CSD86360Q5D
Texas Instruments
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Please see Product Specifications
for details.
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Product Specifications
| Category | Discrete semiconductors Arrays |
| Manufacturer | Texas Instruments |
| Series | NexFET? |
| Drain to Source Voltage (Vdss) | 25 V |
| Current - Continuous Drain (Id) @ 25°C | 50 A |
| Input Capacitance (Ciss) (Max) @ Vds | 2060pF @ 12.5 |
| Power - Max | 13W |
| Vgs(th) (Max) @ Id | 2.1V @ 250μA |
| Gate charge (Qg) when Vgs is applied (max) | 12.6nC @ 4.5V |
| Technology | MOSFET (Metal Oxide) |
| Configuration | Nチャンネル2個(ハーフブリッジ) |
| FET Feature | Logic Level Gate |
| Operating Temperature Range | -55°C ~ 150°C(TJ) |
| Mounting Type | Surface Mount |
| Device Package | 8-LSON(5x6) |
・This information is intended to provide a brief overview of the item.
・For a more comprehensive explanation of this product, please refer to the manufacturer's
official data sheet.
