SCT3030ALGC11

SCT3030ALGC11_製品イメージ01

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Please see Product Specifications
for details.


Documents

DataSheet


Product Specifications

CategoryDiscrete semiconductors
ManufacturerROHM
FET TypeN-Channel
Drain to Source Voltage (Vdss)650V
Drive Voltage (Max Rds On, Min Rds On)18V
Current - Continuous Drain (Id) @ 25°C70A(Tc)
Input Capacitance (Ciss) (Max) @ Vds1526 pF @ 500 V
Power Dissipation (Max)262W(Tc)
Rds On (Max) @ Id, Vgs39mOhms @ 27A, 18V
Vgs(th) (Max) @ Id5.6V @ 13.3mA
Gate Charge (Qg) (Max) @ Vgs104 nC @ 18 V
Vgs (Max)+22V, -4V
Operating Temperature Range175°C(TJ)
Mounting TypeThrough Hole
Device PackageTO-247N
TechnologySicfet (Silicon Carbide)

・This information is intended to provide a brief overview of the item.

・For a more comprehensive explanation of this product, please refer to the manufacturer's
    official data sheet.

In Stock: 266

MOQ:1

SPQ:1

Quantity

Unit Price Total
QuantityUnit Price
1 - 9 $31.205
10 - 49 $27.481
50 - 99 $24.688
100 - 449 $22.357
450 - 899 $18.633
900 - 2,249 $17.233
2,250 - 4,499 $14.903
4,500 - $13.972

Alternative Part Number(s)

STW65N65DM2AG

STMicroelectronics

STWA88N65M5

STMicroelectronics