US6K4TR
ROHM
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Please see Product Specifications
for details.
Documents
Product Specifications
| Category | Discrete semiconductors Arrays |
| Manufacturer | ROHM |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 1.5 A |
| Input Capacitance (Ciss) (Max) @ Vds | 110pF @ 10V |
| Power - Max | 1W |
| Rds On (Max) @ Id, Vgs | 180mOhms @ 1.5A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Gate charge (Qg) when Vgs is applied (max) | 2.5nC @ 4.5V |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 Nチャンネル(デュアル) |
| FET Feature | Logic Level Gate |
| Operating Temperature Range | 150°C(TJ) |
| Mounting Type | Surface Mount |
| Device Package | TUMT6 |
・This information is intended to provide a brief overview of the item.
・For a more comprehensive explanation of this product, please refer to the manufacturer's
official data sheet.
