CSD18531Q5A
Texas Instruments
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Please see Product Specifications
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Product Specifications
| Category | Discrete semiconductors Discrete single |
| Manufacturer | Texas Instruments |
| Series | NexFET™ |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | MOSFET (Metal Oxide) |
| Drive Voltage (Max Rds On, Min Rds On) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 4.5V, 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 19A(TA), 100A(Tc) |
| Power Dissipation (Max) | 3840 pF @ 30 V |
| Rds On (Max) @ Id, Vgs | 3.1W(Ta), 156W(Tc) |
| Vgs(th) (Max) @ Id | 4.6mOhms @ 22A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 2.3V @ 250µA |
| Vgs (Max) | 43 nC @ 10 V |
| Operating Temperature Range | ±20V |
| Applications | -55°C ~ 150°C (TJ) |
| Device Package | Surface Mount |
| Technology | 8-VSONP(5x6) |
・This information is intended to provide a brief overview of the item.
・For a more comprehensive explanation of this product, please refer to the manufacturer's
official data sheet.
