RS1L151ATTB1

RS1L151ATTB1_製品イメージ01

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Please see Product Specifications
for details.


Documents

DataSheet


Product Specifications

CategoryDiscrete semiconductors
ManufacturerROHM
FET TypeP-Channel
Drain to Source Voltage (Vdss)MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)60V
Current - Continuous Drain (Id) @ 25°C4.5V, 10V
Input Capacitance (Ciss) (Max) @ Vds56A (Tc)
Power Dissipation (Max)6900 pF @ 30 V
Rds On (Max) @ Id, Vgs3W (Ta)
Vgs(th) (Max) @ Id11.3mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs2.5V @ 1mA
Vgs (Max)130 nC @ 10 V
Operating Temperature Range±20V
Applications150°C (TJ)
Device PackageSurface Mount
Technology8-HSOP

・This information is intended to provide a brief overview of the item.

・For a more comprehensive explanation of this product, please refer to the manufacturer's
    official data sheet.

In Stock: 2,490

MOQ:10

SPQ:10

Quantity

Unit Price Total
QuantityUnit Price
10 - 99 $1.451
100 - 499 $1.352
500 - 999 $1.261
1,000 - 2,499 $1.162
2,500 - 4,999 $0.965
5,000 - 12,499 $0.896
12,500 - $0.775
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