IPD30N08S2L21ATMA1

INFINEON

RoHS Status:RoHS

Stock Type:Quality-guaranteed

Supplier Rank:B-2

CoreStaff Part Number:st76510829

Date Code:22/23+

IPD30N08S2L21ATMA1_製品イメージ01

Images are for reference only.
Please see Product Specifications
for details.


Documents

DataSheet


Product Specifications

CategoryDiscrete semiconductors
ManufacturerINFINEON
SeriesOptiMOS™
FET TypeN-Channel
Drain to Source Voltage (Vdss)MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)75V
Current - Continuous Drain (Id) @ 25°C4.5V, 10V
Input Capacitance (Ciss) (Max) @ Vds30A (Tc)
Power Dissipation (Max)1650 pF @ 25 V
Rds On (Max) @ Id, Vgs136W(Tc)
Vgs(th) (Max) @ Id20.5mOhms @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs2V @ 80µA
Vgs (Max)72 nC @ 10 V
Operating Temperature Range±20V
Applications-55°C ~ 175°C (TJ)
Device PackageSurface Mount
TechnologyPG-TO252-3-11

・This information is intended to provide a brief overview of the item.

・For a more comprehensive explanation of this product, please refer to the manufacturer's
    official data sheet.

In Stock: 36,898

MOQ:250

SPQ:1


Alternative Part Number(s)

IPD220N06L3 G

Infineon

AUIRFR2405

Infineon

FDD5680

onsemi