US6J11TR
ROHM
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Please see Product Specifications
for details.
Documents
Product Specifications
| Category | Discrete semiconductors Arrays |
| Manufacturer | ROHM |
| Drain to Source Voltage (Vdss) | 12 V |
| Current - Continuous Drain (Id) @ 25°C | 1.3 A |
| Input Capacitance (Ciss) (Max) @ Vds | 290pF @ 6V |
| Power - Max | 320mW |
| Rds On (Max) @ Id, Vgs | 260mOhms @ 1.3A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Gate charge (Qg) when Vgs is applied (max) | 2.4nC @ 4.5V |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2Pチャンネル(デュアル) |
| FET Feature | Logic Level Gate |
| Operating Temperature Range | 150°C(TJ) |
| Mounting Type | Surface Mount |
| Device Package | TUMT6 |
・This information is intended to provide a brief overview of the item.
・For a more comprehensive explanation of this product, please refer to the manufacturer's
official data sheet.
In Stock: 2,400
MOQ:10
SPQ:10
| Quantity | Unit Price | |
|---|---|---|
| 10 - 99 | $0.486 | |
| 100 - 499 | $0.456 | |
| 500 - 999 | $0.417 | |
| 1,000 - 2,999 | $0.386 | |
| 3,000 - 5,999 | $0.324 | |
| 6,000 - 14,999 | $0.301 | |
| 15,000 - | $0.255 | |
| - | - | |
