET?	N-Channel	100V	10V	192A(Tc)	9500 pF @ 50 V	441W(Tc)	4.2mOhms @ 115A, 10V	4V @ 250μA	255 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)		Surface Mount	PG-TO263-3	Mosfet (Metal Oxide)
質量保證 B-1	来自供应商的订	IRF1010EPBF INFINEON	5			预计 11个工作日	核友型号：st75141125	Infineon Technologies	HEXFETR	N-Channel	60V	10V	84A(Tc)	3210 pF @ 25 V	200W(Tc)	12mOhms @ 50A, 10V	4V @ 250μA	130 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)		Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	来自供应商的订	IRF1010EPBF INFINEON TECHNOLOGIES	1,000		MOQ : 1,000 SPQ : 1	预计 11个工作日	核友型号：st70647269	Infineon Technologies	HEXFETR	N-Channel	60V	10V	84A(Tc)	3210 pF @ 25 V	200W(Tc)	12mOhms @ 50A, 10V	4V @ 250μA	130 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)		Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	来自供应商的订	IRF1010EZPBF INFINEON	370			预计 11个工作日	核友型号：st75141126	Infineon Technologies	HEXFETR	N-Channel	60V	10V	75A(Tc)	2810 pF @ 25 V	140W(Tc)	8.5mOhms @ 51A, 10V	4V @ 100μA	86 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)		Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	来自供应商的订	IRF1010N INFINEON	10	04+		预计 11个工作日	核友型号：st75022960	Infineon Technologies	Planar Mosfet	MOSFET Nch	55V		72A				4 V					Through Hole	TO-220
質量保證 B-1	来自供应商的订	IRF1010NPBF INFINEON	8			预计 11个工作日	核友型号：st75141127	Infineon Technologies	HEXFETR	N-Channel	55V	10V	85A(Tc)	3210 pF @ 25 V	180W(Tc)	11mOhms @ 43A, 10V	4V @ 250μA	120 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)		Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	来自供应商的订	IRF1010NSTRLPBF INFINEON	25			预计 11个工作日	核友型号：st75141128	Infineon Technologies	HEXFETR	N-Channel	55V	10V	85A(Tc)	3210 pF @ 25 V	180W(Tc)	11mOhms @ 43A, 10V	4V @ 250μA	120 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)		Surface Mount	D2PAK	Mosfet (Metal Oxide)
質量保證 B-1	来自供应商的订	IRF1010ZPBF INFINEON	50			预计 11个工作日	核友型号：st75141129	Infineon Technologies	HEXFETR	N-Channel	55V	10V	75A(Tc)	2840 pF @ 25 V	140W(Tc)	7.5mOhms @ 75A, 10V	4V @ 250μA	95 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)		Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	来自供应商的订	IRF1010ZSTRLPBF INFINEON	1,200	2318+		预计 16个工作日	核友型号：st76078861	Infineon Technologies	HEXFETR	N-Channel	55V	10V	75A(Tc)	2840 pF @ 25 V	140W(Tc)	7.5mOhms @ 75A, 10V	4V @ 250μA	95 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)		Surface Mount	D2PAK	Mosfet (Metal Oxide)
質量保證 B-1	来自供应商的订	IRF1018ESTRLPBF INFINEON	168			预计 11个工作日	核友型号：st75141130	Infineon Technologies	HEXFETR	N-Channel	60V	10V	79A(Tc)	2290 pF @ 50 V	110W(Tc)	8.4mOhms @ 47A, 10V	4V @ 100μA	69 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)		Surface Mount	D2PAK	Mosfet (Metal Oxide)
質量保證 B-1	来自供应商的订	IRF1104PBF INFINEON	8			预计 11个工作日	核友型号：st75141131	Infineon Technologies	HEXFETR	N-Channel	40V	10V	100A(Tc)	2900 pF @ 25 V	170W(Tc)	9mOhms @ 60A, 10V	4V @ 250μA	93 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)		Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	来自供应商的订	IRF1310NPBF INFINEON	40			预计 11个工作日	核友型号：st75141132	Infineon Technologies	HEXFETR	N-Channel	100V	10V	42A(Tc)	1900 pF @ 25 V	160W(Tc)	36mOhms @ 22A, 10V	4V @ 250μA	110 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)		Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	来自供应商的订	IRF1310NSTRLPBF INFINEON	50			预计 11个工作日	核友型号：st75141133	Infineon Technologies	HEXFETR	N-Channel	100V	10V	42A(Tc)	1900 pF @ 25 V	3.8W(Ta), 160W(Tc)	36mOhms @ 22A, 10V	4V @ 250μA	110 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)		Surface Mount	D2PAK	Mosfet (Metal Oxide)
質量保證 B-1	来自供应商的订	IRF1324PBF INFINEON	9			预计 11个工作日	核友型号：st75141134	Infineon Technologies	HEXFETR	N-Channel	24V	10V	195A(Tc)	7590 pF @ 24 V	300W(Tc)	1.5mOhms @ 195A, 10V	4V @ 250μA	240 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)		Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	来自供应商的订	IRF135B203 INFINEON	14,006	17+		预计 11个工作日	核友型号：st71361738	Infineon Technologies	StrongIRFET?	N-Channel	135V	10V	129A(Tc)	9700 pF @ 50 V	441W(Tc)	8.4mOhms @ 77A, 10V	4V @ 250μA	270 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)		Through Hole	PG-TO220-3	Mosfet (Metal Oxide)
質量保證 B-1	来自供应商的订	IRF135S203 INFINEON	10			预计 11个工作日	核友型号：st75141135	Infineon Technologies	HEXFETR, StrongIRFET?	N-Channel	135V	10V	129A(Tc)	9700 pF @ 50 V	441W(Tc)	8.4mOhms @ 77A, 10V	4V @ 250μA	270 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)		Surface Mount	PG-TO263-3-2	Mosfet (Metal Oxide)
質量保證 B-1	来自供应商的订	IRF1404PBF INFINEON	10,000			预计 8个工作日	核友型号：st73247166	Infineon Technologies	HEXFETR	N-Channel	40V	10V	202A(Tc)	5669 pF @ 25 V	333W(Tc)	4mOhms @ 121A, 10V	4V @ 250μA	196 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)		Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	来自供应商的订	IRF1404PBF INFINEON	960			预计 11个工作日	核友型号：st75141136	Infineon Technologies	HEXFETR	N-Channel	40V	10V	202A(Tc)	5669 pF @ 25 V	333W(Tc)	4mOhms @ 121A, 10V	4V @ 250μA	196 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)		Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	来自供应商的订	IRF1404PBF INFINEON	27,129	21+		预计 11个工作日	核友型号：st71361739	Infineon Technologies	HEXFETR	N-Channel	40V	10V	202A(Tc)	5669 pF @ 25 V	333W(Tc)	4mOhms @ 121A, 10V	4V @ 250μA	196 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)		Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	来自供应商的订	IRF1404PBF INFINEON TECHNOLOGIES	1,000		MOQ : 1,000 SPQ : 1	预计 11个工作日	核友型号：st72742464	Infineon Technologies	HEXFETR	N-Channel	40V	10V	202A(Tc)	5669 pF @ 25 V	333W(Tc)	4mOhms @ 121A, 10V	4V @ 250μA	196 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)		Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	来自供应商的订	IRF1404STRLPBF INFINEON	10			预计 11个工作日	核友型号：st75141137	Infineon Technologies	HEXFETR	N-Channel	40V	10V	162A(Tc)	7360 pF @ 25 V	3.8W(Ta), 200W(Tc)	4mOhms @ 95A, 10V	4V @ 250μA	200 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)		Surface Mount	D2PAK	Mosfet (Metal Oxide)
質量保證 B-1	来自供应商的订	IRF1404ZPBF INFINEON	7,190	21+		预计 11个工作日	核友型号：st71361740	Infineon Technologies	HEXFETR	N-Channel	40V	10V	180A(Tc)	4340 pF @ 25 V	200W(Tc)	3.7mOhms @ 75A, 10V	4V @ 250μA	150 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)		Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	来自供应商的订	IRF1404ZPBF INFINEON	36			预计 11个工作日	核友型号：st75141138	Infineon Technologies	HEXFETR	N-Channel	40V	10V	180A(Tc)	4340 pF @ 25 V	200W(Tc)	3.7mOhms @ 75A, 10V	4V @ 250μA	150 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)		Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	来自供应商的订	IRF1404ZSPBF INFINEON	4			预计 11个工作日	核友型号：st75141139	Infineon Technologies	HEXFETR	N-Channel	40V	10V	180A(Tc)	4340 pF @ 25 V	200W(Tc)	3.7mOhms @ 75A, 10V	4V @ 150μA	150 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)		Surface Mount	D2PAK	Mosfet (Metal Oxide)
質量保證 B-1	来自供应商的订	IRF1405PBF INFINEON TECHNOLOGIES	1,000		MOQ : 1,000 SPQ : 1	预计 11个工作日	核友型号：st70647270	Infineon Technologies	HEXFETR	N-Channel	55V	10V	169A(Tc)	5480 pF @ 25 V	330W(Tc)	5.3mOhms @ 101A, 10V	4V @ 250μA	260 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)		Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	来自供应商的订	IRF1405PBF INFINEON	1,000			预计 11个工作日	核友型号：st75141140	Infineon Technologies	HEXFETR	N-Channel	55V	10V	169A(Tc)	5480 pF @ 25 V	330W(Tc)	5.3mOhms @ 101A, 10V	4V @ 250μA	260 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)		Through Hole	TO-220AB	Mosfet (Metal Oxide)	Standard
質量保證 B-1	来自供应商的订	IRF1405PBF INFINEON	12,000	21+		预计 11个工作日	核友型号：st71361741	Infineon Technologies	HEXFETR	N-Channel	55V	10V	169A(Tc)	5480 pF @ 25 V	330W(Tc)	5.3mOhms @ 101A, 10V	4V @ 250μA	260 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)		Through Hole	TO-220AB	Mosfet (Metal Oxide)	Standard
質量保證 B-1	来自供应商的订	IRF1405STRLPBF INFINEON	10			预计 11个工作日	核友型号：st75141141	Infineon Technologies	HEXFETR	N-Channel	55V	10V	131A(Tc)	5480 pF @ 25 V	200W(Tc)	5.3mOhms @ 101A, 10V	4V @ 250μA	260 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)		Surface Mount	D2PAK	Mosfet (Metal Oxide)
質量保證 B-1	来自供应商的订	IRF1405ZLPBF INFINEON	10			预计 11个工作日	核友型号：st75141142	Infineon Technologies	HEXFETR	N-Channel	55V	10V	75A(Tc)	4780 pF @ 25 V	230W(Tc)	4.9mOhms @ 75A, 10V	4V @ 250μA	180 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)		Through Hole	TO-262	Mosfet (Metal Oxide)
質量保證 B-1	来自供应商的订	IRF1405ZPBF INFINEON	10			预计 11个工作日	核友型号：st75141143	Infineon Technologies	HEXFETR	N-Channel	55V	10V	75A(Tc)	4780 pF @ 25 V	230W(Tc)	4.9mOhms @ 75A, 10V	4V @ 250μA	180 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)		Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	来自供应商的订	IRF1405ZSTRLPBF INFINEON	1			预计 11个工作日	核友型号：st75141144	Infineon Technologies	HEXFETR	N-Channel	55V	10V	75A(Tc)	4780 pF @ 25 V	230W(Tc)	4.9mOhms @ 75A, 10V	4V @ 250μA	180 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)		Surface Mount	D2PAK	Mosfet (Metal Oxide)
質量保證 B-1	来自供应商的订	IRF1407PBF INFINEON	1,000			预计 11个工作日	核友型号：st75141145	Infineon Technologies	HEXFETR	N-Channel	75V	10V	130A(Tc)	5600 pF @ 25 V	330W(Tc)	7.8mOhms @ 78A, 10V	4V @ 250μA	250 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)		Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	来自供应商的订	IRF1407PBF INFINEON	15,750	21+		预计 11个工作日	核友型号：st71361742	Infineon Technologies	HEXFETR	N-Channel	75V	10V	130A(Tc)	5600 pF @ 25 V	330W(Tc)	7.8mOhms @ 78A, 10V	4V @ 250μA	250 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)		Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	来自供应商的订	IRF1407PBF INFINEON TECHNOLOGIES	1,000		MOQ : 1,000 SPQ : 1	预计 11个工作日	核友型号：st70647271	Infineon Technologies	HEXFETR	N-Channel	75V	10V	130A(Tc)	5600 pF @ 25 V	330W(Tc)	7.8mOhms @ 78A, 10V	4V @ 250μA	250 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)		Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	来自供应商的订	IRF1407STRLPBF INFINEON	8,618	17+		预计 11个工作日	核友型号：st71361743	Infineon Technologies	HEXFETR	N-Channel	75V	10V	100A(Tc)	5600 pF @ 25 V	3.8W(Ta), 200W(Tc)	7.8mOhms @ 78A, 10V	4V @ 250μA	250 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)		Surface Mount	D2PAK	Mosfet (Metal Oxide)
質量保證 B-1	来自供应商的订	IRF1407STRLPBF INFINEON	20			预计 11个工作日	核友型号：st75141146	Infineon Technologies	HEXFETR	N-Channel	75V	10V	100A(Tc)	5600 pF @ 25 V	3.8W(Ta), 200W(Tc)	7.8mOhms @ 78A, 10V	4V @ 250μA	250 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)		Surface Mount	D2PAK	Mosfet (Metal Oxide)