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供应商排名		 供应商 库存所在位置 照片 型号 / 制造商 / 其他 库存量 生产批次 单价 最低订货数量 /
后续订购数量		 预定出货日 ECAD模型 资讯
核友型号		 Manufacturer Series Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Input Capacitance (Ciss) (Max) @ Vds Power - Max Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate charge (Qg) when Vgs is applied (max) Technology Configuration FET Feature Operating Temperature Range Applications Automotive Mounting Type Device Package
質量保證
B-2 		来自供应商的订

IRF9389TRPBF

IRF9389TRPBF
INFINEON

RoHS
4,000 22/23+   MOQ : 2,000
SPQ : 1

预计 11个工作日

核友型号：st76370533

Infineon Technologies HEXFET® 30V 6.8A, 4.6A 398pF @ 15V 2W 27mOhms @ 6.8A, 10V 2.3V @ 10μA 14nC @ 10V MOSFET (Metal Oxide) N and P-Channel Logic Level Gate -55°C ~ 150°C (TJ) Surface Mount 8-SO
質量保證
B-1 		来自供应商的订

IRF9389TRPBF

IRF9389TRPBF
INFINEON

30  

预计 11个工作日

核友型号：st75141304

Infineon Technologies HEXFET® 30V 6.8A, 4.6A 398pF @ 15V 2W 27mOhms @ 6.8A, 10V 2.3V @ 10μA 14nC @ 10V MOSFET (Metal Oxide) N and P-Channel Logic Level Gate -55°C ~ 150°C (TJ) Surface Mount 8-SO
質量保證
B-1 		来自供应商的订
海外位置

IRF9389TRPBF

IRF9389TRPBF
INFINEON

53,075 23+  

预计 16个工作日

End of Life 核友型号：st49404464

Infineon Technologies HEXFET® 30V 6.8A, 4.6A 398pF @ 15V 2W 27mOhms @ 6.8A, 10V 2.3V @ 10μA 14nC @ 10V MOSFET (Metal Oxide) N and P-Channel Logic Level Gate -55°C ~ 150°C (TJ) Surface Mount 8-SO
質量保證
B-1 		来自供应商的订

IRF9392TRPBF
INFINEON

13  

预计 11个工作日

核友型号：st75141305

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 30V 10V, 20V 9.8A(TA) 1270 pF @ 25 V 2.5W (Ta) 12.1mOhms @ 7.8A, 20V 2.4V @ 25µA 14 nC @ 4.5 V ±25V -55°C ~ 150°C (TJ) Surface Mount
質量保證
B-1 		来自供应商的订

IRF9393TRPBF
INFINEON

15  

预计 11个工作日

核友型号：st75141306

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 30V 10V, 20V 9.2A (Ta) 1110 pF @ 25 V 2.5W (Ta) 13.3mOhms @ 9.2A, 20V 2.4V @ 25µA 38 nC @ 10 V ±25V -55°C ~ 150°C (TJ) Surface Mount
質量保證
B-1 		来自供应商的订

IRF9395MTRPBF
INFINEON

5  

预计 11个工作日

核友型号：st75141307

Infineon Technologies HEXFET® 30V 14A 3241pF @ 15V 2.1W 7mOhms @ 14A, 10V 2.4V @ 50µA 64nC @ 10V MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate -40°C ~ 150°C (TJ) Surface Mount DIRECTFET? MC
質量保證
B-2 		来自供应商的订

IRF9510PBF
VISHAY

2,000 N/A   MOQ : 600
SPQ : 300

预计 16个工作日

核友型号：st76681693

VISHAY P-Channel MOSFET (Metal Oxide) 100V 10V 4A (Tc) 200 pF @ 25 V 43W (Tc) 1.2Ohms @ 2.4A, 10V 4V @ 250µA 8.7 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole
質量保證
B-1 		来自供应商的订

IRF9520PBF
VISHAY

3,000 17+  

预计 11个工作日

核友型号：st75024671

VISHAY P-Channel MOSFET (Metal Oxide) 100V 10V 6.8A(Tc) 390 pF @ 25 V 150°C (TJ) 600mOhms @ 4.1A, 10V 4V @ 250µA 18 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole
質量保證
B-1 		来自供应商的订

IRF9520PBF
VISHAY

203 NA  

预计 7个工作日

核友型号：st68903891

VISHAY P-Channel MOSFET (Metal Oxide) 100V 10V 6.8A(Tc) 390 pF @ 25 V 150°C (TJ) 600mOhms @ 4.1A, 10V 4V @ 250µA 18 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole
質量保證
B-1 		来自供应商的订

IRF9530NPBF

IRF9530NPBF
INFINEON

700  

预计 11个工作日

核友型号：st75141308

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 100V 10V 14A (Tc) 760 pF @ 25 V 79W (Tc) 200mOhm @ 8.4A, 10V 4V @ 250µA 58 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole
質量保證
B-1 		来自供应商的订

IRF9530NPBF

IRF9530NPBF
INFINEON

1,000 21+  

预计 8个工作日

核友型号：st70572729

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 100V 10V 14A (Tc) 760 pF @ 25 V 79W (Tc) 200mOhm @ 8.4A, 10V 4V @ 250µA 58 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole
質量保證
B-2 		来自供应商的订

IRF9530NPBF

IRF9530NPBF
INFINEON

RoHS
4,000 22/23+   MOQ : 2,000
SPQ : 1

预计 11个工作日

核友型号：st76386653

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 100V 10V 14A (Tc) 760 pF @ 25 V 79W (Tc) 200mOhm @ 8.4A, 10V 4V @ 250µA 58 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole
質量保證
B-1 		来自供应商的订

IRF9530NPBF

IRF9530NPBF
INFINEON

150 2018  

预计 7个工作日

核友型号：st68903898

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 100V 10V 14A (Tc) 760 pF @ 25 V 79W (Tc) 200mOhm @ 8.4A, 10V 4V @ 250µA 58 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole
質量保證
B-1 		来自供应商的订
海外位置

IRF9530NPBF

IRF9530NPBF
INFINEON

36,595 24+  

预计 16个工作日

核友型号：st49404467

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 100V 10V 14A (Tc) 760 pF @ 25 V 79W (Tc) 200mOhm @ 8.4A, 10V 4V @ 250µA 58 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole
質量保證
B-1 		来自供应商的订
海外位置
5,972 22+  

预计 16个工作日

核友型号：st49404468

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 100V 10V 14A (Tc) 760 pF @ 25 V 3.8W(Ta), 79W(Tc) 200mOhm @ 8.4A, 10V 4V @ 250µA 58 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount
質量保證
B-2 		来自供应商的订

IRF9530NSTRLPBF
INFINEON TECHNOLOGIES

1,600 N/A   MOQ : 800
SPQ : 800

预计 16个工作日

核友型号：st76681694

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 100V 10V 14A (Tc) 760 pF @ 25 V 3.8W(Ta), 79W(Tc) 200mOhm @ 8.4A, 10V 4V @ 250µA 58 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount
質量保證
B-1 		来自供应商的订

IRF9530PBF
VISHAY

5  

预计 11个工作日

核友型号：st75141309

VISHAY P-Channel MOSFET (Metal Oxide) 100V 10V 12A (Tc) 860 pF @ 25 V 88W(Tc) 300mOhms @ 7.2A, 10V 4V @ 250µA 38 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole
質量保證
B-2 		来自供应商的订

IRF9530PBF
VISHAY

RoHS
4,170 22+   MOQ : 1,000
SPQ : 1

预计 11个工作日

核友型号：st76373537

VISHAY P-Channel MOSFET (Metal Oxide) 100V 10V 12A (Tc) 860 pF @ 25 V 88W(Tc) 300mOhms @ 7.2A, 10V 4V @ 250µA 38 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole
質量保證
B-1 		来自供应商的订

IRF9530PBF
VISHAY

1,594 23+  

预计 16个工作日

核友型号：st76083664

VISHAY P-Channel MOSFET (Metal Oxide) 100V 10V 12A (Tc) 860 pF @ 25 V 88W(Tc) 300mOhms @ 7.2A, 10V 4V @ 250µA 38 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole
質量保證
B-1 		来自供应商的订

IRF9530PBF
VISHAY

350 NA  

预计 7个工作日

核友型号：st68903900

VISHAY P-Channel MOSFET (Metal Oxide) 100V 10V 12A (Tc) 860 pF @ 25 V 88W(Tc) 300mOhms @ 7.2A, 10V 4V @ 250µA 38 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole
質量保證
B-2 		来自供应商的订

IRF9540NLPBF

IRF9540NLPBF
INFINEON

RoHS
750 20+   MOQ : 250
SPQ : 1

预计 11个工作日

核友型号：st76512942

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 100V 10V 23A (Tc) 1450 pF @ 25 V 3.1W(Ta), 110W(Tc) 117mOhms @ 14A, 10V 4V @ 250µA 110 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Through Hole
質量保證
B-2 		来自供应商的订

IRF9540NPBF
INFINEON TECHNOLOGIES

10,000 N/A   MOQ : 900
SPQ : 450

预计 16个工作日

核友型号：st76681695

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 100V 10V 23A (Tc) 1300 pF @ 25 V 140W (Tc) 117mOhms @ 11A, 10V 4V @ 250µA 97 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Through Hole
質量保證
B-1 		来自供应商的订

IRF9540NPBF

IRF9540NPBF
INFINEON

33,619 26+  

预计 16个工作日

核友型号：st76078880

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 100V 10V 23A (Tc) 1300 pF @ 25 V 140W (Tc) 117mOhms @ 11A, 10V 4V @ 250µA 97 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Through Hole
質量保證
B-2 		来自供应商的订

IRF9540NPBF

IRF9540NPBF
INFINEON

RoHS
423 22/23+   MOQ : 423
SPQ : 1

预计 11个工作日

核友型号：st76349772

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 100V 10V 23A (Tc) 1300 pF @ 25 V 140W (Tc) 117mOhms @ 11A, 10V 4V @ 250µA 97 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Through Hole
質量保證
B-1 		来自供应商的订

IRF9540NPBF

IRF9540NPBF
INFINEON

2,665  

预计 11个工作日

核友型号：st75141310

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 100V 10V 23A (Tc) 1300 pF @ 25 V 140W (Tc) 117mOhms @ 11A, 10V 4V @ 250µA 97 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Through Hole
質量保證
B-1 		来自供应商的订

IRF9540NPBF

IRF9540NPBF
INFINEON

450 2608  

预计 7个工作日

核友型号：st68903902

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 100V 10V 23A (Tc) 1300 pF @ 25 V 140W (Tc) 117mOhms @ 11A, 10V 4V @ 250µA 97 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Through Hole
質量保證
B-2 		来自供应商的订

IRF9540NSTRLPBF
RoHS
5,000 22+   MOQ : 1,000
SPQ : 1

预计 11个工作日

核友型号：st76412936

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 100V 10V 23A (Tc) 1450 pF @ 25 V 3.1W(Ta), 110W(Tc) 117mOhms @ 14A, 10V 4V @ 250µA 110 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Surface Mount
質量保證
B-1 		来自供应商的订

IRF9540NSTRLPBF
299  

预计 11个工作日

核友型号：st75141311

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 100V 10V 23A (Tc) 1450 pF @ 25 V 3.1W(Ta), 110W(Tc) 117mOhms @ 14A, 10V 4V @ 250µA 110 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Surface Mount
質量保證
B-1 		来自供应商的订

IRF9540NSTRLPBF
100 22+  

预计 11个工作日

核友型号：st75027777

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 100V 10V 23A (Tc) 1450 pF @ 25 V 3.1W(Ta), 110W(Tc) 117mOhms @ 14A, 10V 4V @ 250µA 110 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Surface Mount
質量保證
B-1 		来自供应商的订

IRF9540NSTRLPBF
13 1727+  

预计 4个工作日

核友型号：st74840151

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 100V 10V 23A (Tc) 1450 pF @ 25 V 3.1W(Ta), 110W(Tc) 117mOhms @ 14A, 10V 4V @ 250µA 110 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Surface Mount
質量保證
B-2 		来自供应商的订

IRF9540NSTRLPBF
INFINEON TECHNOLOGIES

99,200 N/A   MOQ : 800
SPQ : 800

预计 16个工作日

核友型号：st76681696

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 100V 10V 23A (Tc) 1450 pF @ 25 V 3.1W(Ta), 110W(Tc) 117mOhms @ 14A, 10V 4V @ 250µA 110 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Surface Mount
質量保證
B-2 		来自供应商的订

IRF9540NSTRRPBF
INFINEON TECHNOLOGIES

800 N/A   MOQ : 800
SPQ : 800

预计 16个工作日

核友型号：st76681697

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 100V 10V 23A (Tc) 1450 pF @ 25 V 3.1W(Ta), 110W(Tc) 117mOhms @ 14A, 10V 4V @ 250µA 110 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Surface Mount
質量保證
B-1 		来自供应商的订

IRF9640PBF
VISHAY

3,000 20+  

预计 11个工作日

核友型号：st75026773

VISHAY P-Channel MOSFET (Metal Oxide) 200V 10V 11A (Tc) 1200 pF @ 25 V 125W (Tc) 500mOhms @ 6.6A, 10V 4V @ 250µA 44 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Through Hole
質量保證
B-1 		来自供应商的订

IRF9640PBF
VISHAY

50 20+  

预计 11个工作日

核友型号：st76831706

VISHAY P-Channel MOSFET (Metal Oxide) 200V 10V 11A (Tc) 1200 pF @ 25 V 125W (Tc) 500mOhms @ 6.6A, 10V 4V @ 250µA 44 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Through Hole
質量保證
B-2 		来自供应商的订

IRF9640PBF
VISHAY

RoHS
14,888 20+   MOQ : 1,000
SPQ : 1

预计 11个工作日

核友型号：st76385233

VISHAY P-Channel MOSFET (Metal Oxide) 200V 10V 11A (Tc) 1200 pF @ 25 V 125W (Tc) 500mOhms @ 6.6A, 10V 4V @ 250µA 44 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Through Hole
質量保證
B-1 		来自供应商的订

IRF9640PBF
VISHAY

13 NA  

预计 7个工作日

核友型号：st68903909

VISHAY P-Channel MOSFET (Metal Oxide) 200V 10V 11A (Tc) 1200 pF @ 25 V 125W (Tc) 500mOhms @ 6.6A, 10V 4V @ 250µA 44 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Through Hole
質量保證
B-2 		来自供应商的订

IRF9910TRPBF

IRF9910TRPBF
INFINEON

RoHS
190 15+   MOQ : 190
SPQ : 1

预计 11个工作日

核友型号：st76386631

Infineon Technologies HEXFET® 20V 10A, 12A 900pF @ 10V 2W 9.3mOhms @ 12A, 10V 2.55V @ 250μA 11nC @ 4.5V MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate -55°C ~ 150°C (TJ) Surface Mount 8-SO
質量保證
B-1 		来自供应商的订

IRF9952TRPBF

IRF9952TRPBF
INFINEON

10  

预计 11个工作日

核友型号：st75141313

Infineon Technologies HEXFET® 30V 3.5A, 2.3A 190pF @ 15V 2W 100mOhm @ 2.2A, 10V 1V @ 250μA 14nC @ 10V MOSFET (Metal Oxide) N and P-Channel Logic Level Gate -55°C ~ 150°C (TJ) Surface Mount 8-SO
質量保證
B-1 		来自供应商的订

IRF9Z24NPBF

IRF9Z24NPBF
INFINEON

788  

预计 11个工作日

核友型号：st75141314

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 55V 10V 12A (Tc) 350 pF @ 25 V 45W (Tc) 175mOhms @ 7.2A, 10V 4V @ 250µA 19 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole
質量保證
B-2 		来自供应商的订

IRF9Z24NPBF

IRF9Z24NPBF
INFINEON

RoHS
2,000 22/23+   MOQ : 2,000
SPQ : 1

预计 11个工作日

核友型号：st76371796

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 55V 10V 12A (Tc) 350 pF @ 25 V 45W (Tc) 175mOhms @ 7.2A, 10V 4V @ 250µA 19 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole
質量保證
B-2 		来自供应商的订

IRF9Z24NPBF
INFINEON TECHNOLOGIES

30,000 N/A   MOQ : 1,100
SPQ : 550

预计 16个工作日

核友型号：st76681699

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 55V 10V 12A (Tc) 350 pF @ 25 V 45W (Tc) 175mOhms @ 7.2A, 10V 4V @ 250µA 19 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole
質量保證
B-1 		来自供应商的订

IRF9Z34NPBF

IRF9Z34NPBF
INFINEON

3,211 22+  

预计 16个工作日

核友型号：st76078881

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 55V 10V 19A (Tc) 620 pF @ 25 V 68W (Tc) 100mOhm @ 10A, 10V 4V @ 250µA 35 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole
質量保證
B-1 		来自供应商的订

IRF9Z34NPBF

IRF9Z34NPBF
INFINEON

4  

预计 11个工作日

核友型号：st75141315

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 55V 10V 19A (Tc) 620 pF @ 25 V 68W (Tc) 100mOhm @ 10A, 10V 4V @ 250µA 35 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole
質量保證
B-1 		来自供应商的订

IRF9Z34NPBF

IRF9Z34NPBF
INFINEON

6,200 21+  

预计 11个工作日

核友型号：st71361774

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 55V 10V 19A (Tc) 620 pF @ 25 V 68W (Tc) 100mOhm @ 10A, 10V 4V @ 250µA 35 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole
質量保證
B-2 		来自供应商的订

IRF9Z34NPBF

IRF9Z34NPBF
INFINEON

RoHS
69,941 21+   MOQ : 3,000
SPQ : 1

预计 11个工作日

核友型号：st76364454

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 55V 10V 19A (Tc) 620 pF @ 25 V 68W (Tc) 100mOhm @ 10A, 10V 4V @ 250µA 35 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole
質量保證
B-1 		来自供应商的订

IRF9Z34NPBF

IRF9Z34NPBF
INFINEON

200 0734  

预计 7个工作日

核友型号：st68903917

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 55V 10V 19A (Tc) 620 pF @ 25 V 68W (Tc) 100mOhm @ 10A, 10V 4V @ 250µA 35 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole
質量保證
B-1 		来自供应商的订
49  

预计 11个工作日

核友型号：st75141316

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 55V 10V 19A (Tc) 620 pF @ 25 V 3.8W(Ta), 68W(Tc) 100mOhm @ 10A, 10V 4V @ 250µA 35 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount
質量保證
B-2 		来自供应商的订
RoHS
10,402 22/23+   MOQ : 500
SPQ : 1

预计 11个工作日

核友型号：st76488670

Infineon Technologies HEXFET® P-Channel MOSFET (Metal Oxide) 55V 10V 19A (Tc) 620 pF @ 25 V 3.8W(Ta), 68W(Tc) 100mOhm @ 10A, 10V 4V @ 250µA 35 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Surface Mount
質量保證
B-1 		来自供应商的订

IRFB23N15DPBF

IRFB23N15DPBF
INFINEON

26  

预计 11个工作日

核友型号：st75141318

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 150V 10V 23A (Tc) 1200 pF @ 25 V 3.8W(Ta), 136W(Tc) 90mOhms @ 14A, 10V 5.5V @ 250µA 56 nC @ 10 V ±30V -55°C ~ 175°C (TJ) Through Hole
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B-1 		来自供应商的订

IRFB260NPBF

IRFB260NPBF
INFINEON

20  

预计 11个工作日

核友型号：st75141319

Infineon Technologies HEXFET® N-Channel MOSFET (Metal Oxide) 200V 10V 56A (Tc) 4220 pF @ 25 V 380W(Tc) 40mOhms @ 34A, 10V 4V @ 250µA 220 nC @ 10 V ±20V -55°C ~ 175°C (TJ) Through Hole

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