CNY17-2.
※画像は参考です。
詳細は製品仕様をご覧ください。
ドキュメント
リンク先
製品スペック
| Ambient Temperature Range High | 110 °C |
| Approvals | VDE |
| Case/Package | DIP |
| China RoHS | Compliant |
| Collector Emitter Breakdown Voltage | 32 V |
| Collector Emitter Saturation Voltage | 400 mV |
| Collector Emitter Voltage (VCEO) | 70 V |
| Contact Plating | Tin |
| Current | 1 A |
| Current Transfer Ratio | 22 % |
| Dark Current | 50 nA |
| Fall Time | 14 µs |
| Forward Current | 60 mA |
| Forward Voltage | 1.5 V |
| Height | 4.3 mm |
| Input Current | 60 mA |
| Introduction Date | 1997-12-17 |
| Isolation Voltage | 3750 Vrms |
| Lead Free | Lead Free |
| Lifecycle Status | Production (Last Updated: 1 year ago) |
| Max Collector Current | 100 mA |
| Max Input Current | 60 mA |
| Max Operating Temperature | 100 °C |
| Max Output Voltage | 70 V |
| Max Power Dissipation | 150 mW |
| Min Operating Temperature | -55 °C |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Number of Pins | 6 |
| Output Current per Channel | 100 mA |
| Output Type | Phototransistor |
| Output Voltage | 70 V |
| Power Dissipation | 250 mW |
| Radiation Hardening | No |
| REACH SVHC | Yes |
| Reverse Breakdown Voltage | 6 V |
| Reverse Voltage | 6 V |
| Schedule B | 8541408000, 8541408000|8541408000, 8541408000|8541408000|8541408000, 8541408000|8541408000|8541408000|8541408000 |
| Turn-Off Delay Time | 23 µs |
| Turn-On Delay Time | 4.2 µs |
| Voltage | 70 V |
| Voltage Rating (DC) | 32 V |
・商品説明の情報は、製品の概要を確認する目的で便宜的に提供しています。
・該当する正式情報は、メーカー発行のデータシート等をご参照ください。
在庫数: 2,000
出荷予定日:2026/05/26 当社出荷予定
17:00 までのオーダーで2026/05/26 当社出荷予定
MOQ:2,000
SPQ:2,000
| 購入数量 | 単価(JPY) |
|---|---|
| 2,000 - 19,999 | ¥ 54.35 |
| 20,000 - 99,999 | ¥ 54.05 |
| 100,000 - 199,999 | ¥ 53.99 |
| 200,000 - | ¥ 53.93 |
