RS1E280GNTB

RS1E280GNTB_製品イメージ01

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Please see Product Specifications
for details.


Documents

DataSheet


Product Specifications

CategoryDiscrete semiconductors
ManufacturerROHM
FET TypeN-Channel
Drain to Source Voltage (Vdss)30V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C28A(TA), 80A(Tc)
Input Capacitance (Ciss) (Max) @ Vds2300 pF @ 15 V
Power Dissipation (Max)3W(Ta), 31W(Tc)
Rds On (Max) @ Id, Vgs2.6mOhms @ 28A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs36 nC @ 10 V
Vgs (Max)±20V
Operating Temperature Range150°C(TJ)
Mounting TypeSurface Mount
Device Package8-HSOP
TechnologyMosfet (Metal Oxide)

・This information is intended to provide a brief overview of the item.

・For a more comprehensive explanation of this product, please refer to the manufacturer's
    official data sheet.

In Stock: 2,500

MOQ:10

SPQ:10

Quantity

Unit Price Total
QuantityUnit Price
10 - 49 $1.231
50 - 99 $1.068
100 - 499 $0.944
500 - 999 $0.844
1,000 - 2,499 $0.769
2,500 - 4,999 $0.637
5,000 - 12,499 $0.594
12,500 - $0.512

Alternative Part Number(s)

FDMC7660S

onsemi

FDMS7660AS

onsemi

IRF8788TRPBF

Infineon