IPB020N10N5ATMA1
INFINEON
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Please see Product Specifications
for details.
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Product Specifications
| Category | Discrete semiconductors Discrete single |
| Manufacturer | INFINEON |
| Series | OptiMOS? |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 120A(Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 15600 pF @ 50 V |
| Power Dissipation (Max) | 375W(Tc) |
| Rds On (Max) @ Id, Vgs | 2mOhms @ 100A, 10V |
| Vgs(th) (Max) @ Id | 3.8V @ 270μA |
| Gate Charge (Qg) (Max) @ Vgs | 210 nC @ 10 V |
| Vgs (Max) | ±20V |
| Operating Temperature Range | -55°C ~ 175°C(TJ) |
| Mounting Type | Surface Mount |
| Device Package | PG-TO263-3 |
| Technology | Mosfet (Metal Oxide) |
・This information is intended to provide a brief overview of the item.
・For a more comprehensive explanation of this product, please refer to the manufacturer's
official data sheet.
