RS6P100BHTB1

RS6P100BHTB1_製品イメージ01

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Please see Product Specifications
for details.


Documents

DataSheet


Product Specifications

CategoryDiscrete semiconductors
ManufacturerROHM
FET TypeN-Channel
Drain to Source Voltage (Vdss)MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)100V
Current - Continuous Drain (Id) @ 25°C6V, 10V
Input Capacitance (Ciss) (Max) @ Vds100A (Tc)
Power Dissipation (Max)2880 pF @ 50 V
Rds On (Max) @ Id, Vgs104W (Tc)
Vgs(th) (Max) @ Id5.9mOhm @ 90A, 10V
Gate Charge (Qg) (Max) @ Vgs4V @ 1mA
Vgs (Max)45 nC @ 10 V
Operating Temperature Range±20V
Applications150°C (TJ)
Device PackageSurface Mount
Technology8-HSOP

・This information is intended to provide a brief overview of the item.

・For a more comprehensive explanation of this product, please refer to the manufacturer's
    official data sheet.

In Stock: 2,280

MOQ:10

SPQ:10

Quantity

Unit Price Total
QuantityUnit Price
10 - 99 $1.608
100 - 499 $1.502
500 - 999 $1.396
1,000 - 2,499 $1.282
2,500 - 4,999 $1.07
5,000 - 12,499 $0.994
12,500 - $0.857
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