RSJ650N10TL
ROHM
RoHS Status:RoHS
CoreStaff Part Number:st75181828
Date Code:2012+
Images are for reference only.
Please see Product Specifications
for details.
Documents
Product Specifications
| Category | Discrete semiconductors Discrete single |
| Manufacturer | ROHM |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | MOSFET (Metal Oxide) |
| Drive Voltage (Max Rds On, Min Rds On) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 4V, 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 65A (Ta) |
| Power Dissipation (Max) | 10780 pF @ 25 V |
| Rds On (Max) @ Id, Vgs | 150°C (TJ) |
| Vgs(th) (Max) @ Id | 9.1mOhm @ 32.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 2.5V @ 1mA |
| Vgs (Max) | 260 nC @ 10 V |
| Operating Temperature Range | ±20V |
| Applications | 150°C (TJ) |
| Device Package | Surface Mount |
| Technology | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
・This information is intended to provide a brief overview of the item.
・For a more comprehensive explanation of this product, please refer to the manufacturer's
official data sheet.
In Stock: 200
MOQ:10
SPQ:10
| Quantity | Unit Price | |
|---|---|---|
| 10 - 999 | $3.762 | |
| 1,000 - | $2.754 | |
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