IMW65R027M1HXKSA1
INFINEON
Images are for reference only.
Please see Product Specifications
for details.
Product Specifications
| Category | Discrete semiconductors Discrete single |
| Manufacturer | INFINEON |
| Series | CoolSIC? M1 |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 650V |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Current - Continuous Drain (Id) @ 25°C | 47A(Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 2131 pF @ 400 V |
| Power Dissipation (Max) | 189W(Tc) |
| Rds On (Max) @ Id, Vgs | 34mOhms @ 38.3A, 18V |
| Vgs(th) (Max) @ Id | 5.7V @ 11mA |
| Gate Charge (Qg) (Max) @ Vgs | 62 nC @ 18 V |
| Vgs (Max) | +23V, -5V |
| Operating Temperature Range | -55°C ~ 150°C(TJ) |
| Mounting Type | Through Hole |
| Device Package | PG-TO247-3-41 |
| Technology | Sicfet (Silicon Carbide) |
・This information is intended to provide a brief overview of the item.
・For a more comprehensive explanation of this product, please refer to the manufacturer's
official data sheet.
