NTRV4101PT1G
ON SEMICONDUCTOR
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Please see Product Specifications
for details.
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Product Specifications
| Category | Discrete semiconductors Discrete single |
| Manufacturer | ON SEMICONDUCTOR |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 1.8A(TA) |
| Input Capacitance (Ciss) (Max) @ Vds | 675 pF @ 10 V |
| Power Dissipation (Max) | 420mW(Ta) |
| Rds On (Max) @ Id, Vgs | 85mOhms @ 1.6A, 4.5V |
| Vgs(th) (Max) @ Id | 1.2V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs | 8.5 nC @ 4.5 V |
| Vgs (Max) | ±8V |
| Operating Temperature Range | -55°C ~ 150°C(TJ) |
| Mounting Type | Surface Mount |
| Device Package | SOT-23-3(TO-236) |
| Technology | Mosfet (Metal Oxide) |
・This information is intended to provide a brief overview of the item.
・For a more comprehensive explanation of this product, please refer to the manufacturer's
official data sheet.
