RYC002N05T316
ROHM
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Please see Product Specifications
for details.
Documents
Product Specifications
| Category | Discrete semiconductors Discrete single |
| Manufacturer | ROHM |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 50V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 200mA(TA) |
| Input Capacitance (Ciss) (Max) @ Vds | 26 pF @ 10 V |
| Power Dissipation (Max) | 350mW(Tc) |
| Rds On (Max) @ Id, Vgs | 2.2Ohms @ 200mA, 4.5V |
| Vgs(th) (Max) @ Id | 800mV @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | ±8V |
| Vgs (Max) | ±8V |
| Operating Temperature Range | -55°C ~ 150°C(TJ) |
| Mounting Type | Surface Mount |
| Device Package | SST3 |
| Technology | Mosfet (Metal Oxide) |
・This information is intended to provide a brief overview of the item.
・For a more comprehensive explanation of this product, please refer to the manufacturer's
official data sheet.
In Stock: 3,000
MOQ:40
SPQ:40
| Quantity | Unit Price | |
|---|---|---|
| 40 - 49 | $0.175 | |
| 50 - 99 | $0.15 | |
| 100 - 499 | $0.131 | |
| 500 - 999 | $0.119 | |
| 1,000 - 2,999 | $0.106 | |
| 3,000 - 5,999 | $0.087 | |
| 6,000 - 14,999 | $0.081 | |
| 15,000 - | $0.069 | |
