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库存类别供应商排名	库存所在位置	型号 / 制造商 / 其他	库存量	生产批次	最低订货数量 / 后续订购数量	预定出货日	资讯核友型号	Manufacturer	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Operating Temperature Range	Automotive	Mounting Type	Device Package
質量保證 B-1	来自供应商的订海外位置	IRFB7430PBF INFINEON	30,000	22+		预计 16个工作日	核友型号：st49404517	Infineon Technologies	HEXFET®, StrongIRFET™	N-Channel	MOSFET (Metal Oxide)	40V	6V, 10V	195A(Tc)	14240 pF @ 25 V	375W(Tc)	1.3mOhms @ 100A, 10V	3.9V @ 250µA	460 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB
質量保證 B-2	来自供应商的订	IRFB7430PBF INFINEON TECHNOLOGIES	3,800	N/A	MOQ : 150 SPQ : 150	预计 16个工作日	核友型号：st76681717	Infineon Technologies	HEXFET®, StrongIRFET™	N-Channel	MOSFET (Metal Oxide)	40V	6V, 10V	195A(Tc)	14240 pF @ 25 V	375W(Tc)	1.3mOhms @ 100A, 10V	3.9V @ 250µA	460 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB
質量保證 B-2	来自供应商的订	IRFB7434PBF INFINEON	4,850	21+	MOQ : 1,000 SPQ : 1	预计 11个工作日	核友型号：st76433278	Infineon Technologies	HEXFET®, StrongIRFET™	N-Channel	MOSFET (Metal Oxide)	40V	6V, 10V	195A(Tc)	10820 pF @ 25 V	294W(Tc)	1.6mOhms @ 100A, 10V	3.9V @ 250µA	324 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB
質量保證 B-1	来自供应商的订	IRFB7434PBF INFINEON	5			预计 11个工作日	核友型号：st75141353	Infineon Technologies	HEXFET®, StrongIRFET™	N-Channel	MOSFET (Metal Oxide)	40V	6V, 10V	195A(Tc)	10820 pF @ 25 V	294W(Tc)	1.6mOhms @ 100A, 10V	3.9V @ 250µA	324 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB
質量保證 B-2	来自供应商的订	IRFB7434PBF INFINEON TECHNOLOGIES	300	N/A	MOQ : 300 SPQ : 150	预计 16个工作日	核友型号：st76681718	Infineon Technologies	HEXFET®, StrongIRFET™	N-Channel	MOSFET (Metal Oxide)	40V	6V, 10V	195A(Tc)	10820 pF @ 25 V	294W(Tc)	1.6mOhms @ 100A, 10V	3.9V @ 250µA	324 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB
質量保證 B-1	来自供应商的订	IRFB7437PBF INFINEON	50			预计 11个工作日	核友型号：st75141354	Infineon Technologies	HEXFET®, StrongIRFET™	N-Channel	MOSFET (Metal Oxide)	40V	6V, 10V	195A(Tc)	7330 pF @ 25 V	230W(Tc)	2mOhms @ 100A, 10V	3.9V @ 150µA	225 nC @ 10 V	±20V	-55°C ~ 155°C (TJ)		Through Hole	TO-220AB
質量保證 B-2	来自供应商的订	IRFB7437PBF INFINEON	2,000	22/23+	MOQ : 1,000 SPQ : 1	预计 11个工作日	核友型号：st76421483	Infineon Technologies	HEXFET®, StrongIRFET™	N-Channel	MOSFET (Metal Oxide)	40V	6V, 10V	195A(Tc)	7330 pF @ 25 V	230W(Tc)	2mOhms @ 100A, 10V	3.9V @ 150µA	225 nC @ 10 V	±20V	-55°C ~ 155°C (TJ)		Through Hole	TO-220AB
質量保證	来自供应商的订	IRFB7437PBF INFINEON	3,934	22+		预计 16个工作日	核友型号：st60358676	Infineon Technologies	HEXFET®, StrongIRFET™	N-Channel	MOSFET (Metal Oxide)	40V	6V, 10V	195A(Tc)	7330 pF @ 25 V	230W(Tc)	2mOhms @ 100A, 10V	3.9V @ 150µA	225 nC @ 10 V	±20V	-55°C ~ 155°C (TJ)		Through Hole	TO-220AB
質量保證 B-2	来自供应商的订	IRFB7437PBF INFINEON TECHNOLOGIES	62,200	N/A	MOQ : 1,000 SPQ : 1,000	预计 16个工作日	核友型号：st76681719	Infineon Technologies	HEXFET®, StrongIRFET™	N-Channel	MOSFET (Metal Oxide)	40V	6V, 10V	195A(Tc)	7330 pF @ 25 V	230W(Tc)	2mOhms @ 100A, 10V	3.9V @ 150µA	225 nC @ 10 V	±20V	-55°C ~ 155°C (TJ)		Through Hole	TO-220AB
質量保證 B-1	来自供应商的订	IRFB7440PBF INFINEON	100			预计 11个工作日	核友型号：st75141355	Infineon Technologies	HEXFET®, StrongIRFET™	N-Channel	MOSFET (Metal Oxide)	40V	6V, 10V	120A (Tc)	4730 pF @ 25 V	143W(Tc)	2.5mOhms @ 100A, 10V	3.9V @ 100µA	135 nC @ 10 V	±20V	-55°C ~ 155°C (TJ)		Through Hole	TO-220AB
質量保證 C-1	来自供应商的订	IRFB7440PBF INFINEON	9,000	2131+	MOQ : 9,000 SPQ : 1	预计 8个工作日	核友型号：st66243084	Infineon Technologies	HEXFET®, StrongIRFET™	N-Channel	MOSFET (Metal Oxide)	40V	6V, 10V	120A (Tc)	4730 pF @ 25 V	143W(Tc)	2.5mOhms @ 100A, 10V	3.9V @ 100µA	135 nC @ 10 V	±20V	-55°C ~ 155°C (TJ)		Through Hole	TO-220AB
質量保證 B-2	来自供应商的订	IRFB7440PBF INFINEON	1,150	20+	MOQ : 1,000 SPQ : 1	预计 11个工作日	核友型号：st76416252	Infineon Technologies	HEXFET®, StrongIRFET™	N-Channel	MOSFET (Metal Oxide)	40V	6V, 10V	120A (Tc)	4730 pF @ 25 V	143W(Tc)	2.5mOhms @ 100A, 10V	3.9V @ 100µA	135 nC @ 10 V	±20V	-55°C ~ 155°C (TJ)		Through Hole	TO-220AB
質量保證 B-1	来自供应商的订海外位置	IRFB7440PBF INFINEON	55,075	21+24+		预计 16个工作日	核友型号：st49404520	Infineon Technologies	HEXFET®, StrongIRFET™	N-Channel	MOSFET (Metal Oxide)	40V	6V, 10V	120A (Tc)	4730 pF @ 25 V	143W(Tc)	2.5mOhms @ 100A, 10V	3.9V @ 100µA	135 nC @ 10 V	±20V	-55°C ~ 155°C (TJ)		Through Hole	TO-220AB
質量保證 B-1	来自供应商的订	IRFB7446GPBF INFINEON	19			预计 11个工作日	核友型号：st75141356	Infineon Technologies	HEXFET®, StrongIRFET™	N-Channel	MOSFET (Metal Oxide)	40V	6V, 10V	120A (Tc)	3183 pF @ 25 V	99W(Tc)	3.3mOhms @ 70A, 10V	3.9V @ 100µA	93 nC @ 10 V	±20V			Through Hole	TO-220AB
質量保證 B-1	来自供应商的订	IRFB7446PBF INFINEON	7			预计 11个工作日	核友型号：st75141357	Infineon Technologies	HEXFET®, StrongIRFET™	N-Channel	MOSFET (Metal Oxide)	40V	6V, 10V	120A (Tc)	3183 pF @ 25 V	99W(Tc)	3.3mOhms @ 70A, 10V	3.9V @ 100µA	93 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB
質量保證 B-1	来自供应商的订	IRFB7446PBF INFINEON	8	na		预计 7个工作日	核友型号：st68903931	Infineon Technologies	HEXFET®, StrongIRFET™	N-Channel	MOSFET (Metal Oxide)	40V	6V, 10V	120A (Tc)	3183 pF @ 25 V	99W(Tc)	3.3mOhms @ 70A, 10V	3.9V @ 100µA	93 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB
質量保證 B-1	来自供应商的订	IRFB7530PBF INFINEON	271			预计 11个工作日	核友型号：st75141358	Infineon Technologies	HEXFET®, StrongIRFET™	N-Channel	MOSFET (Metal Oxide)	60V	6V, 10V	195A(Tc)	13703 pF @ 25 V	375W(Tc)	2mOhms @ 100A, 10V	3.7V @ 250µA	411 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB
質量保證 B-1	来自供应商的订	IRFB7534PBF INFINEON	10			预计 11个工作日	核友型号：st75141359	Infineon Technologies	HEXFET®, StrongIRFET™	N-Channel	MOSFET (Metal Oxide)	60V	6V, 10V	195A(Tc)	10034 pF @ 25 V	294W(Tc)	2.4mOhms @ 100A, 10V	3.7V @ 250µA	279 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB
質量保證 B-1	来自供应商的订海外位置	IRFB7534PBF INFINEON	19,000	2125+		预计 16个工作日	核友型号：st49404524	Infineon Technologies	HEXFET®, StrongIRFET™	N-Channel	MOSFET (Metal Oxide)	60V	6V, 10V	195A(Tc)	10034 pF @ 25 V	294W(Tc)	2.4mOhms @ 100A, 10V	3.7V @ 250µA	279 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB
質量保證 B-2	来自供应商的订	IRFB7534PBF INFINEON TECHNOLOGIES	10,000	N/A	MOQ : 500 SPQ : 250	预计 16个工作日	核友型号：st76681720	Infineon Technologies	HEXFET®, StrongIRFET™	N-Channel	MOSFET (Metal Oxide)	60V	6V, 10V	195A(Tc)	10034 pF @ 25 V	294W(Tc)	2.4mOhms @ 100A, 10V	3.7V @ 250µA	279 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB
質量保證 B-2	来自供应商的订	IRFB7537PBF INFINEON	777	21+	MOQ : 777 SPQ : 1	预计 11个工作日	核友型号：st76412897	Infineon Technologies	HEXFET®, StrongIRFET™	N-Channel	MOSFET (Metal Oxide)	60V	6V, 10V	173A(Tc)	7020 pF @ 25 V	230W(Tc)	3.3mOhms @ 100A, 10V	3.7V @ 150µA	210 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB
質量保證 B-1	来自供应商的订	IRFB7537PBF INFINEON	50			预计 11个工作日	核友型号：st75141360	Infineon Technologies	HEXFET®, StrongIRFET™	N-Channel	MOSFET (Metal Oxide)	60V	6V, 10V	173A(Tc)	7020 pF @ 25 V	230W(Tc)	3.3mOhms @ 100A, 10V	3.7V @ 150µA	210 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB
質量保證 B-1	来自供应商的订海外位置	IRFB7537PBF INFINEON	20,000	23+		预计 16个工作日	核友型号：st49404525	Infineon Technologies	HEXFET®, StrongIRFET™	N-Channel	MOSFET (Metal Oxide)	60V	6V, 10V	173A(Tc)	7020 pF @ 25 V	230W(Tc)	3.3mOhms @ 100A, 10V	3.7V @ 150µA	210 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB
質量保證 B-1	来自供应商的订	IRFB7540PBF INFINEON	7			预计 11个工作日	核友型号：st75141361	Infineon Technologies	HEXFET®, StrongIRFET™	N-Channel	MOSFET (Metal Oxide)	60V	6V, 10V	110A(Tc)	4555 pF @ 25 V	-55°C ~ 150°C (TJ)	5.1 mOhms @ 65A, 10V	3.7V @ 100µA	130 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220
質量保證 B-2	来自供应商的订	IRFB7540PBF INFINEON	6,806	22/23+	MOQ : 250 SPQ : 1	预计 11个工作日	核友型号：st76502064	Infineon Technologies	HEXFET®, StrongIRFET™	N-Channel	MOSFET (Metal Oxide)	60V	6V, 10V	110A(Tc)	4555 pF @ 25 V	-55°C ~ 150°C (TJ)	5.1 mOhms @ 65A, 10V	3.7V @ 100µA	130 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220
質量保證 B-1	来自供应商的订	IRFB7545PBF INFINEON	86			预计 11个工作日	核友型号：st75141362	Infineon Technologies	HEXFET®, StrongIRFET™	N-Channel	MOSFET (Metal Oxide)	60V	6V, 10V	95A (Tc)	4010 pF @ 25 V	125W (Tc)	5.9 mOhms @ 57A, 10V	3.7V @ 100µA	110 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220
質量保證 B-2	来自供应商的订	IRFB7545PBF INFINEON	5,037	22/24+	MOQ : 2,500 SPQ : 1	预计 11个工作日	核友型号：st76393664	Infineon Technologies	HEXFET®, StrongIRFET™	N-Channel	MOSFET (Metal Oxide)	60V	6V, 10V	95A (Tc)	4010 pF @ 25 V	125W (Tc)	5.9 mOhms @ 57A, 10V	3.7V @ 100µA	110 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220
質量保證 B-1	来自供应商的订	IRFB7734PBF INFINEON	50			预计 11个工作日	核友型号：st75141363	Infineon Technologies	HEXFET®, StrongIRFET™	N-Channel	MOSFET (Metal Oxide)	75V	6V, 10V	183A(Tc)	10150 pF @ 25 V	290W(Tc)	3.5mOhms @ 100A, 10V	3.7V @ 250µA	270 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB
質量保證 B-1	来自供应商的订海外位置	IRFB7734PBF INFINEON	30,000	22+		预计 16个工作日	End of Life 核友型号：st49404528	Infineon Technologies	HEXFET®, StrongIRFET™	N-Channel	MOSFET (Metal Oxide)	75V	6V, 10V	183A(Tc)	10150 pF @ 25 V	290W(Tc)	3.5mOhms @ 100A, 10V	3.7V @ 250µA	270 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB
質量保證 B-1	来自供应商的订	IRFB7740PBF INFINEON	25			预计 11个工作日	核友型号：st75141364	Infineon Technologies	StrongIRFET™	N-Channel	MOSFET (Metal Oxide)	75V	6V, 10V	87A(Tc)	4650 pF @ 25 V	143W(Tc)	7.3mOhms @ 52A, 10V	3.7V @ 100µA	122 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	TO-220AB
質量保證 B-1	来自供应商的订	IRFBG30PBF VISHAY	196	na		预计 7个工作日	核友型号：st68903944	VISHAY		N-Channel	MOSFET (Metal Oxide)	1000V	10V	3.1A (Tc)	980 pF @ 25 V	125W (Tc)	5Ohms @ 1.9A, 10V	4V @ 250µA	80 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Through Hole	TO-220AB
質量保證 B-2	来自供应商的订	IRFBG30PBF VISHAY	10,000	N/A	MOQ : 300 SPQ : 150	预计 16个工作日	核友型号：st76681722	VISHAY		N-Channel	MOSFET (Metal Oxide)	1000V	10V	3.1A (Tc)	980 pF @ 25 V	125W (Tc)	5Ohms @ 1.9A, 10V	4V @ 250µA	80 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Through Hole	TO-220AB
質量保證 B-1	来自供应商的订	IRFD110PBF VISHAY	3,313	23+		预计 16个工作日	核友型号：st76083668	VISHAY		N-Channel	MOSFET (Metal Oxide)	100V	10V	1A (Ta)	180 pF @ 25 V	1.3W (Ta)	540mOhms @ 600mA, 10V	4V @ 250µA	8.3 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	4-HVMDIP
質量保證 B-1	来自供应商的订	IRFD110PBF VISHAY	268	21+		预计 11个工作日	核友型号：st75024521	VISHAY		N-Channel	MOSFET (Metal Oxide)	100V	10V	1A (Ta)	180 pF @ 25 V	1.3W (Ta)	540mOhms @ 600mA, 10V	4V @ 250µA	8.3 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	4-HVMDIP
質量保證 B-2	来自供应商的订	IRFD110PBF VISHAY	395	22/23+	MOQ : 100 SPQ : 1	预计 11个工作日	核友型号：st76581992	VISHAY		N-Channel	MOSFET (Metal Oxide)	100V	10V	1A (Ta)	180 pF @ 25 V	1.3W (Ta)	540mOhms @ 600mA, 10V	4V @ 250µA	8.3 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	4-HVMDIP
質量保證 B-1	来自供应商的订	IRFD120 INTERNATIONAL RECTIFIER	706	95		预计 11个工作日	核友型号：st65385205	INTERNATIONAL RECTIFIER		N-Channel	MOSFET (Metal Oxide)	100V	10V	1.3A (Ta)	360 pF @ 25 V	1.3W (Ta)	270mOhms @ 780mA, 10V	4V @ 250µA	16 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		Through Hole	4-HVMDIP
質量保證 B-1	来自供应商的订	IRFH3702TRPBF INFINEON	13			预计 11个工作日	核友型号：st75141370	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	30V	4.5V, 10V	16A(TA), 42A(Tc)	1510 pF @ 15 V	2.8W (Ta)	7.1mOhms @ 16A, 10V	2.35V @ 25µA	14 nC @ 4.5 V	±20V	-55°C ~ 150°C (TJ)		Surface Mount	8-PQFN(3x3)
質量保證 B-1	来自供应商的订	IRFH3707TRPBF INFINEON	1,655			预计 11个工作日	核友型号：st75141371	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	30V	4.5V, 10V	12A(TA), 29A(Tc)	755 pF @ 15 V	2.8W (Ta)	12.4mOhms @ 12A, 10V	2.35V @ 25µA	8.1 nC @ 4.5 V	±20V	-55°C ~ 150°C (TJ)		Surface Mount	8-PQFN(3x3)
質量保證 B-1	来自供应商的订	IRFH4253DTRPBF INFINEON	497			预计 11个工作日	核友型号：st75141372	Infineon Technologies	HEXFET®	25V	64A, 145A	1314pF @ 13V	31W, 50W	3.2mOhm @ 30A, 10V	2.1V @ 35μA	15nC @ 4.5V	MOSFET (Metal Oxide)	2 N-Channel (Dual)	Logic Level Gate	-55°C ~ 150°C (TJ)		Surface Mount	PQFN (5x6)
質量保證 B-1	来自供应商的订	IRFH4253DTRPBF INFINEON	10,930	20+		预计 11个工作日	核友型号：st71361785	Infineon Technologies	HEXFET®	25V	64A, 145A	1314pF @ 13V	31W, 50W	3.2mOhm @ 30A, 10V	2.1V @ 35μA	15nC @ 4.5V	MOSFET (Metal Oxide)	2 N-Channel (Dual)	Logic Level Gate	-55°C ~ 150°C (TJ)		Surface Mount	PQFN (5x6)
質量保證 B-1	来自供应商的订	IRFH4255DTRPBF INFINEON	134			预计 11个工作日	核友型号：st75141373	Infineon Technologies	HEXFET®	25V	64A, 105A	1314pF @ 13V	31W, 38W	3.2mOhm @ 30A, 10V	2.1V @ 35μA	15nC @ 4.5V	MOSFET (Metal Oxide)	2 N-Channel (Dual)	Logic Level Gate	-55°C ~ 150°C (TJ)		Surface Mount	PQFN (5x6)
質量保證 B-1	来自供应商的订	IRFH5015TRPBF INFINEON	200			预计 11个工作日	核友型号：st75141374	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	150V	10V	10A(TA), 56A(Tc)	2300 pF @ 50 V	3.6W(Ta), 156W(Tc)	31mOhms @ 34A, 10V	5V @ 150µA	50 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Surface Mount	8-PQFN (5x6)
質量保證 B-1	来自供应商的订	IRFH5020TRPBF INFINEON	24			预计 11个工作日	核友型号：st75141375	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	200V	10V	5.1A(TA)	2290 pF @ 100 V	3.6W(Ta), 8.3W(Tc)	55mOhms @ 7.5A, 10V	5V @ 150µA	54 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Surface Mount	8-PQFN (5x6)
質量保證 B-1	来自供应商的订	IRFH5020TRPBF INFINEON	1,000	18+		预计 11个工作日	核友型号：st71361786	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	200V	10V	5.1A(TA)	2290 pF @ 100 V	3.6W(Ta), 8.3W(Tc)	55mOhms @ 7.5A, 10V	5V @ 150µA	54 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Surface Mount	8-PQFN (5x6)
質量保證 B-1	来自供应商的订	IRFH5053TRPBF INFINEON	88			预计 11个工作日	核友型号：st75141376	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10V	9.3A(TA), 46A(Tc)	1510 pF @ 50 V	3.1W(Ta), 8.3W(Tc)	18mOhms @ 9.3A, 10V	4.9V @ 100µA	36 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Surface Mount	Pqfn (5X6) Single Die
質量保證 B-1	来自供应商的订	IRFH5110TRPBF INFINEON	10			预计 11个工作日	核友型号：st75141377	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10V	11A(TA), 63A(Tc)	3152 pF @ 25 V	3.6W(Ta), 114W(Tc)	12.4mOhms @ 37A, 10V	4V @ 100µA	72 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Surface Mount	8-PQFN (5x6)
質量保證 B-2	来自供应商的订	IRFH5210TRPBF INFINEON TECHNOLOGIES	12,000	N/A	MOQ : 4,000 SPQ : 4,000	预计 16个工作日	核友型号：st76681723	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10V	10A(TA), 55A(Tc)	2570 pF @ 25 V	3.6W(Ta), 104W(Tc)	14.9mOhms @ 33A, 10V	4V @ 100µA	59 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Surface Mount	8-PQFN (5x6)
質量保證 B-1	来自供应商的订	IRFH5210TRPBF INFINEON	12,000	21+		预计 16个工作日	核友型号：st76078887	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10V	10A(TA), 55A(Tc)	2570 pF @ 25 V	3.6W(Ta), 104W(Tc)	14.9mOhms @ 33A, 10V	4V @ 100µA	59 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Surface Mount	8-PQFN (5x6)
質量保證 B-1	来自供应商的订	IRFH5210TRPBF INFINEON	1			预计 11个工作日	核友型号：st75141378	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10V	10A(TA), 55A(Tc)	2570 pF @ 25 V	3.6W(Ta), 104W(Tc)	14.9mOhms @ 33A, 10V	4V @ 100µA	59 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Surface Mount	8-PQFN (5x6)
質量保證 B-1	来自供应商的订	IRFH5210TRPBF INFINEON	4,000	22+		预计 11个工作日	核友型号：st71361787	Infineon Technologies	HEXFET®	N-Channel	MOSFET (Metal Oxide)	100V	10V	10A(TA), 55A(Tc)	2570 pF @ 25 V	3.6W(Ta), 104W(Tc)	14.9mOhms @ 33A, 10V	4V @ 100µA	59 nC @ 10 V	±20V	-55°C ~ 150°C (TJ)		Surface Mount	8-PQFN (5x6)