QS6K1TR
ROHM
Images are for reference only.
Please see Product Specifications
for details.
Documents
Product Specifications
| Category | Discrete semiconductors Arrays |
| Manufacturer | ROHM |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 1 A |
| Input Capacitance (Ciss) (Max) @ Vds | 77pF @ 10V |
| Power - Max | 1.25W |
| Rds On (Max) @ Id, Vgs | 238mOhms @ 1A, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA |
| Gate charge (Qg) when Vgs is applied (max) | 2.4nC @ 4.5V |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 Nチャンネル(デュアル) |
| FET Feature | Logic Level Gate |
| Operating Temperature Range | 150°C(TJ) |
| Mounting Type | Surface Mount |
| Device Package | TSMT6(SC-95) |
・This information is intended to provide a brief overview of the item.
・For a more comprehensive explanation of this product, please refer to the manufacturer's
official data sheet.
