QRE1113GR
※画像は参考です。
詳細は製品仕様をご覧ください。
ドキュメント
リンク先
製品スペック
| Case/Package | SMD/SMT |
| Collector Emitter Breakdown Voltage | 30 V |
| Collector Emitter Voltage (VCEO) | 30 V |
| Contact Plating | Tin |
| Dark Current | 1 nA |
| Fall Time | 20 µs |
| Forward Current | 50 mA |
| Forward Voltage | 1.2 V |
| Height | 1.87 mm |
| Input Current | 50 mA |
| Lead Free | Lead Free |
| Lifecycle Status | Production (Last Updated: 4 years ago) |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 4 years ago) |
| Max Breakdown Voltage | 30 V |
| Max Collector Current | 900 µA |
| Max Operating Temperature | 85 °C |
| Max Power Dissipation | 75 mW |
| Min Operating Temperature | -40 °C |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Number of Pins | 4 |
| Operating Supply Voltage | 1.7 V |
| Output Type | Phototransistor |
| Output Voltage | 20 V |
| Packaging | Cut Tape |
| Power Dissipation | 75 mW |
| Radiation Hardening | No |
| REACH SVHC | No |
| Response Time | 20 µs |
| Reverse Breakdown Voltage | 5 V |
| Reverse Voltage (DC) | 5 V |
| Rise Time | 20 µs |
| Schedule B | 8541408000, 8541408000|8541408000, 8541408000|8541408000|8541408000, 8541408000|8541408000|8541408000|8541408000 |
| Sensing Distance | 5.0038 mm |
| Wavelength | 940 nm |
| Weight | 78 mg |
| Width | 2.9 mm |
・商品説明の情報は、製品の概要を確認する目的で便宜的に提供しています。
・該当する正式情報は、メーカー発行のデータシート等をご参照ください。
在庫数: 955
出荷予定日:2026/06/16 当社出荷予定
17:00 までのオーダーで2026/06/16 当社出荷予定
MOQ:209
SPQ:1
| 購入数量 | 単価(JPY) |
|---|---|
| 209 - 2,089 | ¥ 127.1 |
| 2,090 - 10,449 | ¥ 125.8 |
| 10,450 - 20,899 | ¥ 124.61 |
| 20,900 - 104,499 | ¥ 123.72 |
| 104,500 - 208,999 | ¥ 123.26 |
| 209,000 - 417,999 | ¥ 123.01 |
| 418,000 - | ¥ 122.87 |
