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CoreStaff Part Number		 Manufacturer Series FET Type Technology Drain to Source Voltage (Vdss) Drive Voltage (Max Rds On, Min Rds On) Current - Continuous Drain (Id) @ 25°C Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Operating Temperature Range Applications Automotive Mounting Type Device Package FET Feature
Quality Guaranteed
B-2 		Supplier Stock

IRF540NSTRLPBF

IRF540NSTRLPBF
INFINEON

RoHS
8,000 22+   MOQ : 2,000
SPQ : 1

Approx. 11 days

CoreStaff Part Number：st76386650

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 10V 33A (Tc) 1960 pF @ 25 V 130W (Tc) 44mOhm @ 16A, 10V 4V @ 250µA 71 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount D2PAK
Quality Guaranteed
B-1 		Supplier Stock

IRF540PBF
VISHAY

4 11+  

Approx. 4 days

CoreStaff Part Number：st74845042

VISHAY N-Channel MOSFET (Metal Oxide) 100V 10V 28A (Tc) 1700 pF @ 25 V -55°C ~ 175°C (TJ) 77mOhms @ 17A, 10V 4V @ 250µA 72 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
Quality Guaranteed
B-1 		Supplier Stock

IRF540PBF
VISHAY

18 YG1K  

Approx. 7 days

CoreStaff Part Number：st68903742

VISHAY N-Channel MOSFET (Metal Oxide) 100V 10V 28A (Tc) 1700 pF @ 25 V -55°C ~ 175°C (TJ) 77mOhms @ 17A, 10V 4V @ 250µA 72 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
Quality Guaranteed
B-1 		Supplier Stock

IRF540ZPBF

IRF540ZPBF
INFINEON

13  

Approx. 11 days

CoreStaff Part Number：st75141194

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 10V 36A (Tc) 1770 pF @ 25 V 92W (Tc) 26.5mOhm @ 22A, 10V 4V @ 250µA 63 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
Quality Guaranteed
B-1 		Supplier Stock

IRF540ZPBF

IRF540ZPBF
INFINEON

38 1844+  

Approx. 4 days

CoreStaff Part Number：st74840127

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 100V 10V 36A (Tc) 1770 pF @ 25 V 92W (Tc) 26.5mOhm @ 22A, 10V 4V @ 250µA 63 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
Quality Guaranteed
B-2 		Supplier Stock

IRF5801TRPBF

IRF5801TRPBF
INFINEON

RoHS
6,000 21+   MOQ : 1,000
SPQ : 1

Approx. 11 days

CoreStaff Part Number：st76400938

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 200V 10V 600mA (Ta) 88 pF @ 25 V 2W (Ta) 2.2Ohms @ 360mA, 10V 5.5V @ 250µA 3.9 nC @ 10 V ±30V -55°C ~ 150°C (TJ) Surface Mount Micro6?(TSOP-6)
Quality Guaranteed
 Supplier Stock

IRF5801TRPBF

IRF5801TRPBF
INFINEON

14,640 23+  

Approx. 16 days

CoreStaff Part Number：st60358364

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 200V 10V 600mA (Ta) 88 pF @ 25 V 2W (Ta) 2.2Ohms @ 360mA, 10V 5.5V @ 250µA 3.9 nC @ 10 V ±30V -55°C ~ 150°C (TJ) Surface Mount Micro6?(TSOP-6)
Quality Guaranteed
B-2 		Supplier Stock

IRF5802TRPBF
INFINEON

RoHS
1,000 22/23+   MOQ : 1,000
SPQ : 1

Approx. 11 days

CoreStaff Part Number：st76369599

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 150V 10V 900mA (Ta) 88 pF @ 25 V 2W (Ta) 1.2Ohms @ 540mA, 10V 5.5V @ 250µA 6.8 nC @ 10 V ±30V -55°C ~ 150°C (TJ) Surface Mount Micro6?(TSOP-6)
Quality Guaranteed
B-1 		Supplier Stock

IRF5802TRPBF
INFINEON

169  

Approx. 11 days

CoreStaff Part Number：st75141195

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 150V 10V 900mA (Ta) 88 pF @ 25 V 2W (Ta) 1.2Ohms @ 540mA, 10V 5.5V @ 250µA 6.8 nC @ 10 V ±30V -55°C ~ 150°C (TJ) Surface Mount Micro6?(TSOP-6)
Quality Guaranteed
B-1 		Supplier Stock

Overseas Location

IRF5802TRPBF
INFINEON

10,500 22+  

Approx. 16 days

CoreStaff Part Number：st49404354

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 150V 10V 900mA (Ta) 88 pF @ 25 V 2W (Ta) 1.2Ohms @ 540mA, 10V 5.5V @ 250µA 6.8 nC @ 10 V ±30V -55°C ~ 150°C (TJ) Surface Mount Micro6?(TSOP-6)
Quality Guaranteed
B-2 		Supplier Stock

IRF5802TRPBF
INFINEON TECHNOLOGIES

9,000 N/A   MOQ : 3,000
SPQ : 3,000

Approx. 16 days

CoreStaff Part Number：st76681673

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 150V 10V 900mA (Ta) 88 pF @ 25 V 2W (Ta) 1.2Ohms @ 540mA, 10V 5.5V @ 250µA 6.8 nC @ 10 V ±30V -55°C ~ 150°C (TJ) Surface Mount Micro6?(TSOP-6)
Quality Guaranteed
B-1 		Supplier Stock

IRF5803TRPBF
INFINEON

3,000 21+  

Approx. 11 days

CoreStaff Part Number：st71361755

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 40V 4.5V, 10V 3.4A(TA) 1110 pF @ 25 V 2W (Ta) 112mOhms @ 3.4A, 10V 3V @ 250µA 37 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Surface Mount Micro6?(TSOP-6)
Quality Guaranteed
B-1 		Supplier Stock

IRF5803TRPBF
INFINEON

2,357  

Approx. 11 days

CoreStaff Part Number：st75141196

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 40V 4.5V, 10V 3.4A(TA) 1110 pF @ 25 V 2W (Ta) 112mOhms @ 3.4A, 10V 3V @ 250µA 37 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Surface Mount Micro6?(TSOP-6)
Quality Guaranteed
B-1 		Supplier Stock

Overseas Location

IRF5803TRPBF
INFINEON

34,109 22+  

Approx. 16 days

End of Life CoreStaff Part Number：st49404356

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 40V 4.5V, 10V 3.4A(TA) 1110 pF @ 25 V 2W (Ta) 112mOhms @ 3.4A, 10V 3V @ 250µA 37 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Surface Mount Micro6?(TSOP-6)
Quality Guaranteed
B-1 		Supplier Stock

IRF5803TRPBF
INFINEON

12,000 22+  

Approx. 4 days

CoreStaff Part Number：st74840089

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 40V 4.5V, 10V 3.4A(TA) 1110 pF @ 25 V 2W (Ta) 112mOhms @ 3.4A, 10V 3V @ 250µA 37 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Surface Mount Micro6?(TSOP-6)
Quality Guaranteed
B-2 		Supplier Stock

IRF5803TRPBF
INFINEON

RoHS
6,000 22+   MOQ : 3,000
SPQ : 1

Approx. 11 days

CoreStaff Part Number：st76386651

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 40V 4.5V, 10V 3.4A(TA) 1110 pF @ 25 V 2W (Ta) 112mOhms @ 3.4A, 10V 3V @ 250µA 37 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Surface Mount Micro6?(TSOP-6)
Quality Guaranteed
B-1 		Supplier Stock

IRF5806TRPBF
INFINEON

1,035  

Approx. 11 days

CoreStaff Part Number：st75141197

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) TUMT3 2.5V, 4.5V 4A (Ta) 594 pF @ 15 V 2W (Ta) 86mOhms @ 4A, 4.5V 1.2V @ 250µA 11.4 nC @ 4.5 V ±20V -55°C ~ 150°C (TJ) Surface Mount Micro6?(TSOP-6)
Quality Guaranteed
B-1 		Supplier Stock

IRF60DM206

IRF60DM206
INFINEON

32  

Approx. 11 days

CoreStaff Part Number：st75141198

Infineon Technologies StrongIRFET™ N-Channel MOSFET (Metal Oxide) 60V 6V, 10V 130A(Tc) 6530 pF @ 25 V 150°C (TJ) 2.9mOhms @ 80A, 10V 3.7V @ 150µA 200 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric ME
Quality Guaranteed
B-1 		Supplier Stock
200  

Approx. 11 days

CoreStaff Part Number：st75141199

Infineon Technologies StrongIRFET™ N-Channel MOSFET (Metal Oxide) 60V 6V, 10V 360A(Tc) 16000 pF @ 30 V 2.4W(Ta), 417W(Tc) 1.3mOhms @ 100A, 10V 3.7V @ 250µA 388 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount PG-TO263-7
Quality Guaranteed
B-1 		Supplier Stock

IRF610PBF
VISHAY

22  

Approx. 11 days

CoreStaff Part Number：st75141200

VISHAY N-Channel MOSFET (Metal Oxide) 200V 10V 3.3A(Tc) 140 pF @ 25 V 150°C (TJ) 1.5Ohms @ 2A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Through Hole TO-220AB
Quality Guaranteed
B-1 		Supplier Stock

IRF610PBF
VISHAY

74 1027  

Approx. 11 days

CoreStaff Part Number：st65417924

VISHAY N-Channel MOSFET (Metal Oxide) 200V 10V 3.3A(Tc) 140 pF @ 25 V 150°C (TJ) 1.5Ohms @ 2A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Through Hole TO-220AB
Quality Guaranteed
B-1 		Supplier Stock

IRF610PBF
VISHAY

30 24+  

Approx. 11 days

CoreStaff Part Number：st75024895

VISHAY N-Channel MOSFET (Metal Oxide) 200V 10V 3.3A(Tc) 140 pF @ 25 V 150°C (TJ) 1.5Ohms @ 2A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Through Hole TO-220AB
Quality Guaranteed
B-1 		Supplier Stock

IRF6215PBF

IRF6215PBF
INTERNATIONAL RECTIFIER

30  

Approx. 11 days

CoreStaff Part Number：st65359218

INTERNATIONAL RECTIFIER HEXFET® P-Channel MOSFET (Metal Oxide) 150V 10V 13A (Tc) 860 pF @ 25 V 110W (Tc) 290mOhms @ 6.6A, 10V 4V @ 250µA 66 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
Quality Guaranteed
B-1 		Supplier Stock

IRF6216TRPBF

IRF6216TRPBF
INFINEON

45  

Approx. 11 days

CoreStaff Part Number：st75141201

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 150V 10V 2.2A (Ta) 1280 pF @ 25 V 2.5W (Ta) 240mOhms @ 1.3A, 10V 5V @ 250µA 49 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Surface Mount 8-SO
Quality Guaranteed
B-1 		Supplier Stock

IRF6218PBF

IRF6218PBF
INFINEON

1,000 21+  

Approx. 8 days

CoreStaff Part Number：st70572728

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 150V 10V 27A (Tc) 2210 pF @ 25 V 250W(Tc) 150mOhms @ 16A, 10V 5V @ 250µA 110 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
Quality Guaranteed
B-1 		Supplier Stock

IRF630NPBF

IRF630NPBF
INFINEON

10,000 20+  

Approx. 11 days

CoreStaff Part Number：st71361756

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 200V 10V 9.3A (Tc) 575 pF @ 25 V 82W(Tc) 300mOhms @ 5.4A, 10V 4V @ 250µA 35 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
Quality Guaranteed
B-2 		Supplier Stock

IRF630NPBF

IRF630NPBF
INFINEON

RoHS
10,000 22/24+   MOQ : 3,000
SPQ : 1

Approx. 11 days

CoreStaff Part Number：st76369600

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 200V 10V 9.3A (Tc) 575 pF @ 25 V 82W(Tc) 300mOhms @ 5.4A, 10V 4V @ 250µA 35 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
Quality Guaranteed
B-1 		Supplier Stock

IRF630NPBF

IRF630NPBF
INFINEON

776  

Approx. 11 days

CoreStaff Part Number：st75141203

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 200V 10V 9.3A (Tc) 575 pF @ 25 V 82W(Tc) 300mOhms @ 5.4A, 10V 4V @ 250µA 35 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
Quality Guaranteed
B-1 		Supplier Stock

Overseas Location

IRF630NPBF

IRF630NPBF
INFINEON

29,111 25+  

Approx. 16 days

End of Life CoreStaff Part Number：st49404366

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 200V 10V 9.3A (Tc) 575 pF @ 25 V 82W(Tc) 300mOhms @ 5.4A, 10V 4V @ 250µA 35 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
Quality Guaranteed
B-1 		Supplier Stock

IRF630NPBF

IRF630NPBF
INFINEON

490 1846  

Approx. 7 days

CoreStaff Part Number：st68903767

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 200V 10V 9.3A (Tc) 575 pF @ 25 V 82W(Tc) 300mOhms @ 5.4A, 10V 4V @ 250µA 35 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
Quality Guaranteed
B-2 		Supplier Stock

IRF630NPBF
INFINEON TECHNOLOGIES

238,397 N/A   MOQ : 1,000
SPQ : 1,000

Approx. 16 days

CoreStaff Part Number：st76681674

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 200V 10V 9.3A (Tc) 575 pF @ 25 V 82W(Tc) 300mOhms @ 5.4A, 10V 4V @ 250µA 35 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
Quality Guaranteed
B-1 		Supplier Stock

IRF630NSTRLPBF

IRF630NSTRLPBF
INFINEON

16  

Approx. 11 days

CoreStaff Part Number：st75141204

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 200V 10V 9.3A (Tc) 575 pF @ 25 V 82W(Tc) 300mOhms @ 5.4A, 10V 4V @ 250µA 35 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount D2PAK
Quality Guaranteed
B-2 		Supplier Stock

IRF630NSTRLPBF
INFINEON TECHNOLOGIES

800 N/A   MOQ : 800
SPQ : 800

Approx. 16 days

CoreStaff Part Number：st76681675

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 200V 10V 9.3A (Tc) 575 pF @ 25 V 82W(Tc) 300mOhms @ 5.4A, 10V 4V @ 250µA 35 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount D2PAK
Quality Guaranteed
B-1 		Supplier Stock

IRF640
INTERNATIONAL RECTIFIER

2 1980-40  

Approx. 7 days

CoreStaff Part Number：st68903775

INTERNATIONAL RECTIFIER MESH OVERLAY™ N-Channel MOSFET (Metal Oxide) 200V 10V 18A (Tc) 1560 pF @ 25 V 125W (Tc) 180mOhms @ 9A, 10V 4V @ 250µA 72 nC @ 10 V ±20V 150°C (TJ) Through Hole TO-220
Quality Guaranteed
B-2 		Supplier Stock

IRF640NPBF

IRF640NPBF
INFINEON

RoHS
1,066 22/23+   MOQ : 1,066
SPQ : 1

Approx. 11 days

CoreStaff Part Number：st76389985

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 200V 10V 18A (Tc) 1160 pF @ 25 V -55°C ~ 175°C (TJ) 150mOhms @ 11A, 10V 4V @ 250µA 67 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
Quality Guaranteed
B-1 		Supplier Stock

IRF640NPBF

IRF640NPBF
INFINEON

16  

Approx. 11 days

CoreStaff Part Number：st75141206

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 200V 10V 18A (Tc) 1160 pF @ 25 V -55°C ~ 175°C (TJ) 150mOhms @ 11A, 10V 4V @ 250µA 67 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
Quality Guaranteed
B-1 		Supplier Stock

IRF640NPBF

IRF640NPBF
INFINEON

1,000 25+  

Approx. 11 days

CoreStaff Part Number：st76831384

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 200V 10V 18A (Tc) 1160 pF @ 25 V -55°C ~ 175°C (TJ) 150mOhms @ 11A, 10V 4V @ 250µA 67 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
Quality Guaranteed
B-1 		Supplier Stock

IRF640NPBF

IRF640NPBF
INFINEON

50,000 20+  

Approx. 11 days

CoreStaff Part Number：st71361757

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 200V 10V 18A (Tc) 1160 pF @ 25 V -55°C ~ 175°C (TJ) 150mOhms @ 11A, 10V 4V @ 250µA 67 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
Quality Guaranteed
B-1 		Supplier Stock

Overseas Location

IRF640NPBF

IRF640NPBF
INFINEON

83,600 22+  

Approx. 16 days

CoreStaff Part Number：st49404367

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 200V 10V 18A (Tc) 1160 pF @ 25 V -55°C ~ 175°C (TJ) 150mOhms @ 11A, 10V 4V @ 250µA 67 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
Quality Guaranteed
B-1 		Supplier Stock

IRF640NPBF
INFINEON TECHNOLOGIES

1,780 22+  

Approx. 11 days

CoreStaff Part Number：st75028691

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 200V 10V 18A (Tc) 1160 pF @ 25 V -55°C ~ 175°C (TJ) 150mOhms @ 11A, 10V 4V @ 250µA 67 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
Quality Guaranteed
B-2 		Supplier Stock

IRF640NPBF
INFINEON TECHNOLOGIES

293,600 N/A   MOQ : 1,000
SPQ : 1,000

Approx. 16 days

CoreStaff Part Number：st76681676

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 200V 10V 18A (Tc) 1160 pF @ 25 V -55°C ~ 175°C (TJ) 150mOhms @ 11A, 10V 4V @ 250µA 67 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole TO-220AB
Quality Guaranteed
B-1 		Supplier Stock

IRF640NSTRLPBF

IRF640NSTRLPBF
INFINEON

688  

Approx. 11 days

CoreStaff Part Number：st75141207

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 200V 10V 18A (Tc) 1160 pF @ 25 V -55°C ~ 175°C (TJ) 150mOhms @ 11A, 10V 4V @ 250µA 67 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount D2PAK
Quality Guaranteed
B-1 		Supplier Stock

IRF640NSTRLPBF

IRF640NSTRLPBF
INFINEON

2,400 21+  

Approx. 11 days

CoreStaff Part Number：st71361758

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 200V 10V 18A (Tc) 1160 pF @ 25 V -55°C ~ 175°C (TJ) 150mOhms @ 11A, 10V 4V @ 250µA 67 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount D2PAK
Quality Guaranteed
B-1 		Supplier Stock

Overseas Location

IRF640NSTRLPBF

IRF640NSTRLPBF
INFINEON

16,000 25+  

Approx. 16 days

CoreStaff Part Number：st49404369

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 200V 10V 18A (Tc) 1160 pF @ 25 V -55°C ~ 175°C (TJ) 150mOhms @ 11A, 10V 4V @ 250µA 67 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount D2PAK
Quality Guaranteed
B-2 		Supplier Stock

IRF640NSTRLPBF
INFINEON TECHNOLOGIES

121,600 N/A   MOQ : 800
SPQ : 800

Approx. 16 days

CoreStaff Part Number：st76681677

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 200V 10V 18A (Tc) 1160 pF @ 25 V -55°C ~ 175°C (TJ) 150mOhms @ 11A, 10V 4V @ 250µA 67 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount D2PAK
Quality Guaranteed
B-1 		Supplier Stock

IRF6609TR1
INFINEON

20 1327  

Approx. 7 days

CoreStaff Part Number：st68903782

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) TUMT3 4.5V, 10V 31A(TA), 150A(Tc) 6290 pF @ 10 V 1.8W(Ta), 89W(Tc) 2mOhms @ 31A, 10V 2.45V @ 250µA 69 nC @ 4.5 V ±20V -40°C ~ 150°C (TJ) Surface Mount DIRECTFET? MT
Quality Guaranteed
B-1 		Supplier Stock

IRF6613TRPBF
INFINEON

25  

Approx. 11 days

CoreStaff Part Number：st75141210

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 40V 4.5V, 10V 23A(TA), 150A(Tc) 5950 pF @ 15 V 2.8W(Ta), 89W(Tc) 3.4mOhms @ 23A, 10V 2.25V @ 250µA 63 nC @ 4.5 V ±20V -40°C ~ 150°C (TJ) Surface Mount DIRECTFET™ MT
Quality Guaranteed
B-2 		Supplier Stock

IRF6614TRPBF
INFINEON

RoHS
13,111 22/23+   MOQ : 100
SPQ : 1

Approx. 11 days

CoreStaff Part Number：st76528929

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 40V 4.5V, 10V 12.7A(TA), 55A(Tc) 2560 pF @ 20 V 2.1W(Ta), 42W(Tc) 8.3mOhms @ 12.7A, 10V 2.25V @ 250µA 29 nC @ 4.5 V ±20V -40°C ~ 150°C (TJ) Surface Mount DIRECTFET? ST
Quality Guaranteed
B-1 		Supplier Stock

IRF6616TRPBF
INFINEON

5  

Approx. 11 days

CoreStaff Part Number：st75141211

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 40V 4.5V, 10V 19A(TA), 106A(Tc) 3765 pF @ 20 V 2.8W(Ta), 89W(Tc) 5mOhms @ 19A, 10V 2.25V @ 250µA 44 nC @ 4.5 V ±20V -40°C ~ 150°C (TJ) Surface Mount DIRECTFET™ MX
Quality Guaranteed
B-1 		Supplier Stock

IRF6617TRPBF
INFINEON

287  

Approx. 11 days

CoreStaff Part Number：st75141212

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 30V 4.5V, 10V 14A(TA), 55A(Tc) 1300 pF @ 15 V 2.1W(Ta), 42W(Tc) 8.1mOhms @ 15A, 10V 2.35V @ 250µA 17 nC @ 4.5 V ±20V -40°C ~ 150°C (TJ) Surface Mount DIRECTFET? ST

Recommended Rectifiers - FETs