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库存类别供应商排名	库存所在位置	型号 / 制造商 / 其他	库存量	生产批次	最低订货数量 / 后续订购数量	预定出货日	资讯核友型号	Manufacturer	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Operating Temperature Range	Applications	Mounting Type	Device Package
質量保證 B-2	来自供应商的订	IQE006NE2LM5ATMA1 INFINEON	14,065	22/23+	MOQ : 250 SPQ : 1	Approx. 11 days	核友型号：st76516298	Infineon Technologies	OptiMOS™ 5	N-Channel	MOSFET (Metal Oxide)	25V	4.5V, 10V	41A(TA), 298A(Tc)	5453 pF @ 12 V	2.1W(Ta), 89W(Tc)	0.65mOhms @ 20A, 10V	2V @ 250µA	82.1 nC @ 10 V	±16V	-55°C ~ 150°C (TJ)		Surface Mount	PG-TSON-8-4
質量保證 B-2	来自供应商的订	IQE006NE2LM5CGSCATMA1 INFINEON	9,184	22/23+	MOQ : 250 SPQ : 1	Approx. 11 days	核友型号：st76513966	Infineon Technologies	OptiMOS™ 5	N-Channel	MOSFET (Metal Oxide)	25V	4.5V, 10V	47A(TA), 310A(Tc)	5453 pF @ 12 V	2.1W(Ta), 89W(Tc)	0.58mOhms @ 20A, 10V	2V @ 250µA	82 nC @ 10 V	±16V	-55°C ~ 150°C (TJ)		Surface Mount	PG-WHTFN-9-1
質量保證 B-1	来自供应商的订	IQE008N03LM5ATMA1 INFINEON	304			Approx. 11 days	核友型号：st75140973	Infineon Technologies	OptiMOS™	N-Channel	MOSFET (Metal Oxide)	30V	4.5V, 10V	27A(TA), 253A(Tc)	5700 pF @ 15 V	2.1W(Ta), 89W(Tc)	0.85mOhms @ 20A, 10V	2V @ 250µA	64 nC @ 10 V	±16V	-55°C ~ 150°C (TJ)		Surface Mount	PG-TSON-8-4
質量保證 B-1	来自供应商的订	IQE008N03LM5ATMA1 INFINEON	53			Approx. 7 days	核友型号：st72074468	Infineon Technologies	OptiMOS™	N-Channel	MOSFET (Metal Oxide)	30V	4.5V, 10V	27A(TA), 253A(Tc)	5700 pF @ 15 V	2.1W(Ta), 89W(Tc)	0.85mOhms @ 20A, 10V	2V @ 250µA	64 nC @ 10 V	±16V	-55°C ~ 150°C (TJ)		Surface Mount	PG-TSON-8-4
質量保證 B-2	来自供应商的订	IQE013N04LM6ATMA1 INFINEON	4,739	22/23+	MOQ : 250 SPQ : 1	Approx. 11 days	核友型号：st76502233	Infineon Technologies	OptiMOS™	N-Channel	MOSFET (Metal Oxide)	40V		31A(TA), 205A(Tc)	3900 pF @ 20 V	2.5W(Ta), 107W(Tc)	1.35mOhms @ 20A, 10V	2V @ 51µA	55 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Surface Mount	PG-TSON-8-4
質量保證 B-2	来自供应商的订	IQE013N04LM6CGSCATMA1 INFINEON	17,652	22/23+	MOQ : 100 SPQ : 1	Approx. 11 days	核友型号：st76523102	Infineon Technologies	OptiMOS™ 6	N-Channel	MOSFET (Metal Oxide)	40V	4.5V, 10V	31A(TA), 205A(Tc)	3800 pF @ 20 V	2.5W(Ta), 107W(Tc)	1.35mOhms @ 20A, 10V	2V @ 51µA	41 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Surface Mount	PG-WHTFN-9-1
質量保證 B-2	来自供应商的订	IQE030N06NM5CGATMA1 INFINEON	4,073	22/23+	MOQ : 100 SPQ : 1	Approx. 11 days	核友型号：st76526953	Infineon Technologies	OptiMOS™	N-Channel	MOSFET (Metal Oxide)	60V	6V, 10V	21A(TA), 137A(Tc)	3800 pF @ 30 V	2.5W(Ta), 107W(Tc)	3mOhms @ 20A, 10V	3.3V @ 50µA	49 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Surface Mount	PG-TTFN-9-1
質量保證 B-1	来自供应商的订	IQE046N08LM5 INFINEON	640	23+		Approx. 11 days	核友型号：st75028512	Infineon Technologies	OptiMOS™ 5					99A			4.6 mOhms @ 10V	1.7V		2.3V	-55°C ~ 175°C	Industrial		PQFN 3.3x3.3 Source-Down
質量保證 B-2	来自供应商的订	IQE050N08NM5ATMA1 INFINEON	3,266	22/23+	MOQ : 100 SPQ : 1	Approx. 11 days	核友型号：st76525057	Infineon Technologies	OptiMOS™	N-Channel	MOSFET (Metal Oxide)	80V	6V, 10V	16A(TA), 101A(Tc)	2900 pF @ 40 V	2.5W(Ta), 100W(Tc)	5mOhms @ 20A, 10V	3.8V @ 49µA	43.2 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Surface Mount	PG-TSON-8-4
質量保證 B-1	来自供应商的订	IQE065N10NM5CGATMA1 INFINEON	213			Approx. 11 days	核友型号：st75140974	Infineon Technologies	OptiMOS™	N-Channel	MOSFET (Metal Oxide)	100V	6V, 10V	14A(TA), 85A(Tc)	3000 pF @ 50 V	2.5W(Ta), 100W(Tc)	6.5mOhms @ 20A, 10V	3.8V @ 48µA	42 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Surface Mount	PG-TTFN-9-1
質量保證 B-2	来自供应商的订	IQE065N10NM5CGATMA1 INFINEON	5,096	22/23+	MOQ : 250 SPQ : 1	Approx. 11 days	核友型号：st76520067	Infineon Technologies	OptiMOS™	N-Channel	MOSFET (Metal Oxide)	100V	6V, 10V	14A(TA), 85A(Tc)	3000 pF @ 50 V	2.5W(Ta), 100W(Tc)	6.5mOhms @ 20A, 10V	3.8V @ 48µA	42 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Surface Mount	PG-TTFN-9-1
質量保證 B-2	来自供应商的订	IRF100B201 INFINEON TECHNOLOGIES	95,000	N/A	MOQ : 1,000 SPQ : 1,000	Approx. 16 days	核友型号：st76681651	Infineon Technologies	IR MOSFET™	N-Channel	MOSFET (Metal Oxide)	100V	10V	192A	9500 pF @ 50 V	441W(Tc)	4.2 mOhms @ 10V	3V	255 nC @ 10 V	4V	-55°C ~ 155°C (TJ)	Standard	Through Hole	TO-220
質量保證 B-1	来自供应商的订	IRF100B201 INFINEON	17,993	21+		Approx. 11 days	核友型号：st71361736	Infineon Technologies	IR MOSFET™	N-Channel	MOSFET (Metal Oxide)	100V	10V	192A	9500 pF @ 50 V	441W(Tc)	4.2 mOhms @ 10V	3V	255 nC @ 10 V	4V	-55°C ~ 155°C (TJ)	Standard	Through Hole	TO-220
質量保證 B-1	来自供应商的订	IRF100B201 INFINEON	684			Approx. 11 days	核友型号：st75141122	Infineon Technologies	IR MOSFET™	N-Channel	MOSFET (Metal Oxide)	100V	10V	192A	9500 pF @ 50 V	441W(Tc)	4.2 mOhms @ 10V	3V	255 nC @ 10 V	4V	-55°C ~ 155°C (TJ)	Standard	Through Hole	TO-220
質量保證 B-1	来自供应商的订海外位置	IRF100B201 INFINEON	30,011	22+		Approx. 16 days	核友型号：st49404281	Infineon Technologies	IR MOSFET™	N-Channel	MOSFET (Metal Oxide)	100V	10V	192A	9500 pF @ 50 V	441W(Tc)	4.2 mOhms @ 10V	3V	255 nC @ 10 V	4V	-55°C ~ 155°C (TJ)	Standard	Through Hole	TO-220
質量保證 B-2	来自供应商的订	IRF100B202 INFINEON TECHNOLOGIES	9,000	N/A	MOQ : 600 SPQ : 300	Approx. 16 days	核友型号：st76681652	Infineon Technologies	IR MOSFET™	N-Channel	MOSFET (Metal Oxide)	100V	10V	97A	4476 pF @ 50 V	221W(Tc)	8.6 mOhms @ 10V	3V	116 nC @ 10 V	4V	-55°C ~ 175°C	Standard	Through Hole	TO-220
質量保證 B-1	来自供应商的订	IRF100B202 INFINEON	10,737	21+		Approx. 11 days	核友型号：st71361737	Infineon Technologies	IR MOSFET™	N-Channel	MOSFET (Metal Oxide)	100V	10V	97A	4476 pF @ 50 V	221W(Tc)	8.6 mOhms @ 10V	3V	116 nC @ 10 V	4V	-55°C ~ 175°C	Standard	Through Hole	TO-220
質量保證 B-2	来自供应商的订	IRF100P218AKMA1 INFINEON	4,263	22/23+	MOQ : 100 SPQ : 1	Approx. 11 days	核友型号：st76563975	Infineon Technologies	StrongIRFET™	N-Channel	MOSFET (Metal Oxide)	100V	6V, 10V	209A(Tc)	24000 pF @ 50 V	3.8W(Ta), 556W(Tc)	1.28mOhms @ 100A, 10V	3.8V @ 278µA	412 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	PG-TO247-3
質量保證 B-1	来自供应商的订	IRF100P219AKMA1 INFINEON	40			Approx. 11 days	核友型号：st75141123	Infineon Technologies	StrongIRFET™	N-Channel	MOSFET (Metal Oxide)	100V	6V, 10V	203A(Tc)	12020 pF @ 50 V	3.8W(Ta), 341W(Tc)	1.7mOhms @ 100A, 10V	3.8V @ 278µA	210 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	PG-TO247-3
質量保證 B-1	来自供应商的订	IRF100S201 INFINEON	3			Approx. 11 days	核友型号：st75141124	Infineon Technologies	HEXFET®, StrongIRFET™	N-Channel	MOSFET (Metal Oxide)	100V	10V	192A(Tc)	9500 pF @ 50 V	441W(Tc)	4.2mOhms @ 115A, 10V	4V @ 250µA	255 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Surface Mount	PG-TO263-3
質量保證 B-1	来自供应商的订	IRF1010EPBF INFINEON	5			Approx. 11 days	核友型号：st75141125	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	60V	10V	84A(Tc)	3210 pF @ 25 V	200W(Tc)	12mOhms @ 50A, 10V	4V @ 250µA	130 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB
質量保證 B-1	来自供应商的订	IRF1010EZPBF INFINEON	370			Approx. 11 days	核友型号：st75141126	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	60V	10V	75A(Tc)	2810 pF @ 25 V	140W (Tc)	8.5mOhms @ 51A, 10V	4V @ 100µA	86 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB
質量保證 B-1	来自供应商的订	IRF1010N INFINEON	10	04+		Approx. 11 days	核友型号：st75022960	Infineon Technologies	Planar Mosfet	N-Channel		55V		72A				4V					Through Hole	TO-220
質量保證 B-1	来自供应商的订	IRF1010NPBF INFINEON	8			Approx. 11 days	核友型号：st75141127	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	10V	85A(Tc)	3210 pF @ 25 V	180W(Tc)	11mOhms @ 43A, 10V	4V @ 250µA	120 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB
質量保證 B-1	来自供应商的订	IRF1010NPBF INFINEON	500	2230		Approx. 7 days	核友型号：st68903655	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	10V	85A(Tc)	3210 pF @ 25 V	180W(Tc)	11mOhms @ 43A, 10V	4V @ 250µA	120 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB
質量保證 B-1	来自供应商的订	IRF1010NSPBF INFINEON	27	1446		Approx. 7 days	核友型号：st68903656	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	10V	85A(Tc)	3210 pF @ 25 V	180W(Tc)	11mOhms @ 43A, 10V	4V @ 250µA	120 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Surface Mount	D2PAK
質量保證 B-2	来自供应商的订	IRF1010NSTRLPBF INFINEON	1,600	19+	MOQ : 1,000 SPQ : 1	Approx. 11 days	核友型号：st76436303	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	10V	85A(Tc)	3210 pF @ 25 V	180W(Tc)	11mOhms @ 43A, 10V	4V @ 250µA	120 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Surface Mount	D2PAK
質量保證 B-1	来自供应商的订	IRF1010NSTRLPBF INFINEON	25			Approx. 11 days	核友型号：st75141128	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	10V	85A(Tc)	3210 pF @ 25 V	180W(Tc)	11mOhms @ 43A, 10V	4V @ 250µA	120 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Surface Mount	D2PAK
質量保證 B-1	来自供应商的订	IRF1010ZPBF INFINEON	50			Approx. 11 days	核友型号：st75141129	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	10V	75A(Tc)	2840 pF @ 25 V	140W (Tc)	7.5mOhms @ 75A, 10V	4V @ 250µA	95 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB
質量保證 B-1	来自供应商的订	IRF1010ZSTRLPBF INFINEON	1,200	2318+		Approx. 16 days	核友型号：st76078861	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	10V	75A(Tc)	2840 pF @ 25 V	140W (Tc)	7.5mOhms @ 75A, 10V	4V @ 250µA	95 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Surface Mount	D2PAK
質量保證 B-2	来自供应商的订	IRF1010ZSTRLPBF INFINEON	4,440	22/23+	MOQ : 500 SPQ : 1	Approx. 11 days	核友型号：st76469022	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	55V	10V	75A(Tc)	2840 pF @ 25 V	140W (Tc)	7.5mOhms @ 75A, 10V	4V @ 250µA	95 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Surface Mount	D2PAK
質量保證 B-2	来自供应商的订	IRF1018EPBF INFINEON	20,000	22/23+	MOQ : 1,000 SPQ : 1	Approx. 11 days	核友型号：st76411471	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	60V	10V	79A(Tc)	2290 pF @ 50 V	110W (Tc)	8.4mOhms @ 47A, 10V	4V @ 100µA	69 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB
質量保證 B-1	来自供应商的订	IRF1018ESTRLPBF INFINEON	168			Approx. 11 days	核友型号：st75141130	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	60V	10V	79A(Tc)	2290 pF @ 50 V	110W (Tc)	8.4mOhms @ 47A, 10V	4V @ 100µA	69 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Surface Mount	D2PAK
質量保證 B-1	来自供应商的订	IRF1104PBF INFINEON	8			Approx. 11 days	核友型号：st75141131	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	40V	10V	100A (Tc)	2900 pF @ 25 V	170W(Tc)	9mOhms @ 60A, 10V	4V @ 250µA	93 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB
質量保證 B-1	来自供应商的订	IRF1310NPBF INFINEON	40			Approx. 11 days	核友型号：st75141132	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10V	42A (Tc)	1900 pF @ 25 V	-55°C ~ 150°C (TJ)	36mOhms @ 22A, 10V	4V @ 250µA	110 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB
質量保證 B-1	来自供应商的订	IRF1310NSTRLPBF INFINEON	50			Approx. 11 days	核友型号：st75141133	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10V	42A (Tc)	1900 pF @ 25 V	3.8W(Ta), 160W(Tc)	36mOhms @ 22A, 10V	4V @ 250µA	110 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Surface Mount	D2PAK
質量保證 B-1	来自供应商的订	IRF1324PBF INFINEON	9			Approx. 11 days	核友型号：st75141134	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	24V	10V	195A(Tc)	7590 pF @ 24 V	300W(Tc)	1.5mOhms @ 195A, 10V	4V @ 250µA	240 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB
質量保證 B-1	来自供应商的订	IRF135B203 INFINEON	14,006	17+		Approx. 11 days	核友型号：st71361738	Infineon Technologies	StrongIRFET™	N-Channel	MOSFET (Metal Oxide)	135V	10V	129A(Tc)	9700 pF @ 50 V	441W(Tc)	8.4mOhms @ 77A, 10V	4V @ 250µA	270 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	PG-TO220-3
質量保證 B-1	来自供应商的订	IRF135S203 INFINEON	10			Approx. 11 days	核友型号：st75141135	Infineon Technologies	HEXFET®, StrongIRFET™	N-Channel	MOSFET (Metal Oxide)	135V	10V	129A(Tc)	9700 pF @ 50 V	441W(Tc)	8.4mOhms @ 77A, 10V	4V @ 250µA	270 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Surface Mount	PG-TO263-3-2
質量保證 B-1	来自供应商的订	IRF1404PBF INFINEON	27,129	21+		Approx. 11 days	核友型号：st71361739	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	40V	10V	202A(Tc)	5669 pF @ 25 V	333W(Tc)	4mOhms @ 121A, 10V	4V @ 250µA	196 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB
質量保證 B-1	来自供应商的订	IRF1404PBF INFINEON	960			Approx. 11 days	核友型号：st75141136	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	40V	10V	202A(Tc)	5669 pF @ 25 V	333W(Tc)	4mOhms @ 121A, 10V	4V @ 250µA	196 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB
質量保證 B-2	来自供应商的订	IRF1404PBF INFINEON	2,350	22/23+	MOQ : 1,000 SPQ : 1	Approx. 11 days	核友型号：st76422861	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	40V	10V	202A(Tc)	5669 pF @ 25 V	333W(Tc)	4mOhms @ 121A, 10V	4V @ 250µA	196 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB
質量保證 B-2	来自供应商的订	IRF1404PBF INFINEON TECHNOLOGIES	300,000	N/A	MOQ : 1,000 SPQ : 1,000	Approx. 16 days	核友型号：st76681653	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	40V	10V	202A(Tc)	5669 pF @ 25 V	333W(Tc)	4mOhms @ 121A, 10V	4V @ 250µA	196 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB
質量保證 B-1	来自供应商的订	IRF1404STRLPBF INFINEON	10			Approx. 11 days	核友型号：st75141137	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	40V	10V	162A(Tc)	7360 pF @ 25 V	3.8W(Ta), 200W(Tc)	4mOhms @ 95A, 10V	4V @ 250µA	200 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Surface Mount	D2PAK
質量保證 B-2	来自供应商的订	IRF1404ZPBF INFINEON TECHNOLOGIES	16,000	N/A	MOQ : 1,000 SPQ : 1,000	Approx. 16 days	核友型号：st76681654	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	40V	10V	180A (Tc)	4340 pF @ 25 V	200W(Tc)	3.7mOhms @ 75A, 10V	4V @ 250µA	150 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB
質量保證 B-1	来自供应商的订	IRF1404ZPBF INFINEON	36			Approx. 11 days	核友型号：st75141138	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	40V	10V	180A (Tc)	4340 pF @ 25 V	200W(Tc)	3.7mOhms @ 75A, 10V	4V @ 250µA	150 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB
質量保證 B-2	来自供应商的订	IRF1404ZPBF INFINEON	2,000	22/23+	MOQ : 1,000 SPQ : 1	Approx. 11 days	核友型号：st76419231	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	40V	10V	180A (Tc)	4340 pF @ 25 V	200W(Tc)	3.7mOhms @ 75A, 10V	4V @ 250µA	150 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB
質量保證 B-1	来自供应商的订	IRF1404ZPBF INFINEON	7,190	21+		Approx. 11 days	核友型号：st71361740	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	40V	10V	180A (Tc)	4340 pF @ 25 V	200W(Tc)	3.7mOhms @ 75A, 10V	4V @ 250µA	150 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB
質量保證 B-1	来自供应商的订	IRF1404ZSPBF INFINEON	4			Approx. 11 days	核友型号：st75141139	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	40V	10V	180A (Tc)	4340 pF @ 25 V	200W(Tc)	3.7mOhms @ 75A, 10V	4V @ 150µA	150 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Surface Mount	D2PAK
質量保證 B-2	来自供应商的订	IRF1404ZSTRLPBF INFINEON	2,227	22/23+	MOQ : 250 SPQ : 1	Approx. 11 days	核友型号：st76509952	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	40V	10V	180A (Tc)	4340 pF @ 25 V	200W(Tc)	3.7mOhms @ 75A, 10V	4V @ 150µA	150 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Surface Mount	PG-TO263-3