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核友管理編號		 Manufacturer Series FET Type Technology Drain to Source Voltage (Vdss) Drive Voltage (Max Rds On, Min Rds On) Current - Continuous Drain (Id) @ 25°C Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Operating Temperature Range Applications Automotive Mounting Type Device Package FET Feature
質量保證
B-2 		來自供應商的訂

IRFP4768PBF

IRFP4768PBF
INFINEON

RoHS
9,600 22+   MOQ : 200
SPQ : 1

預計 11個工作天

核友型號：st76517689

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 250V 10V 93A (Tc) 10880 pF @ 50 V 520W(Tc) 17.5mOhms @ 56A, 10V 5V @ 250µA 270 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-247AC
質量保證
B-2 		來自供應商的訂

IRFP4768PBF
INFINEON TECHNOLOGIES

10,000 N/A   MOQ : 150
SPQ : 75

預計 16個工作天

核友型號：st76681744

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 250V 10V 93A (Tc) 10880 pF @ 50 V 520W(Tc) 17.5mOhms @ 56A, 10V 5V @ 250µA 270 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-247AC
質量保證
B-2 		來自供應商的訂
RoHS
350 22/23+   MOQ : 100
SPQ : 1

預計 11個工作天

核友型號：st76543000

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 250V 10V 93A (Tc) 10880 pF @ 50 V 520W(Tc) 17.5mOhms @ 56A, 10V 5V @ 250µA 270 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole PG-TO247-3-901
質量保證
B-1 		來自供應商的訂

IRFP4868PBF

IRFP4868PBF
INFINEON

3  

預計 11個工作天

核友型號：st75141462

Infineon Technologies N-Channel MOSFET (Metal Oxide) 300V 10V 70A (Tc) 10774 pF @ 50 V 517W(Tc) 32mOhms@ 42A, 10V 5V @ 250µA 270 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-247AC
質量保證
B-1 		來自供應商的訂

IRFP4868PBF

IRFP4868PBF
INFINEON

692  

預計 11個工作天

核友型號：st70448937

Infineon Technologies N-Channel MOSFET (Metal Oxide) 300V 10V 70A (Tc) 10774 pF @ 50 V 517W(Tc) 32mOhms@ 42A, 10V 5V @ 250µA 270 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-247AC
質量保證
B-2 		來自供應商的訂

IRFP4868PBF
INFINEON TECHNOLOGIES

1,500 N/A   MOQ : 150
SPQ : 75

預計 16個工作天

核友型號：st76681745

Infineon Technologies N-Channel MOSFET (Metal Oxide) 300V 10V 70A (Tc) 10774 pF @ 50 V 517W(Tc) 32mOhms@ 42A, 10V 5V @ 250µA 270 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-247AC
質量保證
B-1 		來自供應商的訂

IRFP7430PBF

IRFP7430PBF
INFINEON

4,200 21+  

預計 11個工作天

核友型號：st71361801

Infineon Technologies HEXFET®, StrongIRFET™ N-Channel MOSFET (Metal Oxide) 40V 6V, 10V 195A(Tc) 14240 pF @ 25 V 366W(Tc) 1.3mOhms @ 100A, 10V 3.9V @ 250µA 460 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-247AC
質量保證
B-2 		來自供應商的訂

IRFP7430PBF

IRFP7430PBF
INFINEON

RoHS
2,368 12+   MOQ : 2,368
SPQ : 1

預計 11個工作天

核友型號：st76488674

Infineon Technologies HEXFET®, StrongIRFET™ N-Channel MOSFET (Metal Oxide) 40V 6V, 10V 195A(Tc) 14240 pF @ 25 V 366W(Tc) 1.3mOhms @ 100A, 10V 3.9V @ 250µA 460 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-247AC
質量保證
B-1 		來自供應商的訂
海外位置

IRFP7430PBF

IRFP7430PBF
INFINEON

2,878 22+  

預計 16個工作天

核友型號：st49404613

Infineon Technologies HEXFET®, StrongIRFET™ N-Channel MOSFET (Metal Oxide) 40V 6V, 10V 195A(Tc) 14240 pF @ 25 V 366W(Tc) 1.3mOhms @ 100A, 10V 3.9V @ 250µA 460 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-247AC
質量保證
B-1 		來自供應商的訂

IRFP7530PBF

IRFP7530PBF
INFINEON

30  

預計 11個工作天

核友型號：st75141463

Infineon Technologies HEXFET®, StrongIRFET™ N-Channel MOSFET (Metal Oxide) 60V 6V, 10V 195A(Tc) 13703 pF @ 25 V 341W(Tc) 2mOhms @ 100A, 10V 3.7V @ 250µA 411 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-247-3
質量保證
B-1 		來自供應商的訂

IRFP7530PBF

IRFP7530PBF
INFINEON

1,000 17+  

預計 11個工作天

核友型號：st71361802

Infineon Technologies HEXFET®, StrongIRFET™ N-Channel MOSFET (Metal Oxide) 60V 6V, 10V 195A(Tc) 13703 pF @ 25 V 341W(Tc) 2mOhms @ 100A, 10V 3.7V @ 250µA 411 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-247-3
質量保證
B-1 		來自供應商的訂

IRFP7530PBF

IRFP7530PBF
INFINEON

1,100 21+  

預計 11個工作天

核友型號：st75024921

Infineon Technologies HEXFET®, StrongIRFET™ N-Channel MOSFET (Metal Oxide) 60V 6V, 10V 195A(Tc) 13703 pF @ 25 V 341W(Tc) 2mOhms @ 100A, 10V 3.7V @ 250µA 411 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-247-3
質量保證
B-1 		來自供應商的訂

IRFP7537PBF

IRFP7537PBF
INFINEON

10  

預計 11個工作天

核友型號：st75141464

Infineon Technologies HEXFET®, StrongIRFET™ N-Channel MOSFET (Metal Oxide) 60V 6V, 10V 172A(Tc) 7020 pF @ 25 V 230W(Tc) 3.3mOhms @ 100A, 10V 3.7V @ 150µA 210 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-247-3
質量保證
B-2 		來自供應商的訂

IRFP7537PBF

IRFP7537PBF
INFINEON

RoHS
20,000 21+   MOQ : 500
SPQ : 1

預計 11個工作天

核友型號：st76474166

Infineon Technologies HEXFET®, StrongIRFET™ N-Channel MOSFET (Metal Oxide) 60V 6V, 10V 172A(Tc) 7020 pF @ 25 V 230W(Tc) 3.3mOhms @ 100A, 10V 3.7V @ 150µA 210 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-247-3
質量保證
B-1 		來自供應商的訂

IRFP90N20DPBF

IRFP90N20DPBF
INFINEON

5  

預計 11個工作天

核友型號：st75141465

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 200V 10V 94A(Tc) 6040 pF @ 25 V 580W(Tc) 23mOhms @ 56A, 10V 5V @ 250µA 270 nC @ 10 V ±30V -55°C ~ 175°C (TJ) Through Hole TO-247AC
質量保證
B-1 		來自供應商的訂

IRFP9140NPBF

IRFP9140NPBF
INFINEON

73  

預計 11個工作天

核友型號：st75141466

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 100V 10V 23A (Tc) 1300 pF @ 25 V 140W (Tc) 117mOhms @ 13A, 10V 4V @ 250µA 97 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-247AC
質量保證
B-2 		來自供應商的訂

IRFP9140NPBF

IRFP9140NPBF
INFINEON

RoHS
16,000 22+   MOQ : 1,000
SPQ : 1

預計 11個工作天

核友型號：st76464991

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 100V 10V 23A (Tc) 1300 pF @ 25 V 140W (Tc) 117mOhms @ 13A, 10V 4V @ 250µA 97 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-247AC
質量保證
B-1 		來自供應商的訂
海外位置

IRFP9140NPBF

IRFP9140NPBF
INFINEON

12,001 24+  

預計 16個工作天

End of Life 核友型號：st49404616

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 100V 10V 23A (Tc) 1300 pF @ 25 V 140W (Tc) 117mOhms @ 13A, 10V 4V @ 250µA 97 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-247AC
質量保證
B-1 		來自供應商的訂

IRFR024NTRLPBF
INFINEON

9  

預計 11個工作天

核友型號：st75141470

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 55V 10V 17A (Tc) 370 pF @ 25 V 45W (Tc) 75mOhm @ 10A, 10V 4V @ 250µA 20 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount PG-TO252-3
質量保證
B-1 		來自供應商的訂

IRFR024NTRLPBF
INFINEON

44 2228  

預計 7個工作天

核友型號：st68904046

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 55V 10V 17A (Tc) 370 pF @ 25 V 45W (Tc) 75mOhm @ 10A, 10V 4V @ 250µA 20 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount PG-TO252-3
質量保證
B-1 		來自供應商的訂

IRFR024NTRPBF
INFINEON

22,422  

預計 11個工作天

核友型號：st75141471

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 55V 10V 17A (Tc) 370 pF @ 25 V 45W (Tc) 75mOhm @ 10A, 10V 4V @ 250µA 20 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1 		來自供應商的訂

IRFR024NTRPBF
INFINEON

18,000 2206+  

預計 11個工作天

核友型號：st76085056

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 55V 10V 17A (Tc) 370 pF @ 25 V 45W (Tc) 75mOhm @ 10A, 10V 4V @ 250µA 20 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1 		來自供應商的訂
海外位置

IRFR024NTRPBF
INFINEON

77,148 25+  

預計 16個工作天

核友型號：st49404620

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 55V 10V 17A (Tc) 370 pF @ 25 V 45W (Tc) 75mOhm @ 10A, 10V 4V @ 250µA 20 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-2 		來自供應商的訂

IRFR024NTRPBF
INFINEON TECHNOLOGIES

20,000 N/A   MOQ : 2,000
SPQ : 2,000

預計 16個工作天

核友型號：st76681746

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 55V 10V 17A (Tc) 370 pF @ 25 V 45W (Tc) 75mOhm @ 10A, 10V 4V @ 250µA 20 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1 		來自供應商的訂

IRFR1010ZTRPBF
INFINEON

300  

預計 11個工作天

核友型號：st75141472

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 55V 10V 42A (Tc) 2840 pF @ 25 V 140W (Tc) 7.5mOhms @ 42A, 10V 4V @ 100µA 95 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1 		來自供應商的訂

IRFR1010ZTRPBF
INFINEON

6,735 23+  

預計 16個工作天

核友型號：st76078901

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 55V 10V 42A (Tc) 2840 pF @ 25 V 140W (Tc) 7.5mOhms @ 42A, 10V 4V @ 100µA 95 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-2 		來自供應商的訂

IRFR1010ZTRPBF
INFINEON

RoHS
7,526 22/23+   MOQ : 250
SPQ : 1

預計 11個工作天

核友型號：st76504002

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 55V 10V 42A (Tc) 2840 pF @ 25 V 140W (Tc) 7.5mOhms @ 42A, 10V 4V @ 100µA 95 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1 		來自供應商的訂

IRFR1205TRPBF

IRFR1205TRPBF
INFINEON

235  

預計 11個工作天

核友型號：st75141474

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 55V 10V 44A (Tc) 1300 pF @ 25 V 107W (Tc) 27mOhm @ 26A, 10V 4V @ 250µA 65 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-2 		來自供應商的訂

IRFR1205TRPBF

IRFR1205TRPBF
INFINEON

RoHS
21,044 22+   MOQ : 2,500
SPQ : 1

預計 11個工作天

核友型號：st76388236

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 55V 10V 44A (Tc) 1300 pF @ 25 V 107W (Tc) 27mOhm @ 26A, 10V 4V @ 250µA 65 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1 		來自供應商的訂

IRFR1205TRPBF

IRFR1205TRPBF
INFINEON

30 21+  

預計 11個工作天

核友型號：st75022235

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 55V 10V 44A (Tc) 1300 pF @ 25 V 107W (Tc) 27mOhm @ 26A, 10V 4V @ 250µA 65 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1 		來自供應商的訂

IRFR1205TRPBF,
INFINEON

30 25+  

預計 11個工作天

核友型號：st75024161

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 55V 10V 44A (Tc) 1300 pF @ 25 V 107W (Tc) 27mOhm @ 26A, 10V 4V @ 250µA 65 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1 		來自供應商的訂

IRFR120NTRLPBF

IRFR120NTRLPBF
INFINEON

200  

預計 11個工作天

核友型號：st75141475

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 10V 9.4A(Tc) 330 pF @ 25 V 48W (Tc) 210mOhms @ 5.6A, 10V 4V @ 250µA 25 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount PG-TO252-3
質量保證
B-1 		來自供應商的訂

IRFR120NTRPBF
INFINEON

4,095  

預計 11個工作天

核友型號：st75141476

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 10V 9.4A(Tc) 330 pF @ 25 V 48W (Tc) 210mOhms @ 5.6A, 10V 4V @ 250µA 25 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-2 		來自供應商的訂

IRFR120NTRPBF
INFINEON

RoHS
25,000 22+   MOQ : 2,000
SPQ : 1

預計 11個工作天

核友型號：st76372689

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 10V 9.4A(Tc) 330 pF @ 25 V 48W (Tc) 210mOhms @ 5.6A, 10V 4V @ 250µA 25 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1 		來自供應商的訂
海外位置

IRFR120NTRPBF
INFINEON

42,545 23+  

預計 16個工作天

核友型號：st49404625

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 10V 9.4A(Tc) 330 pF @ 25 V 48W (Tc) 210mOhms @ 5.6A, 10V 4V @ 250µA 25 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-2 		來自供應商的訂

IRFR120NTRPBF
INFINEON TECHNOLOGIES

227,507 N/A   MOQ : 2,000
SPQ : 2,000

預計 16個工作天

核友型號：st76681747

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 10V 9.4A(Tc) 330 pF @ 25 V 48W (Tc) 210mOhms @ 5.6A, 10V 4V @ 250µA 25 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1 		來自供應商的訂

IRFR12N25DPBF
INFINEON

305 NA  

預計 7個工作天

核友型號：st68904056

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 250V 10V 14A (Tc) 810 pF @ 25 V 144W(Tc) 260mOhms @ 8.4A, 10V 5V @ 250µA 35 nC @ 10 V ±30V -55°C ~ 175°C (TJ) AEC-Q101 Surface Mount TO-252AA (DPAK)
質量保證
B-1 		來自供應商的訂
5  

預計 11個工作天

核友型號：st75141477

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 150V 10V 14A (Tc) 620 pF @ 25 V -55°C ~ 150°C (TJ) 180mOhms @ 8.3A, 10V 5.5V @ 250µA 29 nC @ 10 V ±30V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1 		來自供應商的訂
1,773  

預計 11個工作天

核友型號：st70448938

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 200V 10V 13A (Tc) 830 pF @ 25 V 110W (Tc) 235mOhms @ 8A, 10V 5.5V @ 250µA 38 nC @ 10 V ±30V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1 		來自供應商的訂
1,773  

預計 11個工作天

核友型號：st70448939

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 200V 10V 13A (Tc) 830 pF @ 25 V 110W (Tc) 235mOhms @ 8A, 10V 5.5V @ 250µA 38 nC @ 10 V ±30V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1 		來自供應商的訂
10  

預計 11個工作天

核友型號：st75141478

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 200V 10V 17A (Tc) 910 pF @ 25 V 3W (Ta), 140W (Tc) 165mOhm @ 10A, 10V 5.5V @ 250µA 41 nC @ 10 V ±30V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-2 		來自供應商的訂
RoHS
2,000 22/23+   MOQ : 1,000
SPQ : 1

預計 11個工作天

核友型號：st76436305

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 200V 10V 17A (Tc) 910 pF @ 25 V 3W (Ta), 140W (Tc) 165mOhm @ 10A, 10V 5.5V @ 250µA 41 nC @ 10 V ±30V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1 		來自供應商的訂
70 22+  

預計 11個工作天

核友型號：st75019121

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 200V 10V 17A (Tc) 910 pF @ 25 V 3W (Ta), 140W (Tc) 165mOhm @ 10A, 10V 5.5V @ 250µA 41 nC @ 10 V ±30V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1 		來自供應商的訂

IRFR210
INTERNATIONAL RECTIFIER

75 92  

預計 11個工作天

核友型號：st65380934

INTERNATIONAL RECTIFIER N-Channel MOSFET (Metal Oxide) 200V 10V 2.6A (Tc) 140 pF @ 25 V 2.5W (Ta), 25W (Tc) 1.5Ohms @ 1.6A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Surface Mount DPAK
質量保證
B-1 		來自供應商的訂

IRFR220NTRLPBF
INFINEON

50  

預計 11個工作天

核友型號：st75141480

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 200V 10V 5A (Tc) 300 pF @ 25 V 43W (Tc) 600mOhm @ 2.9A, 10V 4V @ 250µA 23 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-2 		來自供應商的訂

IRFR220NTRLPBF
INFINEON TECHNOLOGIES

5,699 N/A   MOQ : 780
SPQ : 30

預計 16個工作天

核友型號：st76681748

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 200V 10V 5A (Tc) 300 pF @ 25 V 43W (Tc) 600mOhm @ 2.9A, 10V 4V @ 250µA 23 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-1 		來自供應商的訂

IRFR220NTRPBF
INFINEON

553  

預計 11個工作天

核友型號：st75141481

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 200V 10V 5A (Tc) 300 pF @ 25 V 43W (Tc) 600mOhm @ 2.9A, 10V 4V @ 250µA 23 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-2 		來自供應商的訂

IRFR220NTRPBF
INFINEON

RoHS
2,000 22/23+   MOQ : 2,000
SPQ : 1

預計 11個工作天

核友型號：st76375952

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 200V 10V 5A (Tc) 300 pF @ 25 V 43W (Tc) 600mOhm @ 2.9A, 10V 4V @ 250µA 23 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
 來自供應商的訂

IRFR220NTRPBF
INFINEON

40,000 24+  

預計 16個工作天

核友型號：st60358845

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 200V 10V 5A (Tc) 300 pF @ 25 V 43W (Tc) 600mOhm @ 2.9A, 10V 4V @ 250µA 23 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)
質量保證
B-2 		來自供應商的訂

IRFR220NTRPBF
INFINEON TECHNOLOGIES

116,900 N/A   MOQ : 2,000
SPQ : 2,000

預計 16個工作天

核友型號：st76681749

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 200V 10V 5A (Tc) 300 pF @ 25 V 43W (Tc) 600mOhm @ 2.9A, 10V 4V @ 250µA 23 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount TO-252AA (DPAK)

Recommended Rectifiers - FETs