RSC002P03T316

RSC002P03T316_製品イメージ01

Images are for reference only.
Please see Product Specifications
for details.


Documents

DataSheet


Product Specifications

CategoryDiscrete semiconductors
ManufacturerROHM
FET TypeP-Channel
Drain to Source Voltage (Vdss)30V
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Current - Continuous Drain (Id) @ 25°C250mA(TA)
Input Capacitance (Ciss) (Max) @ Vds30 pF @ 10 V
Power Dissipation (Max)200mW(Ta)
Rds On (Max) @ Id, Vgs1.4Ohms @ 250mA, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs±20V
Vgs (Max)±20V
Operating Temperature Range150°C(TJ)
Mounting TypeSurface Mount
Device PackageSST3
TechnologyMosfet (Metal Oxide)

・This information is intended to provide a brief overview of the item.

・For a more comprehensive explanation of this product, please refer to the manufacturer's
    official data sheet.

In Stock: 8,900

MOQ:10

SPQ:10

Quantity

Unit Price Total
QuantityUnit Price
10 - 499 $0.085
500 - 999 $0.077
1,000 - 2,999 $0.069
3,000 - 5,999 $0.062
6,000 - 14,999 $0.054
15,000 - $0.046
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Alternative Part Number(s)

NX138BKR

Nexperia

DMP32D4S-13

Diodes Inc.

ON5520,215

NXP Semiconductors

DMN63D8L-7

Diodes Inc.