RZM001P02T2L

RZM001P02T2L_製品イメージ01

Images are for reference only.
Please see Product Specifications
for details.


Documents

DataSheet


Product Specifications

CategoryDiscrete semiconductors
ManufacturerROHM
FET TypeP-Channel
Drain to Source Voltage (Vdss)20V
Drive Voltage (Max Rds On, Min Rds On)1.2V, 4.5V
Current - Continuous Drain (Id) @ 25°C100mA(TA)
Input Capacitance (Ciss) (Max) @ Vds15 pF @ 10 V
Power Dissipation (Max)150mW(Ta)
Rds On (Max) @ Id, Vgs3.8Ohms @ 100mA, 4.5V
Vgs(th) (Max) @ Id1V @ 100μA
Gate Charge (Qg) (Max) @ Vgs±10V
Vgs (Max)±10V
Operating Temperature Range150°C(TJ)
Mounting TypeSurface Mount
Device PackageVMT3
TechnologyMosfet (Metal Oxide)

・This information is intended to provide a brief overview of the item.

・For a more comprehensive explanation of this product, please refer to the manufacturer's
    official data sheet.

In Stock: 8,000

MOQ:10

SPQ:10

Quantity

Unit Price Total
QuantityUnit Price
10 - 499 $0.062
500 - 7,999 $0.054
8,000 - 15,999 $0.046
16,000 - 39,999 $0.039
40,000 - $0.031
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