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庫存類別供應商排名	庫存所在位置	型號 / 製造商 / 其他	庫存量	生產年份/批號	最低訂貨數量 / 後續訂購數量	預定出貨日	資訊核友管理編號	Manufacturer	Series	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate charge (Qg) when Vgs is applied (max)	Technology	Configuration	FET Feature	Operating Temperature Range	Applications	Mounting Type	Device Package
質量保證 B-2	來自供應商的訂	IRF9389TRPBF INFINEON	4,000	22/23+	MOQ : 2,000 SPQ : 1	預計 11個工作天	核友型號：st76370533	Infineon Technologies	HEXFET®	30V	6.8A, 4.6A	398pF @ 15V	2W	27mOhms @ 6.8A, 10V	2.3V @ 10μA	14nC @ 10V	MOSFET (Metal Oxide)	N and P-Channel	Logic Level Gate	-55°C ~ 150°C (TJ)		Surface Mount	8-SO
質量保證 B-1	來自供應商的訂	IRF9389TRPBF INFINEON	30			預計 11個工作天	核友型號：st75141304	Infineon Technologies	HEXFET®	30V	6.8A, 4.6A	398pF @ 15V	2W	27mOhms @ 6.8A, 10V	2.3V @ 10μA	14nC @ 10V	MOSFET (Metal Oxide)	N and P-Channel	Logic Level Gate	-55°C ~ 150°C (TJ)		Surface Mount	8-SO
質量保證 B-1	來自供應商的訂海外位置	IRF9389TRPBF INFINEON	53,075	23+		預計 16個工作天	End of Life 核友型號：st49404464	Infineon Technologies	HEXFET®	30V	6.8A, 4.6A	398pF @ 15V	2W	27mOhms @ 6.8A, 10V	2.3V @ 10μA	14nC @ 10V	MOSFET (Metal Oxide)	N and P-Channel	Logic Level Gate	-55°C ~ 150°C (TJ)		Surface Mount	8-SO
質量保證 B-1	來自供應商的訂	IRF9392TRPBF INFINEON	13			預計 11個工作天	核友型號：st75141305	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	30V	10V, 20V	9.8A(TA)	1270 pF @ 25 V	2.5W (Ta)	12.1mOhms @ 7.8A, 20V	2.4V @ 25µA	14 nC @ 4.5 V	±25V	-55°C ~ 150°C (TJ)		Surface Mount
質量保證 B-1	來自供應商的訂	IRF9393TRPBF INFINEON	15			預計 11個工作天	核友型號：st75141306	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	30V	10V, 20V	9.2A (Ta)	1110 pF @ 25 V	2.5W (Ta)	13.3mOhms @ 9.2A, 20V	2.4V @ 25µA	38 nC @ 10 V	±25V	-55°C ~ 150°C (TJ)		Surface Mount
質量保證 B-1	來自供應商的訂	IRF9395MTRPBF INFINEON	5			預計 11個工作天	核友型號：st75141307	Infineon Technologies	HEXFET®	30V	14A	3241pF @ 15V	2.1W	7mOhms @ 14A, 10V	2.4V @ 50µA	64nC @ 10V	MOSFET (Metal Oxide)	2 P-Channel (Dual)	Logic Level Gate	-40°C ~ 150°C (TJ)		Surface Mount	DIRECTFET? MC
質量保證 B-2	來自供應商的訂	IRF9510PBF VISHAY	2,000	N/A	MOQ : 600 SPQ : 300	預計 16個工作天	核友型號：st76681693	VISHAY		P-Channel	MOSFET (Metal Oxide)	100V	10V	4A (Tc)	200 pF @ 25 V	43W (Tc)	1.2Ohms @ 2.4A, 10V	4V @ 250µA	8.7 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole
質量保證 B-1	來自供應商的訂	IRF9520PBF VISHAY	3,000	17+		預計 11個工作天	核友型號：st75024671	VISHAY		P-Channel	MOSFET (Metal Oxide)	100V	10V	6.8A(Tc)	390 pF @ 25 V	150°C (TJ)	600mOhms @ 4.1A, 10V	4V @ 250µA	18 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole
質量保證 B-1	來自供應商的訂	IRF9520PBF VISHAY	203	NA		預計 7個工作天	核友型號：st68903891	VISHAY		P-Channel	MOSFET (Metal Oxide)	100V	10V	6.8A(Tc)	390 pF @ 25 V	150°C (TJ)	600mOhms @ 4.1A, 10V	4V @ 250µA	18 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole
質量保證 B-1	來自供應商的訂	IRF9530NPBF INFINEON	700			預計 11個工作天	核友型號：st75141308	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	100V	10V	14A (Tc)	760 pF @ 25 V	79W (Tc)	200mOhm @ 8.4A, 10V	4V @ 250µA	58 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole
質量保證 B-1	來自供應商的訂	IRF9530NPBF INFINEON	1,000	21+		預計 8個工作天	核友型號：st70572729	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	100V	10V	14A (Tc)	760 pF @ 25 V	79W (Tc)	200mOhm @ 8.4A, 10V	4V @ 250µA	58 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole
質量保證 B-2	來自供應商的訂	IRF9530NPBF INFINEON	4,000	22/23+	MOQ : 2,000 SPQ : 1	預計 11個工作天	核友型號：st76386653	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	100V	10V	14A (Tc)	760 pF @ 25 V	79W (Tc)	200mOhm @ 8.4A, 10V	4V @ 250µA	58 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole
質量保證 B-1	來自供應商的訂	IRF9530NPBF INFINEON	150	2018		預計 7個工作天	核友型號：st68903898	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	100V	10V	14A (Tc)	760 pF @ 25 V	79W (Tc)	200mOhm @ 8.4A, 10V	4V @ 250µA	58 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole
質量保證 B-1	來自供應商的訂海外位置	IRF9530NPBF INFINEON	36,595	24+		預計 16個工作天	核友型號：st49404467	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	100V	10V	14A (Tc)	760 pF @ 25 V	79W (Tc)	200mOhm @ 8.4A, 10V	4V @ 250µA	58 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole
質量保證 B-1	來自供應商的訂海外位置	IRF9530NSTRLPBF INFINEON	5,972	22+		預計 16個工作天	核友型號：st49404468	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	100V	10V	14A (Tc)	760 pF @ 25 V	3.8W(Ta), 79W(Tc)	200mOhm @ 8.4A, 10V	4V @ 250µA	58 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Surface Mount
質量保證 B-2	來自供應商的訂	IRF9530NSTRLPBF INFINEON TECHNOLOGIES	1,600	N/A	MOQ : 800 SPQ : 800	預計 16個工作天	核友型號：st76681694	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	100V	10V	14A (Tc)	760 pF @ 25 V	3.8W(Ta), 79W(Tc)	200mOhm @ 8.4A, 10V	4V @ 250µA	58 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Surface Mount
質量保證 B-1	來自供應商的訂	IRF9530PBF VISHAY	5			預計 11個工作天	核友型號：st75141309	VISHAY		P-Channel	MOSFET (Metal Oxide)	100V	10V	12A (Tc)	860 pF @ 25 V	88W(Tc)	300mOhms @ 7.2A, 10V	4V @ 250µA	38 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole
質量保證 B-2	來自供應商的訂	IRF9530PBF VISHAY	4,170	22+	MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st76373537	VISHAY		P-Channel	MOSFET (Metal Oxide)	100V	10V	12A (Tc)	860 pF @ 25 V	88W(Tc)	300mOhms @ 7.2A, 10V	4V @ 250µA	38 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole
質量保證 B-1	來自供應商的訂	IRF9530PBF VISHAY	1,594	23+		預計 16個工作天	核友型號：st76083664	VISHAY		P-Channel	MOSFET (Metal Oxide)	100V	10V	12A (Tc)	860 pF @ 25 V	88W(Tc)	300mOhms @ 7.2A, 10V	4V @ 250µA	38 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole
質量保證 B-1	來自供應商的訂	IRF9530PBF VISHAY	350	NA		預計 7個工作天	核友型號：st68903900	VISHAY		P-Channel	MOSFET (Metal Oxide)	100V	10V	12A (Tc)	860 pF @ 25 V	88W(Tc)	300mOhms @ 7.2A, 10V	4V @ 250µA	38 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole
質量保證 B-2	來自供應商的訂	IRF9540NLPBF INFINEON	750	20+	MOQ : 250 SPQ : 1	預計 11個工作天	核友型號：st76512942	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	100V	10V	23A (Tc)	1450 pF @ 25 V	3.1W(Ta), 110W(Tc)	117mOhms @ 14A, 10V	4V @ 250µA	110 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Through Hole
質量保證 B-2	來自供應商的訂	IRF9540NPBF INFINEON TECHNOLOGIES	10,000	N/A	MOQ : 900 SPQ : 450	預計 16個工作天	核友型號：st76681695	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	100V	10V	23A (Tc)	1300 pF @ 25 V	140W (Tc)	117mOhms @ 11A, 10V	4V @ 250µA	97 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Through Hole
質量保證 B-1	來自供應商的訂	IRF9540NPBF INFINEON	33,619	26+		預計 16個工作天	核友型號：st76078880	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	100V	10V	23A (Tc)	1300 pF @ 25 V	140W (Tc)	117mOhms @ 11A, 10V	4V @ 250µA	97 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Through Hole
質量保證 B-2	來自供應商的訂	IRF9540NPBF INFINEON	423	22/23+	MOQ : 423 SPQ : 1	預計 11個工作天	核友型號：st76349772	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	100V	10V	23A (Tc)	1300 pF @ 25 V	140W (Tc)	117mOhms @ 11A, 10V	4V @ 250µA	97 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Through Hole
質量保證 B-1	來自供應商的訂	IRF9540NPBF INFINEON	2,665			預計 11個工作天	核友型號：st75141310	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	100V	10V	23A (Tc)	1300 pF @ 25 V	140W (Tc)	117mOhms @ 11A, 10V	4V @ 250µA	97 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Through Hole
質量保證 B-1	來自供應商的訂	IRF9540NPBF INFINEON	450	2608		預計 7個工作天	核友型號：st68903902	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	100V	10V	23A (Tc)	1300 pF @ 25 V	140W (Tc)	117mOhms @ 11A, 10V	4V @ 250µA	97 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Through Hole
質量保證 B-2	來自供應商的訂	IRF9540NSTRLPBF INFINEON	5,000	22+	MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st76412936	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	100V	10V	23A (Tc)	1450 pF @ 25 V	3.1W(Ta), 110W(Tc)	117mOhms @ 14A, 10V	4V @ 250µA	110 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Surface Mount
質量保證 B-1	來自供應商的訂	IRF9540NSTRLPBF INFINEON	299			預計 11個工作天	核友型號：st75141311	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	100V	10V	23A (Tc)	1450 pF @ 25 V	3.1W(Ta), 110W(Tc)	117mOhms @ 14A, 10V	4V @ 250µA	110 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Surface Mount
質量保證 B-1	來自供應商的訂	IRF9540NSTRLPBF INFINEON	100	22+		預計 11個工作天	核友型號：st75027777	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	100V	10V	23A (Tc)	1450 pF @ 25 V	3.1W(Ta), 110W(Tc)	117mOhms @ 14A, 10V	4V @ 250µA	110 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Surface Mount
質量保證 B-1	來自供應商的訂	IRF9540NSTRLPBF INFINEON	13	1727+		預計 4個工作天	核友型號：st74840151	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	100V	10V	23A (Tc)	1450 pF @ 25 V	3.1W(Ta), 110W(Tc)	117mOhms @ 14A, 10V	4V @ 250µA	110 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Surface Mount
質量保證 B-2	來自供應商的訂	IRF9540NSTRLPBF INFINEON TECHNOLOGIES	99,200	N/A	MOQ : 800 SPQ : 800	預計 16個工作天	核友型號：st76681696	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	100V	10V	23A (Tc)	1450 pF @ 25 V	3.1W(Ta), 110W(Tc)	117mOhms @ 14A, 10V	4V @ 250µA	110 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Surface Mount
質量保證 B-2	來自供應商的訂	IRF9540NSTRRPBF INFINEON TECHNOLOGIES	800	N/A	MOQ : 800 SPQ : 800	預計 16個工作天	核友型號：st76681697	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	100V	10V	23A (Tc)	1450 pF @ 25 V	3.1W(Ta), 110W(Tc)	117mOhms @ 14A, 10V	4V @ 250µA	110 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Surface Mount
質量保證 B-1	來自供應商的訂	IRF9640PBF VISHAY	3,000	20+		預計 11個工作天	核友型號：st75026773	VISHAY		P-Channel	MOSFET (Metal Oxide)	200V	10V	11A (Tc)	1200 pF @ 25 V	125W (Tc)	500mOhms @ 6.6A, 10V	4V @ 250µA	44 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Through Hole
質量保證 B-1	來自供應商的訂	IRF9640PBF VISHAY	50	20+		預計 11個工作天	核友型號：st76831706	VISHAY		P-Channel	MOSFET (Metal Oxide)	200V	10V	11A (Tc)	1200 pF @ 25 V	125W (Tc)	500mOhms @ 6.6A, 10V	4V @ 250µA	44 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Through Hole
質量保證 B-2	來自供應商的訂	IRF9640PBF VISHAY	14,888	20+	MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st76385233	VISHAY		P-Channel	MOSFET (Metal Oxide)	200V	10V	11A (Tc)	1200 pF @ 25 V	125W (Tc)	500mOhms @ 6.6A, 10V	4V @ 250µA	44 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Through Hole
質量保證 B-1	來自供應商的訂	IRF9640PBF VISHAY	13	NA		預計 7個工作天	核友型號：st68903909	VISHAY		P-Channel	MOSFET (Metal Oxide)	200V	10V	11A (Tc)	1200 pF @ 25 V	125W (Tc)	500mOhms @ 6.6A, 10V	4V @ 250µA	44 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Through Hole
質量保證 B-2	來自供應商的訂	IRF9910TRPBF INFINEON	190	15+	MOQ : 190 SPQ : 1	預計 11個工作天	核友型號：st76386631	Infineon Technologies	HEXFET®	20V	10A, 12A	900pF @ 10V	2W	9.3mOhms @ 12A, 10V	2.55V @ 250μA	11nC @ 4.5V	MOSFET (Metal Oxide)	2 N-Channel (Dual)	Logic Level Gate	-55°C ~ 150°C (TJ)		Surface Mount	8-SO
質量保證 B-1	來自供應商的訂	IRF9952TRPBF INFINEON	10			預計 11個工作天	核友型號：st75141313	Infineon Technologies	HEXFET®	30V	3.5A, 2.3A	190pF @ 15V	2W	100mOhm @ 2.2A, 10V	1V @ 250μA	14nC @ 10V	MOSFET (Metal Oxide)	N and P-Channel	Logic Level Gate	-55°C ~ 150°C (TJ)		Surface Mount	8-SO
質量保證 B-1	來自供應商的訂	IRF9Z24NPBF INFINEON	788			預計 11個工作天	核友型號：st75141314	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	55V	10V	12A (Tc)	350 pF @ 25 V	45W (Tc)	175mOhms @ 7.2A, 10V	4V @ 250µA	19 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole
質量保證 B-2	來自供應商的訂	IRF9Z24NPBF INFINEON	2,000	22/23+	MOQ : 2,000 SPQ : 1	預計 11個工作天	核友型號：st76371796	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	55V	10V	12A (Tc)	350 pF @ 25 V	45W (Tc)	175mOhms @ 7.2A, 10V	4V @ 250µA	19 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole
質量保證 B-2	來自供應商的訂	IRF9Z24NPBF INFINEON TECHNOLOGIES	30,000	N/A	MOQ : 1,100 SPQ : 550	預計 16個工作天	核友型號：st76681699	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	55V	10V	12A (Tc)	350 pF @ 25 V	45W (Tc)	175mOhms @ 7.2A, 10V	4V @ 250µA	19 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole
質量保證 B-1	來自供應商的訂	IRF9Z34NPBF INFINEON	3,211	22+		預計 16個工作天	核友型號：st76078881	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	55V	10V	19A (Tc)	620 pF @ 25 V	68W (Tc)	100mOhm @ 10A, 10V	4V @ 250µA	35 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole
質量保證 B-1	來自供應商的訂	IRF9Z34NPBF INFINEON	4			預計 11個工作天	核友型號：st75141315	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	55V	10V	19A (Tc)	620 pF @ 25 V	68W (Tc)	100mOhm @ 10A, 10V	4V @ 250µA	35 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole
質量保證 B-1	來自供應商的訂	IRF9Z34NPBF INFINEON	6,200	21+		預計 11個工作天	核友型號：st71361774	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	55V	10V	19A (Tc)	620 pF @ 25 V	68W (Tc)	100mOhm @ 10A, 10V	4V @ 250µA	35 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole
質量保證 B-2	來自供應商的訂	IRF9Z34NPBF INFINEON	69,941	21+	MOQ : 3,000 SPQ : 1	預計 11個工作天	核友型號：st76364454	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	55V	10V	19A (Tc)	620 pF @ 25 V	68W (Tc)	100mOhm @ 10A, 10V	4V @ 250µA	35 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole
質量保證 B-1	來自供應商的訂	IRF9Z34NPBF INFINEON	200	0734		預計 7個工作天	核友型號：st68903917	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	55V	10V	19A (Tc)	620 pF @ 25 V	68W (Tc)	100mOhm @ 10A, 10V	4V @ 250µA	35 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole
質量保證 B-1	來自供應商的訂	IRF9Z34NSTRLPBF INFINEON	49			預計 11個工作天	核友型號：st75141316	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	55V	10V	19A (Tc)	620 pF @ 25 V	3.8W(Ta), 68W(Tc)	100mOhm @ 10A, 10V	4V @ 250µA	35 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Surface Mount
質量保證 B-2	來自供應商的訂	IRF9Z34NSTRLPBF INFINEON	10,402	22/23+	MOQ : 500 SPQ : 1	預計 11個工作天	核友型號：st76488670	Infineon Technologies	HEXFET®	P-Channel	MOSFET (Metal Oxide)	55V	10V	19A (Tc)	620 pF @ 25 V	3.8W(Ta), 68W(Tc)	100mOhm @ 10A, 10V	4V @ 250µA	35 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Surface Mount
質量保證 B-1	來自供應商的訂	IRFB23N15DPBF INFINEON	26			預計 11個工作天	核友型號：st75141318	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	150V	10V	23A (Tc)	1200 pF @ 25 V	3.8W(Ta), 136W(Tc)	90mOhms @ 14A, 10V	5.5V @ 250µA	56 nC @ 10 V	±30V	-55°C ~ 175°C (TJ)		Through Hole
質量保證 B-1	來自供應商的訂	IRFB260NPBF INFINEON	20			預計 11個工作天	核友型號：st75141319	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	200V	10V	56A (Tc)	4220 pF @ 25 V	380W(Tc)	40mOhms @ 34A, 10V	4V @ 250µA	220 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole