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ดาวน์โหลดผลการค้นหา (Excel File)

ที่ตั้งสต็อกสินค้า	หมายเลขชิ้นส่วน / ผู้ผลิต / More information	คำอธิบาย / หมายเลขการจัดการของคอร์สตาฟ	Manufacturer	Series	FET Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Vgs (Max)	Technology	FET Feature	Operating Temperature Range	Mounting Type	Device Package
Partner Stock	1N60G UMW	N-Channel 600 V 1A (Tj) Surface Mount SOT-223	UMW	UMW	N-Channel	600 V	10V	1A (Tj)	150 pF @ 25 V	-	11Ohm @ 500mA, 10V	4V @ 250µA	±30V	MOSFET (Metal Oxide)	-	150°C (TJ)	Surface Mount	SOT-223
Partner Stock	1N60L UMW	N-Channel 600 V 1A (Tj) Surface Mount TO-252 (DPAK)	UMW	UMW	N-Channel	600 V	10V	1A (Tj)	150 pF @ 25 V	-	11Ohm @ 500mA, 10V	4V @ 250µA	±30V	MOSFET (Metal Oxide)	-	150°C (TJ)	Surface Mount	TO-252 (DPAK)
Partner Stock	1N60L UMW	N-Channel 600 V 1A (Tj) Surface Mount TO-252 (DPAK)	UMW	UMW	N-Channel	600 V	10V	1A (Tj)	150 pF @ 25 V	-	11Ohm @ 500mA, 10V	4V @ 250µA	±30V	MOSFET (Metal Oxide)	-	150°C (TJ)	Surface Mount	TO-252 (DPAK)
Partner Stock	1N65G UMW	N-Channel 650 V 1A (Tj) Surface Mount SOT-223	UMW	UMW	N-Channel	650 V	10V	1A (Tj)	150 pF @ 25 V	-	11Ohm @ 500mA, 10V	4V @ 250µA	±30V	MOSFET (Metal Oxide)	-	150°C (TJ)	Surface Mount	SOT-223
Partner Stock	1N65G UMW	N-Channel 650 V 1A (Tj) Surface Mount SOT-223	UMW	UMW	N-Channel	650 V	10V	1A (Tj)	150 pF @ 25 V	-	11Ohm @ 500mA, 10V	4V @ 250µA	±30V	MOSFET (Metal Oxide)	-	150°C (TJ)	Surface Mount	SOT-223
Partner Stock	1N65L UMW	N-Channel 650 V 1A (Tj) Surface Mount TO-252 (DPAK)	UMW	UMW	N-Channel	650 V	10V	1A (Tj)	150 pF @ 25 V	-	11Ohm @ 500mA, 10V	4V @ 250µA	±30V	MOSFET (Metal Oxide)	-	150°C (TJ)	Surface Mount	TO-252 (DPAK)
Partner Stock	1N65L UMW	N-Channel 650 V 1A (Tj) Surface Mount TO-252 (DPAK)	UMW	UMW	N-Channel	650 V	10V	1A (Tj)	150 pF @ 25 V	-	11Ohm @ 500mA, 10V	4V @ 250µA	±30V	MOSFET (Metal Oxide)	-	150°C (TJ)	Surface Mount	TO-252 (DPAK)
Partner Stock	2002A GOFORD SEMICONDUCTOR	N-Channel 190 V 5A (Tc) 1.4W (Tc) Surface Mount SOT-23-6L	Goford Semiconductor	-	N-Channel	190 V	4.5V, 10V	5A (Tc)	733 pF @ 100 V	1.4W (Tc)	540mOhm @ 1A, 10V	3V @ 250µA	±20V	MOSFET (Metal Oxide)	-	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6L
Partner Stock	20N06 GOFORD SEMICONDUCTOR	N-Channel 60 V 25A (Tc) 41W (Tc) Surface Mount TO-252	Goford Semiconductor	-	N-Channel	60 V	4.5V, 10V	25A (Tc)	1609 pF @ 30 V	41W (Tc)	24mOhm @ 20A, 10V	2.5V @ 250µA	±20V	MOSFET (Metal Oxide)	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-252
Partner Stock	2300F GOFORD SEMICONDUCTOR	N-Channel 6A (Tc) 1.25W (Tc) Surface Mount SOT-23-3	Goford Semiconductor	TrenchFET®	N-Channel		2.5V, 4.5V	6A (Tc)		1.25W (Tc)	27mOhm @ 2.3A, 4.5V	900mV @ 250µA	±12V	MOSFET (Metal Oxide)	-	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3
Partner Stock	2301 GOFORD SEMICONDUCTOR	P-Channel 3A (Tc) 1W (Tc) Surface Mount SOT-23-3	Goford Semiconductor	TrenchFET®	P-Channel		2.5V, 4.5V	3A (Tc)		1W (Tc)	56mOhm @ 1.7A, 4.5V	900mV @ 250µA	±10V	MOSFET (Metal Oxide)	-	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3
Partner Stock	2301H GOFORD SEMICONDUCTOR	P-Channel 2.8A (Tc) 890mW (Tc) Surface Mount SOT-23-3	Goford Semiconductor	TrenchFET®	P-Channel		4.5V, 10V	2.8A (Tc)		890mW (Tc)	75mOhm @ 3A, 10V	2.4V @ 250µA	±20V	MOSFET (Metal Oxide)	-	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3
Partner Stock	2302 GOFORD SEMICONDUCTOR	N-Channel 4.3A (Tc) 1W (Tc) Surface Mount SOT-23-3	Goford Semiconductor	TrenchFET®	N-Channel		2.5V, 4.5V	4.3A (Tc)		1W (Tc)	27mOhm @ 2.2A, 4.5V	1.1V @ 250µA	±10V	MOSFET (Metal Oxide)	-	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3
Partner Stock	25N06 UMW	N-Channel 60 V 25A (Tc) 36.2W (Tc) Surface Mount TO-252 (DPAK)	UMW	UMW	N-Channel	60 V	4.5V, 10V	25A (Tc)	939 pF @ 30 V	36.2W (Tc)	29mOhm @ 19A, 10V	2V @ 250µA	±20V	MOSFET (Metal Oxide)	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-252 (DPAK)
Partner Stock	25N06 UMW	N-Channel 60 V 25A (Tc) 36.2W (Tc) Surface Mount TO-252 (DPAK)	UMW	UMW	N-Channel	60 V	4.5V, 10V	25A (Tc)	939 pF @ 30 V	36.2W (Tc)	29mOhm @ 19A, 10V	2V @ 250µA	±20V	MOSFET (Metal Oxide)	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-252 (DPAK)
Partner Stock	25P06 GOFORD SEMICONDUCTOR	P-Channel 25A (Tc) 100W (Tc) Surface Mount TO-252	Goford Semiconductor	TrenchFET®	P-Channel		10V	25A (Tc)		100W (Tc)	32mOhm @ 12A, 10V	3V @ 250µA	±20V	MOSFET (Metal Oxide)	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-252
Partner Stock	2N60G UMW	N-Channel 600 V 2A (Tc) 44W (Tc) Surface Mount SOT-223-4	UMW	*	N-Channel	600 V	10V	2A (Tc)		44W (Tc)	4.5Ohm @ 1A, 10V	4V @ 250µA	±30V	MOSFET (Metal Oxide)	-	-55°C ~ 155°C (TJ)	Surface Mount	SOT-223-4
Partner Stock	2N60G UMW	N-Channel 600 V 2A (Tc) 44W (Tc) Surface Mount SOT-223-4	UMW	*	N-Channel	600 V	10V	2A (Tc)		44W (Tc)	4.5Ohm @ 1A, 10V	4V @ 250µA	±30V	MOSFET (Metal Oxide)	-	-55°C ~ 155°C (TJ)	Surface Mount	SOT-223-4
Partner Stock	2N60L UMW	N-Channel 600 V 2A (Tc) 44W (Tc) Surface Mount TO-252 (DPAK)	UMW	*	N-Channel	600 V	10V	2A (Tc)		44W (Tc)	4.5Ohm @ 1A, 10V	4V @ 250µA	±30V	MOSFET (Metal Oxide)	-	-55°C ~ 155°C (TJ)	Surface Mount	TO-252 (DPAK)
Partner Stock	2N60L UMW	N-Channel 600 V 2A (Tc) 44W (Tc) Surface Mount TO-252 (DPAK)	UMW	*	N-Channel	600 V	10V	2A (Tc)		44W (Tc)	4.5Ohm @ 1A, 10V	4V @ 250µA	±30V	MOSFET (Metal Oxide)	-	-55°C ~ 155°C (TJ)	Surface Mount	TO-252 (DPAK)
Partner Stock	2N65G UMW	N-Channel 650 V 2A (Tj) Surface Mount SOT-223	UMW	UMW	N-Channel	650 V	10V	2A (Tj)	311 pF @ 25 V	-	5.5Ohm @ 1A, 10V	4V @ 250µA	±30V	MOSFET (Metal Oxide)	-	150°C (TJ)	Surface Mount	SOT-223
Partner Stock	2N65G UMW	N-Channel 650 V 2A (Tj) Surface Mount SOT-223	UMW	UMW	N-Channel	650 V	10V	2A (Tj)	311 pF @ 25 V	-	5.5Ohm @ 1A, 10V	4V @ 250µA	±30V	MOSFET (Metal Oxide)	-	150°C (TJ)	Surface Mount	SOT-223
Partner Stock	2N65L UMW	N-Channel 650 V 2A (Tj) Surface Mount TO-252 (DPAK)	UMW	UMW	N-Channel	650 V	10V	2A (Tj)	311 pF @ 25 V	-	5.5Ohm @ 1A, 10V	4V @ 250µA	±30V	MOSFET (Metal Oxide)	-	150°C (TJ)	Surface Mount	TO-252 (DPAK)
Partner Stock	2N65L UMW	N-Channel 650 V 2A (Tj) Surface Mount TO-252 (DPAK)	UMW	UMW	N-Channel	650 V	10V	2A (Tj)	311 pF @ 25 V	-	5.5Ohm @ 1A, 10V	4V @ 250µA	±30V	MOSFET (Metal Oxide)	-	150°C (TJ)	Surface Mount	TO-252 (DPAK)
Partner Stock	2N6660 VISHAY SILICONIX	N-Channel 60 V 990mA (Tc) 725mW (Ta), 6.25W (Tc) Through Hole TO-205AD (TO-39)	Vishay Siliconix	-	N-Channel	60 V	5V, 10V	990mA (Tc)	50 pF @ 25 V	725mW (Ta), 6.25W (Tc)	3Ohm @ 1A, 10V	2V @ 1mA	±20V	MOSFET (Metal Oxide)	-	-55°C ~ 150°C (TJ)	Through Hole	TO-205AD (TO-39)
Partner Stock	2N6660-2 VISHAY SILICONIX	N-Channel 60 V 990mA (Tc) 725mW (Ta), 6.25W (Tc) Through Hole TO-205AD (TO-39)	Vishay Siliconix	-	N-Channel	60 V	5V, 10V	990mA (Tc)	50 pF @ 25 V	725mW (Ta), 6.25W (Tc)	3Ohm @ 1A, 10V	2V @ 1mA	±20V	MOSFET (Metal Oxide)	-	-55°C ~ 150°C (TJ)	Through Hole	TO-205AD (TO-39)
Partner Stock	2N6660-E3 VISHAY SILICONIX	N-Channel 60 V 990mA (Tc) 725mW (Ta), 6.25W (Tc) Through Hole TO-205AD (TO-39)	Vishay Siliconix	-	N-Channel	60 V	5V, 10V	990mA (Tc)	50 pF @ 25 V	725mW (Ta), 6.25W (Tc)	3Ohm @ 1A, 10V	2V @ 1mA	±20V	MOSFET (Metal Oxide)	-	-55°C ~ 150°C (TJ)	Through Hole	TO-205AD (TO-39)
Partner Stock	2N6660JTVP02 VISHAY SILICONIX	N-Channel 60 V 990mA (Tc) 725mW (Ta), 6.25W (Tc) Through Hole TO-205AD (TO-39)	Vishay Siliconix	-	N-Channel	60 V	5V, 10V	990mA (Tc)	50 pF @ 25 V	725mW (Ta), 6.25W (Tc)	3Ohm @ 1A, 10V	2V @ 1mA	±20V	MOSFET (Metal Oxide)	-	-55°C ~ 150°C (TJ)	Through Hole	TO-205AD (TO-39)
Partner Stock	2N6660JTXP02 VISHAY SILICONIX	N-Channel 60 V 990mA (Tc) 725mW (Ta), 6.25W (Tc) Through Hole TO-205AD (TO-39)	Vishay Siliconix	-	N-Channel	60 V	5V, 10V	990mA (Tc)	50 pF @ 25 V	725mW (Ta), 6.25W (Tc)	3Ohm @ 1A, 10V	2V @ 1mA	±20V	MOSFET (Metal Oxide)	-	-55°C ~ 150°C (TJ)	Through Hole	TO-205AD (TO-39)
Partner Stock	2N6661 VISHAY SILICONIX	N-Channel 90 V 860mA (Tc) 725mW (Ta), 6.25W (Tc) Through Hole TO-39	Vishay Siliconix	-	N-Channel	90 V	5V, 10V	860mA (Tc)	50 pF @ 25 V	725mW (Ta), 6.25W (Tc)	4Ohm @ 1A, 10V	2V @ 1mA	±20V	MOSFET (Metal Oxide)	-	-55°C ~ 150°C (TJ)	Through Hole	TO-39
Partner Stock	2N6661-2 VISHAY SILICONIX	N-Channel 90 V 860mA (Tc) 725mW (Ta), 6.25W (Tc) Through Hole TO-39	Vishay Siliconix	-	N-Channel	90 V	5V, 10V	860mA (Tc)	50 pF @ 25 V	725mW (Ta), 6.25W (Tc)	4Ohm @ 1A, 10V	2V @ 1mA	±20V	MOSFET (Metal Oxide)	-	-55°C ~ 150°C (TJ)	Through Hole	TO-39
Partner Stock	2N6661-E3 VISHAY SILICONIX	N-Channel 90 V 860mA (Tc) 725mW (Ta), 6.25W (Tc) Through Hole TO-39	Vishay Siliconix	-	N-Channel	90 V	5V, 10V	860mA (Tc)	50 pF @ 25 V	725mW (Ta), 6.25W (Tc)	4Ohm @ 1A, 10V	2V @ 1mA	±20V	MOSFET (Metal Oxide)	-	-55°C ~ 150°C (TJ)	Through Hole	TO-39
Partner Stock	2N6661JTVP02 VISHAY SILICONIX	N-Channel 90 V 860mA (Tc) 725mW (Ta), 6.25W (Tc) Through Hole TO-39	Vishay Siliconix	-	N-Channel	90 V	5V, 10V	860mA (Tc)	50 pF @ 25 V	725mW (Ta), 6.25W (Tc)	4Ohm @ 1A, 10V	2V @ 1mA	±20V	MOSFET (Metal Oxide)	-	-55°C ~ 150°C (TJ)	Through Hole	TO-39
Partner Stock	2N6661JTX02 VISHAY SILICONIX	N-Channel 90 V 860mA (Tc) 725mW (Ta), 6.25W (Tc) Through Hole TO-39	Vishay Siliconix	-	N-Channel	90 V	5V, 10V	860mA (Tc)	50 pF @ 25 V	725mW (Ta), 6.25W (Tc)	4Ohm @ 1A, 10V	2V @ 1mA	±20V	MOSFET (Metal Oxide)	-	-55°C ~ 150°C (TJ)	Through Hole	TO-39
Partner Stock	2N6661JTXP02 VISHAY SILICONIX	N-Channel 90 V 860mA (Tc) 725mW (Ta), 6.25W (Tc) Through Hole TO-39	Vishay Siliconix	-	N-Channel	90 V	5V, 10V	860mA (Tc)	50 pF @ 25 V	725mW (Ta), 6.25W (Tc)	4Ohm @ 1A, 10V	2V @ 1mA	±20V	MOSFET (Metal Oxide)	-	-55°C ~ 150°C (TJ)	Through Hole	TO-39
Partner Stock	2N7000 STMICROELECTRONICS	N-Channel 60 V 350mA (Tc) 1W (Tc) Through Hole TO-92-3	STMicroelectronics	STripFET™	N-Channel	60 V	4.5V, 10V	350mA (Tc)	43 pF @ 25 V	1W (Tc)	5Ohm @ 500mA, 10V	3V @ 250µA	±18V	MOSFET (Metal Oxide)	-	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3
Partner Stock	2N7000-D26Z ONSEMI	N-Channel 60 V 200mA (Ta) 400mW (Ta) Through Hole TO-92-3	onsemi	-	N-Channel	60 V	4.5V, 10V	200mA (Ta)	50 pF @ 25 V	400mW (Ta)	5Ohm @ 500mA, 10V	3V @ 1mA	±20V	MOSFET (Metal Oxide)	-	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3
Partner Stock	2N7000-D26Z ONSEMI	N-Channel 60 V 200mA (Ta) 400mW (Ta) Through Hole TO-92-3	onsemi	-	N-Channel	60 V	4.5V, 10V	200mA (Ta)	50 pF @ 25 V	400mW (Ta)	5Ohm @ 500mA, 10V	3V @ 1mA	±20V	MOSFET (Metal Oxide)	-	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3
Partner Stock	2N7000-D74Z ONSEMI	N-Channel 60 V 200mA (Ta) 400mW (Ta) Through Hole TO-92-3	onsemi	-	N-Channel	60 V	4.5V, 10V	200mA (Ta)	50 pF @ 25 V	400mW (Ta)	5Ohm @ 500mA, 10V	3V @ 1mA	±20V	MOSFET (Metal Oxide)	-	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3