IPP026N10NF2SAKMA1
INFINEON
Images are for reference only.
Please see Product Specifications
for details.
Product Specifications
| Category | Discrete semiconductors Discrete single |
| Manufacturer | INFINEON |
| Series | StrongIRFET™ 2 |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | MOSFET (Metal Oxide) |
| Drive Voltage (Max Rds On, Min Rds On) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 6V, 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 27A(TA), 184A(Tc) |
| Power Dissipation (Max) | 7300 pF @ 50 V |
| Rds On (Max) @ Id, Vgs | 3.8W(Ta), 250W(Tc) |
| Vgs(th) (Max) @ Id | 2.6mOhms @ 100A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 3.8V @ 169µA |
| Vgs (Max) | 154 nC @ 10 V |
| Operating Temperature Range | ±20V |
| Applications | -55°C ~ 175°C (TJ) |
| Device Package | Through Hole |
| Technology | PG-TO220-3 |
・This information is intended to provide a brief overview of the item.
・For a more comprehensive explanation of this product, please refer to the manufacturer's
official data sheet.
