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庫存類別供應商排名	庫存所在位置	型號 / 製造商 / 其他	庫存量	生產年份/批號	最低訂貨數量 / 後續訂購數量	預定出貨日	資訊核友管理編號	Manufacturer	Series	FET Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Operating Temperature Range	Mounting Type	Device Package	Technology	FET Feature
質量保證 B-1	來自供應商的訂	IRFU120NPBF INFINEON TECHNOLOGIES	3,000		MOQ : 3,000 SPQ : 1	預計 11個工作天	核友型號：st70647332	Infineon Technologies	HEXFETR	N-Channel	100V	10V	9.4A(Tc)	330 pF @ 25 V	48W(Tc)	210mOhms @ 5.6A, 10V	4V @ 250μA	25 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	IPAK(TO-251AA)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFU220NPBF INFINEON	8,280			預計 11個工作天	核友型號：st75141573	Infineon Technologies	HEXFETR	N-Channel	200V	10V	5A(Tc)	300 pF @ 25 V	43W(Tc)	600mOhms @ 2.9A, 10V	4V @ 250μA	23 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	IPAK(TO-251AA)	Mosfet (Metal Oxide)	Standard
質量保證 B-1	來自供應商的訂	IRFU220NPBF INFINEON	2,545	20+		預計 11個工作天	核友型號：st71361821	Infineon Technologies	HEXFETR	N-Channel	200V	10V	5A(Tc)	300 pF @ 25 V	43W(Tc)	600mOhms @ 2.9A, 10V	4V @ 250μA	23 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	IPAK(TO-251AA)	Mosfet (Metal Oxide)	Standard
質量保證 B-1	來自供應商的訂	IRFU2405PBF INFINEON	8			預計 11個工作天	核友型號：st75141575	Infineon Technologies	HEXFETR	N-Channel	55V	10V	56A(Tc)	2430 pF @ 25 V	110W(Tc)	16mOhms @ 34A, 10V	4V @ 250μA	110 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	IPAK(TO-251AA)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFU3410PBF INFINEON	84			預計 11個工作天	核友型號：st75141577	Infineon Technologies	HEXFETR	N-Channel	100V	10V	31A(Tc)	1690 pF @ 25 V	3W(Ta), 110W(Tc)	39mOhms @ 18A, 10V	4V @ 250μA	56 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	IPAK(TO-251AA)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFU3410PBF INFINEON TECHNOLOGIES	3,000		MOQ : 3,000 SPQ : 1	預計 11個工作天	核友型號：st70647333	Infineon Technologies	HEXFETR	N-Channel	100V	10V	31A(Tc)	1690 pF @ 25 V	3W(Ta), 110W(Tc)	39mOhms @ 18A, 10V	4V @ 250μA	56 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	IPAK(TO-251AA)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFU3910PBF INFINEON	110			預計 11個工作天	核友型號：st75141578	Infineon Technologies	HEXFETR	N-Channel	100V	10V	16A(Tc)	640 pF @ 25 V	79W(Tc)	115mOhms @ 10A, 10V	4V @ 250μA	44 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	IPAK(TO-251AA)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFU3910PBF INFINEON	2,515	22+		預計 16個工作天	核友型號：st76078912	Infineon Technologies	HEXFETR	N-Channel	100V	10V	16A(Tc)	640 pF @ 25 V	79W(Tc)	115mOhms @ 10A, 10V	4V @ 250μA	44 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	IPAK(TO-251AA)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFU4510PBF INFINEON	536			預計 11個工作天	核友型號：st75141579	Infineon Technologies	HEXFETR	N-Channel	100V	10V	56A(Tc)	3031 pF @ 50 V	143W(Tc)	13.9mOhms @ 38A, 10V	4V @ 100μA	81 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	IPAK(TO-251AA)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFU4615PBF INFINEON	6,000	21+		預計 11個工作天	核友型號：st71361822	Infineon Technologies	HEXFETR	N-Channel	150V	10V	33A(Tc)	1750 pF @ 50 V	144W(Tc)	42mOhms @ 21A, 10V	5V @ 100μA	26 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	IPAK(TO-251AA)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFU5305PBF INFINEON	16			預計 11個工作天	核友型號：st75141580	Infineon Technologies	HEXFETR	P-Channel	55V	10V	31A(Tc)	1200 pF @ 25 V	110W(Tc)	65mOhms @ 16A, 10V	4V @ 250μA	63 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	IPAK(TO-251AA)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFU5410PBF INFINEON	34,560	17+		預計 11個工作天	核友型號：st71361823	Infineon Technologies	HEXFETR	P-Channel	100V	10V	13A(Tc)	760 pF @ 25 V	66W(Tc)	205mOhms @ 7.8A, 10V	4V @ 250μA	58 nC @ 10 V	±20V	-55°C ~ 150°C(TJ)	Through Hole	IPAK(TO-251AA)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFU5505PBF INFINEON	30			預計 11個工作天	核友型號：st75141581	Infineon Technologies	HEXFETR	P-Channel	55V	10V	18A(Tc)	650 pF @ 25 V	57W(Tc)	110mOhms @ 9.6A, 10V	4V @ 250μA	32 nC @ 10 V	±20V	-55°C ~ 150°C(TJ)	Through Hole	IPAK(TO-251AA)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFU7440PBF INFINEON	10			預計 11個工作天	核友型號：st75141582	Infineon Technologies	HEXFETR	N-Channel	40V	6V, 10V	90A(Tc)	4610 pF @ 25 V	140W(Tc)	2.4mOhms @ 90A, 10V	3.9V @ 100μA	134 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	IPAK(TO-251AA)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFU7740PBF INFINEON TECHNOLOGIES	3,000		MOQ : 3,000 SPQ : 1	預計 11個工作天	核友型號：st70647334	Infineon Technologies	HEXFETR, StrongIRFET?	N-Channel	75V	6V, 10V	87A(Tc)	4430 pF @ 25 V	140W(Tc)	7.2mOhms @ 52A, 10V	3.7V @ 100μA	126 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	IPAK(TO-251AA)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFU9024NPBF INFINEON	5,625	22+		預計 11個工作天	核友型號：st71361824	Infineon Technologies	HEXFETR	P-Channel	55V	10V	11A(Tc)	350 pF @ 25 V	38W(Tc)	175mOhms @ 6.6A, 10V	4V @ 250μA	19 nC @ 10 V	±20V	-55°C ~ 150°C(TJ)	Through Hole	IPAK(TO-251AA)	Mosfet (Metal Oxide)	Standard
質量保證 B-1	來自供應商的訂	IRFU9024NPBF INFINEON	3			預計 11個工作天	核友型號：st75141583	Infineon Technologies	HEXFETR	P-Channel	55V	10V	11A(Tc)	350 pF @ 25 V	38W(Tc)	175mOhms @ 6.6A, 10V	4V @ 250μA	19 nC @ 10 V	±20V	-55°C ~ 150°C(TJ)	Through Hole	IPAK(TO-251AA)	Mosfet (Metal Oxide)	Standard
質量保證 B-1	來自供應商的訂海外位置	IRFU9024NPBF INFINEON	1,990	24+		預計 16個工作天	核友型號：st49404716	Infineon Technologies	HEXFETR	P-Channel	55V	10V	11A(Tc)	350 pF @ 25 V	38W(Tc)	175mOhms @ 6.6A, 10V	4V @ 250μA	19 nC @ 10 V	±20V	-55°C ~ 150°C(TJ)	Through Hole	IPAK(TO-251AA)	Mosfet (Metal Oxide)	Standard
質量保證 B-1	來自供應商的訂	IRFZ24NPBF INFINEON	24			預計 11個工作天	核友型號：st75141584	Infineon Technologies	HEXFETR	N-Channel	55V	10V	17A(Tc)	370 pF @ 25 V	45W(Tc)	70mOhms @ 10A, 10V	4V @ 250μA	20 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFZ24NPBF INFINEON	10,798	24+		預計 16個工作天	核友型號：st76078913	Infineon Technologies	HEXFETR	N-Channel	55V	10V	17A(Tc)	370 pF @ 25 V	45W(Tc)	70mOhms @ 10A, 10V	4V @ 250μA	20 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFZ24NPBF INFINEON TECHNOLOGIES	1,000		MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st72742501	Infineon Technologies	HEXFETR	N-Channel	55V	10V	17A(Tc)	370 pF @ 25 V	45W(Tc)	70mOhms @ 10A, 10V	4V @ 250μA	20 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFZ34NPBF INFINEON TECHNOLOGIES	1,000		MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st72742502	Infineon Technologies	HEXFETR	N-Channel	55V	10V	29A(Tc)	700 pF @ 25 V	68W(Tc)	40mOhms @ 16A, 10V	4V @ 250μA	34 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂海外位置	IRFZ34NPBF INFINEON	9,426	24+		預計 16個工作天	核友型號：st49404719	Infineon Technologies	HEXFETR	N-Channel	55V	10V	29A(Tc)	700 pF @ 25 V	68W(Tc)	40mOhms @ 16A, 10V	4V @ 250μA	34 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)	Standard
質量保證 B-1	來自供應商的訂	IRFZ34NSTRLPBF INFINEON	4,793	22+		預計 16個工作天	核友型號：st76078914	Infineon Technologies	HEXFETR	N-Channel	55V	10V	29A(Tc)	700 pF @ 25 V	3.8W(Ta), 68W(Tc)	40mOhms @ 16A, 10V	4V @ 250μA	34 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Surface Mount	D2PAK	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFZ44ESTRLPBF INFINEON	10			預計 11個工作天	核友型號：st75141585	Infineon Technologies	HEXFETR	N-Channel	60V	10V	48A(Tc)	1360 pF @ 25 V	110W(Tc)	23mOhms @ 29A, 10V	4V @ 250μA	60 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Surface Mount	D2PAK	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFZ44NPBF INFINEON	1,081			預計 11個工作天	核友型號：st75141586	Infineon Technologies	HEXFETR	N-Channel	55V	10V	49A(Tc)	1470 pF @ 25 V	94W(Tc)	17.5mOhms @ 25A, 10V	4V @ 250μA	63 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFZ44NPBF INFINEON	50,000	20+		預計 11個工作天	核友型號：st71361825	Infineon Technologies	HEXFETR	N-Channel	55V	10V	49A(Tc)	1470 pF @ 25 V	94W(Tc)	17.5mOhms @ 25A, 10V	4V @ 250μA	63 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFZ44NPBF INFINEON	1,000	24+		預計 11個工作天	核友型號：st75019585	Infineon Technologies	HEXFETR	N-Channel	55V	10V	49A(Tc)	1470 pF @ 25 V	94W(Tc)	17.5mOhms @ 25A, 10V	4V @ 250μA	63 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂海外位置	IRFZ44NPBF INFINEON	10,000	26+		預計 16個工作天	核友型號：st49404721	Infineon Technologies	HEXFETR	N-Channel	55V	10V	49A(Tc)	1470 pF @ 25 V	94W(Tc)	17.5mOhms @ 25A, 10V	4V @ 250μA	63 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFZ44NPBF INFINEON TECHNOLOGIES	1,000		MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st70647335	Infineon Technologies	HEXFETR	N-Channel	55V	10V	49A(Tc)	1470 pF @ 25 V	94W(Tc)	17.5mOhms @ 25A, 10V	4V @ 250μA	63 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFZ44NSTRLPBF INFINEON	10			預計 11個工作天	核友型號：st75141587	Infineon Technologies	HEXFETR	N-Channel	55V	10V	49A(Tc)	1470 pF @ 25 V	3.8W(Ta), 94W(Tc)	17.5mOhms @ 25A, 10V	4V @ 250μA	63 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Surface Mount	D2PAK	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂海外位置	IRFZ44NSTRLPBF INFINEON	10,067	24+		預計 16個工作天	核友型號：st49404722	Infineon Technologies	HEXFETR	N-Channel	55V	10V	49A(Tc)	1470 pF @ 25 V	3.8W(Ta), 94W(Tc)	17.5mOhms @ 25A, 10V	4V @ 250μA	63 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Surface Mount	D2PAK	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFZ44NSTRLPBF INFINEON	800	25+		預計 11個工作天	核友型號：st75029248	Infineon Technologies	HEXFETR	N-Channel	55V	10V	49A(Tc)	1470 pF @ 25 V	3.8W(Ta), 94W(Tc)	17.5mOhms @ 25A, 10V	4V @ 250μA	63 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Surface Mount	D2PAK	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFZ44VPBF INFINEON TECHNOLOGIES	1,000		MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st70647336	Infineon Technologies	HEXFETR	N-Channel	60V	10V	55A(Tc)	1812 pF @ 25 V	115W(Tc)	16.5mOhms @ 31A, 10V	4V @ 250μA	67 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFZ44VZSPBF INFINEON	7			預計 11個工作天	核友型號：st75141588	Infineon Technologies	HEXFETR	N-Channel	60V	10V	57A(Tc)	1690 pF @ 25 V	92W(Tc)	12mOhms @ 34A, 10V	4V @ 250μA	65 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Surface Mount	D2PAK	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFZ44ZLPBF INFINEON	10			預計 11個工作天	核友型號：st75141589	Infineon Technologies	HEXFETR	N-Channel	55V	10V	51A(Tc)	1420 pF @ 25 V	80W(Tc)	13.9mOhms @ 31A, 10V	4V @ 250μA	43 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-262	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFZ44ZPBF INFINEON	4			預計 11個工作天	核友型號：st75141590	Infineon Technologies	HEXFETR	N-Channel	55V	10V	51A(Tc)	1420 pF @ 25 V	80W(Tc)	13.9mOhms @ 31A, 10V	4V @ 250μA	43 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFZ46NLPBF INFINEON	75			預計 11個工作天	核友型號：st75141591	Infineon Technologies	HEXFETR	N-Channel	55V	10V	53A(Tc)	1696 pF @ 25 V	3.8W(Ta), 107W(Tc)	16.5mOhms @ 28A, 10V	4V @ 250μA	72 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-262	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFZ46NPBF INFINEON	1,684	17+		預計 11個工作天	核友型號：st71361826	Infineon Technologies	HEXFETR	N-Channel	55V	10V	53A(Tc)	1696 pF @ 25 V	107W(Tc)	16.5mOhms @ 28A, 10V	4V @ 250μA	72 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFZ46NPBF INFINEON	148			預計 11個工作天	核友型號：st75141592	Infineon Technologies	HEXFETR	N-Channel	55V	10V	53A(Tc)	1696 pF @ 25 V	107W(Tc)	16.5mOhms @ 28A, 10V	4V @ 250μA	72 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFZ46NSTRLPBF INFINEON	16			預計 11個工作天	核友型號：st75141593	Infineon Technologies	HEXFETR	N-Channel	55V	10V	53A(Tc)	1696 pF @ 25 V	3.8W(Ta), 107W(Tc)	16.5mOhms @ 28A, 10V	4V @ 250μA	72 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Surface Mount	D2PAK	Mosfet (Metal Oxide)