ILD217T
※画像は参考です。
詳細は製品仕様をご覧ください。
ドキュメント
リンク先
製品スペック
| Ambient Temperature Range High | 100 °C |
| Approvals | UL |
| Case/Package | SOIC |
| Collector Emitter Breakdown Voltage | 70 V |
| Collector Emitter Saturation Voltage | 400 mV |
| Collector Emitter Voltage (VCEO) | 70 V |
| Contact Plating | Tin |
| Current Transfer Ratio | 120 % |
| Forward Current | 10 mA |
| Forward Voltage | 1.2 V |
| Height | 3.5 mm |
| Input Current | 10 mA |
| Isolation Voltage | 4 kV |
| Lead Free | Lead Free |
| Max Input Current | 30 mA |
| Max Operating Temperature | 100 °C |
| Max Output Voltage | 70 V |
| Max Power Dissipation | 300 mW |
| Min Operating Temperature | -55 °C |
| Mount | PCB , Surface Mount |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Number of Pins | 8 |
| Output Type | Phototransistor |
| Output Voltage | 70 V |
| Packaging | Tape & Reel |
| Power Dissipation | 300 mW |
| Radiation Hardening | No |
| REACH SVHC | Unknown |
| Reverse Breakdown Voltage | 6 V |
| Reverse Voltage | 6 V |
| Reverse Voltage (DC) | 6 V |
| Schedule B | 8541408000, 8541408000|8541408000|8541408000|8541408000|8541408000|8541408000|8541408000|8541408000|8541408000|8541408000|8541408000|8541408000|8541408000|8541408000|8541408000|8541408000|8541408000|8541408000|8541408000|8541408000|8541408000|8541408000|8541408000|85 |
| Voltage Rating (DC) | 1.2 V |
・商品説明の情報は、製品の概要を確認する目的で便宜的に提供しています。
・該当する正式情報は、メーカー発行のデータシート等をご参照ください。
在庫数: 1,850
出荷予定日:2026/05/18 当社出荷予定
MOQ:1
SPQ:1
入荷予定数: 0
| 購入数量 | 単価(JPY) |
|---|---|
| 1 - 19 | ¥ 130.81 |
| 20 - 49 | ¥ 129.8 |
| 50 - 99 | ¥ 100.03 |
| 100 - 299 | ¥ 90.1 |
| 300 - 499 | ¥ 83.48 |
| 500 - 999 | ¥ 82.16 |
| 1,000 - 3,999 | ¥ 81.17 |
| 4,000 - | ¥ 80.42 |
