IPB020N10N5ATMA1

INFINEON

RoHS Status:RoHS

Stock Type:Quality-guaranteed

Supplier Rank:B-2

CoreStaff Part Number:st75848006

Date Code:22/23+

IPB020N10N5ATMA1_製品イメージ01

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Please see Product Specifications
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Documents

DataSheet


Product Specifications

CategoryDiscrete semiconductors
ManufacturerINFINEON
SeriesOptiMOS?
FET TypeN-Channel
Drain to Source Voltage (Vdss)100V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Current - Continuous Drain (Id) @ 25°C120A(Tc)
Input Capacitance (Ciss) (Max) @ Vds15600 pF @ 50 V
Power Dissipation (Max)375W(Tc)
Rds On (Max) @ Id, Vgs2mOhms @ 100A, 10V
Vgs(th) (Max) @ Id3.8V @ 270μA
Gate Charge (Qg) (Max) @ Vgs210 nC @ 10 V
Vgs (Max)±20V
Operating Temperature Range-55°C ~ 175°C(TJ)
Mounting TypeSurface Mount
Device PackagePG-TO263-3
TechnologyMosfet (Metal Oxide)

・This information is intended to provide a brief overview of the item.

・For a more comprehensive explanation of this product, please refer to the manufacturer's
    official data sheet.

In Stock: 6,668

MOQ:100

SPQ:1


Alternative Part Number(s)

IPB020N08N5ATMA1

Infineon

STH150N10F7-2

STMicroelectronics

AUIRFS4310

Infineon